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The conductor-dielectric junctions in a low density plasma / / Boris Vayner [and six others]
| The conductor-dielectric junctions in a low density plasma / / Boris Vayner [and six others] |
| Autore | Vayner B. |
| Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , November 1999 |
| Descrizione fisica | 1 online resource (22 pages) : illustrations |
| Collana | NASA/TM |
| Soggetto topico |
Conductors
Dielectrics Solar arrays Spacecraft charging Spacecraft glow Spacecraft design Glow discharges Light emission Line spectra Plasma interactions Plasma jets Plasmas (physics) |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910706158403321 |
Vayner B.
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| Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , November 1999 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Crystal growth technology [[electronic resource] ] : semiconductors and dielectrics / / edited by Peter Capper, Peter Rudolph
| Crystal growth technology [[electronic resource] ] : semiconductors and dielectrics / / edited by Peter Capper, Peter Rudolph |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, c2010 |
| Descrizione fisica | 1 online resource (368 p.) |
| Disciplina | 660.284298 |
| Altri autori (Persone) |
CapperPeter
RudolphPeter, Dozent Dr. sc. nat. |
| Soggetto topico |
Crystal growth
Dielectrics Semiconductors - Materials |
| Soggetto genere / forma | Electronic books. |
| ISBN |
3-527-63289-1
1-283-86975-6 3-527-63288-3 3-527-63287-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Crystal Growth Technology: Semiconductors and Dielectrics; Foreword; Contents; Preface; List of Contributors; Part I: Basic Concepts in Crystal Growth Technology; 1: Thermodynamic Modeling of Crystal-Growth Processes; 1.1 Introduction; 1.2 General Approach of Thermodynamic Modeling; 1.2.1 Basics; 1.2.1.1 State Variables for the Description of Equilibrium Conditions; 1.2.1.2 The ChemSage Software Package; 1.3 Crystal Growth in the System Si-C-O-Ar (Example 1); 1.3.1 Selection of Species; 1.3.2 Test Calculation, Check of Consistency; 1.3.3 Calculation of Gibbs Free Energy for Selected Reactions
1.3.4 Minimization of Gibbs Free Energy of Complex Systems1.3.5 The Thermodynamic-Technological Model of the Edge-Defined Film-Fed Growth of Silicon; 1.4 Crystal Growth of Carbon-Doped GaAs (Example 2); 1.4.1 Components and Species in the System; 1.4.2 Results; 1.4.3 Extended Model; 1.5 Summary and Conclusions; Acknowledgments; References; 2: Modeling of Vapor-Phase Growth of SiC and AlN Bulk Crystals; 2.1 Introduction; 2.2 Model Description; 2.2.1 Quasi-Thermodynamic Model of AlN and AlGaN HVPE; 2.2.2 Modeling of Gas-Phase Nucleation in SiC CVD and HTCVD; 2.3 Results and Discussions 2.3.1 GaN, AlN, and AlGaN HVPE2.3.2 SiC HTCVD; 2.4 Conclusions; References; 3: Advanced Technologies of Crystal Growth from Melt Using Vibrational Influence; 3.1 Introduction; 3.2 Axial Vibrational Control in Crystal Growth; 3.3 AVC-Assisted Czochralski Method; 3.4 AVC-Assisted Bridgman Method; 3.5 AVC-Assisted Floating Zone Method; 3.6 Conclusions; Acknowledgments; References; Part II: Semiconductors; 4: Numerical Analysis of Selected Processes in Directional Solidification of Silicon for Photovoltaics; 4.1 Introduction; 4.2 Directional Solidification Method; 4.3 Crystallization Process 4.4 Impurity Incorporation in Crystals4.5 Summary; Acknowledgment; References; 5: Characterization and Control of Defects in VCz GaAs Crystals Grown without B2O3 Encapsulant; 5.1 Introduction; 5.2 Retrospection; 5.3 Crystal Growth without B2O3 Encapsulant; 5.4 Inclusions, Precipitates and Dislocations; 5.5 Residual Impurities and Special Defect Studies; 5.6 Electrical and Optical Properties in SI GaAs; 5.7 Boron in SC GaAs; 5.8 Outlook on TMF-VCz; 5.9 Conclusions; Acknowledgments; References; 6: The Growth of Semiconductor Crystals (Ge, GaAs) by the Combined Heater Magnet Technology 6.1 Introduction6.2 Selected Fundamentals; 6.2.1 Convection-Driven Forces; 6.2.2 The Features of Traveling Magnetic Fields; 6.3 TMF Generation in Heater-Magnet Modules; 6.4 The HMM Design; 6.5 Numerical Modeling; 6.6 Dummy Measurements; 6.7 Growth Results under TMF; 6.7.1 LEC of GaAs; 6.7.2 VGF of Ge; 6.8 Conclusions and Outlook; Acknowledgment; References; 7: Manufacturing of Bulk AlN Substrates; 7.1 Introduction; 7.1.1 Substrates for Group III Nitride Devices; 7.1.2 Growth of Bulk Group III Nitride Crystals; 7.1.3 Sublimation Growth of AlN Crystals; 7.2 Modeling; 7.3 Experiment 7.3.1 Pregrowth Processing |
