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Energy autonomous micro and nano systems [[electronic resource] /] / edited by Marc Belleville, Cyril Condemine
| Energy autonomous micro and nano systems [[electronic resource] /] / edited by Marc Belleville, Cyril Condemine |
| Pubbl/distr/stampa | London, : ISTE |
| Descrizione fisica | 1 online resource (394 p.) |
| Disciplina |
620.5
620/.5 |
| Altri autori (Persone) |
BellevilleMarc
CondemineCyril |
| Collana | ISTE |
| Soggetto topico |
Electric power supplies to apparatus
Low voltage systems Direct energy conversion Energy conservation - Equipment and supplies Nanoelectromechanical systems |
| ISBN |
1-118-56183-X
1-118-58750-2 1-118-58782-0 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Sensors at the core of building control -- Towards energy-autonomous medical implants -- Energy autonomous systems in aeronautic applications -- Energy harvesting by photovoltaic effect -- Mechanical energy harvesting -- Thermal energy harvesting -- Lithium micro-batteries -- Ultra-low power sensors -- Ultra-low power signal processing in autonomous systems -- Ultra-low power radio frequency communications and protocols -- Energy management in an autonomous microsystem -- Optimizing energy efficiency of sensor networks. |
| Record Nr. | UNINA-9910840893703321 |
| London, : ISTE | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
From MEMS to bio-MEMS and bio-NEMS manufacturing techniques and applications / / by Marc J. Madou
| From MEMS to bio-MEMS and bio-NEMS manufacturing techniques and applications / / by Marc J. Madou |
| Autore | Madou Marc J. |
| Edizione | [Third edition.] |
| Pubbl/distr/stampa | Boca Raton, FL : , : CRC Press, an imprint of Taylor and Francis, , 2011 |
| Descrizione fisica | 1 online resource (642 p.) |
| Disciplina | 620.5 |
| Soggetto topico |
Microelectromechanical systems
Nanoelectromechanical systems Microfluidics Solid state physics |
| Soggetto genere / forma | Electronic books. |
| ISBN |
0-429-10921-0
1-4200-5518-6 1-4398-9524-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Contents; Roadmap; Author; Acknowledgments; Chapter 1: Nonlithography-Based (Traditional) and Lithography-Based (Nontraditional) Manufacturing Compared; Chapter 2: Nature as an Engineering Guide: Biomimetics; Chapter 3: Nanotechnology: Top-Down and Bottom-Up Manufacturing Approaches Compared; Chapter 4: Packaging, Assembly, and Self-Assembly; Chapter 5: Selected Materials and Processes for MEMS and NEMS; Chapter 6: Metrology and MEMS/NEMS Modeling; Chapter 7: Scaling Laws; Chapter 8: Actuators; Chapter 9: Power and Brains in Miniature Devices
Chapter 10: MEMS and NEMS ApplicationsBack Cover |
| Record Nr. | UNINA-9910460580203321 |
Madou Marc J.
|
||
| Boca Raton, FL : , : CRC Press, an imprint of Taylor and Francis, , 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
From MEMS to bio-MEMS and bio-NEMS manufacturing techniques and applications / / by Marc J. Madou
| From MEMS to bio-MEMS and bio-NEMS manufacturing techniques and applications / / by Marc J. Madou |
| Autore | Madou Marc J. |
| Edizione | [Third edition.] |
| Pubbl/distr/stampa | Boca Raton, FL : , : CRC Press, an imprint of Taylor and Francis, , 2011 |
| Descrizione fisica | 1 online resource (642 p.) |
| Disciplina | 620.5 |
| Soggetto topico |
Microelectromechanical systems
Nanoelectromechanical systems Microfluidics Solid state physics |
| ISBN |
0-429-10921-0
1-4200-5518-6 1-4398-9524-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Contents; Roadmap; Author; Acknowledgments; Chapter 1: Nonlithography-Based (Traditional) and Lithography-Based (Nontraditional) Manufacturing Compared; Chapter 2: Nature as an Engineering Guide: Biomimetics; Chapter 3: Nanotechnology: Top-Down and Bottom-Up Manufacturing Approaches Compared; Chapter 4: Packaging, Assembly, and Self-Assembly; Chapter 5: Selected Materials and Processes for MEMS and NEMS; Chapter 6: Metrology and MEMS/NEMS Modeling; Chapter 7: Scaling Laws; Chapter 8: Actuators; Chapter 9: Power and Brains in Miniature Devices
Chapter 10: MEMS and NEMS ApplicationsBack Cover |
| Record Nr. | UNINA-9910797028703321 |
|
Madou Marc J.
