Bulk crystal growth of electronic, optical & optoelectronic materials [[electronic resource] /] / edited by Peter Capper |
Pubbl/distr/stampa | Chichester ; ; Hoboken, NJ, : John Wiley & Sons, c2005 |
Descrizione fisica | 1 online resource (579 p.) |
Disciplina | 621.38152 |
Altri autori (Persone) | CapperPeter |
Collana | Wiley series in materials for electronic and optoelectronic applications |
Soggetto topico |
Semiconductors - Materials
Optoelectronics - Materials Crystal growth |
ISBN |
1-280-24169-1
9786610241699 0-470-01208-0 0-470-01207-2 |
Classificazione | 51.12 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Contents; Series Preface; Preface; Acknowledgements; List of Contributors; Abbreviations; 1 Silicon; 1.1 Introduction; 1.2 Crystal-growth method and technology; 1.2.1 High-purity polycrystalline silicon; 1.2.2 CZ-Si growth apparatus and related furnace parts; 1.2.3 CZ-Si crystal growth; 1.2.4 FZ (float-zone) Si crystal growth; 1.2.5 Wafer processing; 1.3 Melt process; 1.3.1 Analysis of heat- and mass-transfer processes; 1.3.2 Oxygen transportation process and mechanism; 1.3.3 Control of oxygen concentration by application of cusp magnetic field; 1.4 Defect and wafer quality
1.4.1 Oxygen precipitation and gettering1.4.2 Grown-in defects; 1.5 Concluding remarks; References; 2 Growth of Gallium Arsenide; 2.1 Introduction; 2.2 Doping considerations; 2.3 Growth techniques; 2.3.1 Horizontal Bridgman and horizontal gradient freeze techniques; 2.3.2 Liquid encapsulated Czochralski (LEC) technique; 2.3.3 Vertical gradient freeze (VGF) technique; 2.4 Crystalline defects in GaAs; 2.4.1 Defects in melt-grown, semi-insulating GaAs; 2.5 Impurity and defect analysis of GaAs (chemical); 2.6 Impurity and defect analysis of GaAs (electrical) 2.6.1 Introduction to the electrical analysis of defects in GaAs2.7 Impurity and defect analysis of GaAs (optical); 2.7.1 Optical analysis of defects in GaAs; 2.8 Conclusions; Acknowledgments; References; 3 Computer Modelling of Bulk Crystal Growth; 3.1 Introduction; 3.2 Present state of bulk crystal growth modelling; 3.3 Bulk crystal growth processes; 3.4 Transport modelling in bulk crystal growth; 3.4.1 Governing equations; 3.4.2 Boundary conditions; 3.4.3 Continuum interface representation; 3.4.4 Radiation heat-transfer modelling; 3.4.5 Noninertial reference frames; 3.4.6 Magnetic fields 3.4.7 Turbulence3.5 Computer-aided analysis; 3.5.1 Discretization; 3.5.2 Numerical interface representation; 3.5.3 Deforming grids and ALE methods; 3.5.4 A simple fixed-grid method; 3.5.5 Quasi-steady-state models; 3.6 Modelling examples; 3.6.1 Float-zone refinement of silicon sheets; 3.6.2 Bridgman growth of CZT: axisymmetric analysis; 3.6.3 Bridgman growth of CZT: three-dimensional analysis; 3.6.4 Morphological stability in solution growth of KTP; 3.7 Summary and outlook; Acknowledgments; References; 4 Indium Phosphide Crystal Growth; 4.1 Introduction; 4.2 Material properties; 4.3 Hazards 4.4 Crystal structure4.5 Synthesis; 4.6 Single-crystal growth; 4.7 Defects; 4.7.1 Twins; 4.7.2 Dislocations; 4.8 Dislocation reduction; 4.9 VGF growth; 4.10 Crystal-growth modelling; 4.11 Dopants; 4.11.1 N-type InP; 4.11.2 P-type InP; 4.11.3 Semi-insulating InP; 4.12 Conclusion; Acknowledgements; References; 5 Bulk Growth of InSb and Related Ternary Alloys; 5.1 Introduction-a little history; 5.2 Why the interest?; 5.3 Key properties; 5.3.1 Crystallography; 5.3.2 Growth-critical material parameters; 5.3.3 Common growth conditions; 5.3.4 Impurities and dopants; 5.4 Czochralski growth 5.4.1 Challenges |
Record Nr. | UNINA-9910841721403321 |
Chichester ; ; Hoboken, NJ, : John Wiley & Sons, c2005 | ||
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Lo trovi qui: Univ. Federico II | ||
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Characterization of 4H <000-1> silicon carbide films grown by solvent-laser heated floating zone / / Andrew A. Woodworth [and four others] |
Autore | Woodworth Andrew A. |
Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , 2012 |
Descrizione fisica | 1 online resource (6 pages) : illustrations |
Collana | NASA/TM |
Soggetto topico |
Silicon carbides
Single crystals Crystal growth Laser heating X ray diffraction Diffraction patterns |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910702487203321 |
Woodworth Andrew A.
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Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , 2012 | ||
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Lo trovi qui: Univ. Federico II | ||
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Concepts for microgravity experiments utilizing gloveboxes / / Roger L. Kroes, Donald A. Reiss, and Barbara Facemire |
Autore | Kroes Roger L. |
Pubbl/distr/stampa | Washington, DC : , : National Aeronautics and Space Administration, , September 1989 |
Descrizione fisica | 1 online resource (iv, 40 pages) : illustrations |
Collana | NASA/TM |
Soggetto topico |
Protective clothing
Gloves Spaceborne experiments Space processing Crystal growth |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910713790703321 |
Kroes Roger L.
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Washington, DC : , : National Aeronautics and Space Administration, , September 1989 | ||
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Lo trovi qui: Univ. Federico II | ||
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The control of float zone interfaces by the use of selected boundary conditions : final report / / L.M. Foster and J. McIntosh |
Autore | Foster Lydia Mary |
Pubbl/distr/stampa | Marshall Space Flight Center, Alabama : , : NASA- Marshall Space Flight Center, , December 1983 |
Descrizione fisica | 1 online resource (various pagings) : illustrations |
Collana | NASA/CR |
Soggetto topico |
Crystal growth
Boundary conditions Space processing Boundary value problems Space commercialization |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Altri titoli varianti | Control of float zone interfaces by the use of selected boundary conditions |
Record Nr. | UNINA-9910709685803321 |
Foster Lydia Mary
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Marshall Space Flight Center, Alabama : , : NASA- Marshall Space Flight Center, , December 1983 | ||
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Lo trovi qui: Univ. Federico II | ||
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Crystal engineering |
Pubbl/distr/stampa | Oxford, : Pergamon Press |
Soggetto topico |
Crystals
Crystal growth Crystallography Cristaux Cristaux - Croissance Cristallographie |
Soggetto genere / forma | Periodicals. |
ISSN | 1879-2413 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Periodico |
Lingua di pubblicazione | eng |
Record Nr. | UNISA-996206278403316 |
Oxford, : Pergamon Press | ||
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Lo trovi qui: Univ. di Salerno | ||
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Crystal engineering |
Pubbl/distr/stampa | Oxford, : Pergamon Press |
Soggetto topico |
Crystals
Crystal growth Crystallography Cristaux Cristaux - Croissance Cristallographie |
Soggetto genere / forma | Periodicals. |
ISSN | 1879-2413 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Periodico |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910146972603321 |
Oxford, : Pergamon Press | ||
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Lo trovi qui: Univ. Federico II | ||
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Crystal growth : an introduction / edited by P. Hartman |
Autore | Hartman, P. |
Pubbl/distr/stampa | Amsterdam : North-Holland Publ. Co., 1973 |
Descrizione fisica | 531 p. ; 23 cm. |
Collana | North-Holland series in crystal growth ; 1 |
Soggetto topico | Crystal growth |
ISBN | 0720418216 |
Classificazione |
53.7.8
53.7.15 53.7.16 548'.5 QD921 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNISALENTO-991000878399707536 |
Hartman, P.
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Amsterdam : North-Holland Publ. