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Investigation of monolithically integrated spectral stabilization in high-brightness broad area diode lasers / / Jonathan Decker
| Investigation of monolithically integrated spectral stabilization in high-brightness broad area diode lasers / / Jonathan Decker |
| Autore | Decker Jonathan |
| Edizione | [1. Auflage.] |
| Pubbl/distr/stampa | Göttingen : , : Cuvillier Verlag, , [2018] |
| Descrizione fisica | 1 online resource (175 pages) |
| Disciplina | 621.366 |
| Collana | Innovationen mit Mikrowellen und Licht |
| Soggetto topico |
Semiconductor lasers
Diodes, Semiconductor |
| ISBN | 3-7369-8798-6 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910821497903321 |
Decker Jonathan
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| Göttingen : , : Cuvillier Verlag, , [2018] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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ISLC 2014 : 2014 IEEE International Semiconductor Laser Conference : 7-10 September 2014, Palma de Mallorca, Spain / / IEEE
| ISLC 2014 : 2014 IEEE International Semiconductor Laser Conference : 7-10 September 2014, Palma de Mallorca, Spain / / IEEE |
| Pubbl/distr/stampa | Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2014 |
| Descrizione fisica | 1 online resource (33 pages) |
| Disciplina | 621.366 |
| Soggetto topico |
Semiconductor lasers
Lasers - Industrial applications |
| ISBN |
1-4799-5722-4
1-4799-7866-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910141912103321 |
| Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2014 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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ISLC 2014 : 2014 IEEE International Semiconductor Laser Conference : 7-10 September 2014, Palma de Mallorca, Spain / / IEEE
| ISLC 2014 : 2014 IEEE International Semiconductor Laser Conference : 7-10 September 2014, Palma de Mallorca, Spain / / IEEE |
| Pubbl/distr/stampa | Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2014 |
| Descrizione fisica | 1 online resource (33 pages) |
| Disciplina | 621.366 |
| Soggetto topico |
Semiconductor lasers
Lasers - Industrial applications |
| ISBN |
1-4799-5722-4
1-4799-7866-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996279997403316 |
| Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2014 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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ISLC 2018 : 26th International Semiconductor Laser Conference : Hilton Santa Fe Historic Plaza, Santa Fe, New Mexico, USA, 16-19 September / / Institute of Electrical and Electronics Engineers
| ISLC 2018 : 26th International Semiconductor Laser Conference : Hilton Santa Fe Historic Plaza, Santa Fe, New Mexico, USA, 16-19 September / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2018 |
| Descrizione fisica | 1 online resource (137 pages) |
| Disciplina | 621.366 |
| Soggetto topico | Semiconductor lasers |
| ISBN | 1-5386-6486-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996280102303316 |
| Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2018 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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ISLC 2018 : 26th International Semiconductor Laser Conference : Hilton Santa Fe Historic Plaza, Santa Fe, New Mexico, USA, 16-19 September / / Institute of Electrical and Electronics Engineers
| ISLC 2018 : 26th International Semiconductor Laser Conference : Hilton Santa Fe Historic Plaza, Santa Fe, New Mexico, USA, 16-19 September / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2018 |
| Descrizione fisica | 1 online resource (137 pages) |
| Disciplina | 621.366 |
| Soggetto topico | Semiconductor lasers |
| ISBN | 1-5386-6486-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910291754703321 |
| Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2018 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Lasers, junctions, transport / Edited by R.K. Willardson, Albert C. Beer
| Lasers, junctions, transport / Edited by R.K. Willardson, Albert C. Beer |
| Pubbl/distr/stampa | New York : Academic Press, c1979 |
| Descrizione fisica | xiv, 334 p. ; 24 cm |
| Disciplina | 621.3815/2 |
| Altri autori (Persone) |
Willardson, Robert K.
