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Nonvolatile memory technologies with emphasis on Flash : a comprehensive guide to understanding and using NVM devices / / edited by Joe E. Brewer, Manzur Gill
Nonvolatile memory technologies with emphasis on Flash : a comprehensive guide to understanding and using NVM devices / / edited by Joe E. Brewer, Manzur Gill
Pubbl/distr/stampa Piscataway, New Jersey : , : IEEE Press, , c2008
Descrizione fisica 1 online resource (787 p.)
Disciplina 004.5
006.786
Altri autori (Persone) BrewerJoe (Joe E.)
GillManzur
Collana IEEE Press series on microelectronic systems
Soggetto topico Flash memories (Computers)
Semiconductor storage devices
ISBN 1-118-21162-6
1-281-22155-4
9786611221553
0-470-18135-4
0-470-18134-6
Classificazione ST 175
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Introduction to nonvolatile memory / Joe E. Brewer -- Flash memory applications / Gary Forni ... [et. al] -- Memory circuit technologies / Giulio G. Marotta, Giovanni Naso, Giuseppe Savarese -- Physics of flash memories / J. Van Houdt ... [et. al] -- Nor flash stacked and split-gate memory technology / Stephan N. Keeney, Manzur Gill, David Sweetman -- Nand flash memory technology / Koji Sakui, Kang-Deog Suh -- Dinor flash memory technology / Moriyoshi Nakashima, Natsuo Ajika -- P-channel flash memory technology / Frank Ruei-Ling Lin, Charles Ching-Hjsiang Hsu -- Embeddded flash memory / Chang-Kiang (Clinton) Kuo-Min Chang -- Tunnel dielectrics for scaled flash memory cells / T. P. Ma -- Flash memory reliability / Jian Justin Chen, Neal R. Mielke, Chenming Calvin Hu -- Multilevel cell digital memories / Albert Fazio, Mark Bauer -- Alternative memory technologies / Gary F. Derbenwick, Joe E. Brewer.
Record Nr. UNINA-9910144575403321
Piscataway, New Jersey : , : IEEE Press, , c2008
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Nonvolatile memory technologies with emphasis on Flash : a comprehensive guide to understanding and using NVM devices / / edited by Joe E. Brewer, Manzur Gill
Nonvolatile memory technologies with emphasis on Flash : a comprehensive guide to understanding and using NVM devices / / edited by Joe E. Brewer, Manzur Gill
Pubbl/distr/stampa Piscataway, New Jersey : , : IEEE Press, , c2008
Descrizione fisica 1 online resource (787 p.)
Disciplina 004.5
006.786
Altri autori (Persone) BrewerJoe (Joe E.)
GillManzur
Collana IEEE Press series on microelectronic systems
Soggetto topico Flash memories (Computers)
Semiconductor storage devices
ISBN 1-118-21162-6
1-281-22155-4
9786611221553
0-470-18135-4
0-470-18134-6
Classificazione ST 175
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Introduction to nonvolatile memory / Joe E. Brewer -- Flash memory applications / Gary Forni ... [et. al] -- Memory circuit technologies / Giulio G. Marotta, Giovanni Naso, Giuseppe Savarese -- Physics of flash memories / J. Van Houdt ... [et. al] -- Nor flash stacked and split-gate memory technology / Stephan N. Keeney, Manzur Gill, David Sweetman -- Nand flash memory technology / Koji Sakui, Kang-Deog Suh -- Dinor flash memory technology / Moriyoshi Nakashima, Natsuo Ajika -- P-channel flash memory technology / Frank Ruei-Ling Lin, Charles Ching-Hjsiang Hsu -- Embeddded flash memory / Chang-Kiang (Clinton) Kuo-Min Chang -- Tunnel dielectrics for scaled flash memory cells / T. P. Ma -- Flash memory reliability / Jian Justin Chen, Neal R. Mielke, Chenming Calvin Hu -- Multilevel cell digital memories / Albert Fazio, Mark Bauer -- Alternative memory technologies / Gary F. Derbenwick, Joe E. Brewer.
Record Nr. UNISA-996215452403316
Piscataway, New Jersey : , : IEEE Press, , c2008
Materiale a stampa
Lo trovi qui: Univ. di Salerno
Opac: Controlla la disponibilità qui
Nonvolatile memory technologies with emphasis on Flash : a comprehensive guide to understanding and using NVM devices / / edited by Joe E. Brewer, Manzur Gill
Nonvolatile memory technologies with emphasis on Flash : a comprehensive guide to understanding and using NVM devices / / edited by Joe E. Brewer, Manzur Gill
Pubbl/distr/stampa Piscataway, New Jersey : , : IEEE Press, , c2008
Descrizione fisica 1 online resource (787 p.)
Disciplina 004.5
006.786
Altri autori (Persone) BrewerJoe (Joe E.)
