Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
Carrier transport in nanoscale MOS transistors / / Hideaki Tsuchiya, Yoshinari Kamakura
| Carrier transport in nanoscale MOS transistors / / Hideaki Tsuchiya, Yoshinari Kamakura |
| Autore | Tsuchiya Hideaki |
| Pubbl/distr/stampa | Singapore : , : Wiley, , 2016 |
| Descrizione fisica | 1 online resource (387 pages) : illustrations |
| Disciplina | 621.38152 |
| Altri autori (Persone) | KamakuraYoshinari |
| Soggetto topico |
Nanoelectromechanical systems
Electron transport Metal oxide semiconductors |
| ISBN |
1-118-87172-3
1-118-87171-5 1-118-87173-1 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
-- Preface ix -- Acknowledgements xi -- 1 Emerging Technologies 1 -- 1.1 Moore's Law and the Power Crisis 1 -- 1.2 Novel Device Architectures 2 -- 1.3 High Mobility Channel Materials 5 -- 1.4 Two?-Dimensional (2?-D) Materials 7 -- 1.5 Atomistic Modeling 8 -- 2 First?-principles calculations for Si nanostructures 12 -- 2.1 Band structure calculations 12 -- 2.1.1 Si ultrathin?-body structures 12 -- 2.1.2 Si nanowires 17 -- 2.1.3 Strain effects on band structures: From bulk to nanowire 20 -- 2.2 Tunneling current calculations through Si/SiO2/Si structures 31 -- 2.2.1 Atomic models of Si (001)/SiO2 /Si (001) structures 32 -- 2.2.2 Current?-voltage characteristics 33 -- 2.2.3 SiO2 thickness dependences 35 -- 3 Quasi?-ballistic Transport in Si Nanoscale MOSFETs 41 -- 3.1 A picture of quasi?-ballistic transport simulated using quantum?-corrected Monte Carlo simulation 41 -- 3.1.1 Device structure and simulation method 42 -- 3.1.2 Scattering rates for 3?-D electron gas 44 -- 3.1.3 Ballistic transport limit 46 -- 3.1.4 Quasi?-ballistic transport 50 -- 3.1.5 Role of elastic and inelastic phonon scattering 51 -- 3.2 Multi?-sub?-band Monte Carlo simulation considering quantum confinement in inversion layers 55 -- 3.2.1 Scattering Rates for 2?-D Electron Gas 56 -- 3.2.2 Increase in Dac for SOI MOSFETs 58 -- 3.2.3 Simulated electron mobilities in bulk Si and SOI MOSFETs 59 -- 3.2.4 Electrical characteristics of Si DG?-MOSFETs 61 -- 3.3 Extraction of quasi?-ballistic transport parameters in Si DG?-MOSFETs 64 -- 3.3.1 Backscattering coefficient 64 -- 3.3.2 Current drive 66 -- 3.3.3 Gate and drain bias dependences 67 -- 3.4 Quasi?-ballistic transport in Si junctionless transistors 69 -- 3.4.1 Device structure and simulation conditions 70 -- 3.4.2 Influence of SR scattering 71 -- 3.4.3 Influence of II scattering 74 -- 3.4.4 Backscattering coefficient 75 -- 3.5 Quasi?-ballistic transport in GAA?-Si nanowire MOSFETs 76 -- 3.5.1 Device structure and 3DMSB?-MC method 76 -- 3.5.2 Scattering rates for 1?-D electron gas 77.
3.5.3 ID-VG characteristics and backscattering coefficient 79 -- 4 Phonon Transport in Si Nanostructures 85 -- 4.1 Monte Carlo simulation method 87 -- 4.1.1 Phonon dispersion model 87 -- 4.1.2 Particle simulation of phonon transport 88 -- 4.1.3 Free flight and scattering 89 -- 4.2 Simulation of thermal conductivity 91 -- 4.2.1 Thermal conductivity of bulk silicon 91 -- 4.2.2 Thermal conductivity of silicon thin films 94 -- 4.2.3 Thermal conductivity of silicon nanowires 98 -- 4.2.4 Discussion on Boundary scattering effect 100 -- 4.3 Simulation of heat conduction in devices 102 -- 4.3.1 Simulation method 102 -- 4.3.2 Simple 1?-D structure 103 -- 4.3.3 FinFET structure 106 -- 5 Carrier Transport in High?-mobility MOSFETs 112 -- 5.1 Quantum?-corrected MC Simulation of High?-mobility MOSFETs 112 -- 5.1.1 Device Structure and Band Structures of Materials 112 -- 5.1.2 Band Parameters of Si, Ge, and III?-V Semiconductors 114 -- 5.1.3 Polar?-optical Phonon (POP) Scattering in III?-V Semiconductors 115 -- 5.1.4 Advantage of UTB Structure 116 -- 5.1.5 Drive Current of III?-V, Ge and Si n?-MOSFETs 119 -- 5.2 Source?-drain Direct Tunneling in Ultrascaled MOSFETs 124 -- 5.3 Wigner Monte Carlo (WMC) Method 125 -- 5.3.1 Wigner Transport Formalism 126 -- 5.3.2 Relation with Quantum?-corrected MC Method 129 -- 5.3.3 WMC Algorithm 131 -- 5.3.4 Description of Higher?-order Quantized Subbands 133 -- 5.3.5 Application to Resonant?-tunneling Diode 133 -- 5.4 Quantum Transport Simulation of III?-V n?-MOSFETs with Multi?-subband WMC (MSB?-WMC) Method 138 -- 5.4.1 Device Structure 138 -- 5.4.2 POP Scattering Rate for 2?-D Electron Gas 139 -- 5.4.3 ID-VG Characteristics for InGaAs DG?-MOSFETs 139 -- 5.4.4 Channel Length Dependence of SDT Leakage Current 143 -- 5.4.5 Effective Mass Dependence of Subthreshold Current Properties 144 -- 6 Atomistic Simulations of Si, Ge and III?-V Nanowire MOSFETs 151 -- 6.1 Phonon?-limited electron mobility in Si nanowires 151 -- 6.1.1 Band structure calculations 152. 6.1.2 Electron?-phonon interaction 161 -- 6.1.3 Electron mobility 162 -- 6.2 Comparison of phonon?-limited electron mobilities between Si and Ge nanowires 168 -- 6.3 Ballistic performances of Si and InAs nanowire MOSFETs 173 -- 6.3.1 Band structures 174 -- 6.3.2 Top?-of?-the?-barrier model 174 -- 6.3.3 ID-VG characteristics 177 -- 6.3.4 Quantum capacitances 178 -- 6.3.5 Power?-delay?-product 179 -- 6.4 Ballistic performances of InSb, InAs, and GaSb nanowire MOSFETs 181 -- 6.4.1 Band structures 182 -- 6.4.2 ID-VG characteristics 182 -- 6.4.3 Power?-delay?