Nitride semiconductor devices : fundamentals and applications / / Hadis Morkoç |
Autore | Morkoç Hadis |
Edizione | [1st ed.] |
Pubbl/distr/stampa | Weinheim, : Wiley-VCH, 2013 |
Descrizione fisica | 1 online resource (476 p.) |
Disciplina | 621.38152 |
Soggetto topico |
Semiconductors - Materials
Nitrides Gallium nitride Semiconductor lasers Light emitting diodes |
ISBN |
3-527-64900-X
3-527-64903-4 3-527-64902-6 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Nitride Semiconductor Devices: Fundamentals and Applications; Contents; Preface; 1 General Properties of Nitrides; 1.1 Crystal Structure of Nitrides; 1.2 Gallium Nitride; 1.3 Aluminum Nitride; 1.4 Indium Nitride; 1.5 AlGaN Alloy; 1.6 InGaN Alloy; 1.7 AlInN Alloy; 1.8 InAlGaN Quaternary Alloy; 1.9 Electronic Band Structure and Polarization Effects; 1.9.1 Introduction; 1.9.2 General Strain Considerations; 1.9.3 k-p Theory and the Quasicubic Model; 1.9.4 Temperature Dependence of Wurtzite GaN Bandgap; 1.9.5 Sphalerite (Zincblende) GaN; 1.9.6 AlN; 1.9.6.1 Wurtzite AlN; 1.9.6.2 Zincblende AlN
1.9.7 InN1.10 Polarization Effects; 1.10.1 Piezoelectric Polarization; 1.10.2 Spontaneous Polarization; 1.10.3 Nonlinearity of Polarization; 1.10.3.1 Nonlinearities in Piezoelectric Polarization; 1.10.4 Polarization in Heterostructures; 1.10.4.1 Ga-Polarity Single AlGaN-GaN Interface; 1.10.4.2 Polarization in Quantum Wells; 1.11 Nonpolar and Semipolar Orientations; Further Reading; 2 Doping: Determination of Impurity and Carrier Concentrations; 2.1 Introduction; 2.2 Doping; 2.3 Formation Energy of Defects; 2.3.1 Hydrogen and Impurity Trapping at Extended Defects; 2.4 Doping Candidates 2.5 Free Carriers2.6 Binding Energy; 2.7 Conductivity Type: Hot Probe and Hall Measurements; 2.8 Measurement of Mobility; 2.9 Semiconductor Statistics, Density of States, and Carrier Concentration; 2.10 Charge Balance Equation and Carrier Concentration; 2.10.1 n-Type Semiconductor; 2.10.2 p-Type Semiconductor; 2.11 Capacitance-Voltage Measurements; Appendix 2.A. Fermi Integral; Further Reading; 3 Metal Contacts; 3.1 Metal-Semiconductor Band Alignment; 3.2 Current Flow in Metal-Semiconductor Junctions; 3.3 Ohmic Contact Resistance; 3.3.1 Specific Contact Resistivity 3.4 Semiconductor Resistance3.4.1 Determination of the Contact Resistivity; Further Reading; 4 Carrier Transport; 4.1 Introduction; 4.2 Carrier Scattering; 4.2.1 Impurity Scattering; 4.2.2 Acoustic Phonon Scattering; 4.2.2.1 Deformation Potential Scattering; 4.2.2.2 Piezoelectric Scattering; 4.2.3 Optical Phonon Scattering; 4.2.3.1 Nonpolar Optical Phonon Scattering; 4.2.3.2 Polar Optical Phonon Scattering; 4.2.4 Alloy Scattering and Dislocation Scattering; 4.3 Calculated Mobility of GaN; 4.4 Scattering at High Fields; 4.4.1 Transport at High Fields: Energy and Momentum Relaxation Times 4.4.2 Energy-Dependent Relaxation Time and Large B4.4.3 Hall Factor; 4.5 Delineation of Multiple Conduction Layer Mobilities; 4.6 Carrier Transport in InN; 4.7 Carrier Transport in AlN; 4.8 Carrier Transport in Alloys; 4.9 Two-Dimensional Transport in n-Type GaN; 4.9.1 Scattering in 2D Systems; 4.9.1.1 Electron Mobility in AlGaN/GaN 2D System; 4.9.1.2 Numerical Two-Dimensional Electron Gas Mobility Calculations; 4.9.1.3 Magnetotransport and Mobility Spectrum; Further Reading; 5 The p-n Junction; 5.1 Introduction; 5.2 Band Alignment; 5.3 Electrostatic Characteristics of p-n Heterojunctions 5.4 Current-Voltage Characteristics of p-n Junctions |
Record Nr. | UNINA-9910818642003321 |
Morkoç Hadis
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Weinheim, : Wiley-VCH, 2013 | ||
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Lo trovi qui: Univ. Federico II | ||
