Nonvolatile memory technologies with emphasis on Flash : a comprehensive guide to understanding and using NVM devices / / edited by Joe E. Brewer, Manzur Gill |
Pubbl/distr/stampa | Piscataway, New Jersey : , : IEEE Press, , c2008 |
Descrizione fisica | 1 online resource (787 p.) |
Disciplina |
004.5
006.786 |
Altri autori (Persone) |
BrewerJoe (Joe E.)
GillManzur |
Collana | IEEE Press series on microelectronic systems |
Soggetto topico |
Flash memories (Computers)
Semiconductor storage devices |
ISBN |
1-118-21162-6
1-281-22155-4 9786611221553 0-470-18135-4 0-470-18134-6 |
Classificazione | ST 175 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | Introduction to nonvolatile memory / Joe E. Brewer -- Flash memory applications / Gary Forni ... [et. al] -- Memory circuit technologies / Giulio G. Marotta, Giovanni Naso, Giuseppe Savarese -- Physics of flash memories / J. Van Houdt ... [et. al] -- Nor flash stacked and split-gate memory technology / Stephan N. Keeney, Manzur Gill, David Sweetman -- Nand flash memory technology / Koji Sakui, Kang-Deog Suh -- Dinor flash memory technology / Moriyoshi Nakashima, Natsuo Ajika -- P-channel flash memory technology / Frank Ruei-Ling Lin, Charles Ching-Hjsiang Hsu -- Embeddded flash memory / Chang-Kiang (Clinton) Kuo-Min Chang -- Tunnel dielectrics for scaled flash memory cells / T. P. Ma -- Flash memory reliability / Jian Justin Chen, Neal R. Mielke, Chenming Calvin Hu -- Multilevel cell digital memories / Albert Fazio, Mark Bauer -- Alternative memory technologies / Gary F. Derbenwick, Joe E. Brewer. |
Record Nr. | UNINA-9910144575403321 |
Piscataway, New Jersey : , : IEEE Press, , c2008 | ||
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Lo trovi qui: Univ. Federico II | ||
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Nonvolatile memory technologies with emphasis on Flash : a comprehensive guide to understanding and using NVM devices / / edited by Joe E. Brewer, Manzur Gill |
Pubbl/distr/stampa | Piscataway, New Jersey : , : IEEE Press, , c2008 |
Descrizione fisica | 1 online resource (787 p.) |
Disciplina |
004.5
006.786 |
Altri autori (Persone) |
BrewerJoe (Joe E.)
GillManzur |
Collana | IEEE Press series on microelectronic systems |
Soggetto topico |
Flash memories (Computers)
Semiconductor storage devices |
ISBN |
1-118-21162-6
1-281-22155-4 9786611221553 0-470-18135-4 0-470-18134-6 |
Classificazione | ST 175 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | Introduction to nonvolatile memory / Joe E. Brewer -- Flash memory applications / Gary Forni ... [et. al] -- Memory circuit technologies / Giulio G. Marotta, Giovanni Naso, Giuseppe Savarese -- Physics of flash memories / J. Van Houdt ... [et. al] -- Nor flash stacked and split-gate memory technology / Stephan N. Keeney, Manzur Gill, David Sweetman -- Nand flash memory technology / Koji Sakui, Kang-Deog Suh -- Dinor flash memory technology / Moriyoshi Nakashima, Natsuo Ajika -- P-channel flash memory technology / Frank Ruei-Ling Lin, Charles Ching-Hjsiang Hsu -- Embeddded flash memory / Chang-Kiang (Clinton) Kuo-Min Chang -- Tunnel dielectrics for scaled flash memory cells / T. P. Ma -- Flash memory reliability / Jian Justin Chen, Neal R. Mielke, Chenming Calvin Hu -- Multilevel cell digital memories / Albert Fazio, Mark Bauer -- Alternative memory technologies / Gary F. Derbenwick, Joe E. Brewer. |
Record Nr. | UNISA-996215452403316 |
Piscataway, New Jersey : , : IEEE Press, , c2008 | ||
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Lo trovi qui: Univ. di Salerno | ||
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Nonvolatile memory technologies with emphasis on Flash : a comprehensive guide to understanding and using NVM devices / / edited by Joe E. Brewer, Manzur Gill |
Pubbl/distr/stampa | Piscataway, New Jersey : , : IEEE Press, , c2008 |
Descrizione fisica | 1 online resource (787 p.) |
Disciplina |
004.5
006.786 |
Altri autori (Persone) |
BrewerJoe (Joe E.)