-product 186 -- Appendix A: Atomistic Poisson equation 187 -- Appendix B: Analytical expressions of electron?-phonon interaction Hamiltonian matrices 188 -- 7 2?-D Materials and Devices 191 -- 7.1 2?-D Materials 191 -- 7.1.1 Fundamental Properties of Graphene, Silicene and Germanene 192 -- 7.1.2 Features of 2?-D Materials as an FET Channel 197 -- 7.2 Graphene Nanostructures with a Bandgap 198 -- 7.2.1 Armchair?-edged Graphene Nanoribbons (A?-GNRs) 199 -- 7.2.2 Relaxation Effects of Edge Atoms 203 -- 7.2.3 Electrical Properties of A?-GNR?-FETs Under Ballistic Transport 205 -- 7.2.4 Bilayer Graphenes (BLGs) 209 -- 7.2.5 Graphene Nanomeshes (GNMs) 214 -- 7.3 Influence of Bandgap Opening on Ballistic Electron Transport in BLG and A?-GNR?-MOSFETs 215 -- 7.3.1 Small Bandgap Regime 217 -- 7.3.2 Large Bandgap Regime 219 -- 7.4 Silicene, Germanene and Graphene Nanoribbons 221 -- 7.4.1 Bandgap vs Ribbon Width 222 -- 7.4.2 Comparison of Band Structures 222 -- 7.5 Ballistic MOSFETs with Silicene, Germanene and Graphene nanoribbons 223 -- 7.5.1 ID-VG Characteristics 223 -- 7.5.2 Quantum Capacitances 224 -- 7.5.3 Channel Charge Density and Average Electron Velocity 225 -- 7.5.4 Source?-drain Direct Tunneling (SDT) 226 -- 7.6 Electron Mobility Calculation for Graphene on Substrates 228 -- 7.6.1 Band Structure 229 -- 7.6.2 Scattering Mechanisms 229 -- 7.6.3 Carrier Degeneracy 231 -- 7.6.4 Electron Mobility Considering Surface Optical Phonon Scattering of Substrates 232. 7.6.5 Electron Mobility Considering Charged Impurity Scattering 234 -- 7.7 Germanane MOSFETs 236 -- 7.7.1 Atomic Model for Germanane Nanoribbon Structure 237 -- 7.7.2 Band Structure and Electron Effective Mass 238 -- 7.7.3 Electron Mobility 240 -- Appendix A: Density?-of?-states for Carriers in Graphene 242 -- References 242 -- Index 247. |
| Record Nr. | UNINA-9910830798903321 |
Tsuchiya Hideaki
|
||
| Singapore : , : Wiley, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Computing with memory for energy-efficient robust systems / / Somnath Paul, Swarup Bhunia
| Computing with memory for energy-efficient robust systems / / Somnath Paul, Swarup Bhunia |
| Autore | Paul Somnath |
| Edizione | [1st ed. 2014.] |
| Pubbl/distr/stampa | New York : , : Springer, , 2014 |
| Descrizione fisica | 1 online resource (xiii, 210 pages) : illustrations (some color) |
| Disciplina |
004.1
620 621.381 621.3815 |
| Collana | Gale eBooks |
| Soggetto topico |
Nanoelectromechanical systems
Computer engineering |
| ISBN | 1-4614-7798-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Part I Introduction -- Challenges in Computing for Nanoscale Technologies -- A Survey of Computing Architectures -- Motivation for a Memory-Based Computing Hardware -- Part II Memory Based Computing -- Key Features of Memory-Based Computing -- Overview of Hardware and Software Architectures -- Application of Memory-Based Computing -- Part III Hardware Framework -- A Memory Based Generic Reconfigurable Framework -- MAHA Hardware Architecture -- Part IV Software Framework -- Application Analysis -- Application Mapping to MBC Hardware. |
| Record Nr. | UNINA-9910299745203321 |
|
Paul Somnath
|
||
| New York : , : Springer, , 2014 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Contemporary trends in semiconductor devices : theory, experiment and applications / / Rupam Goswami, Rajesh Saha, editors
| Contemporary trends in semiconductor devices : theory, experiment and applications / / Rupam Goswami, Rajesh Saha, editors |
| Pubbl/distr/stampa | Singapore : , : Springer Singapore, , [2022] |
| Descrizione fisica | 1 online resource (313 pages) |
| Disciplina | 621.3815 |
| Collana | Lecture notes in electrical engineering |
| Soggetto topico |
Electronic circuits
Nanoelectromechanical systems Photovoltaic power generation |
| ISBN |
981-16-9124-X
981-16-9123-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910743234203321 |
| Singapore : , : Springer Singapore, , [2022] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Disclosing materials at the nanoscale : proceedings of the International Symposium "Disclosing Materials at the Nanoscale" of CIMTEC 2006 - 11th International Ceramics Congress and 4th Forum on New Materials, held in Acireale, Sicily, Italy on June 4-9, 2006 / / edited by P. Vincenzini, World Academy of Ceramics and National Research Council, Italy, G. Marletta, University of Catania, Italy
| Disclosing materials at the nanoscale : proceedings of the International Symposium "Disclosing Materials at the Nanoscale" of CIMTEC 2006 - 11th International Ceramics Congress and 4th Forum on New Materials, held in Acireale, Sicily, Italy on June 4-9, 2006 / / edited by P. Vincenzini, World Academy of Ceramics and National Research Council, Italy, G. Marletta, University of Catania, Italy |
| Pubbl/distr/stampa | Stafa-Zuerich : , : Trans Tech Publications Limited on behalf of Techna Group, , [2006] |
| Descrizione fisica | 1 online resource (220 p.) |
| Disciplina | 220 |
| Altri autori (Persone) |
VincenziniP
MarlettaG |
| Collana | Advances in science and technology |
| Soggetto topico |
Nanoelectromechanical systems
Nanostructured materials |
| Soggetto genere / forma | Electronic books. |
