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Nanoenergy advances
| Nanoenergy advances |
| Pubbl/distr/stampa | Basel : , : MDPI, , 2021- |
| Descrizione fisica | online resource |
| Disciplina | 600 |
| Soggetto topico |
Nanoelectromechanical systems
Nanostructured materials Nanotechnology |
| ISSN | 2673-706X |
| Formato | Materiale a stampa  |
| Livello bibliografico | Periodico |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910627226203321 |
| Basel : , : MDPI, , 2021- | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanofluidics [[electronic resource] ] : nanoscience and nanotechnology / / edited by Joshua B. Edel and Andrew J. deMello
| Nanofluidics [[electronic resource] ] : nanoscience and nanotechnology / / edited by Joshua B. Edel and Andrew J. deMello |
| Pubbl/distr/stampa | Cambridge, UK, : RSC Publishing, c2009 |
| Descrizione fisica | 1 online resource (211 p.) |
| Disciplina | 629.8042 |
| Altri autori (Persone) |
EdelJoshua B (Joshua Benno)
De MelloAndrew |
| Collana | RSC nanoscience & nanotechnology |
| Soggetto topico |
Nanoelectromechanical systems
Fluidic devices |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-62198-158-4
1-84755-890-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Nanofluidics_publicity; full book resized |
| Record Nr. | UNINA-9910455247803321 |
| Cambridge, UK, : RSC Publishing, c2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nanofluidics [[electronic resource] ] : nanoscience and nanotechnology / / edited by Joshua B. Edel and Andrew J. deMello
| Nanofluidics [[electronic resource] ] : nanoscience and nanotechnology / / edited by Joshua B. Edel and Andrew J. deMello |
| Pubbl/distr/stampa | Cambridge, UK, : RSC Publishing, c2009 |
| Descrizione fisica | 1 online resource (211 p.) |
| Disciplina | 629.8042 |
| Altri autori (Persone) |
EdelJoshua B (Joshua Benno)
De MelloAndrew |
| Collana | RSC nanoscience & nanotechnology |
| Soggetto topico |
Nanoelectromechanical systems
Fluidic devices |
| ISBN |
1-62198-158-4
1-84755-890-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Nanofluidics_publicity; full book resized |
| Record Nr. | UNINA-9910778307703321 |
| Cambridge, UK, : RSC Publishing, c2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nanofluidics [[electronic resource] ] : nanoscience and nanotechnology / / edited by Joshua B. Edel and Andrew J. deMello
| Nanofluidics [[electronic resource] ] : nanoscience and nanotechnology / / edited by Joshua B. Edel and Andrew J. deMello |
| Pubbl/distr/stampa | Cambridge, UK, : RSC Publishing, c2009 |
| Descrizione fisica | 1 online resource (211 p.) |
| Disciplina | 629.8042 |
| Altri autori (Persone) |
EdelJoshua B (Joshua Benno)
De MelloAndrew |
| Collana | RSC nanoscience & nanotechnology |
| Soggetto topico |
Nanoelectromechanical systems
Fluidic devices |
| ISBN |
1-62198-158-4
1-84755-890-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Nanofluidics_publicity; full book resized |
| Record Nr. | UNINA-9910827434803321 |
| Cambridge, UK, : RSC Publishing, c2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nanometer variation-tolerant SRAM [[electronic resource] ] : circuits and statistical design for yield / / Mohamed H. Abu-Rahma, Mohab Anix
| Nanometer variation-tolerant SRAM [[electronic resource] ] : circuits and statistical design for yield / / Mohamed H. Abu-Rahma, Mohab Anix |
| Autore | Abu-Rahma Mohamed H |
| Pubbl/distr/stampa | New York, : Springer, 2013 |
| Descrizione fisica | 1 online resource (175 p.) |
| Disciplina | 0058.43 |
| Altri autori (Persone) | AnisMohab |
| Soggetto topico |
Metal oxide semiconductors, Complementary
Random access memory Nanoelectronics Nanoelectromechanical systems |
| ISBN |
1-283-64018-X
1-4614-1749-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction -- Variability in Nanometer Technologies and Impact on SRAM -- Variarion-Tolerant SRAM Write and Read Assist Techniques -- Reducing SRAM Power using Fine-Grained Wordline Pulse Width Control -- A Methodology for Statistical Estimation of Read Access Yield in SRAMs -- Characterization of SRAM Sense Amplifier Input Offset for Yield Prediction. |
