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2019 IEEE 14th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) : April 11-14, 2019, Bangkok, Thailand / / Institute of Electrical and Electronics Engineers
| 2019 IEEE 14th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) : April 11-14, 2019, Bangkok, Thailand / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | Piscataway, New Jersey : , : IEEE, , 2019 |
| Descrizione fisica | 1 online resource : illustrations |
| Disciplina | 621.381 |
| Soggetto topico |
Microtechnology
Microelectromechanical systems Nanoelectromechanical systems |
| ISBN | 1-7281-1629-5 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | 2019 IEEE 14th International Conference on Nano/Micro Engineered and Molecular Systems |
| Record Nr. | UNINA-9910389511603321 |
| Piscataway, New Jersey : , : IEEE, , 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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2019 IEEE 14th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) : April 11-14, 2019, Bangkok, Thailand / / Institute of Electrical and Electronics Engineers
| 2019 IEEE 14th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) : April 11-14, 2019, Bangkok, Thailand / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | Piscataway, New Jersey : , : IEEE, , 2019 |
| Descrizione fisica | 1 online resource : illustrations |
| Disciplina | 621.381 |
| Soggetto topico |
Microtechnology
Microelectromechanical systems Nanoelectromechanical systems |
| ISBN | 1-7281-1629-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | 2019 IEEE 14th International Conference on Nano/Micro Engineered and Molecular Systems |
| Record Nr. | UNISA-996574585603316 |
| Piscataway, New Jersey : , : IEEE, , 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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Adhesion aspects in MEMS-NEMS / / edited by S. H. Kim, M. T. Dugger and K. L. Mittal
| Adhesion aspects in MEMS-NEMS / / edited by S. H. Kim, M. T. Dugger and K. L. Mittal |
| Pubbl/distr/stampa | Leiden ; ; Boston : , : Brill |
| Descrizione fisica | 1 online resource (424 p.) |
| Disciplina | 621.381 |
| Altri autori (Persone) |
KimSeong H
DuggerMichael T MittalK. L. <1945-> |
| Soggetto topico |
Microelectromechanical systems
Nanoelectromechanical systems Adhesion Surfaces (Technology) |
| Soggetto genere / forma | Electronic books. |
| ISBN |
0-429-08792-6
1-61583-947-X 90-04-19095-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | pt. 1. Understanding through continuum theory -- pt. 2. Computer simulation of interfaces -- pt. 3. Adhesion and friction measurements -- pt. 4. Adhesion in practical applications -- pt. 5. Adhesion mitigation strategies. |
| Record Nr. | UNINA-9910463021903321 |
| Leiden ; ; Boston : , : Brill | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Adhesion aspects in MEMS-NEMS / / edited by S. H. Kim, M. T. Dugger and K. L. Mittal
| Adhesion aspects in MEMS-NEMS / / edited by S. H. Kim, M. T. Dugger and K. L. Mittal |
| Pubbl/distr/stampa | Leiden ; ; Boston : , : Brill |
| Descrizione fisica | 1 online resource (424 p.) |
| Disciplina | 621.381 |
| Altri autori (Persone) |
KimSeong H
DuggerMichael T MittalK. L. <1945-> |
| Soggetto topico |
Microelectromechanical systems
Nanoelectromechanical systems Adhesion Surfaces (Technology) |
| ISBN |
0-429-08792-6
1-61583-947-X 90-04-19095-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | pt. 1. Understanding through continuum theory -- pt. 2. Computer simulation of interfaces -- pt. 3. Adhesion and friction measurements -- pt. 4. Adhesion in practical applications -- pt. 5. Adhesion mitigation strategies. |
| Record Nr. | UNINA-9910785903303321 |