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Nonlinear laser dynamics [[electronic resource] ] : from quantum dots to cryptography / / edited by Kathy Lüdge |
Pubbl/distr/stampa | Weinheim, : Wiley-VCH |
Descrizione fisica | 1 online resource (411 p.) |
Disciplina | 621.366 |
Altri autori (Persone) | LüdgeKathy |
Collana | Reviews in nonlinear dynamics and complexity |
Soggetto topico |
Lasers
Nonlinear optics Semiconductor lasers |
ISBN |
1-283-64400-2
3-527-63984-5 3-527-63982-9 3-527-63983-7 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Nonlinear Laser Dynamics; Contents; Preface; List of Contributors; Part I Nanostructured Devices; 1 Modeling Quantum-Dot-Based Devices; 1.1 Introduction; 1.2 Microscopic Coulomb Scattering Rates; 1.2.1 Carrier-Carrier Scattering; 1.2.2 Detailed Balance; 1.3 Laser Model with Ground and Excited States in the QDs; 1.3.1 Temperature Effects; 1.3.2 Impact of Energy Confinement; 1.3.3 Eliminating the Excited State Population Dynamics; 1.4 Quantum Dot Switching Dynamics and Modulation Response; 1.4.1 Inhomogeneous Broadening; 1.4.2 Temperature-Dependent Losses in the Reservoir
1.4.3 Comparison to Experimental Results1.5 Asymptotic Analysis; 1.5.1 Consequences of Optimizing Device Performance; 1.6 QD Laser with Doped Carrier Reservoir; 1.7 Model Reduction; 1.8 Comparison to Quantum Well Lasers; 1.9 Summary; Acknowledgment; References; 2 Exploiting Noise and Polarization Bistability in Vertical-Cavity Surface-Emitting Lasers for Fast Pulse Generation and Logic Operations; 2.1 Introduction; 2.2 Spin-Flip Model; 2.3 Polarization Switching; 2.4 Pulse Generation Via Asymmetric Triangular Current Modulation; 2.5 Influence of the Noise Strength 2.6 Logic Stochastic Resonance in Polarization-Bistable VCSELs2.7 Reliability of the VCSEL-Based Stochastic Logic Gate; 2.8 Conclusions; Acknowledgment; References; 3 Mode Competition Driving Laser Nonlinear Dynamics; 3.1 Introduction; 3.2 Mode Competition in Semiconductor Lasers; 3.3 Low-Frequency Fluctuations in Multimode Lasers; 3.4 External-Cavity Mode Beating and Bifurcation Bridges; 3.5 Multimode Dynamics in Lasers with Short External Cavity; 3.6 Polarization Mode Hopping in VCSEL with Time Delay; 3.6.1 Polarization Switching Induced by Optical Feedback 3.6.2 Polarization Mode Hopping with Time-Delay Dynamics3.6.3 Coherence Resonance in a Bistable System with Time Delay; 3.7 Polarization Injection Locking Properties of VCSELs; 3.7.1 Optical Injection Dynamics; 3.7.2 Polarization and Transverse Mode Switching and Locking: Experiment; 3.7.3 Bifurcation Picture of a Two-Mode Laser; 3.8 Dynamics of a Two-Mode Quantum Dot Laser with Optical Injection; 3.9 Conclusions; Acknowledgments; References; 4 Quantum Cascade Laser: An Emerging Technology; 4.1 The Essence of QCLs; 4.1.1 Semiconductor Heterostructures; 4.1.2 Electric Pumping; 4.1.3 Cascading 4.2 Different Designs4.2.1 Optical Transition and Lifetime of the Upper State; 4.2.2 Effective Extraction from the Lower Laser Level; 4.2.3 Injection; 4.3 Reducing the Number of Levels Involved; 4.4 Modeling; 4.5 Outlook; Acknowledgments; 4.6 Appendix: Derivation of Eq. (4.1); References; 5 Controlling Charge Domain Dynamics in Superlattices; 5.1 Model of Charge Domain Dynamics; 5.2 Results; 5.2.1 Drift Velocity Characteristics for q = 0°, 25°, and 40°; 5.2.2 Current-Voltage Characteristics for q = 0°, 25°, and 40°; 5.2.3 I(t) Curves for q = 0°, 25°, and 40° 5.2.4 Charge Dynamics for q = 0°, 25°, and 40° |
Record Nr. | UNINA-9910141285403321 |
Weinheim, : Wiley-VCH | ||
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Lo trovi qui: Univ. Federico II | ||