| Record Nr. | UNINA-9910438046603321 |
Abu-Rahma Mohamed H
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| New York, : Springer, 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanoscale ferroelectrics and multiferroics Key processes and characterization issues, and nanoscale effects . Volume 1 / / edited by Miguel Algueró, J. Marty Gregg, Liliana Mitoseriu
| Nanoscale ferroelectrics and multiferroics Key processes and characterization issues, and nanoscale effects . Volume 1 / / edited by Miguel Algueró, J. Marty Gregg, Liliana Mitoseriu |
| Pubbl/distr/stampa | Chichester, England : , : Wiley, , 2016 |
| Descrizione fisica | 1 online resource (997 p.) |
| Disciplina | 621.381 |
| Soggetto topico |
Ferroelectric devices
Nanoelectromechanical systems |
| ISBN |
1-118-93567-5
1-118-93570-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Nanoscale Ferroelectrics and Multiferroics; Contents; List of Contributors; Preface; Introduction: Why Nanoscale Ferroelectrics and Multiferroics?; I.1 Ferroics and Multiferroics; I.2 Ferroelectric Materials and Related Technologies; I.2.1 Ferroelectric Bulk Technologies; I.2.2 Ferroelectric Thin-Film Technologies; I.3 Multiferroic Materials for Enabling Magnetoelectric Technologies; I.3.1 Single-Phase Multiferroics; I.3.2 Magnetoelectric Composites; I.4 Nanoscale Ferroelectrics and Multiferroics; I.4.1 1D Nanostructured Ferroelectrics and Multiferroics
I.4.2 2D Nanostructured Ferroelectrics and MultiferroicsI.4.3 3D Nanostructured Ferroelectrics and Multiferroics; I.4.4 Intrinsically Nanostructured Ferroelectrics and Multiferroics; I.5 Book Plan; References; Part A; Nanostructuring: Bulk; Nanostructuring: Thin Films; Nanostructuring: Fibers and Wires; References; 1 Incorporation Mechanism and Functional Properties of Ce-Doped BaTiO3 Ceramics Derived from Nanopowders Prepared by the Modified Pechini Method; 1.1 Why Cerium-Doped BaTiO3?; 1.2 Sample Preparation, Phase and Nano/Microstructural Characterization; 1.2.1 Powders; 1.2.2 Ceramics 1.3 Dielectric Properties1.4 Raman Investigation; 1.5 Conclusions; Acknowledgments; References; 2 Synthesis and Ceramic Nanostructuring of Ferroic and Multiferroic Low-Tolerance-Factor Perovskite Oxides; 2.1 Introduction; 2.2 Synthesis of Perovskites Oxides; 2.2.1 General Information on the Preparation of Low-tolerance-Factor Perovskite Oxides; 2.2.2 Mechanochemical Activation and Mechanosynthesis Applied to Low-Tolerance-Factor Perovskite Oxides; 2.3 Processing of Ferroic and Multiferroic Materials: From the Ceramic Method to the Current Assisted Methods 2.3.1 SPS Applied to the Preparation of Ferroic Ceramic Materials2.4 Combination of Mechanosynthesis and Spark Plasma Synthesis: The Right Track to the Nanoscale in Ferroic Materials; 2.5 Conclusions; Acknowledgments; References; 3 Core-Shell Heterostructures: From Particle Synthesis to Bulk Dielectric, Ferroelectric, and Multiferroic Composite Materials; 3.1 Introduction; 3.2 Liquid-Phase Synthesis of Core-Shell Particles; 3.2.1 Controlled Assembly of Preformed Nanoparticles; 3.2.2 Precipitation; 3.3 BaTiO3@polymer Particles and Composites 3.4 Inorganic Core-Shell Particles with a Ferroelectric Core3.5 Multiferroic Core-Shell Particles and Composites; 3.6 Conclusions and Outlook; References; 4 Modeling of Colloidal Suspensions for the Synthesis of the Ferroelectric Oxides with Complex Chemical Composition; 4.1 Introduction; 4.2 Solid-State Synthesis; 4.3 Colloidal Interactions and Aggregation; 4.3.1 DLVO Theory; 4.3.2 Modeling of Aggregate Formation and Their Structure; 4.4 Aggregation in the Three-Component System; 4.5 Applying the Modeling Results to Enhance Properties of Ferroelectric Complex Oxides 4.5.1 PMN Synthesis by Controlled Aggregation of Reagent Particles |
| Record Nr. | UNINA-9910136818103321 |
| Chichester, England : , : Wiley, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanoscale Matter and Principles for Sensing and Labeling Applications [[electronic resource] /] / edited by Dambarudhar Mohanta, Purushottam Chakraborty