| ISBN | 3-03813-099-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Disclosing Materials at the Nanoscale; Committee; Preface; Table of Contents; Session 1 - Synthesis, Functionalization and Properties of Nanomaterials; Direct Synthesis of Tungsten Oxide Nanowires on Microscope Cover Glass; Electrochemical Control of the Magnetic Properties of Co and CoCu/Co Nanowires; In Situ Observation of Quantized Growth of Titanium Silicide in Ultra High Vacuum Transmission Electron Microscope (UHV-TEM); Nanocrystalline TiO2 for Solar Cells and Lithium Batteries
Synthesis and Characterization of Mesostructured Silicas and Gold Frameworks as Active Matrices for Biomolecule EncapsulationSynthesis and Cathodoluminescence Study of Well-Aligned Planar-Tip and Tapered-Tip ZnO Nanorods; Self-Assembled Low-Resistivity NiSi Nanowire Arrays on Epitaxial Si0.7Ge0.3 on (001)Si; Preparation and Cathodoluminescence Properties of Ga-Doped ZnS Nanowalls; Nanoparticles of La(1-x)SrxMnO3 (x = 0.33, 0.20) Assembled into Hollow Nanostructures for Solid Oxide Fuel Cells; Preparation of SiC Nanofibers by Using the Polymer Blend Technique Investigation on the Reinforcement of Multi-Walled Carbon Nanotubes on Alumina MatrixTemplate Synthesis of Nanostructured Carbons; Characterization of Fullerene / TriA-PI Composites; Session 2 - Nanoscale Characterization and Techniques; Carbon-Based and Other Nanostructures Obtained via Cluster-Assembling: A View Combining Electron Spectroscopies and Nanospectroscopies; Probing the Role of Nanoroughness in Contact Mechanics by Atomic Force Microscopy; Structural Modification of Doped and Undoped Nanocrystalline TiO2 by Temperature-Resolved XRPD ; Session 3 - Nanomanufacturing and Tools Patterned 2D and 3D Assemblies of Nanoparticles on Molecular Printboards Sub-Wavelength Texturing for Solar Cells Using Interferometric Lithography ; Some Investigations on Gallium Arsenide MEMS. Simulation of Microstructure Shapes ; Session 4 - Theory, Modelling and Simulation; Dependence of Adhesion and Reflection on Orientation in Nanocluster Deposition; Many-Scale Simulation of ABS/PC Blends for the Automotive Industry ; Molecular Dynamics Simulation of Organic Molecules Distorted Conformation in Zeolites ; Session 5 - R&D Advances in Devices and Applications Nanotubes Based Composites for Energy Storage in Supercapacitors Nanocrystals in High-k Dielectric Stacks for Non-Volatile Memory Applications; Simulation of the Growth of Copper Films for Micro and Nano-Electronics; Industrial Ink-Jet Application of Nano-Sized Ceramic Inks ; Evolution of Pt Nanoclusters Morphology on PEMFC Electrode due to Methanol Oxidation Reaction Studied by Electron Microscopy and Synchrotron Grazing Incidence X-Ray Diffraction; Nanostructured Films of Polyphthalocyanines for Sensor Applications ; LGS and LGN Microresonators: Applications to High Temperature Nanobalances Humidity Sensors Based on Nanostructured Materials |
| Record Nr. | UNINA-9910453321003321 |
| Stafa-Zuerich : , : Trans Tech Publications Limited on behalf of Techna Group, , [2006] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Disclosing materials at the nanoscale : proceedings of the International Symposium "Disclosing Materials at the Nanoscale" of CIMTEC 2006 - 11th International Ceramics Congress and 4th Forum on New Materials, held in Acireale, Sicily, Italy on June 4-9, 2006 / / edited by P. Vincenzini, World Academy of Ceramics and National Research Council, Italy, G. Marletta, University of Catania, Italy
| Disclosing materials at the nanoscale : proceedings of the International Symposium "Disclosing Materials at the Nanoscale" of CIMTEC 2006 - 11th International Ceramics Congress and 4th Forum on New Materials, held in Acireale, Sicily, Italy on June 4-9, 2006 / / edited by P. Vincenzini, World Academy of Ceramics and National Research Council, Italy, G. Marletta, University of Catania, Italy |
| Pubbl/distr/stampa | Stafa-Zuerich : , : Trans Tech Publications Limited on behalf of Techna Group, , [2006] |
| Descrizione fisica | 1 online resource (220 p.) |
| Disciplina | 220 |
| Altri autori (Persone) |
VincenziniP
MarlettaG |
| Collana | Advances in science and technology |
| Soggetto topico |
Nanoelectromechanical systems
Nanostructured materials |
| ISBN | 3-03813-099-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Disclosing Materials at the Nanoscale; Committee; Preface; Table of Contents; Session 1 - Synthesis, Functionalization and Properties of Nanomaterials; Direct Synthesis of Tungsten Oxide Nanowires on Microscope Cover Glass; Electrochemical Control of the Magnetic Properties of Co and CoCu/Co Nanowires; In Situ Observation of Quantized Growth of Titanium Silicide in Ultra High Vacuum Transmission Electron Microscope (UHV-TEM); Nanocrystalline TiO2 for Solar Cells and Lithium Batteries