| Record Nr. | UNINA-9910140165703321 |
| Weinheim, : Wiley-VCH, c2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Crystal growth technology [[electronic resource] ] : semiconductors and dielectrics / / edited by Peter Capper, Peter Rudolph
| Crystal growth technology [[electronic resource] ] : semiconductors and dielectrics / / edited by Peter Capper, Peter Rudolph |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, c2010 |
| Descrizione fisica | 1 online resource (368 p.) |
| Disciplina | 660.284298 |
| Altri autori (Persone) |
CapperPeter
RudolphPeter, Dozent Dr. sc. nat. |
| Soggetto topico |
Crystal growth
Dielectrics Semiconductors - Materials |
| ISBN |
3-527-63289-1
1-283-86975-6 3-527-63288-3 3-527-63287-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Crystal Growth Technology: Semiconductors and Dielectrics; Foreword; Contents; Preface; List of Contributors; Part I: Basic Concepts in Crystal Growth Technology; 1: Thermodynamic Modeling of Crystal-Growth Processes; 1.1 Introduction; 1.2 General Approach of Thermodynamic Modeling; 1.2.1 Basics; 1.2.1.1 State Variables for the Description of Equilibrium Conditions; 1.2.1.2 The ChemSage Software Package; 1.3 Crystal Growth in the System Si-C-O-Ar (Example 1); 1.3.1 Selection of Species; 1.3.2 Test Calculation, Check of Consistency; 1.3.3 Calculation of Gibbs Free Energy for Selected Reactions
1.3.4 Minimization of Gibbs Free Energy of Complex Systems1.3.5 The Thermodynamic-Technological Model of the Edge-Defined Film-Fed Growth of Silicon; 1.4 Crystal Growth of Carbon-Doped GaAs (Example 2); 1.4.1 Components and Species in the System; 1.4.2 Results; 1.4.3 Extended Model; 1.5 Summary and Conclusions; Acknowledgments; References; 2: Modeling of Vapor-Phase Growth of SiC and AlN Bulk Crystals; 2.1 Introduction; 2.2 Model Description; 2.2.1 Quasi-Thermodynamic Model of AlN and AlGaN HVPE; 2.2.2 Modeling of Gas-Phase Nucleation in SiC CVD and HTCVD; 2.3 Results and Discussions 2.3.1 GaN, AlN, and AlGaN HVPE2.3.2 SiC HTCVD; 2.4 Conclusions; References; 3: Advanced Technologies of Crystal Growth from Melt Using Vibrational Influence; 3.1 Introduction; 3.2 Axial Vibrational Control in Crystal Growth; 3.3 AVC-Assisted Czochralski Method; 3.4 AVC-Assisted Bridgman Method; 3.5 AVC-Assisted Floating Zone Method; 3.6 Conclusions; Acknowledgments; References; Part II: Semiconductors; 4: Numerical Analysis of Selected Processes in Directional Solidification of Silicon for Photovoltaics; 4.1 Introduction; 4.2 Directional Solidification Method; 4.3 Crystallization Process 4.4 Impurity Incorporation in Crystals4.5 Summary; Acknowledgment; References; 5: Characterization and Control of Defects in VCz GaAs Crystals Grown without B2O3 Encapsulant; 5.1 Introduction; 5.2 Retrospection; 5.3 Crystal Growth without B2O3 Encapsulant; 5.4 Inclusions, Precipitates and Dislocations; 5.5 Residual Impurities and Special Defect Studies; 5.6 Electrical and Optical Properties in SI GaAs; 5.7 Boron in SC GaAs; 5.8 Outlook on TMF-VCz; 5.9 Conclusions; Acknowledgments; References; 6: The Growth of Semiconductor Crystals (Ge, GaAs) by the Combined Heater Magnet Technology 6.1 Introduction6.2 Selected Fundamentals; 6.2.1 Convection-Driven Forces; 6.2.2 The Features of Traveling Magnetic Fields; 6.3 TMF Generation in Heater-Magnet Modules; 6.4 The HMM Design; 6.5 Numerical Modeling; 6.6 Dummy Measurements; 6.7 Growth Results under TMF; 6.7.1 LEC of GaAs; 6.7.2 VGF of Ge; 6.8 Conclusions and Outlook; Acknowledgment; References; 7: Manufacturing of Bulk AlN Substrates; 7.1 Introduction; 7.1.1 Substrates for Group III Nitride Devices; 7.1.2 Growth of Bulk Group III Nitride Crystals; 7.1.3 Sublimation Growth of AlN Crystals; 7.2 Modeling; 7.3 Experiment 7.3.1 Pregrowth Processing |