| Nanoscale Matter and Principles for Sensing and Labeling Applications [[electronic resource] /] / edited by Dambarudhar Mohanta, Purushottam Chakraborty |
| Autore | Mohanta Dambarudhar |
| Edizione | [1st ed. 2024.] |
| Pubbl/distr/stampa | Singapore : , : Springer Nature Singapore : , : Imprint : Springer, , 2024 |
| Descrizione fisica | 1 online resource (583 pages) |
| Disciplina | 620.5 |
| Altri autori (Persone) | ChakrabortyPurushottam |
| Collana | Advanced Structured Materials |
| Soggetto topico |
Nanotechnology
Nanoelectromechanical systems Biophysics Nanoscience Nanoscale Design, Synthesis and Processing Nanoscale Devices Nanoscale Biophysics |
| ISBN | 981-9978-48-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | From Atoms to the Higgs boson -- About teaching quantum mechanics in high-schools -- History of physics for education: the scientific contributions of Enrico Fermi -- Three Tales about Gravity -- Gravity between Physics and Philosophy -- Einstein’s theory at the extremes: gravitational waves and black holes -- The Dark Universe -- Gravitational Waves: an historical perspective. |
| Record Nr. | UNINA-9910845093703321 |
|
Mohanta Dambarudhar
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| Singapore : , : Springer Nature Singapore : , : Imprint : Springer, , 2024 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine / / edited by Alexei N. Nazarov and Jean-Pierre Raskin
| Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine / / edited by Alexei N. Nazarov and Jean-Pierre Raskin |
| Pubbl/distr/stampa | Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2011] |
| Descrizione fisica | 1 online resource (199 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
NazarovA. N (Alexei N.)
RaskinJ.-P <1971-> (Jean-Pierre) |
| Collana | Advanced materials research |
| Soggetto topico |
Semiconductors
Silicon-on-insulator technology Nanoelectromechanical systems Nanotechnology |
| Soggetto genere / forma | Electronic books. |
| ISBN | 3-03813-615-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices; Preface and Committee Members; Table of Contents; I. Technology of Semiconductor-On-Insulator Structures and Devices; ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications; Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures; Diamond - Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing; Hydrogen Gettering within Processed Oxygen-Implanted Silicon; II. Physics of New SOI Devices
Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical ModelSemi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels; Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs; High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs; Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures; Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs; Effects of High-Energy Neutrons on Advanced SOI MOSFETs; III. SOI Sensors and MEMS Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic FieldsOn-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing Beams; Non-Standard FinFET Devices for Small Volume Sample Sensors; 3D SOI Elements for System-on-Chip Applications; Routes towards Novel Active Pressure Sensors in SOI Technology; IV. Nanodots, Nanowires and Nanofilms; Photovoltage Performance of Ge/Si Nanostructures Grown on Intermediate Ultrathin SiOX Layers Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on SiliconEffect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiOX-Si Structures; A Model of the Evolution of the Au/Si Droplet Ensembles during Rapid Thermal Annealing at High Temperatures; The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors; Keywords Index; Authors Index |
| Record Nr. | UNINA-9910462517203321 |
| Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2011] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine / / edited by Alexei N. Nazarov and Jean-Pierre Raskin
| Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine / / edited by Alexei N. Nazarov and Jean-Pierre Raskin |
| Pubbl/distr/stampa | Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2011] |
| Descrizione fisica | 1 online resource (199 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
NazarovA. N (Alexei N.)