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Nonlinear laser dynamics [[electronic resource] ] : from quantum dots to cryptography / / edited by Kathy Lüdge |
Pubbl/distr/stampa | Weinheim, : Wiley-VCH |
Descrizione fisica | 1 online resource (411 p.) |
Disciplina | 621.366 |
Altri autori (Persone) | LüdgeKathy |
Collana | Reviews in nonlinear dynamics and complexity |
Soggetto topico |
Lasers
Nonlinear optics Semiconductor lasers |
ISBN |
1-283-64400-2
3-527-63984-5 3-527-63982-9 3-527-63983-7 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Nonlinear Laser Dynamics; Contents; Preface; List of Contributors; Part I Nanostructured Devices; 1 Modeling Quantum-Dot-Based Devices; 1.1 Introduction; 1.2 Microscopic Coulomb Scattering Rates; 1.2.1 Carrier-Carrier Scattering; 1.2.2 Detailed Balance; 1.3 Laser Model with Ground and Excited States in the QDs; 1.3.1 Temperature Effects; 1.3.2 Impact of Energy Confinement; 1.3.3 Eliminating the Excited State Population Dynamics; 1.4 Quantum Dot Switching Dynamics and Modulation Response; 1.4.1 Inhomogeneous Broadening; 1.4.2 Temperature-Dependent Losses in the Reservoir
1.4.3 Comparison to Experimental Results1.5 Asymptotic Analysis; 1.5.1 Consequences of Optimizing Device Performance; 1.6 QD Laser with Doped Carrier Reservoir; 1.7 Model Reduction; 1.8 Comparison to Quantum Well Lasers; 1.9 Summary; Acknowledgment; References; 2 Exploiting Noise and Polarization Bistability in Vertical-Cavity Surface-Emitting Lasers for Fast Pulse Generation and Logic Operations; 2.1 Introduction; 2.2 Spin-Flip Model; 2.3 Polarization Switching; 2.4 Pulse Generation Via Asymmetric Triangular Current Modulation; 2.5 Influence of the Noise Strength 2.6 Logic Stochastic Resonance in Polarization-Bistable VCSELs2.7 Reliability of the VCSEL-Based Stochastic Logic Gate; 2.8 Conclusions; Acknowledgment; References; 3 Mode Competition Driving Laser Nonlinear Dynamics; 3.1 Introduction; 3.2 Mode Competition in Semiconductor Lasers; 3.3 Low-Frequency Fluctuations in Multimode Lasers; 3.4 External-Cavity Mode Beating and Bifurcation Bridges; 3.5 Multimode Dynamics in Lasers with Short External Cavity; 3.6 Polarization Mode Hopping in VCSEL with Time Delay; 3.6.1 Polarization Switching Induced by Optical Feedback 3.6.2 Polarization Mode Hopping with Time-Delay Dynamics3.6.3 Coherence Resonance in a Bistable System with Time Delay; 3.7 Polarization Injection Locking Properties of VCSELs; 3.7.1 Optical Injection Dynamics; 3.7.2 Polarization and Transverse Mode Switching and Locking: Experiment; 3.7.3 Bifurcation Picture of a Two-Mode Laser; 3.8 Dynamics of a Two-Mode Quantum Dot Laser with Optical Injection; 3.9 Conclusions; Acknowledgments; References; 4 Quantum Cascade Laser: An Emerging Technology; 4.1 The Essence of QCLs; 4.1.1 Semiconductor Heterostructures; 4.1.2 Electric Pumping; 4.1.3 Cascading 4.2 Different Designs4.2.1 Optical Transition and Lifetime of the Upper State; 4.2.2 Effective Extraction from the Lower Laser Level; 4.2.3 Injection; 4.3 Reducing the Number of Levels Involved; 4.4 Modeling; 4.5 Outlook; Acknowledgments; 4.6 Appendix: Derivation of Eq. (4.1); References; 5 Controlling Charge Domain Dynamics in Superlattices; 5.1 Model of Charge Domain Dynamics; 5.2 Results; 5.2.1 Drift Velocity Characteristics for q = 0°, 25°, and 40°; 5.2.2 Current-Voltage Characteristics for q = 0°, 25°, and 40°; 5.2.3 I(t) Curves for q = 0°, 25°, and 40° 5.2.4 Charge Dynamics for q = 0°, 25°, and 40° |
Record Nr. | UNINA-9910830651703321 |
Weinheim, : Wiley-VCH | ||
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Lo trovi qui: Univ. Federico II | ||
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Optical frequency optimization of a high intensity laser power beaming system utilizing VMJ photovoltaic cells [[electronic resource] /] / Daniel E. Raible and Dragos Dinca, Taysir H. Nayfeh |