GillManzur |
Collana | IEEE Press series on microelectronic systems |
Soggetto topico |
Flash memories (Computers)
Semiconductor storage devices |
ISBN |
1-118-21162-6
1-281-22155-4 9786611221553 0-470-18135-4 0-470-18134-6 |
Classificazione | ST 175 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | Introduction to nonvolatile memory / Joe E. Brewer -- Flash memory applications / Gary Forni ... [et. al] -- Memory circuit technologies / Giulio G. Marotta, Giovanni Naso, Giuseppe Savarese -- Physics of flash memories / J. Van Houdt ... [et. al] -- Nor flash stacked and split-gate memory technology / Stephan N. Keeney, Manzur Gill, David Sweetman -- Nand flash memory technology / Koji Sakui, Kang-Deog Suh -- Dinor flash memory technology / Moriyoshi Nakashima, Natsuo Ajika -- P-channel flash memory technology / Frank Ruei-Ling Lin, Charles Ching-Hjsiang Hsu -- Embeddded flash memory / Chang-Kiang (Clinton) Kuo-Min Chang -- Tunnel dielectrics for scaled flash memory cells / T. P. Ma -- Flash memory reliability / Jian Justin Chen, Neal R. Mielke, Chenming Calvin Hu -- Multilevel cell digital memories / Albert Fazio, Mark Bauer -- Alternative memory technologies / Gary F. Derbenwick, Joe E. Brewer. |
Record Nr. | UNINA-9910830305203321 |
Piscataway, New Jersey : , : IEEE Press, , c2008 | ||
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Lo trovi qui: Univ. Federico II | ||
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NVMSA 2018 : 7th IEEE Non-Volatile Memory Systems and Applications Symposium : proceedings : 28-31 August 2018, Hakodate, Japan / / IEEE Computer Society |
Pubbl/distr/stampa | Los Alamitos, California : , : IEEE Computer Society, , 2018 |
Descrizione fisica | 1 online resource (124 pages) |
Disciplina | 005.435 |
Soggetto topico |
Flash memories (Computers)
Semiconductor storage devices |
ISBN | 1-5386-7403-3 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNISA-996280536803316 |
Los Alamitos, California : , : IEEE Computer Society, , 2018 | ||
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Lo trovi qui: Univ. di Salerno | ||
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NVMSA 2018 : 7th IEEE Non-Volatile Memory Systems and Applications Symposium : proceedings : 28-31 August 2018, Hakodate, Japan / / IEEE Computer Society |
Pubbl/distr/stampa | Los Alamitos, California : , : IEEE Computer Society, , 2018 |
Descrizione fisica | 1 online resource (124 pages) |
Disciplina | 005.435 |
Soggetto topico |
Flash memories (Computers)
Semiconductor storage devices |
ISBN | 1-5386-7403-3 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910294555803321 |
Los Alamitos, California : , : IEEE Computer Society, , 2018 | ||
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Lo trovi qui: Univ. Federico II | ||
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Seventh biennial IEEE Nonvolatile Memory Technology Conference : proceedings : 1998 conference : June 22-24, 1998, Albuquerque, NM, USA |
Pubbl/distr/stampa | [Place of publication not identified], : IEEE, 1998 |
Disciplina | 621.39/732 |
Soggetto topico |
Semiconductor storage devices
Magnetic memory (Computers) Flash memories (Computers) Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNISA-996212594403316 |
[Place of publication not identified], : IEEE, 1998 | ||
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Lo trovi qui: Univ. di Salerno | ||
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Seventh biennial IEEE Nonvolatile Memory Technology Conference : proceedings : 1998 conference : June 22-24, 1998, Albuquerque, NM, USA |
Pubbl/distr/stampa | [Place of publication not identified], : IEEE, 1998 |
Disciplina | 621.39/732 |
Soggetto topico |
Semiconductor storage devices
Magnetic memory (Computers) Flash memories (Computers) Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910872603703321 |
[Place of publication not identified], : IEEE, 1998 | ||
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Lo trovi qui: Univ. Federico II | ||
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Silicon non-volatile memories [[electronic resource] ] : paths of innovation / / Barbara De Salvo |
Autore | De Salvo Barbara |
Pubbl/distr/stampa | London, UK, : ISTE |
Descrizione fisica | 1 online resource (248 p.) |
Disciplina |
621.381
621.39/732 |
Collana | ISTE |
Soggetto topico |
Semiconductor storage devices
Flash memories (Computers) |
Soggetto genere / forma | Electronic books. |
ISBN |
1-282-69013-2