GillManzur
Collana IEEE Press series on microelectronic systems
Soggetto topico Flash memories (Computers)
Semiconductor storage devices
ISBN 1-118-21162-6
1-281-22155-4
9786611221553
0-470-18135-4
0-470-18134-6
Classificazione ST 175
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Introduction to nonvolatile memory / Joe E. Brewer -- Flash memory applications / Gary Forni ... [et. al] -- Memory circuit technologies / Giulio G. Marotta, Giovanni Naso, Giuseppe Savarese -- Physics of flash memories / J. Van Houdt ... [et. al] -- Nor flash stacked and split-gate memory technology / Stephan N. Keeney, Manzur Gill, David Sweetman -- Nand flash memory technology / Koji Sakui, Kang-Deog Suh -- Dinor flash memory technology / Moriyoshi Nakashima, Natsuo Ajika -- P-channel flash memory technology / Frank Ruei-Ling Lin, Charles Ching-Hjsiang Hsu -- Embeddded flash memory / Chang-Kiang (Clinton) Kuo-Min Chang -- Tunnel dielectrics for scaled flash memory cells / T. P. Ma -- Flash memory reliability / Jian Justin Chen, Neal R. Mielke, Chenming Calvin Hu -- Multilevel cell digital memories / Albert Fazio, Mark Bauer -- Alternative memory technologies / Gary F. Derbenwick, Joe E. Brewer.
Record Nr. UNINA-9910830305203321
Piscataway, New Jersey : , : IEEE Press, , c2008
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
NVMSA 2018 : 7th IEEE Non-Volatile Memory Systems and Applications Symposium : proceedings : 28-31 August 2018, Hakodate, Japan / / IEEE Computer Society
NVMSA 2018 : 7th IEEE Non-Volatile Memory Systems and Applications Symposium : proceedings : 28-31 August 2018, Hakodate, Japan / / IEEE Computer Society
Pubbl/distr/stampa Los Alamitos, California : , : IEEE Computer Society, , 2018
Descrizione fisica 1 online resource (124 pages)
Disciplina 005.435
Soggetto topico Flash memories (Computers)
Semiconductor storage devices
ISBN 1-5386-7403-3
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISA-996280536803316
Los Alamitos, California : , : IEEE Computer Society, , 2018
Materiale a stampa
Lo trovi qui: Univ. di Salerno
Opac: Controlla la disponibilità qui
NVMSA 2018 : 7th IEEE Non-Volatile Memory Systems and Applications Symposium : proceedings : 28-31 August 2018, Hakodate, Japan / / IEEE Computer Society
NVMSA 2018 : 7th IEEE Non-Volatile Memory Systems and Applications Symposium : proceedings : 28-31 August 2018, Hakodate, Japan / / IEEE Computer Society
Pubbl/distr/stampa Los Alamitos, California : , : IEEE Computer Society, , 2018
Descrizione fisica 1 online resource (124 pages)
Disciplina 005.435
Soggetto topico Flash memories (Computers)
Semiconductor storage devices
ISBN 1-5386-7403-3
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910294555803321
Los Alamitos, California : , : IEEE Computer Society, , 2018
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Seventh biennial IEEE Nonvolatile Memory Technology Conference : proceedings : 1998 conference : June 22-24, 1998, Albuquerque, NM, USA
Seventh biennial IEEE Nonvolatile Memory Technology Conference : proceedings : 1998 conference : June 22-24, 1998, Albuquerque, NM, USA
Pubbl/distr/stampa [Place of publication not identified], : IEEE, 1998
Disciplina 621.39/732
Soggetto topico Semiconductor storage devices
Magnetic memory (Computers)
Flash memories (Computers)
Electrical & Computer Engineering
Engineering & Applied Sciences
Electrical Engineering
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISA-996212594403316
[Place of publication not identified], : IEEE, 1998
Materiale a stampa
Lo trovi qui: Univ. di Salerno
Opac: Controlla la disponibilità qui
Seventh biennial IEEE Nonvolatile Memory Technology Conference : proceedings : 1998 conference : June 22-24, 1998, Albuquerque, NM, USA
Seventh biennial IEEE Nonvolatile Memory Technology Conference : proceedings : 1998 conference : June 22-24, 1998, Albuquerque, NM, USA
Pubbl/distr/stampa [Place of publication not identified], : IEEE, 1998
Disciplina 621.39/732
Soggetto topico Semiconductor storage devices
Magnetic memory (Computers)
Flash memories (Computers)
Electrical & Computer Engineering
Engineering & Applied Sciences
Electrical Engineering
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910872603703321
[Place of publication not identified], : IEEE, 1998
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Silicon non-volatile memories [[electronic resource] ] : paths of innovation / / Barbara De Salvo
Silicon non-volatile memories [[electronic resource] ] : paths of innovation / / Barbara De Salvo
Autore De Salvo Barbara
Pubbl/distr/stampa London, UK, : ISTE
Descrizione fisica 1 online resource (248 p.)
Disciplina 621.381
621.39/732
Collana ISTE
Soggetto topico Semiconductor storage devices
Flash memories (Computers)
Soggetto genere / forma Electronic books.