Synthesis and Characterization of Mesostructured Silicas and Gold Frameworks as Active Matrices for Biomolecule EncapsulationSynthesis and Cathodoluminescence Study of Well-Aligned Planar-Tip and Tapered-Tip ZnO Nanorods; Self-Assembled Low-Resistivity NiSi Nanowire Arrays on Epitaxial Si0.7Ge0.3 on (001)Si; Preparation and Cathodoluminescence Properties of Ga-Doped ZnS Nanowalls; Nanoparticles of La(1-x)SrxMnO3 (x = 0.33, 0.20) Assembled into Hollow Nanostructures for Solid Oxide Fuel Cells; Preparation of SiC Nanofibers by Using the Polymer Blend Technique Investigation on the Reinforcement of Multi-Walled Carbon Nanotubes on Alumina MatrixTemplate Synthesis of Nanostructured Carbons; Characterization of Fullerene / TriA-PI Composites; Session 2 - Nanoscale Characterization and Techniques; Carbon-Based and Other Nanostructures Obtained via Cluster-Assembling: A View Combining Electron Spectroscopies and Nanospectroscopies; Probing the Role of Nanoroughness in Contact Mechanics by Atomic Force Microscopy; Structural Modification of Doped and Undoped Nanocrystalline TiO2 by Temperature-Resolved XRPD ; Session 3 - Nanomanufacturing and Tools Patterned 2D and 3D Assemblies of Nanoparticles on Molecular Printboards Sub-Wavelength Texturing for Solar Cells Using Interferometric Lithography ; Some Investigations on Gallium Arsenide MEMS. Simulation of Microstructure Shapes ; Session 4 - Theory, Modelling and Simulation; Dependence of Adhesion and Reflection on Orientation in Nanocluster Deposition; Many-Scale Simulation of ABS/PC Blends for the Automotive Industry ; Molecular Dynamics Simulation of Organic Molecules Distorted Conformation in Zeolites ; Session 5 - R&D Advances in Devices and Applications Nanotubes Based Composites for Energy Storage in Supercapacitors Nanocrystals in High-k Dielectric Stacks for Non-Volatile Memory Applications; Simulation of the Growth of Copper Films for Micro and Nano-Electronics; Industrial Ink-Jet Application of Nano-Sized Ceramic Inks ; Evolution of Pt Nanoclusters Morphology on PEMFC Electrode due to Methanol Oxidation Reaction Studied by Electron Microscopy and Synchrotron Grazing Incidence X-Ray Diffraction; Nanostructured Films of Polyphthalocyanines for Sensor Applications ; LGS and LGN Microresonators: Applications to High Temperature Nanobalances Humidity Sensors Based on Nanostructured Materials |
| Record Nr. | UNINA-9910790874303321 |
| Stafa-Zuerich : , : Trans Tech Publications Limited on behalf of Techna Group, , [2006] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Disclosing materials at the nanoscale : proceedings of the International Symposium "Disclosing Materials at the Nanoscale" of CIMTEC 2006 - 11th International Ceramics Congress and 4th Forum on New Materials, held in Acireale, Sicily, Italy on June 4-9, 2006 / / edited by P. Vincenzini, World Academy of Ceramics and National Research Council, Italy, G. Marletta, University of Catania, Italy
| Disclosing materials at the nanoscale : proceedings of the International Symposium "Disclosing Materials at the Nanoscale" of CIMTEC 2006 - 11th International Ceramics Congress and 4th Forum on New Materials, held in Acireale, Sicily, Italy on June 4-9, 2006 / / edited by P. Vincenzini, World Academy of Ceramics and National Research Council, Italy, G. Marletta, University of Catania, Italy |
| Pubbl/distr/stampa | Stafa-Zuerich : , : Trans Tech Publications Limited on behalf of Techna Group, , [2006] |
| Descrizione fisica | 1 online resource (220 p.) |
| Disciplina | 220 |
| Altri autori (Persone) |
VincenziniP
MarlettaG |
| Collana | Advances in science and technology |
| Soggetto topico |
Nanoelectromechanical systems
Nanostructured materials |
| ISBN | 3-03813-099-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Disclosing Materials at the Nanoscale; Committee; Preface; Table of Contents; Session 1 - Synthesis, Functionalization and Properties of Nanomaterials; Direct Synthesis of Tungsten Oxide Nanowires on Microscope Cover Glass; Electrochemical Control of the Magnetic Properties of Co and CoCu/Co Nanowires; In Situ Observation of Quantized Growth of Titanium Silicide in Ultra High Vacuum Transmission Electron Microscope (UHV-TEM); Nanocrystalline TiO2 for Solar Cells and Lithium Batteries
Synthesis and Characterization of Mesostructured Silicas and Gold Frameworks as Active Matrices for Biomolecule EncapsulationSynthesis and Cathodoluminescence Study of Well-Aligned Planar-Tip and Tapered-Tip ZnO Nanorods; Self-Assembled Low-Resistivity NiSi Nanowire Arrays on Epitaxial Si0.7Ge0.3 on (001)Si; Preparation and Cathodoluminescence Properties of Ga-Doped ZnS Nanowalls; Nanoparticles of La(1-x)SrxMnO3 (x = 0.33, 0.20) Assembled into Hollow Nanostructures for Solid Oxide Fuel Cells; Preparation of SiC Nanofibers by Using the Polymer Blend Technique Investigation on the Reinforcement of Multi-Walled Carbon Nanotubes on Alumina MatrixTemplate Synthesis of Nanostructured Carbons; Characterization of Fullerene / TriA-PI Composites; Session 2 - Nanoscale Characterization and Techniques; Carbon-Based and Other Nanostructures Obtained via Cluster-Assembling: A View Combining Electron Spectroscopies and Nanospectroscopies; Probing the Role of Nanoroughness in Contact Mechanics by Atomic Force Microscopy; Structural Modification of Doped and Undoped Nanocrystalline TiO2 by Temperature-Resolved XRPD ; Session 3 - Nanomanufacturing and Tools Patterned 2D and 3D Assemblies of Nanoparticles on Molecular Printboards Sub-Wavelength Texturing for Solar Cells Using Interferometric Lithography ; Some Investigations on Gallium Arsenide MEMS. Simulation of Microstructure Shapes ; Session 4 - Theory, Modelling and Simulation; Dependence of Adhesion and Reflection on Orientation in Nanocluster