| Leiden ; ; Boston : , : Brill | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Adhesion aspects in MEMS-NEMS / / edited by S. H. Kim, M. T. Dugger and K. L. Mittal
| Adhesion aspects in MEMS-NEMS / / edited by S. H. Kim, M. T. Dugger and K. L. Mittal |
| Pubbl/distr/stampa | Leiden ; ; Boston : , : Brill |
| Descrizione fisica | 1 online resource (424 p.) |
| Disciplina | 621.381 |
| Altri autori (Persone) |
KimSeong H
DuggerMichael T MittalK. L. <1945-> |
| Soggetto topico |
Microelectromechanical systems
Nanoelectromechanical systems Adhesion Surfaces (Technology) |
| ISBN |
0-429-08792-6
1-61583-947-X 90-04-19095-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | pt. 1. Understanding through continuum theory -- pt. 2. Computer simulation of interfaces -- pt. 3. Adhesion and friction measurements -- pt. 4. Adhesion in practical applications -- pt. 5. Adhesion mitigation strategies. |
| Record Nr. | UNINA-9910807383103321 |
| Leiden ; ; Boston : , : Brill | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Advanced MEMS/NEMS fabrication and sensors / / Zhuoqing Yang, editor
| Advanced MEMS/NEMS fabrication and sensors / / Zhuoqing Yang, editor |
| Pubbl/distr/stampa | Cham, Switzerland : , : Springer, , [2022] |
| Descrizione fisica | 1 online resource (312 pages) |
| Disciplina | 621.381 |
| Soggetto topico |
Microelectromechanical systems
Nanoelectromechanical systems Microfabrication |
| ISBN | 3-030-79749-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910522964803321 |
| Cham, Switzerland : , : Springer, , [2022] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Advances in Communication, Devices and Networking [[electronic resource] ] : Proceedings of ICCDN 2022 / / edited by Sourav Dhar, Dinh-Thuan Do, Samarendra Nath Sur, Chuan-Ming Liu
| Advances in Communication, Devices and Networking [[electronic resource] ] : Proceedings of ICCDN 2022 / / edited by Sourav Dhar, Dinh-Thuan Do, Samarendra Nath Sur, Chuan-Ming Liu |
| Autore | Dhar Sourav |
| Edizione | [1st ed. 2023.] |
| Pubbl/distr/stampa | Singapore : , : Springer Nature Singapore : , : Imprint : Springer, , 2023 |
| Descrizione fisica | 1 online resource (656 pages) |
| Disciplina | 621.382 |
| Altri autori (Persone) |
DoDinh-Thuan
SurSamarendra Nath LiuChuan-Ming |
| Collana | Lecture Notes in Electrical Engineering |
| Soggetto topico |
Telecommunication
Signal processing Artificial intelligence Nanoelectromechanical systems Communications Engineering, Networks Signal, Speech and Image Processing Artificial Intelligence Nanoscale Devices |
| ISBN | 981-9919-83-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | A Low Phase Noise Voltage Controlled Oscillator using Tunable SIW cavity Resonator -- Design and Analysis of an Efficient NovelMultilayer4:1 MUX Using QCA Technique with Reversibility and Stability -- Investigation of Phosphorene's Sensing Behavior Towards SO2F2 and SOF2 Gases: A DFT Study -- RFID Based Student Identification Card Attendance Monitoring System -- Analysis of Channel Grading on Triple Material Double Gate Stack Oxide SON MOSFET -- Design of Audio Codec System based on ARM -- Parameters Optimization of YOLO Algorithm for Vehicle Detection in SMIT Campus -- Textural Analysis of MRI Scan Using Radon Transform -- A Study on Transcontinental Diabetes Datasets Using A Soft-Voting Ensemble Learning Approach -- Advancements in Electronic Healthcare: A Bibliometric Analysis -- Impact of Perceived Social Support on Patient Empowerment: A Study of Online Patient Support Groups -- Interfacing of Industrial Inductive Proximity Sensor with NI DAQ and Speed Measurement. |
| Record Nr. | UNINA-9910734870503321 |
Dhar Sourav
|