Autore | Raible Daniel Edward |
Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2012] |
Descrizione fisica | 1 online resource (9 pages) : illustrations (some color) |
Altri autori (Persone) |
DincăDragoș Valentin
NayfehTaysir H |
Collana | NASA/TM |
Soggetto topico |
Photovoltaic cells
Energy conversion efficiency Semiconductor lasers Laser power beaming Energy gaps (solid state) High power lasers |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910702007903321 |
Raible Daniel Edward
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Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2012] | ||
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Lo trovi qui: Univ. Federico II | ||
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Precision spectroscopy, diode lasers, and optical frequency measurement technology : selected publications of the Optical Frequency Measurement Group of the Time and Frequency Division / / Leo Hollberg |
Autore | Hollberg Leo (Leo William) |
Pubbl/distr/stampa | Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1998 |
Descrizione fisica | 1 online resource |
Altri autori (Persone) | HollbergLeo (Leo William) |
Collana | NIST technical note |
Soggetto topico |
Laser spectroscopy
Optical measurements Semiconductor lasers Tunable lasers |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Altri titoli varianti | Precision spectroscopy, diode lasers, and optical frequency measurement technology |
Record Nr. | UNINA-9910711203003321 |
Hollberg Leo (Leo William)
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Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1998 | ||
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Lo trovi qui: Univ. Federico II | ||
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Quantum cascade lasers (QCLs) : types and applications / / Joseph D. Bennett, editor |
Pubbl/distr/stampa | New York, [New York] : , : Novinka, , 2017 |
Descrizione fisica | 1 online resource (100 pages) : illustrations |
Disciplina | 621.36/61 |
Collana | Classical and Quantum Mechanics |
Soggetto topico |
Semiconductor lasers
Quantum wells Hetrostructures |
ISBN | 1-5361-0405-1 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | Quantum cascade lasers (QCLs): basics, advanced devices, and applications / Fow-Sen Choa -- THz QCLs design towards real applications / Tsung-Tse Lin -- Quantum cascade laser photoacoustic detection of nitrous oxide released from diesel combustion / G.A. Mothe, M.S. Sthel, M.P.P de Castro, I.A. Esquef, M.G. da Silva and H. Vargas. |
Record Nr. | UNINA-9910160271903321 |
New York, [New York] : , : Novinka, , 2017 | ||
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Lo trovi qui: Univ. Federico II | ||
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Semiconductor diode lasers for THz technology / / Martin R. Hofmann |
Autore | Hofmann Martin R. |
Pubbl/distr/stampa | Paderborn : , : Verlag Ferdinand Schöningh, , 2013 |
Descrizione fisica | 1 online resource |
Disciplina | 621.3 |
Collana | Nordrhein Westfälische Akademie der Wissenschafte - Ingenieur- und Wirtschaftswissenschaften |
Soggetto topico |
Semiconductor lasers
Diodes, Semiconductor |
Soggetto genere / forma | Electronic books. |
ISBN | 3-657-77729-6 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | Preliminary Material -- Introduction -- THz Technology -- Diode Laser Based THz Technology -- Summary, Conclusions, and Acknowledgements -- References -- Veröffentlichungen der Nordrhein-Westfälischen Akademie der Wissenschaften und der Künste. |
Record Nr. | UNINA-9910478922103321 |
Hofmann Martin R.