|
||
| Boca Raton, FL : , : CRC Press, an imprint of Taylor and Francis, , 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
From MEMS to bio-MEMS and bio-NEMS manufacturing techniques and applications / / by Marc J. Madou
| From MEMS to bio-MEMS and bio-NEMS manufacturing techniques and applications / / by Marc J. Madou |
| Autore | Madou Marc J. |
| Edizione | [Third edition.] |
| Pubbl/distr/stampa | Boca Raton, FL : , : CRC Press, an imprint of Taylor and Francis, , 2011 |
| Descrizione fisica | 1 online resource (642 p.) |
| Disciplina | 620.5 |
| Soggetto topico |
Microelectromechanical systems
Nanoelectromechanical systems Microfluidics Solid state physics |
| ISBN |
0-429-10921-0
1-4200-5518-6 1-4398-9524-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Contents; Roadmap; Author; Acknowledgments; Chapter 1: Nonlithography-Based (Traditional) and Lithography-Based (Nontraditional) Manufacturing Compared; Chapter 2: Nature as an Engineering Guide: Biomimetics; Chapter 3: Nanotechnology: Top-Down and Bottom-Up Manufacturing Approaches Compared; Chapter 4: Packaging, Assembly, and Self-Assembly; Chapter 5: Selected Materials and Processes for MEMS and NEMS; Chapter 6: Metrology and MEMS/NEMS Modeling; Chapter 7: Scaling Laws; Chapter 8: Actuators; Chapter 9: Power and Brains in Miniature Devices
Chapter 10: MEMS and NEMS ApplicationsBack Cover |
| Record Nr. | UNINA-9910800163403321 |
|
Madou Marc J.
|
||
| Boca Raton, FL : , : CRC Press, an imprint of Taylor and Francis, , 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
From MEMS to bio-MEMS and bio-NEMS manufacturing techniques and applications / / by Marc J. Madou
| From MEMS to bio-MEMS and bio-NEMS manufacturing techniques and applications / / by Marc J. Madou |
| Autore | Madou Marc J. |
| Edizione | [Third edition.] |
| Pubbl/distr/stampa | Boca Raton, FL : , : CRC Press, an imprint of Taylor and Francis, , 2011 |
| Descrizione fisica | 1 online resource (642 p.) |
| Disciplina | 620.5 |
| Soggetto topico |
Microelectromechanical systems
Nanoelectromechanical systems Microfluidics Solid state physics |
| ISBN |
0-429-10921-0
1-4200-5518-6 1-4398-9524-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Contents; Roadmap; Author; Acknowledgments; Chapter 1: Nonlithography-Based (Traditional) and Lithography-Based (Nontraditional) Manufacturing Compared; Chapter 2: Nature as an Engineering Guide: Biomimetics; Chapter 3: Nanotechnology: Top-Down and Bottom-Up Manufacturing Approaches Compared; Chapter 4: Packaging, Assembly, and Self-Assembly; Chapter 5: Selected Materials and Processes for MEMS and NEMS; Chapter 6: Metrology and MEMS/NEMS Modeling; Chapter 7: Scaling Laws; Chapter 8: Actuators; Chapter 9: Power and Brains in Miniature Devices
Chapter 10: MEMS and NEMS ApplicationsBack Cover |
| Record Nr. | UNINA-9910829016703321 |
|
Madou Marc J.
|
||
| Boca Raton, FL : , : CRC Press, an imprint of Taylor and Francis, , 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Frontiers in electronics : selected papers from the Workshop on Frontiers in Electronics 2011 (WOFE-11), San Juan, Puerto-Rico, 18-21 December 2011 / / editors, Sorin Cristoloveanu, IMEP, INP Grenoble, MINATEC, France, Michael S. Shur, Rensselaer Polytechnic Institute, USA
| Frontiers in electronics : selected papers from the Workshop on Frontiers in Electronics 2011 (WOFE-11), San Juan, Puerto-Rico, 18-21 December 2011 / / editors, Sorin Cristoloveanu, IMEP, INP Grenoble, MINATEC, France, Michael S. Shur, Rensselaer Polytechnic Institute, USA |
| Pubbl/distr/stampa | New Jersey : , : World Scientific, , [2013] |
| Descrizione fisica | 1 online resource (viii, 264 pages) : illustrations (some color) |
| Disciplina | 600 |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Electronics - Technological innovations
Nanoelectromechanical systems Optoelectronics Metal oxide semiconductors, Complementary |
| ISBN | 981-4541-86-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Preface; CONTENTS; Lévy Flight of Holes in InP Semiconductor Scintillator S. Luryi and A. Subashiev; 1. Introduction; 2. Photon Assisted Random Walk of Minority Carriers in InP; 2.1. Diffusion equation with a recycling term; 2.2. Jump distribution; 2.3. Stable distribution of minority carriers; 2.4. Stationary hole distribution for constant excitation; 3. Transmission and Reflection Luminescence Spectra; 4. Luminescence Filtering and Urbach Tails; 5. Photon Collection Efficiency in InP Scintillator; 6. Layered Scintillator Based on Photon-Assisted Transport of Holes to Radiation Sites
3. Lasing Characteristics4. Conclusions; Reference; GaN Based 3D Core-Shell LEDs X. Wang, S. Li, S. Fündling, J. Wei, M. Erenburg, J. Ledig, H. H. Wehmann, A. Waag, W. Bergbauer, M. Mandl, M. Strassburg and U. Steegmüller; 1. Introduction; 2. GaN Based 3D LEDs on Si Substrate; 2.1. GaN based 3D core-shell LEDs on deep etched Si substrate; 2.2. Growth of GaN 3D structure on Si substrate; 3. Growth of GaN 3D Structure on Sapphire Substrate; 3.1. Carrier gas, polarity and its influence on growth of GaN 3D structure 3.2. Mixed polar GaN columns and Polarity analysis by photo-assisted Kelvin probe force microscopy3.3. Growth of single nitride polar GaN columns; 4. Growth and Characterization of GaN Based 3D Core-Shell LED on Sapphire Substrate; 5. Summary and Outlook; Acknowledgements; References; Progress in SiC Materials/Devices and Their Competition D. K. Schroder; 1. Introduction; 2. Materials; 2.1. Bulk Defects; 2.2. Carrier Lifetimes; 2.3. Oxide and Interface Traps; 3. SiC Devices; 3.1. Schottky Diodes; 3.2. MOSFETs; 3.3. Junction FETs; 4. The Competition; 4.1. Silicon; 4.2. Gallium Nitride 5. Cosmic Ray Induced Failures6. Summary; Acknowledgments; References; Performance and Applications of Deep UV LED M. Shatalov, A. Lunev, X. Hu, O. Bilenko, I. Gaska, W. Sun, J. Yang, A. Dobrinsky, Y. Bilenko, R. Gaska and M. Shur; 1. Introduction; 2. DUV LED Efficiency; 3. DUV LED Fabrication; 4. Thermal Analysis of DUV LED; 5. DUV LED Sterilization; 6. Conclusion; Acknowledgments; Appendix A. Calculation of Thermal Resistances; Appendix B. Thermal Conductivity of AlxGa1-xN Semiconductor; References Ordered GaN/InGaN Nanorods Arrays Grown by Molecular Beam Epitaxy for Phosphor-Free White Light Emission S. Albert, A. Bengoechea-Encabo, M. A. Sanchez-García, F. Barbagini, E. Calleja, E. Luna, A. Trampert, U. Jahn,P. Lefebvre, L. L. López, S. Estradé, J. M. Rebled, F. Peiró,G. Nataf, P. de Mierry and J. Zuñiga-Pérez |
| Record Nr. | UNINA-9910790429103321 |