Deposition; Many-Scale Simulation of ABS/PC Blends for the Automotive Industry ; Molecular Dynamics Simulation of Organic Molecules Distorted Conformation in Zeolites ; Session 5 - R&D Advances in Devices and Applications Nanotubes Based Composites for Energy Storage in Supercapacitors Nanocrystals in High-k Dielectric Stacks for Non-Volatile Memory Applications; Simulation of the Growth of Copper Films for Micro and Nano-Electronics; Industrial Ink-Jet Application of Nano-Sized Ceramic Inks ; Evolution of Pt Nanoclusters Morphology on PEMFC Electrode due to Methanol Oxidation Reaction Studied by Electron Microscopy and Synchrotron Grazing Incidence X-Ray Diffraction; Nanostructured Films of Polyphthalocyanines for Sensor Applications ; LGS and LGN Microresonators: Applications to High Temperature Nanobalances Humidity Sensors Based on Nanostructured Materials |
| Record Nr. | UNINA-9910823147003321 |
| Stafa-Zuerich : , : Trans Tech Publications Limited on behalf of Techna Group, , [2006] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Emerging nanoelectronic devices / / An Chen, Globalfoundries, USA [and three others]
| Emerging nanoelectronic devices / / An Chen, Globalfoundries, USA [and three others] |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Chichester, West Sussex, United Kingdom : , : John Wiley & Sons Inc., , 2015 |
| Descrizione fisica | 1 online resource (573 pages) : illustrations (some color) |
| Disciplina | 621.381 |
| Soggetto topico |
Nanoelectronics
Nanoelectromechanical systems Nanostructured materials |
| ISBN |
1-118-95826-8
1-118-95825-X 1-322-31759-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Title Page -- Copyright -- Dedication -- Preface -- List of Contributors -- Acronyms -- Part One: Introduction -- Chapter 1: The Nanoelectronics Roadmap -- 1.1 Introduction -- 1.2 Technology Scaling: Impact and Issues -- 1.3 Technology Scaling: Scaling Limits of Charge-based Devices -- 1.4 The International Technology Roadmap for Semiconductors -- 1.5 ITRS Emerging Research Devices International Technology Working Group -- 1.6 Guiding Performance Criteria -- 1.7 Selection of Nanodevices as Technology Entries -- 1.8 Perspectives -- References -- Chapter 2: What Constitutes a Nanoswitch? A Perspective -- 2.1 The Search for a Better Switch -- 2.2 Complementary Metal Oxide Semiconductor Switch: Why it Shows Gain -- 2.3 Switch Based on Magnetic Tunnel Junctions: Would it Show Gain? -- 2.4 Giant Spin Hall Effect: A Route to Gain -- 2.5 Other Possibilities for Switches with Gain -- 2.6 What do Alternative Switches Have to Offer? -- 2.7 Perspective -- 2.8 Summary -- Acknowledgments -- References -- Part Two: Nanoelectronic Memories -- Chapter 3: Memory Technologies: Status and Perspectives -- 3.1 Introduction: Baseline Memory Technologies -- 3.2 Essential Physics of Charge-based Memory -- 3.3 Dynamic Random Access Memory -- 3.4 Flash Memory -- 3.5 Static Random Access Memory -- 3.6 Summary and Perspective -- Appendix: Memory Array Interconnects -- Acknowledgments -- References -- Chapter 4: Spin Transfer Torque Random Access Memory -- 4.1 Chapter Overview -- 4.2 Spin Transfer Torque -- 4.3 STT-RAM Operation -- 4.4 STT-RAM with Perpendicular Anisotropy -- 4.5 Stack and Material Engineering for Jc Reduction -- 4.6 Ultra-Fast Switching of MTJs -- 4.7 Spin-Orbit Torques for Memory Application -- 4.8 Current Demonstrations for STT-RAM -- 4.9 Summary and Perspectives -- References -- Chapter 5: Phase Change Memory -- 5.1 Introduction.
5.2 Device Operation -- 5.3 Material Properties -- 5.4 Device and Material Scaling to the Nanometer Size -- 5.5 Multi-Bit Operation and 3D Integration -- 5.6 Applications -- 5.7 Future Outlook -- 5.8 Summary -- Acknowledgments -- References -- Chapter 6: Ferroelectric FET Memory -- 6.1 Introduction -- 6.2 Ferroelectric FET for Flash Memory Application -- 6.3 Ferroelectric FET for SRAM Application -- 6.4 System Consideration: SSD System with Fe-NAND Flash Memory -- 6.5 Perspectives and Summary -- References -- Chapter 7: Nano-Electro-Mechanical (NEM) Memory Devices -- 7.1 Introduction and Rationale for a Memory Based on NEM Switch -- 7.2 NEM Relay and Capacitor Memories -- 7.3 NEM-FET Memory -- 7.4 Carbon-based NEM Memories -- 7.5 Opportunities and Challenges for NEM Memories -- References -- Chapter 8: Redox-based Resistive Memory -- 8.1 Introduction -- 8.2 Physical Fundamentals of Redox Memories -- 8.3 Electrochemical Metallization Memory Cells -- 8.4 Valence Change Memory Cells -- 8.5 Performance -- 8.6 Summary -- References -- Chapter 9: Electronic Effect Resistive Switching Memories -- 9.1 Introduction -- 9.2 Charge Injection and Trapping -- 9.3 Mott Transition -- 9.4 Ferroelectric Resistive Switching -- 9.5 Perspectives -- 9.6 Summary -- References -- Chapter 10: Macromolecular Memory -- 10.1 Chapter Overview -- 10.2 Macromolecules -- 10.3 Elementary Physical Chemistry of Macromolecular Memory -- 10.4 Classes of Macromolecular Memory Materials and Their Performance -- 10.5 Perspectives -- 10.6 Summary -- Acknowledgments -- References -- Chapter 11: Molecular Transistors -- 11.1 Introduction -- 11.2 Experimental Approaches -- 11.3 Molecular Transistors -- 11.4 Molecular Design -- 11.5 Perspectives -- Acknowledgments -- References -- Chapter 12: Memory Select Devices -- 12.1 Introduction -- 12.2 Crossbar Array and Memory Select Devices. 