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Paderborn : , : Verlag Ferdinand Schöningh, , 2013 | ||
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Lo trovi qui: Univ. Federico II | ||
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Semiconductor diode lasers for THz technology / / Martin R. Hofmann |
Autore | Hofmann Martin R. |
Pubbl/distr/stampa | Paderborn : , : Ferdinand Schöningh, , [2013] |
Descrizione fisica | 1 online resource |
Disciplina | 621.366 |
Collana | Nordrhein Westfälische Akademie der Wissenschafte - Ingenieur- und Wirtschaftswissenschaften |
Soggetto topico |
Semiconductor lasers
Diodes, Semiconductor |
ISBN | 3-657-77729-6 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | Preliminary Material -- Introduction -- THz Technology -- Diode Laser Based THz Technology -- Summary, Conclusions, and Acknowledgements -- References -- Veröffentlichungen der Nordrhein-Westfälischen Akademie der Wissenschaften und der Künste. |
Record Nr. | UNINA-9910795299103321 |
Hofmann Martin R.
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Paderborn : , : Ferdinand Schöningh, , [2013] | ||
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Lo trovi qui: Univ. Federico II | ||
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Semiconductor diode lasers for THz technology / / Martin R. Hofmann |
Autore | Hofmann Martin R. |
Pubbl/distr/stampa | Paderborn : , : Ferdinand Schöningh, , [2013] |
Descrizione fisica | 1 online resource |
Disciplina | 621.366 |
Collana | Nordrhein Westfälische Akademie der Wissenschafte - Ingenieur- und Wirtschaftswissenschaften |
Soggetto topico |
Semiconductor lasers
Diodes, Semiconductor |
ISBN | 3-657-77729-6 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | Preliminary Material -- Introduction -- THz Technology -- Diode Laser Based THz Technology -- Summary, Conclusions, and Acknowledgements -- References -- Veröffentlichungen der Nordrhein-Westfälischen Akademie der Wissenschaften und der Künste. |
Record Nr. | UNINA-9910826530203321 |
Hofmann Martin R.
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Paderborn : , : Ferdinand Schöningh, , [2013] | ||
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Lo trovi qui: Univ. Federico II | ||
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Semiconductor disk lasers [[electronic resource] ] : physics and technology / / edited by Oleg G. Okhotnikov |
Pubbl/distr/stampa | Weinheim, : Wiley-VCH, 2010 |
Descrizione fisica | 1 online resource (332 p.) |
Disciplina | 621.3661 |
Altri autori (Persone) | OkhotnikovOleg G |
Soggetto topico | Semiconductor lasers |
Soggetto genere / forma | Electronic books. |
ISBN |
1-282-69003-5
9786612690037 3-527-63039-2 3-527-63040-6 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | VECSEL semiconductor lasers : a path to high-power, quality beam and UV to IR wavelength by design -- Thermal management, structure design, and integration considerations for VECSELs -- Red semiconductor disk lasers by intracavity frequency conversion -- Long-wavelength GaSb disk lasers -- Semiconductor disk lasers based on quantum dots -- Mode-locked semiconductor disk lasers -- External-cavity surface-emitting diode lasers. |
Record Nr. | UNINA-9910140705303321 |
Weinheim, : Wiley-VCH, 2010 | ||
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Lo trovi qui: Univ. Federico II | ||
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