| New Jersey : , : World Scientific, , [2013] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Frontiers in electronics : selected papers from the Workshop on Frontiers in Electronics 2011 (WOFE-11), San Juan, Puerto-Rico, 18-21 December 2011 / / editors, Sorin Cristoloveanu, IMEP, INP Grenoble, MINATEC, France, Michael S. Shur, Rensselaer Polytechnic Institute, USA
| Frontiers in electronics : selected papers from the Workshop on Frontiers in Electronics 2011 (WOFE-11), San Juan, Puerto-Rico, 18-21 December 2011 / / editors, Sorin Cristoloveanu, IMEP, INP Grenoble, MINATEC, France, Michael S. Shur, Rensselaer Polytechnic Institute, USA |
| Pubbl/distr/stampa | New Jersey : , : World Scientific, , [2013] |
| Descrizione fisica | 1 online resource (viii, 264 pages) : illustrations (some color) |
| Disciplina | 600 |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Electronics - Technological innovations
Nanoelectromechanical systems Optoelectronics Metal oxide semiconductors, Complementary |
| ISBN | 981-4541-86-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Preface; CONTENTS; Lévy Flight of Holes in InP Semiconductor Scintillator S. Luryi and A. Subashiev; 1. Introduction; 2. Photon Assisted Random Walk of Minority Carriers in InP; 2.1. Diffusion equation with a recycling term; 2.2. Jump distribution; 2.3. Stable distribution of minority carriers; 2.4. Stationary hole distribution for constant excitation; 3. Transmission and Reflection Luminescence Spectra; 4. Luminescence Filtering and Urbach Tails; 5. Photon Collection Efficiency in InP Scintillator; 6. Layered Scintillator Based on Photon-Assisted Transport of Holes to Radiation Sites
3. Lasing Characteristics4. Conclusions; Reference; GaN Based 3D Core-Shell LEDs X. Wang, S. Li, S. Fündling, J. Wei, M. Erenburg, J. Ledig, H. H. Wehmann, A. Waag, W. Bergbauer, M. Mandl, M. Strassburg and U. Steegmüller; 1. Introduction; 2. GaN Based 3D LEDs on Si Substrate; 2.1. GaN based 3D core-shell LEDs on deep etched Si substrate; 2.2. Growth of GaN 3D structure on Si substrate; 3. Growth of GaN 3D Structure on Sapphire Substrate; 3.1. Carrier gas, polarity and its influence on growth of GaN 3D structure 3.2. Mixed polar GaN columns and Polarity analysis by photo-assisted Kelvin probe force microscopy3.3. Growth of single nitride polar GaN columns; 4. Growth and Characterization of GaN Based 3D Core-Shell LED on Sapphire Substrate; 5. Summary and Outlook; Acknowledgements; References; Progress in SiC Materials/Devices and Their Competition D. K. Schroder; 1. Introduction; 2. Materials; 2.1. Bulk Defects; 2.2. Carrier Lifetimes; 2.3. Oxide and Interface Traps; 3. SiC Devices; 3.1. Schottky Diodes; 3.2. MOSFETs; 3.3. Junction FETs; 4. The Competition; 4.1. Silicon; 4.2. Gallium Nitride 5. Cosmic Ray Induced Failures6. Summary; Acknowledgments; References; Performance and Applications of Deep UV LED M. Shatalov, A. Lunev, X. Hu, O. Bilenko, I. Gaska, W. Sun, J. Yang, A. Dobrinsky, Y. Bilenko, R. Gaska and M. Shur; 1. Introduction; 2. DUV LED Efficiency; 3. DUV LED Fabrication; 4. Thermal Analysis of DUV LED; 5. DUV LED Sterilization; 6. Conclusion; Acknowledgments; Appendix A. Calculation of Thermal Resistances; Appendix B. Thermal Conductivity of AlxGa1-xN Semiconductor; References Ordered GaN/InGaN Nanorods Arrays Grown by Molecular Beam Epitaxy for Phosphor-Free White Light Emission S. Albert, A. Bengoechea-Encabo, M. A. Sanchez-García, F. Barbagini, E. Calleja, E. Luna, A. Trampert, U. Jahn,P. Lefebvre, L. L. López, S. Estradé, J. M. Rebled, F. Peiró,G. Nataf, P. de Mierry and J. Zuñiga-Pérez |
| Record Nr. | UNINA-9910810034703321 |
| New Jersey : , : World Scientific, , [2013] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Frontiers in electronics [[electronic resource] /] / editors, Sorin Cristoloveanu, Michael S. Shur