RaskinJ.-P <1971-> (Jean-Pierre) |
| Collana | Advanced materials research |
| Soggetto topico |
Semiconductors
Silicon-on-insulator technology Nanoelectromechanical systems Nanotechnology |
| Soggetto non controllato |
Nanoscaled
Semiconductor-on-insulator Sensors Insulator |
| ISBN | 3-03813-615-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices; Preface and Committee Members; Table of Contents; I. Technology of Semiconductor-On-Insulator Structures and Devices; ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications; Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures; Diamond - Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing; Hydrogen Gettering within Processed Oxygen-Implanted Silicon; II. Physics of New SOI Devices
Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical ModelSemi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels; Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs; High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs; Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures; Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs; Effects of High-Energy Neutrons on Advanced SOI MOSFETs; III. SOI Sensors and MEMS Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic FieldsOn-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing Beams; Non-Standard FinFET Devices for Small Volume Sample Sensors; 3D SOI Elements for System-on-Chip Applications; Routes towards Novel Active Pressure Sensors in SOI Technology; IV. Nanodots, Nanowires and Nanofilms; Photovoltage Performance of Ge/Si Nanostructures Grown on Intermediate Ultrathin SiOX Layers Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on SiliconEffect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiOX-Si Structures; A Model of the Evolution of the Au/Si Droplet Ensembles during Rapid Thermal Annealing at High Temperatures; The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors; Keywords Index; Authors Index |
| Record Nr. | UNINA-9910790325403321 |
| Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2011] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine / / edited by Alexei N. Nazarov and Jean-Pierre Raskin
| Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine / / edited by Alexei N. Nazarov and Jean-Pierre Raskin |
| Pubbl/distr/stampa | Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2011] |
| Descrizione fisica | 1 online resource (199 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
NazarovA. N (Alexei N.)
RaskinJ.-P <1971-> (Jean-Pierre) |
| Collana | Advanced materials research |
| Soggetto topico |
Semiconductors
Silicon-on-insulator technology Nanoelectromechanical systems Nanotechnology |
| Soggetto non controllato |
Nanoscaled
Semiconductor-on-insulator Sensors Insulator |
| ISBN | 3-03813-615-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices; Preface and Committee Members; Table of Contents; I. Technology of Semiconductor-On-Insulator Structures and Devices; ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications; Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures; Diamond - Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing; Hydrogen Gettering within Processed Oxygen-Implanted Silicon; II. Physics of New SOI Devices
Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical ModelSemi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels; Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs; High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs; Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures; Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs; Effects of High-Energy Neutrons on Advanced SOI MOSFETs; III. SOI Sensors and MEMS Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic FieldsOn-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing Beams; Non-Standard FinFET Devices for Small Volume Sample Sensors; 3D SOI Elements for System-on-Chip Applications; Routes towards Novel Active Pressure Sensors in SOI Technology; IV. Nanodots, Nanowires and Nanofilms; Photovoltage Performance of Ge/Si Nanostructures Grown on Intermediate Ultrathin SiOX Layers Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on SiliconEffect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiOX-Si Structures; A Model of the Evolution of the Au/Si Droplet Ensembles during Rapid Thermal Annealing at High Temperatures; The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors; Keywords Index; Authors Index |
| Record Nr. | UNINA-9910822644703321 |
| Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2011] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