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| Singapore : , : Springer Nature Singapore : , : Imprint : Springer, , 2023 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Adventures in Contemporary Electromagnetic Theory [[electronic resource] /] / edited by Tom G. Mackay, Akhlesh Lakhtakia
| Adventures in Contemporary Electromagnetic Theory [[electronic resource] /] / edited by Tom G. Mackay, Akhlesh Lakhtakia |
| Edizione | [1st ed. 2023.] |
| Pubbl/distr/stampa | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2023 |
| Descrizione fisica | 1 online resource (548 pages) |
| Disciplina | 929.374 |
| Soggetto topico |
Electronic circuits
Nanoelectromechanical systems Metamaterials Electronic Circuits and Systems Nanoscale Devices |
| ISBN | 3-031-24617-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction -- 1. Our Werner always brought us joy -- 2. Scalar potentials and applications -- 3. A novel approach to electromagnetic constitutive relations -- 4. On the anatomy of Voigt plane waves -- 5. Electromagnetic radiation by finite-sized electric and magnetic dipoles embedded in homogeneous uniaxial dielectric materials -- 6. Near-field microwave imaging employing measured point-spread functions -- 7. Electromagnetic wave propagation inside rectangular chirowaveguides using the coupled mode method -- 8. On a Steklov spectrum in electromagnetics -- 9. Using boundary conditions with the Ewald–Oseen extinction theorem -- 10. Spatial sampling and interpolation techniques in computational electromagnetics and beyond -- 11. Light-matter interaction at the sub-wavelength scale: Pathways to design nanophotonic devices -- 12. Integrated photonics with near-zero index materials -- 13. Correlated disorder in broadband dielectric multilayered reflectors -- 14. Scattering from reconfigurable metasurfaces and their applications -- 15. Specular reflection and transmission of electromagnetic waves by disordered metasurfaces -- 16. Continuity of field patterns for exceptional surface waves and exceptional compound waves -- 17. Cavity modes and surface plasmon waves coupling on nanostructured surfaces for enhanced sensing and energy applications -- 18. Analysis of diffraction from all-dielectric gratings using entire-domain integralequation techniques -- 19. Rigorous coupled-wave approach and transformation optics -- 20. Mind the gap between theory and experiment -- 21. Theoretical future — Vision 2030. |
| Record Nr. | UNINA-9910736002303321 |
| Cham : , : Springer International Publishing : , : Imprint : Springer, , 2023 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Bio-Inspired Information Pathways [[electronic resource] ] : From Neuroscience to Neurotronics / / edited by Martin Ziegler, Thomas Mussenbrock, Hermann Kohlstedt
| Bio-Inspired Information Pathways [[electronic resource] ] : From Neuroscience to Neurotronics / / edited by Martin Ziegler, Thomas Mussenbrock, Hermann Kohlstedt |
| Edizione | [1st ed. 2024.] |
| Pubbl/distr/stampa | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2024 |
| Descrizione fisica | 1 online resource (XIII, 433 p. 226 illus., 187 illus. in color.) |
| Disciplina | 610.28 |
| Collana | Springer Series on Bio- and Neurosystems |
| Soggetto topico |
Neurotechnology (Bioengineering)
Electronics Nanoelectromechanical systems Neuroengineering Electronics and Microelectronics, Instrumentation Nanoscale Devices |
| ISBN | 3-031-36705-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Matter & Mind Matter -- Neuromorphic circuits with redox-based memristive devices -- Redox-based bi-layer oxide metal memristive devices -- MemFlash – Floating Gate Transistors as Memristors -- Critical discussion of ex situ and in situ TEM measurements of memristive devices -- Modeling and Simulation of of Silver-based Filamentary Memristive Devices -- Bio-inspired, neuromorphic acoustic sensing. |