| Record Nr. | UNINA-9910829932703321 |
| Weinheim, : Wiley-VCH, c2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Crystal growth technology [[electronic resource] ] : semiconductors and dielectrics / / edited by Peter Capper, Peter Rudolph
| Crystal growth technology [[electronic resource] ] : semiconductors and dielectrics / / edited by Peter Capper, Peter Rudolph |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, c2010 |
| Descrizione fisica | 1 online resource (368 p.) |
| Disciplina | 660.284298 |
| Altri autori (Persone) |
CapperPeter
RudolphPeter, Dozent Dr. sc. nat. |
| Soggetto topico |
Crystal growth
Dielectrics Semiconductors - Materials |
| ISBN |
3-527-63289-1
1-283-86975-6 3-527-63288-3 3-527-63287-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Crystal Growth Technology: Semiconductors and Dielectrics; Foreword; Contents; Preface; List of Contributors; Part I: Basic Concepts in Crystal Growth Technology; 1: Thermodynamic Modeling of Crystal-Growth Processes; 1.1 Introduction; 1.2 General Approach of Thermodynamic Modeling; 1.2.1 Basics; 1.2.1.1 State Variables for the Description of Equilibrium Conditions; 1.2.1.2 The ChemSage Software Package; 1.3 Crystal Growth in the System Si-C-O-Ar (Example 1); 1.3.1 Selection of Species; 1.3.2 Test Calculation, Check of Consistency; 1.3.3 Calculation of Gibbs Free Energy for Selected Reactions
1.3.4 Minimization of Gibbs Free Energy of Complex Systems1.3.5 The Thermodynamic-Technological Model of the Edge-Defined Film-Fed Growth of Silicon; 1.4 Crystal Growth of Carbon-Doped GaAs (Example 2); 1.4.1 Components and Species in the System; 1.4.2 Results; 1.4.3 Extended Model; 1.5 Summary and Conclusions; Acknowledgments; References; 2: Modeling of Vapor-Phase Growth of SiC and AlN Bulk Crystals; 2.1 Introduction; 2.2 Model Description; 2.2.1 Quasi-Thermodynamic Model of AlN and AlGaN HVPE; 2.2.2 Modeling of Gas-Phase Nucleation in SiC CVD and HTCVD; 2.3 Results and Discussions 2.3.1 GaN, AlN, and AlGaN HVPE2.3.2 SiC HTCVD; 2.4 Conclusions; References; 3: Advanced Technologies of Crystal Growth from Melt Using Vibrational Influence; 3.1 Introduction; 3.2 Axial Vibrational Control in Crystal Growth; 3.3 AVC-Assisted Czochralski Method; 3.4 AVC-Assisted Bridgman Method; 3.5 AVC-Assisted Floating Zone Method; 3.6 Conclusions; Acknowledgments; References; Part II: Semiconductors; 4: Numerical Analysis of Selected Processes in Directional Solidification of Silicon for Photovoltaics; 4.1 Introduction; 4.2 Directional Solidification Method; 4.3 Crystallization Process 4.4 Impurity Incorporation in Crystals4.5 Summary; Acknowledgment; References; 5: Characterization and Control of Defects in VCz GaAs Crystals Grown without B2O3 Encapsulant; 5.1 Introduction; 5.2 Retrospection; 5.3 Crystal Growth without B2O3 Encapsulant; 5.4 Inclusions, Precipitates and Dislocations; 5.5 Residual Impurities and Special Defect Studies; 5.6 Electrical and Optical Properties in SI GaAs; 5.7 Boron in SC GaAs; 5.8 Outlook on TMF-VCz; 5.9 Conclusions; Acknowledgments; References; 6: The Growth of Semiconductor Crystals (Ge, GaAs) by the Combined Heater Magnet Technology 6.1 Introduction6.2 Selected Fundamentals; 6.2.1 Convection-Driven Forces; 6.2.2 The Features of Traveling Magnetic Fields; 6.3 TMF Generation in Heater-Magnet Modules; 6.4 The HMM Design; 6.5 Numerical Modeling; 6.6 Dummy Measurements; 6.7 Growth Results under TMF; 6.7.1 LEC of GaAs; 6.7.2 VGF of Ge; 6.8 Conclusions and Outlook; Acknowledgment; References; 7: Manufacturing of Bulk AlN Substrates; 7.1 Introduction; 7.1.1 Substrates for Group III Nitride Devices; 7.1.2 Growth of Bulk Group III Nitride Crystals; 7.1.3 Sublimation Growth of AlN Crystals; 7.2 Modeling; 7.3 Experiment 7.3.1 Pregrowth Processing |
| Record Nr. | UNINA-9910841722103321 |