| Frontiers in electronics [[electronic resource] /] / editors, Sorin Cristoloveanu, Michael S. Shur |
| Pubbl/distr/stampa | Singapore, : World Scientific Pub. Co., c2009 |
| Descrizione fisica | 1 online resource (335 p.) |
| Disciplina | 621.381 |
| Altri autori (Persone) |
CristoloveanuSorin
ShurMichael |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Electronics - Technological innovations
Nanoelectromechanical systems Optoelectronics Metal oxide semiconductors, Complementary |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-282-75802-0
9786612758027 981-4273-02-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS; Preface; Chapter 1. Ultimate CMOS, Novel MOSFETS, and Alternative Transistors; Challenges and Progress in III-V MOSFETs for CMOS Circuits S. Oktyabrsky, M. Yakimov, V. Tokranov, R. Kambhampati, H. Bakhru, S. Koveshnikov, W. Tsai, F. Zhu and J. Lee; 1. Introduction; 2. MOSFET vs. HEMT; 3. Wish List for III-V CMOS; 4. Interface Passivation Technologies; 5. Amorphous Si Interface Passivation Layer; 6. Enhancement- Mode Inversion-Type MOSFET; 7. Conclusions; Acknowledgements; References
Short Channel, Floating Body, and 3D Coupling Effects in Triple-Gate MOSFET K.-I. Na, J.-H. Lee S. Cristoloveanu, Y.-H. Bae, P. Patruno and W. Xiong1. Introduction; 2. Experiment; 3. Short Channel Effect; 4. Three Dimensional Coupling Effect; 5. Gate-Induced Floating Body Effect (GIFBE); 6. Conclusions; Acknowledgments; References; Analog and Digital Performance of the Screen-Grid Field Effect Transistor (SGrFET) K. Fobelets, P. W. Ding, Y. Shadrokh and J. E. Velazquez-Perez; 1. Introduction; 2. The simulated device structures; 3. Analog RF performance of the devices 4. Digital performance of the devices 5. Conclusions; Acknowledgments; References; Analytical Characterization and Modeling of Shielded Test Structures for RF-CMOS E. Torres-Rios, R. Torres-Torres, R. Murphy-Arteaga and E. A. Gutiérrez-D.; 1. Introduction; 2. Description of fabricated test structures; 3. General models for RF shielded test structures; 3.1 General model for the shielded test structure with pad probe design at the second metal level; 3.2 General model for the shielded test structure with pad probe design at the third metal level; 4. Equivalent circuit modeling 4.1 Calculation of the model parameters 4.2 Analytical parameter extraction; 5. Results and discussion; 6. Conclusions ; 7. Acknowledgments; References; Germanium on Sapphire H. S. Gamble, P. T. Baine, H. Wadsworth, Y. H. Low, P. V. Rainey, F. H. Ruddell, B. M. Armstrong, D. W. McNeill and S. J. N. Mitchell; 1. Introduction; 2. Semiconductor properties and applications; 3. Sapphire properties and applications; 4. Germanium on Sapphire; 5. Passives and Parasitics; 6. Optical Detection; 7. Germanium ICs; 8. Summary and Conclusions; References Single Event Effects in the Nano Era M. L. Alles, L. W. Massengill, R. D. Schrimpf, R. A. Weller and K. F. Galloway 1. Introduction; 2. Single Event Effects; 3. Differential Scaling; 4. Mitigation; 5. Analysis; 6. Opportunities; 7. Conclusions; Acknowledgments; References; An Efficient Numerical Method of DC Modeling for Power MOSFET, MESFET and AlGaN/GaN HEMT T. Rahman, M. A. Huque and S. K. Islam; 1. Introduction; 2. Mathematical Theory; 3. Model Development and Verification Using Analytical Data; 3.1. MOSFET; 3.2. MESFET; 4. Model Development and Verification Using Experimental Data 5. Conclusion |
| Record Nr. | UNINA-9910456151803321 |
| Singapore, : World Scientific Pub. Co., c2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Frontiers in electronics [[electronic resource] /] / editors, Sorin Cristoloveanu, Michael S. Shur