ISBN 1-282-69013-2
9786612690136
0-470-61181-2
0-470-61039-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Silicon Non-Volatile Memories; Table of Contents; Preface; Chapter 1. Introduction; Chapter 2. Semiconductor Industry Overview; 2.1. The cyclical semiconductor market; 2.2. The leading IC companies; 2.3. The world IC market distribution; 2.4. Semiconductor sales by IC devices; 2.5. The semiconductor memory market; 2.6. The impressive price decline of IC circuits; 2.7. Moore's Law, the ITRS and their economic impacts; 2.8. Exponential growth of manufacturing and R&D costs; 2.9. The structural evolution of the semiconductor industry; 2.10. Consolidation of the semiconductor memory sector
2.11. Conclusions2.12. References; Chapter 3. Research on Advanced Charge Storage Memories; 3.1. Key features of Flash technology; 3.2. Flash technology scaling; 3.3. Innovative paths in silicon NVM technologies; 3.4. Research on advanced charge storage memories; 3.4.1. Silicon nanocrystal memories; 3.4.2. Silicon nanocrystal memories with high-k IPDs; 3.4.3. Hybrid silicon nanocrystal/SiN memories with high-k IPDs; 3.4.4. Silicon nanocrystal double layer memories with high-k IPDs; 3.4.5. Metal nano-dots coupled with organic templates; 3.4.6. High-k IPD-based memories
3.4.7. High-k/metal gate stacks for "TANOS" memories3.4.8. FinFlash devices; 3.4.9. Molecular charge-based memories; 3.4.10. Effects of the few electron phenomena; 3.5. Conclusions; 3.6. References; Chapter 4. Future Paths of Innovation; 4.1. 3D integration of charge-storage memories; 4.2. Alternative technologies; 4.2.1. Ferro RAMs; 4.2.2. Magnetic RAMs; 4.2.3. Phase-change RAMs; 4.2.4. Conductive bridging RAMs; 4.2.5. Oxide resistive RAMs; 4.2.6. New crossbar architectures; 4.3. Conclusion; 4.4. References; Chapter 5. Conclusions; 5.1. References; Index
Record Nr. UNINA-9910139511403321
De Salvo Barbara  
London, UK, : ISTE
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Silicon non-volatile memories [[electronic resource] ] : paths of innovation / / Barbara De Salvo
Silicon non-volatile memories [[electronic resource] ] : paths of innovation / / Barbara De Salvo
Autore De Salvo Barbara
Pubbl/distr/stampa London, UK, : ISTE
Descrizione fisica 1 online resource (248 p.)
Disciplina 621.381
621.39/732
Collana ISTE
Soggetto topico Semiconductor storage devices
Flash memories (Computers)
ISBN 1-282-69013-2
9786612690136
0-470-61181-2
0-470-61039-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Silicon Non-Volatile Memories; Table of Contents; Preface; Chapter 1. Introduction; Chapter 2. Semiconductor Industry Overview; 2.1. The cyclical semiconductor market; 2.2. The leading IC companies; 2.3. The world IC market distribution; 2.4. Semiconductor sales by IC devices; 2.5. The semiconductor memory market; 2.6. The impressive price decline of IC circuits; 2.7. Moore's Law, the ITRS and their economic impacts; 2.8. Exponential growth of manufacturing and R&D costs; 2.9. The structural evolution of the semiconductor industry; 2.10. Consolidation of the semiconductor memory sector
2.11. Conclusions2.12. References; Chapter 3. Research on Advanced Charge Storage Memories; 3.1. Key features of Flash technology; 3.2. Flash technology scaling; 3.3. Innovative paths in silicon NVM technologies; 3.4. Research on advanced charge storage memories; 3.4.1. Silicon nanocrystal memories; 3.4.2. Silicon nanocrystal memories with high-k IPDs; 3.4.3. Hybrid silicon nanocrystal/SiN memories with high-k IPDs; 3.4.4. Silicon nanocrystal double layer memories with high-k IPDs; 3.4.5. Metal nano-dots coupled with organic templates; 3.4.6. High-k IPD-based memories
3.4.7. High-k/metal gate stacks for "TANOS" memories3.4.8. FinFlash devices; 3.4.9. Molecular charge-based memories; 3.4.10. Effects of the few electron phenomena; 3.5. Conclusions; 3.6. References; Chapter 4. Future Paths of Innovation; 4.1. 3D integration of charge-storage memories; 4.2. Alternative technologies; 4.2.1. Ferro RAMs; 4.2.2. Magnetic RAMs; 4.2.3. Phase-change RAMs; 4.2.4. Conductive bridging RAMs; 4.2.5. Oxide resistive RAMs; 4.2.6. New crossbar architectures; 4.3. Conclusion; 4.4. References; Chapter 5. Conclusions; 5.1. References; Index
Record Nr. UNINA-9910829941203321
De Salvo Barbara  
London, UK, : ISTE
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui

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