12.3 Memory Select Device Options -- 12.4 Challenges of Memory Select Devices -- 12.5 Summary -- References -- Chapter 13: Emerging Memory Devices: Assessment and Benchmarking -- 13.1 Introduction -- 13.2 Common Emerging Memory Terminology and Metrics -- 13.3 Redox RAM -- 13.4 Emerging Ferroelectric Memories -- 13.5 Mott Memory -- 13.6 Macromolecular Memory -- 13.7 Carbon-based Resistive Switching Memory -- 13.8 Molecular Memory -- 13.9 Assessment and Benchmarking -- 13.10 Summary and Conclusions -- Acknowledgments -- References -- Part Three: Nanoelectronic Logic and Information Processing -- Chapter 14: Re-Invention of FET -- 14.1 Introduction -- 14.2 Historical and Future Trend of MOSFETs -- 14.3 Near-term Solutions -- 14.4 Long-term Solutions -- 14.5 Summary -- References -- Chapter 15: Graphene Electronics -- 15.1 Introduction -- 15.2 Properties of Graphene -- 15.3 Graphene MOSFETs for Mainstream Logic and RF Applications -- 15.4 Graphene MOSFETs for Nonmainstream Applications -- 15.5 Graphene NonMOSFET Transistors -- 15.6 Perspectives -- Acknowledgment -- References -- Chapter 16: Carbon Nanotube Electronics -- 16.1 Carbon Nanotubes - The Ideal Transistor Channel -- 16.2 Operation of the CNTFET -- 16.3 Important Aspects of CNTFETs -- 16.4 Scaling CNTFETs to the Sub-10 Nanometer Regime -- 16.5 Material Considerations -- 16.6 Perspective -- 16.7 Conclusion -- References -- Chapter 17: Spintronics -- 17.1 Introduction -- 17.2 Spin Transistors -- 17.3 Magnetic Logic Circuits -- 17.4 Summary -- References -- Chapter 18: NEMS Switch Technology -- 18.1 Electromechanical Switches for Digital Logic -- 18.2 Actuation Mechanisms -- 18.3 Electrostatic Switch Designs -- 18.4 Reliability and Scalability -- References -- Chapter 19: Atomic Switch -- 19.1 Chapter Overview -- 19.2 Historical Background of the Atomic Switch. 19.3 Fundamentals of Atomic Switches -- 19.4 Various Atomic Switches -- 19.5 Perspectives -- References -- Chapter 20: ITRS Assessment and Benchmarking of Emerging Logic Devices -- 20.1 Introduction -- 20.2 Overview of the ITRS Roadmap for Emerging Research Logic Devices -- 20.3 Recent Results for Selected Emerging Devices -- 20.4 Perspective -- 20.5 Summary -- Acknowledgments -- References -- Part Four: Concepts for Emerging Architectures -- Chapter 21: Nanomagnet Logic: A Magnetic Implementation of Quantum-dot Cellular Automata -- 21.1 Introduction -- 21.2 Technology Background -- 21.3 NML Circuit Design Based on Conventional, Boolean Logic Gates -- 21.4 Alternative Circuit Design Techniques and Architectures -- 21.5 Retrospective, Future Challenges, and Future Research Directions -- References -- Chapter 22: Explorations in Morphic Architectures -- 22.1 Introduction -- 22.2 Neuromorphic Architectures -- 22.3 Cellular Automata Architectures -- 22.4 Taxonomy of Computational Ability of Architectures -- 22.5 Summary -- References -- Chapter 23: Design Considerations for a Computational Architecture of Human Cognition -- 23.1 Introduction -- 23.2 Features of Biological Computation -- 23.3 Evolution of Behavior as a Basis for Cognitive Architecture Design -- 23.4 Considerations for a Cognitive Architecture -- 23.5 Emergent Cognition -- 23.6 Perspectives -- References -- Chapter 24: Alternative Architectures for NonBoolean Information Processing Systems -- 24.1 Introduction -- 24.2 Hierarchical Associative Memory Models -- 24.3 N-Tree Model -- 24.4 Summary and Conclusion -- Acknowledgments -- References -- Chapter 25: Storage Class Memory -- 25.1 Introduction -- 25.2 Traditional Storage: HDD and Flash Solid-state Drives -- 25.3 What is Storage Class Memory? -- 25.4 Target Specifications for SCM -- 25.5 Device Candidates for SCM. 25.6 Architectural Issues in SCM -- 25.7 Conclusions -- References -- Part Five: Summary, Conclusions, and Outlook for Nanoelectronic Devices -- Chapter 26: Outlook for Nanoelectronic Devices -- 26.1 Introduction -- 26.2 Quantitative Logic Benchmarking for Beyond CMOS Technologies -- 26.3 Survey-based Critical Assessment of Emerging Devices -- 26.4 Retrospective Assessment of ERD Tracked Technologies -- References -- Index -- End User License Agreement. |
| Record Nr. | UNINA-9910208958203321 |
| Chichester, West Sussex, United Kingdom : , : John Wiley & Sons Inc., , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Emerging nanoelectronic devices / / An Chen, Globalfoundries, USA [and three others]
| Emerging nanoelectronic devices / / An Chen, Globalfoundries, USA [and three others] |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Chichester, West Sussex, United Kingdom : , : John Wiley & Sons Inc., , 2015 |
| Descrizione fisica | 1 online resource (573 pages) : illustrations (some color) |
| Disciplina | 621.381 |
| Soggetto topico |
Nanoelectronics
Nanoelectromechanical systems Nanostructured materials |
| ISBN |
1-118-95826-8