Beer, Albert C. |
| Collana | Semiconductors and semimetals ; 14 |
| Soggetto topico |
Semiconductor lasers
Semiconductors - Junctions Transport theory |
| ISBN | 0127521143 |
| Classificazione |
LC QC610.9
53.7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISALENTO-991001996539707536 |
| New York : Academic Press, c1979 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. del Salento | ||
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Long-Wavelength Infrared Semiconductor Lasers
| Long-Wavelength Infrared Semiconductor Lasers |
| Autore | Choi Hong K |
| Pubbl/distr/stampa | [Place of publication not identified], : Wiley Interscience Imprint, 2004 |
| Descrizione fisica | 1 online resource (406 pages) |
| Disciplina | 621.366 |
| Altri autori (Persone) | ChoiHong Kyun |
| Collana | Wiley Series in Lasers and Applications |
| Soggetto topico |
Semiconductor lasers
Far infrared lasers |
| ISBN |
1-280-55667-6
9786610556670 0-470-31334-X 0-471-64980-5 0-471-64981-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | 1. Coherent Semiconductor Sources in the Long-Wavelength Infrared Spectrum / Hong K. Choi -- 2. 2-[mu]m Wavelength Lasers Employing InP-based Strained-Layer Quantum Wells / Manabu Mitsuhara and Mamoru Oishi -- 3. Antimonide Mid-IR Lasers / L.J. Olafsen, I. Vurgaftman and J.R. Meyer -- 4. Lead-Chalcogenide-based Mid-Infrared Diode Lasers / Uwe Peter Schiessl, Joachim John and Patrick J. McCann -- 5. InP and GaAs-based Quantum Cascade Lasers / Jerome Faist and Carlo Sirtori -- 6. Widely Tunable Far-Infrared Hot-Hole Semiconductor Lasers / Erik Brundermann -- 7. Continous THz Generation with Optical Heterodyning / J.C. Pearson, K.A. McIntosh and S. Verghese. |
| Record Nr. | UNINA-9910830832703321 |
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Choi Hong K
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| [Place of publication not identified], : Wiley Interscience Imprint, 2004 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Microcavity semiconductor lasers : principles, design, and applications / / Yong-zhen Huang, Yue-de Yang
| Microcavity semiconductor lasers : principles, design, and applications / / Yong-zhen Huang, Yue-de Yang |
| Autore | Huang Yong-zhen |
| Pubbl/distr/stampa | Weinheim, Germany : , : Wiley-VCH, , [2021] |
| Descrizione fisica | 1 online resource (337 pages) |
| Disciplina | 621.366 |
| Soggetto topico | Semiconductor lasers |
| ISBN |
3-527-82020-5
3-527-82019-1 3-527-82018-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910555001603321 |
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Huang Yong-zhen
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| Weinheim, Germany : , : Wiley-VCH, , [2021] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Microcavity semiconductor lasers : principles, design, and applications / / Yong-zhen Huang, Yue-de Yang
| Microcavity semiconductor lasers : principles, design, and applications / / Yong-zhen Huang, Yue-de Yang |
| Autore | Huang Yong-zhen |
| Pubbl/distr/stampa | Weinheim, Germany : , : Wiley-VCH, , [2021] |
| Descrizione fisica | 1 online resource (337 pages) |
| Disciplina | 621.366 |
| Soggetto topico | Semiconductor lasers |
| ISBN |
3-527-82020-5
3-527-82019-1 3-527-82018-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910829930403321 |
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Huang Yong-zhen
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| Weinheim, Germany : , : Wiley-VCH, , [2021] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nitride semiconductor devices [[electronic resource] ] : fundamentals and applications / / Hadis Morkoç
| Nitride semiconductor devices [[electronic resource] ] : fundamentals and applications / / Hadis Morkoç |