| Frontiers in electronics [[electronic resource] /] / editors, Sorin Cristoloveanu, Michael S. Shur |
| Pubbl/distr/stampa | Singapore, : World Scientific Pub. Co., c2009 |
| Descrizione fisica | 1 online resource (335 p.) |
| Disciplina | 621.381 |
| Altri autori (Persone) |
CristoloveanuSorin
ShurMichael |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Electronics - Technological innovations
Nanoelectromechanical systems Optoelectronics Metal oxide semiconductors, Complementary |
| ISBN |
1-282-75802-0
9786612758027 981-4273-02-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS; Preface; Chapter 1. Ultimate CMOS, Novel MOSFETS, and Alternative Transistors; Challenges and Progress in III-V MOSFETs for CMOS Circuits S. Oktyabrsky, M. Yakimov, V. Tokranov, R. Kambhampati, H. Bakhru, S. Koveshnikov, W. Tsai, F. Zhu and J. Lee; 1. Introduction; 2. MOSFET vs. HEMT; 3. Wish List for III-V CMOS; 4. Interface Passivation Technologies; 5. Amorphous Si Interface Passivation Layer; 6. Enhancement- Mode Inversion-Type MOSFET; 7. Conclusions; Acknowledgements; References
Short Channel, Floating Body, and 3D Coupling Effects in Triple-Gate MOSFET K.-I. Na, J.-H. Lee S. Cristoloveanu, Y.-H. Bae, P. Patruno and W. Xiong1. Introduction; 2. Experiment; 3. Short Channel Effect; 4. Three Dimensional Coupling Effect; 5. Gate-Induced Floating Body Effect (GIFBE); 6. Conclusions; Acknowledgments; References; Analog and Digital Performance of the Screen-Grid Field Effect Transistor (SGrFET) K. Fobelets, P. W. Ding, Y. Shadrokh and J. E. Velazquez-Perez; 1. Introduction; 2. The simulated device structures; 3. Analog RF performance of the devices 4. Digital performance of the devices 5. Conclusions; Acknowledgments; References; Analytical Characterization and Modeling of Shielded Test Structures for RF-CMOS E. Torres-Rios, R. Torres-Torres, R. Murphy-Arteaga and E. A. Gutiérrez-D.; 1. Introduction; 2. Description of fabricated test structures; 3. General models for RF shielded test structures; 3.1 General model for the shielded test structure with pad probe design at the second metal level; 3.2 General model for the shielded test structure with pad probe design at the third metal level; 4. Equivalent circuit modeling 4.1 Calculation of the model parameters 4.2 Analytical parameter extraction; 5. Results and discussion; 6. Conclusions ; 7. Acknowledgments; References; Germanium on Sapphire H. S. Gamble, P. T. Baine, H. Wadsworth, Y. H. Low, P. V. Rainey, F. H. Ruddell, B. M. Armstrong, D. W. McNeill and S. J. N. Mitchell; 1. Introduction; 2. Semiconductor properties and applications; 3. Sapphire properties and applications; 4. Germanium on Sapphire; 5. Passives and Parasitics; 6. Optical Detection; 7. Germanium ICs; 8. Summary and Conclusions; References Single Event Effects in the Nano Era M. L. Alles, L. W. Massengill, R. D. Schrimpf, R. A. Weller and K. F. Galloway 1. Introduction; 2. Single Event Effects; 3. Differential Scaling; 4. Mitigation; 5. Analysis; 6. Opportunities; 7. Conclusions; Acknowledgments; References; An Efficient Numerical Method of DC Modeling for Power MOSFET, MESFET and AlGaN/GaN HEMT T. Rahman, M. A. Huque and S. K. Islam; 1. Introduction; 2. Mathematical Theory; 3. Model Development and Verification Using Analytical Data; 3.1. MOSFET; 3.2. MESFET; 4. Model Development and Verification Using Experimental Data 5. Conclusion |
| Record Nr. | UNINA-9910780726103321 |
| Singapore, : World Scientific Pub. Co., c2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Frontiers in electronics : proceedings of the workshop on frontiers in electronics 2009, Rincon, Puerto Rico, 13-16 December 2009 / / editors, Sorin Cristoloveanu, Grenoble INP, Minatec, France, Michael S. Shur, Rensselaer Polytechnic Institute, USA