1-118-95825-X 1-322-31759-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Title Page -- Copyright -- Dedication -- Preface -- List of Contributors -- Acronyms -- Part One: Introduction -- Chapter 1: The Nanoelectronics Roadmap -- 1.1 Introduction -- 1.2 Technology Scaling: Impact and Issues -- 1.3 Technology Scaling: Scaling Limits of Charge-based Devices -- 1.4 The International Technology Roadmap for Semiconductors -- 1.5 ITRS Emerging Research Devices International Technology Working Group -- 1.6 Guiding Performance Criteria -- 1.7 Selection of Nanodevices as Technology Entries -- 1.8 Perspectives -- References -- Chapter 2: What Constitutes a Nanoswitch? A Perspective -- 2.1 The Search for a Better Switch -- 2.2 Complementary Metal Oxide Semiconductor Switch: Why it Shows Gain -- 2.3 Switch Based on Magnetic Tunnel Junctions: Would it Show Gain? -- 2.4 Giant Spin Hall Effect: A Route to Gain -- 2.5 Other Possibilities for Switches with Gain -- 2.6 What do Alternative Switches Have to Offer? -- 2.7 Perspective -- 2.8 Summary -- Acknowledgments -- References -- Part Two: Nanoelectronic Memories -- Chapter 3: Memory Technologies: Status and Perspectives -- 3.1 Introduction: Baseline Memory Technologies -- 3.2 Essential Physics of Charge-based Memory -- 3.3 Dynamic Random Access Memory -- 3.4 Flash Memory -- 3.5 Static Random Access Memory -- 3.6 Summary and Perspective -- Appendix: Memory Array Interconnects -- Acknowledgments -- References -- Chapter 4: Spin Transfer Torque Random Access Memory -- 4.1 Chapter Overview -- 4.2 Spin Transfer Torque -- 4.3 STT-RAM Operation -- 4.4 STT-RAM with Perpendicular Anisotropy -- 4.5 Stack and Material Engineering for Jc Reduction -- 4.6 Ultra-Fast Switching of MTJs -- 4.7 Spin-Orbit Torques for Memory Application -- 4.8 Current Demonstrations for STT-RAM -- 4.9 Summary and Perspectives -- References -- Chapter 5: Phase Change Memory -- 5.1 Introduction.
5.2 Device Operation -- 5.3 Material Properties -- 5.4 Device and Material Scaling to the Nanometer Size -- 5.5 Multi-Bit Operation and 3D Integration -- 5.6 Applications -- 5.7 Future Outlook -- 5.8 Summary -- Acknowledgments -- References -- Chapter 6: Ferroelectric FET Memory -- 6.1 Introduction -- 6.2 Ferroelectric FET for Flash Memory Application -- 6.3 Ferroelectric FET for SRAM Application -- 6.4 System Consideration: SSD System with Fe-NAND Flash Memory -- 6.5 Perspectives and Summary -- References -- Chapter 7: Nano-Electro-Mechanical (NEM) Memory Devices -- 7.1 Introduction and Rationale for a Memory Based on NEM Switch -- 7.2 NEM Relay and Capacitor Memories -- 7.3 NEM-FET Memory -- 7.4 Carbon-based NEM Memories -- 7.5 Opportunities and Challenges for NEM Memories -- References -- Chapter 8: Redox-based Resistive Memory -- 8.1 Introduction -- 8.2 Physical Fundamentals of Redox Memories -- 8.3 Electrochemical Metallization Memory Cells -- 8.4 Valence Change Memory Cells -- 8.5 Performance -- 8.6 Summary -- References -- Chapter 9: Electronic Effect Resistive Switching Memories -- 9.1 Introduction -- 9.2 Charge Injection and Trapping -- 9.3 Mott Transition -- 9.4 Ferroelectric Resistive Switching -- 9.5 Perspectives -- 9.6 Summary -- References -- Chapter 10: Macromolecular Memory -- 10.1 Chapter Overview -- 10.2 Macromolecules -- 10.3 Elementary Physical Chemistry of Macromolecular Memory -- 10.4 Classes of Macromolecular Memory Materials and Their Performance -- 10.5 Perspectives -- 10.6 Summary -- Acknowledgments -- References -- Chapter 11: Molecular Transistors -- 11.1 Introduction -- 11.2 Experimental Approaches -- 11.3 Molecular Transistors -- 11.4 Molecular Design -- 11.5 Perspectives -- Acknowledgments -- References -- Chapter 12: Memory Select Devices -- 12.1 Introduction -- 12.2 Crossbar Array and Memory Select Devices. 12.3 Memory Select Device Options -- 12.4 Challenges of Memory Select Devices -- 12.5 Summary -- References -- Chapter 13: Emerging Memory Devices: Assessment and Benchmarking -- 13.1 Introduction -- 13.2 Common Emerging Memory Terminology and Metrics -- 13.3 Redox RAM -- 13.4 Emerging Ferroelectric Memories -- 13.5 Mott Memory -- 13.6 Macromolecular Memory -- 13.7 Carbon-based Resistive Switching Memory -- 13.8 Molecular Memory -- 13.9 Assessment and Benchmarking -- 13.10 Summary and Conclusions -- Acknowledgments -- References -- Part Three: Nanoelectronic Logic and Information Processing -- Chapter 14: Re-Invention of FET -- 14.1 Introduction -- 14.2 Historical and Future Trend of MOSFETs -- 14.3 Near-term Solutions -- 14.4 Long-term Solutions -- 14.5 Summary -- References -- Chapter 15: Graphene Electronics -- 15.1 Introduction -- 15.2 Properties of Graphene -- 15.3 Graphene MOSFETs for Mainstream Logic and RF Applications -- 15.4 Graphene MOSFETs for Nonmainstream Applications -- 15.5 Graphene NonMOSFET Transistors -- 15.6 Perspectives -- Acknowledgment -- References -- Chapter 16: Carbon Nanotube Electronics -- 16.1 Carbon Nanotubes - The Ideal Transistor Channel -- 16.2 Operation of the CNTFET -- 16.3 Important Aspects of CNTFETs -- 16.4 Scaling CNTFETs to the Sub-10 Nanometer Regime -- 16.5 Material Considerations -- 16.6 Perspective -- 16.7 Conclusion -- References -- Chapter 17: Spintronics -- 17.1 Introduction -- 17.2 Spin Transistors -- 17.3 Magnetic Logic Circuits -- 17.4 Summary -- References -- Chapter 18: NEMS Switch Technology -- 18.1 Electromechanical Switches for Digital Logic -- 18.2 Actuation Mechanisms -- 18.3 Electrostatic Switch Designs -- 18.4 Reliability and Scalability -- References -- Chapter 19: Atomic Switch -- 19.1 Chapter Overview -- 19.2 Historical Background of the Atomic Switch. 