| Weinheim, : Wiley-VCH, c2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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DBD plasma actuators for flow control in air vehicles and jet engines [[electronic resource] ] : simulation of flight conditions in test chambers by density matching / / David E. Ashpis, Douglas R. Thurman
| DBD plasma actuators for flow control in air vehicles and jet engines [[electronic resource] ] : simulation of flight conditions in test chambers by density matching / / David E. Ashpis, Douglas R. Thurman |
| Autore | Ashpis D. E (David E.) |
| Edizione | [[Revised].] |
| Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2011] |
| Descrizione fisica | 1 online resource (31 pages) : color illustrations |
| Altri autori (Persone) | ThurmanDouglas R |
| Collana | NASA/TM |
| Soggetto topico |
Jet engines
Actuators Active control Dielectrics Gas density Turbines Pressure distribution Plasma jets Magnetohydrodynamic flow |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | DBD plasma actuators for flow control in air vehicles and jet engines |
| Record Nr. | UNINA-9910700976603321 |
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Ashpis D. E (David E.)
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| Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2011] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Dielectric barrier discharge plasma actuator for flow control, final report / / Dmitry F. Opaits
| Dielectric barrier discharge plasma actuator for flow control, final report / / Dmitry F. Opaits |
| Autore | Opaits Dmitry Florievich <1983-> |
| Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2012] |
| Descrizione fisica | 1 online resource (xviii, 139 pages) : color illustrations |
| Collana | [NASA contractor report] |
| Soggetto topico |
Actuators
Dielectrics Magnetohydrodynamic flow Sine waves Flexibility Force distribution Electric potential |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910702453403321 |
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Opaits Dmitry Florievich <1983->
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| Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2012] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Dielectric materials [[electronic resource] ] : introduction, research and applications / / Ram Naresh Prasad Choudhary, Sunanda Kumari Patri
| Dielectric materials [[electronic resource] ] : introduction, research and applications / / Ram Naresh Prasad Choudhary, Sunanda Kumari Patri |
| Autore | Choudhary Ram Naresh Prasad |
| Pubbl/distr/stampa | New York., : Nova Science Publishers, 2009 |
| Descrizione fisica | 1 online resource (166 p.) |
| Disciplina | 537/.24 |
| Altri autori (Persone) | PatriSunanda Kumari |
| Collana | Materials science and technologies |
| Soggetto topico | Dielectrics |
| Soggetto genere / forma | Electronic books. |
| ISBN | 1-61728-367-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910460006703321 |
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Choudhary Ram Naresh Prasad
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| New York., : Nova Science Publishers, 2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Dielectric materials [[electronic resource] ] : introduction, research and applications / / Ram Naresh Prasad Choudhary, Sunanda Kumari Patri
| Dielectric materials [[electronic resource] ] : introduction, research and applications / / Ram Naresh Prasad Choudhary, Sunanda Kumari Patri |
| Autore | Choudhary Ram Naresh Prasad |
| Pubbl/distr/stampa | New York., : Nova Science Publishers, 2009 |
| Descrizione fisica | 1 online resource (166 p.) |
| Disciplina | 537/.24 |
| Altri autori (Persone) | PatriSunanda Kumari |
| Collana | Materials science and technologies |
| Soggetto topico | Dielectrics |
| ISBN | 1-61728-367-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910785179503321 |
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Choudhary Ram Naresh Prasad
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| New York., : Nova Science Publishers, 2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Dielectric materials [[electronic resource] ] : introduction, research and applications / / Ram Naresh Prasad Choudhary, Sunanda Kumari Patri
| Dielectric materials [[electronic resource] ] : introduction, research and applications / / Ram Naresh Prasad Choudhary, Sunanda Kumari Patri |
| Autore | Choudhary Ram Naresh Prasad |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | New York., : Nova Science Publishers, 2009 |
| Descrizione fisica | 1 online resource (166 p.) |
| Disciplina | 537/.24 |
| Altri autori (Persone) | PatriSunanda Kumari |
| Collana | Materials science and technologies |
| Soggetto topico | Dielectrics |
| ISBN | 1-61728-367-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Library of Congress Cataloging-in-Publication Data -- Contents -- Preface -- Acknowledgement -- Chapter 1 -- Introduction -- Chapter 2 -- Classification of Dielectrics -- (A) Non-Ferroelectric Materials -- (B) Ferroelectric Materials -- Chapter 3 -- History -- 3.1. Ferroelectricity -- 3.2. Pyroelectricity -- 3.3. Piezoelectricity -- 3.4. Multiferroicity -- Chapter 4 -- Dielectric Response of Materials -- Chapter 5 -- Dielectric Spectroscopy -- 5.1. Phase Transition -- 5.2. Diffuse Phase Transition -- 5.3. Dielectric Relaxation -- Chapter 6 -- Synthesis of Different Dielectric Materials -- 6.1. Single Crystal -- 6.2. Ceramics -- 1) Mechanical Methods -- 2) Chemical Methods -- 6.3. Thin Film -- 6.4. Polymers -- 6.4.1. Electrical Properties of Polymers -- 6.4.2. Different Types of Dielectric Polymers -- 6.5. Liquid Crystals -- Thermotropic LCs -- Lyotropic -- Metallotropic -- 6.5.1. Ferroelectric Liquid Crystals -- 6.5.2. Dielectric Spectroscopy of Liquid Crystal -- Chapter 7 -- Characterization Techniques -- 7.1. Thermal Analysis -- 7.1.1. Differential Thermal Analysis (DTA) -- 7.1.2. Thermo Gravimetric Analysis (TGA) -- 7.3. Structural and Microstructural Analysis -- 7.3.1. X-ray Diffraction Study (XRD) -- 7.3.2. Scanning Electron Microscopy (SEM) -- 7.3.3. Transmission Electron Microscopy (TEM) -- 7.3.4. FTIR Spectroscopy -- 7.3.5. Raman Spectroscopy -- 7.4. Dielectric Study -- 7.4.1. Spontaneous Polarization Study -- 7.4.2. Pyroelectric Studies -- 7.4.3. Piezoelectric Study -- 7.5. Electrical Property -- 7.5.1. Complex Impedance Spectroscopy -- 7.5.2. Electrical Conductivity Study -- ac Conductivity -- dc Conductivity -- Chapter 8 -- Research on some Dielectric Materials -- 8.1. Hydrogen-Bonded Materials -- 8.1.1. KH2PO4 -- 8.1.2. PbHPO4 -- 8.1.3. CsH2PO4 -- 8.2. Oxide Ferroelectrics -- 8.2.1. Perovskite Structures.
(a) Charge Neutrality -- (b) Goldschmidt Tolerance Factor -- 8.2.2. Tungsten Bronze Structure -- 8.2.3. Layered Structure Oxides and Complex Compounds -- 8.2.4. Pyrochlore Oxides -- 8.2.4. Other Dielectrics -- Chapter 9 -- Complex Impedance Spectroscopy of Dielectric Materials -- Chapter 10 -- Multiferroic Property of Dielectric Materials -- Chapter 11 -- Applications -- 11.1. Dielectric Devices -- 11.2. Piezoelectric Devices -- 11.3. Pyroelectric Devices -- 11.4. Ferroelectric Devices -- 11.5. Multiferroic Devices -- 11.6. Other Applications -- Chapter 12 -- Conclusion -- References -- Index -- Blank Page. |
| Record Nr. | UNINA-9910827239303321 |
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Choudhary Ram Naresh Prasad
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| New York., : Nova Science Publishers, 2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Dielectric materials and applications / edited by Arthur R. von Hippel
| Dielectric materials and applications / edited by Arthur R. von Hippel |
| Autore | Hippel, Arthur R. von |
| Pubbl/distr/stampa | Cambridge, MA : MIT Press, 1954 |
| Descrizione fisica | x, 438 p. : ill. ; 22 cm. |
| Soggetto topico | Dielectrics |
| Classificazione |
537
621.3.2 QC585 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISALENTO-991000889039707536 |
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Hippel, Arthur R. von
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| Cambridge, MA : MIT Press, 1954 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. del Salento | ||
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