9786612690136 0-470-61181-2 0-470-61039-5 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Silicon Non-Volatile Memories; Table of Contents; Preface; Chapter 1. Introduction; Chapter 2. Semiconductor Industry Overview; 2.1. The cyclical semiconductor market; 2.2. The leading IC companies; 2.3. The world IC market distribution; 2.4. Semiconductor sales by IC devices; 2.5. The semiconductor memory market; 2.6. The impressive price decline of IC circuits; 2.7. Moore's Law, the ITRS and their economic impacts; 2.8. Exponential growth of manufacturing and R&D costs; 2.9. The structural evolution of the semiconductor industry; 2.10. Consolidation of the semiconductor memory sector
2.11. Conclusions2.12. References; Chapter 3. Research on Advanced Charge Storage Memories; 3.1. Key features of Flash technology; 3.2. Flash technology scaling; 3.3. Innovative paths in silicon NVM technologies; 3.4. Research on advanced charge storage memories; 3.4.1. Silicon nanocrystal memories; 3.4.2. Silicon nanocrystal memories with high-k IPDs; 3.4.3. Hybrid silicon nanocrystal/SiN memories with high-k IPDs; 3.4.4. Silicon nanocrystal double layer memories with high-k IPDs; 3.4.5. Metal nano-dots coupled with organic templates; 3.4.6. High-k IPD-based memories 3.4.7. High-k/metal gate stacks for "TANOS" memories3.4.8. FinFlash devices; 3.4.9. Molecular charge-based memories; 3.4.10. Effects of the few electron phenomena; 3.5. Conclusions; 3.6. References; Chapter 4. Future Paths of Innovation; 4.1. 3D integration of charge-storage memories; 4.2. Alternative technologies; 4.2.1. Ferro RAMs; 4.2.2. Magnetic RAMs; 4.2.3. Phase-change RAMs; 4.2.4. Conductive bridging RAMs; 4.2.5. Oxide resistive RAMs; 4.2.6. New crossbar architectures; 4.3. Conclusion; 4.4. References; Chapter 5. Conclusions; 5.1. References; Index |
Record Nr. | UNINA-9910139511403321 |
De Salvo Barbara
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||
London, UK, : ISTE | ||
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Lo trovi qui: Univ. Federico II | ||
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Silicon non-volatile memories [[electronic resource] ] : paths of innovation / / Barbara De Salvo |
Autore | De Salvo Barbara |
Pubbl/distr/stampa | London, UK, : ISTE |
Descrizione fisica | 1 online resource (248 p.) |
Disciplina |
621.381
621.39/732 |
Collana | ISTE |
Soggetto topico |
Semiconductor storage devices
Flash memories (Computers) |
ISBN |
1-282-69013-2
9786612690136 0-470-61181-2 0-470-61039-5 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Silicon Non-Volatile Memories; Table of Contents; Preface; Chapter 1. Introduction; Chapter 2. Semiconductor Industry Overview; 2.1. The cyclical semiconductor market; 2.2. The leading IC companies; 2.3. The world IC market distribution; 2.4. Semiconductor sales by IC devices; 2.5. The semiconductor memory market; 2.6. The impressive price decline of IC circuits; 2.7. Moore's Law, the ITRS and their economic impacts; 2.8. Exponential growth of manufacturing and R&D costs; 2.9. The structural evolution of the semiconductor industry; 2.10. Consolidation of the semiconductor memory sector
2.11. Conclusions2.12. References; Chapter 3. Research on Advanced Charge Storage Memories; 3.1. Key features of Flash technology; 3.2. Flash technology scaling; 3.3. Innovative paths in silicon NVM technologies; 3.4. Research on advanced charge storage memories; 3.4.1. Silicon nanocrystal memories; 3.4.2. Silicon nanocrystal memories with high-k IPDs; 3.4.3. Hybrid silicon nanocrystal/SiN memories with high-k IPDs; 3.4.4. Silicon nanocrystal double layer memories with high-k IPDs; 3.4.5. Metal nano-dots coupled with organic templates; 3.4.6. High-k IPD-based memories 3.4.7. High-k/metal gate stacks for "TANOS" memories3.4.8. FinFlash devices; 3.4.9. Molecular charge-based memories; 3.4.10. Effects of the few electron phenomena; 3.5. Conclusions; 3.6. References; Chapter 4. Future Paths of Innovation; 4.1. 3D integration of charge-storage memories; 4.2. Alternative technologies; 4.2.1. Ferro RAMs; 4.2.2. Magnetic RAMs; 4.2.3. Phase-change RAMs; 4.2.4. Conductive bridging RAMs; 4.2.5. Oxide resistive RAMs; 4.2.6. New crossbar architectures; 4.3. Conclusion; 4.4. References; Chapter 5. Conclusions; 5.1. References; Index |
Record Nr. | UNINA-9910829941203321 |
De Salvo Barbara
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||
London, UK, : ISTE | ||
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Lo trovi qui: Univ. Federico II | ||
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