19.3 Fundamentals of Atomic Switches -- 19.4 Various Atomic Switches -- 19.5 Perspectives -- References -- Chapter 20: ITRS Assessment and Benchmarking of Emerging Logic Devices -- 20.1 Introduction -- 20.2 Overview of the ITRS Roadmap for Emerging Research Logic Devices -- 20.3 Recent Results for Selected Emerging Devices -- 20.4 Perspective -- 20.5 Summary -- Acknowledgments -- References -- Part Four: Concepts for Emerging Architectures -- Chapter 21: Nanomagnet Logic: A Magnetic Implementation of Quantum-dot Cellular Automata -- 21.1 Introduction -- 21.2 Technology Background -- 21.3 NML Circuit Design Based on Conventional, Boolean Logic Gates -- 21.4 Alternative Circuit Design Techniques and Architectures -- 21.5 Retrospective, Future Challenges, and Future Research Directions -- References -- Chapter 22: Explorations in Morphic Architectures -- 22.1 Introduction -- 22.2 Neuromorphic Architectures -- 22.3 Cellular Automata Architectures -- 22.4 Taxonomy of Computational Ability of Architectures -- 22.5 Summary -- References -- Chapter 23: Design Considerations for a Computational Architecture of Human Cognition -- 23.1 Introduction -- 23.2 Features of Biological Computation -- 23.3 Evolution of Behavior as a Basis for Cognitive Architecture Design -- 23.4 Considerations for a Cognitive Architecture -- 23.5 Emergent Cognition -- 23.6 Perspectives -- References -- Chapter 24: Alternative Architectures for NonBoolean Information Processing Systems -- 24.1 Introduction -- 24.2 Hierarchical Associative Memory Models -- 24.3 N-Tree Model -- 24.4 Summary and Conclusion -- Acknowledgments -- References -- Chapter 25: Storage Class Memory -- 25.1 Introduction -- 25.2 Traditional Storage: HDD and Flash Solid-state Drives -- 25.3 What is Storage Class Memory? -- 25.4 Target Specifications for SCM -- 25.5 Device Candidates for SCM. 25.6 Architectural Issues in SCM -- 25.7 Conclusions -- References -- Part Five: Summary, Conclusions, and Outlook for Nanoelectronic Devices -- Chapter 26: Outlook for Nanoelectronic Devices -- 26.1 Introduction -- 26.2 Quantitative Logic Benchmarking for Beyond CMOS Technologies -- 26.3 Survey-based Critical Assessment of Emerging Devices -- 26.4 Retrospective Assessment of ERD Tracked Technologies -- References -- Index -- End User License Agreement. |
| Record Nr. | UNINA-9910826903003321 |
| Chichester, West Sussex, United Kingdom : , : John Wiley & Sons Inc., , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Energy autonomous micro and nano systems [[electronic resource] /] / edited by Marc Belleville, Cyril Condemine
| Energy autonomous micro and nano systems [[electronic resource] /] / edited by Marc Belleville, Cyril Condemine |
| Pubbl/distr/stampa | London, : ISTE |
| Descrizione fisica | 1 online resource (394 p.) |
| Disciplina |
620.5
620/.5 |
| Altri autori (Persone) |
BellevilleMarc
CondemineCyril |
| Collana | ISTE |
| Soggetto topico |
Electric power supplies to apparatus
Low voltage systems Direct energy conversion Energy conservation - Equipment and supplies Nanoelectromechanical systems |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-118-56183-X
1-118-58750-2 1-118-58782-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Sensors at the core of building control -- Towards energy-autonomous medical implants -- Energy autonomous systems in aeronautic applications -- Energy harvesting by photovoltaic effect -- Mechanical energy harvesting -- Thermal energy harvesting -- Lithium micro-batteries -- Ultra-low power sensors -- Ultra-low power signal processing in autonomous systems -- Ultra-low power radio frequency communications and protocols -- Energy management in an autonomous microsystem -- Optimizing energy efficiency of sensor networks. |
| Record Nr. | UNINA-9910141501503321 |
| London, : ISTE | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Energy autonomous micro and nano systems [[electronic resource] /] / edited by Marc Belleville, Cyril Condemine
| Energy autonomous micro and nano systems [[electronic resource] /] / edited by Marc Belleville, Cyril Condemine |
| Pubbl/distr/stampa | London, : ISTE |
| Descrizione fisica | 1 online resource (394 p.) |
| Disciplina |
620.5
620/.5 |
| Altri autori (Persone) |
BellevilleMarc
CondemineCyril |
| Collana | ISTE |
| Soggetto topico |
Electric power supplies to apparatus
Low voltage systems Direct energy conversion Energy conservation - Equipment and supplies Nanoelectromechanical systems |
| ISBN |
1-118-56183-X
1-118-58750-2 1-118-58782-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Sensors at the core of building control -- Towards energy-autonomous medical implants -- Energy autonomous systems in aeronautic applications -- Energy harvesting by photovoltaic effect -- Mechanical energy harvesting -- Thermal energy harvesting -- Lithium micro-batteries -- Ultra-low power sensors -- Ultra-low power signal processing in autonomous systems -- Ultra-low power radio frequency communications and protocols -- Energy management in an autonomous microsystem -- Optimizing energy efficiency of sensor networks. |
| Record Nr. | UNINA-9910830474603321 |
| London, : ISTE | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