| Autore | Morkoç Hadis |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, 2013 |
| Descrizione fisica | 1 online resource (476 p.) |
| Disciplina | 621.38152 |
| Soggetto topico |
Semiconductors - Materials
Nitrides Gallium nitride Semiconductor lasers Light emitting diodes |
| ISBN |
3-527-64900-X
3-527-64903-4 3-527-64902-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Nitride Semiconductor Devices: Fundamentals and Applications; Contents; Preface; 1 General Properties of Nitrides; 1.1 Crystal Structure of Nitrides; 1.2 Gallium Nitride; 1.3 Aluminum Nitride; 1.4 Indium Nitride; 1.5 AlGaN Alloy; 1.6 InGaN Alloy; 1.7 AlInN Alloy; 1.8 InAlGaN Quaternary Alloy; 1.9 Electronic Band Structure and Polarization Effects; 1.9.1 Introduction; 1.9.2 General Strain Considerations; 1.9.3 k-p Theory and the Quasicubic Model; 1.9.4 Temperature Dependence of Wurtzite GaN Bandgap; 1.9.5 Sphalerite (Zincblende) GaN; 1.9.6 AlN; 1.9.6.1 Wurtzite AlN; 1.9.6.2 Zincblende AlN
1.9.7 InN1.10 Polarization Effects; 1.10.1 Piezoelectric Polarization; 1.10.2 Spontaneous Polarization; 1.10.3 Nonlinearity of Polarization; 1.10.3.1 Nonlinearities in Piezoelectric Polarization; 1.10.4 Polarization in Heterostructures; 1.10.4.1 Ga-Polarity Single AlGaN-GaN Interface; 1.10.4.2 Polarization in Quantum Wells; 1.11 Nonpolar and Semipolar Orientations; Further Reading; 2 Doping: Determination of Impurity and Carrier Concentrations; 2.1 Introduction; 2.2 Doping; 2.3 Formation Energy of Defects; 2.3.1 Hydrogen and Impurity Trapping at Extended Defects; 2.4 Doping Candidates 2.5 Free Carriers2.6 Binding Energy; 2.7 Conductivity Type: Hot Probe and Hall Measurements; 2.8 Measurement of Mobility; 2.9 Semiconductor Statistics, Density of States, and Carrier Concentration; 2.10 Charge Balance Equation and Carrier Concentration; 2.10.1 n-Type Semiconductor; 2.10.2 p-Type Semiconductor; 2.11 Capacitance-Voltage Measurements; Appendix 2.A. Fermi Integral; Further Reading; 3 Metal Contacts; 3.1 Metal-Semiconductor Band Alignment; 3.2 Current Flow in Metal-Semiconductor Junctions; 3.3 Ohmic Contact Resistance; 3.3.1 Specific Contact Resistivity 3.4 Semiconductor Resistance3.4.1 Determination of the Contact Resistivity; Further Reading; 4 Carrier Transport; 4.1 Introduction; 4.2 Carrier Scattering; 4.2.1 Impurity Scattering; 4.2.2 Acoustic Phonon Scattering; 4.2.2.1 Deformation Potential Scattering; 4.2.2.2 Piezoelectric Scattering; 4.2.3 Optical Phonon Scattering; 4.2.3.1 Nonpolar Optical Phonon Scattering; 4.2.3.2 Polar Optical Phonon Scattering; 4.2.4 Alloy Scattering and Dislocation Scattering; 4.3 Calculated Mobility of GaN; 4.4 Scattering at High Fields; 4.4.1 Transport at High Fields: Energy and Momentum Relaxation Times 4.4.2 Energy-Dependent Relaxation Time and Large B4.4.3 Hall Factor; 4.5 Delineation of Multiple Conduction Layer Mobilities; 4.6 Carrier Transport in InN; 4.7 Carrier Transport in AlN; 4.8 Carrier Transport in Alloys; 4.9 Two-Dimensional Transport in n-Type GaN; 4.9.1 Scattering in 2D Systems; 4.9.1.1 Electron Mobility in AlGaN/GaN 2D System; 4.9.1.2 Numerical Two-Dimensional Electron Gas Mobility Calculations; 4.9.1.3 Magnetotransport and Mobility Spectrum; Further Reading; 5 The p-n Junction; 5.1 Introduction; 5.2 Band Alignment; 5.3 Electrostatic Characteristics of p-n Heterojunctions 5.4 Current-Voltage Characteristics of p-n Junctions |
| Record Nr. | UNINA-9910141603303321 |
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Morkoç Hadis
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| Weinheim, : Wiley-VCH, 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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