| Frontiers in electronics : proceedings of the workshop on frontiers in electronics 2009, Rincon, Puerto Rico, 13-16 December 2009 / / editors, Sorin Cristoloveanu, Grenoble INP, Minatec, France, Michael S. Shur, Rensselaer Polytechnic Institute, USA |
| Pubbl/distr/stampa | River Edge, N.J., : World Scientific, c2009 |
| Descrizione fisica | 1 online resource (ix, 230 pages) : illustrations (some color) |
| Disciplina | 621.381 |
| Collana | Selected Topics in Electronics and Systems |
| Soggetto topico |
Electronics - Technological innovations
Nanoelectromechanical systems Optoelectronics Metal oxide semiconductors, Complementary |
| ISBN | 981-4383-72-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Preface; CONTENTS; Advanced Terahertz and Photonics Devices; Broadband Terahertz Wave Generation, Detection and Coherent Control Using Terahertz Gas Photonics J. Liu, J. Dai, X. Lu, I. C. Ho and X. C. Zhang; 1. Introduction; 2. The Mechanism of THz Generation and Detection in Gas; 3. THz Wave Generation and Detection in Different Gases; 4. THz Remote Generation and Detection; 5. Coherent Control of THz Generation; 6. Conclusion; Acknowledgement; References; How do We Lose Excitation in the Green? C. Wetzel, Y. Xia, W. Zhao, Y. Li, M. Zhu, S. You, L. Zhao, W. Hou, C. Stark and M. Dibiccari
1. Introduction2. Material and Methods; 3. Experimental; 4. Discussion; 5. Conclusions; Acknowledgments; References; Silicon Finfets as Detectors of Terahertz and Sub-Terahertz Radiation W. Stillman, C. Donais, S. Rumyantsev, M. Shur, D. Veksler, C. Hobbs, C. Smith, G. Bersuker, W. Taylor and R. Jammy; 1. Introduction; 2. Plasma Wave Detectors; 3. FinFET Structure; 4. Response Measurements; 5. Noise Equivalent Power; 6. Conclusion; Acknowledgments; References Progress in Development of Room Temperature CW GaSb based Diode Lasers for 2-3.5 μm Spectral Region T. Hosoda, J. Chen, G. Tsvid, D. Westerfeld, R. Liang, G. Kipshidze, L. Shterengas and G. Belenky1. Introduction; 2. Results and Discussion; 2.1. Waveguide core width and asymmetry optimization for 2 μm emitting devices; 2.2. CW power characteristics over 2.2 to 3.3 μm wavelength range; 3. Conclusion; Acknowledgements; References; WDM Demultiplexing by Using Surface Plasmon Polaritons D. K. Mynbaev and V. Sukharenko; 1. Introduction; 2. The Frequency of SPPs 3. The Concept of WDM Demultiplexing with SPPs4. Summary; Acknowledgment; References; Silicon and Germanium on Insulator and Advanced CMOS and MOSHFETs; Connecting Electrical and Structural Dielectric Characteristics G. Bersuker, D. Veksler, C. D. Young, H. Park, W. Taylor, P. Kirsch, R. Jammy, L. Morassi, A. Padovani and L. Larcher; 1. Introduction; 2. Noise Generating Defects in High-k Gate Stacks; 2.1. Analysis of Random Telegraph Signal Noise (RTN); 2.2. Extracting defect characteristics; 3. Defects Responsible for High-k Gate Stack Degradation/Breakdown 3.1. Physical evidences of O-vacancies in IL3.2. Defects identification; 4. Vfb Roll-Off Phenomenon; 4.1. Roll-off mechanism; 4.2. Generation of positively charged defects; 4.3. Origin of R-O defects and R-O suppression; References; Advanced Solutions for Mobility Enhancement in SOI MOSFETs L. Pham-Nguyen, C. Fenouillet-Beranger, P. Perreau, S. Denorme, G. Ghibaudo, O. Faynot, T. Skotnicki, A. Ohata, M. Casse, I. Ionica, W. van den Daele, K-H. Park, S-J. Chang, Y-H. Bae, M. Bawedin and S. Cristoloveanu; 1. Introduction; 2. Series Resistance Reduction; 3. High-K Dielectrics; 4. Metal Gate 5. Strain |
| Record Nr. | UNINA-9910779883603321 |
| River Edge, N.J., : World Scientific, c2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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