| Record Nr. | UNINA-9910745584303321 |
| Cham : , : Springer International Publishing : , : Imprint : Springer, , 2024 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Carrier transport in nanoscale MOS transistors / / Hideaki Tsuchiya, Yoshinari Kamakura
| Carrier transport in nanoscale MOS transistors / / Hideaki Tsuchiya, Yoshinari Kamakura |
| Autore | Tsuchiya Hideaki |
| Pubbl/distr/stampa | Singapore : , : Wiley, , 2016 |
| Descrizione fisica | 1 online resource (387 pages) : illustrations |
| Disciplina | 621.38152 |
| Altri autori (Persone) | KamakuraYoshinari |
| Soggetto topico |
Nanoelectromechanical systems
Electron transport Metal oxide semiconductors |
| ISBN |
1-118-87172-3
1-118-87171-5 1-118-87173-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
-- Preface ix -- Acknowledgements xi -- 1 Emerging Technologies 1 -- 1.1 Moore's Law and the Power Crisis 1 -- 1.2 Novel Device Architectures 2 -- 1.3 High Mobility Channel Materials 5 -- 1.4 Two?-Dimensional (2?-D) Materials 7 -- 1.5 Atomistic Modeling 8 -- 2 First?-principles calculations for Si nanostructures 12 -- 2.1 Band structure calculations 12 -- 2.1.1 Si ultrathin?-body structures 12 -- 2.1.2 Si nanowires 17 -- 2.1.3 Strain effects on band structures: From bulk to nanowire 20 -- 2.2 Tunneling current calculations through Si/SiO2/Si structures 31 -- 2.2.1 Atomic models of Si (001)/SiO2 /Si (001) structures 32 -- 2.2.2 Current?-voltage characteristics 33 -- 2.2.3 SiO2 thickness dependences 35 -- 3 Quasi?-ballistic Transport in Si Nanoscale MOSFETs 41 -- 3.1 A picture of quasi?-ballistic transport simulated using quantum?-corrected Monte Carlo simulation 41 -- 3.1.1 Device structure and simulation method 42 -- 3.1.2 Scattering rates for 3?-D electron gas 44 -- 3.1.3 Ballistic transport limit 46 -- 3.1.4 Quasi?-ballistic transport 50 -- 3.1.5 Role of elastic and inelastic phonon scattering 51 -- 3.2 Multi?-sub?-band Monte Carlo simulation considering quantum confinement in inversion layers 55 -- 3.2.1 Scattering Rates for 2?-D Electron Gas 56 -- 3.2.2 Increase in Dac for SOI MOSFETs 58 -- 3.2.3 Simulated electron mobilities in bulk Si and SOI MOSFETs 59 -- 3.2.4 Electrical characteristics of Si DG?-MOSFETs 61 -- 3.3 Extraction of quasi?-ballistic transport parameters in Si DG?-MOSFETs 64 -- 3.3.1 Backscattering coefficient 64 -- 3.3.2 Current drive 66 -- 3.3.3 Gate and drain bias dependences 67 -- 3.4 Quasi?-ballistic transport in Si junctionless transistors 69 -- 3.4.1 Device structure and simulation conditions 70 -- 3.4.2 Influence of SR scattering 71 -- 3.4.3 Influence of II scattering 74 -- 3.4.4 Backscattering coefficient 75 -- 3.5 Quasi?-ballistic transport in GAA?-Si nanowire MOSFETs 76 -- 3.5.1 Device structure and 3DMSB?-MC method 76 -- 3.5.2 Scattering rates for 1?-D electron gas 77.
3.5.3 ID-VG characteristics and backscattering coefficient 79 -- 4 Phonon Transport in Si Nanostructures 85 -- 4.1 Monte Carlo simulation method 87 -- 4.1.1 Phonon dispersion model 87 -- 4.1.2 Particle simulation of phonon transport 88 -- 4.1.3 Free flight and scattering 89 -- 4.2 Simulation of thermal conductivity 91 -- 4.2.1 Thermal conductivity of bulk silicon 91 -- 4.2.2 Thermal conductivity of silicon thin films 94 -- 4.2.3 Thermal conductivity of silicon nanowires 98 -- 4.2.4 Discussion on Boundary scattering effect 100 -- 4.3 Simulation of heat conduction in devices 102 -- 4.3.1 Simulation method 102 -- 4.3.2 Simple 1?-D structure 103 -- 4.3.3 FinFET structure 106 -- 5 Carrier Transport in High?-mobility MOSFETs 112 -- 5.1 Quantum?-corrected MC Simulation of High?-mobility MOSFETs 112 -- 5.1.1 Device Structure and Band Structures of Materials 112 -- 5.1.2 Band Parameters of Si, Ge, and III?-V Semiconductors 114 -- 5.1.3 Polar?-optical Phonon (POP) Scattering in III?-V Semiconductors 115 -- 5.1.4 Advantage of UTB Structure 116 -- 5.1.5 Drive Current of III?-V, Ge and Si n?-MOSFETs 119 -- 5.2 Source?-drain Direct Tunneling in Ultrascaled MOSFETs 124 -- 5.3 Wigner Monte Carlo (WMC) Method 125 -- 5.3.1 Wigner Transport Formalism 126 -- 5.3.2 Relation with Quantum?-corrected MC Method 129 -- 5.3.3 WMC Algorithm 131 -- 5.3.4 Description of Higher?-order Quantized Subbands 133 -- 5.3.5 Application to Resonant?-tunneling Diode 133 -- 5.4 Quantum Transport Simulation of III?-V n?-MOSFETs with Multi?-subband WMC (MSB?-WMC) Method 138 -- 5.4.1 Device Structure 138 -- 5.4.2 POP Scattering Rate for 2?-D Electron Gas 139 -- 5.4.3 ID-VG Characteristics for InGaAs DG?-MOSFETs 139 -- 5.4.4 Channel Length Dependence of SDT Leakage Current 143 -- 5.4.5 Effective Mass Dependence of Subthreshold Current Properties 144 -- 6 Atomistic Simulations of Si, Ge and III?-V Nanowire MOSFETs 151 -- 6.1 Phonon?-limited electron mobility in Si nanowires 151 -- 6.1.1 Band structure calculations 152. 6.1.2 Electron?-phonon interaction 161 -- 6.1.3 Electron mobility 162 -- 6.2 Comparison of phonon?-limited electron mobilities between Si and Ge nanowires 168 -- 6.3 Ballistic performances of Si and InAs nanowire MOSFETs 173 -- 6.3.1 Band structures 174 -- 6.3.2 Top?-of?-the?-barrier model 174 -- 6.3.3 ID-VG characteristics 177 -- 6.3.4 Quantum capacitances 178 -- 6.3.5 Power?-delay?-product 179 -- 6.4 Ballistic performances of InSb, InAs, and GaSb nanowire MOSFETs 181 -- 6.4.1 Band structures 182 -- 6.4.2 ID-VG characteristics 182 -- 6.4.3 Power?-delay?-product 186 -- Appendix A: Atomistic Poisson equation 187 -- Appendix B: Analytical expressions of electron?-phonon interaction Hamiltonian matrices 188 -- 7 2?-D Materials and Devices 191 -- 7.1 2?-D Materials 191 -- 7.1.1 Fundamental Properties of Graphene, Silicene and Germanene 192 -- 7.1.2 Features of 2?-D Materials as an FET Channel 197 -- 7.2 Graphene Nanostructures with a Bandgap 198 -- 7.2.1 Armchair?-edged Graphene Nanoribbons (A?-GNRs) 199 -- 7.2.2 Relaxation Effects of Edge Atoms 203 -- 7.2.3 Electrical Properties of A?-GNR?-FETs Under Ballistic Transport 205 -- 7.2.4 Bilayer Graphenes (BLGs) 209 -- 7.2.5 Graphene Nanomeshes (GNMs) 214 -- 7.3 Influence of Bandgap Opening on Ballistic Electron Transport in BLG and A?-GNR?-MOSFETs 215 -- 7.3.1 Small Bandgap Regime 217 -- 7.3.2 Large Bandgap Regime 219 -- 7.4 Silicene, Germanene and Graphene Nanoribbons 221 -- 7.4.1 Bandgap vs Ribbon Width 222 -- 7.4.2 Comparison of Band Structures 222 -- 7.5 Ballistic MOSFETs with Silicene, Germanene and Graphene nanoribbons 223 -- 7.5.1 ID-VG Characteristics 223 -- 7.5.2 Quantum Capacitances 224 -- 7.5.3 Channel Charge Density and Average Electron Velocity 225 -- 7.5.4 Source?-drain Direct Tunneling (SDT) 226 -- 7.6 Electron Mobility Calculation for Graphene on Substrates 228 -- 7.6.1 Band Structure 229 -- 7.6.2 Scattering Mechanisms 229 -- 7.6.3 Carrier Degeneracy 231 -- 7.6.4 Electron Mobility Considering Surface Optical Phonon Scattering of Substrates 232. 7.6.5 Electron Mobility Considering Charged Impurity Scattering 234 -- 7.7 Germanane MOSFETs 236 -- 7.7.1 Atomic Model for Germanane Nanoribbon Structure 237 -- 7.7.2 Band Structure and Electron Effective Mass 238 -- 7.7.3 Electron Mobility 240 -- Appendix A: Density?-of?-states for Carriers in Graphene 242 -- References 242 -- Index 247. |
| Record Nr. | UNINA-9910166635603321 |
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Tsuchiya Hideaki
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| Singapore : , : Wiley, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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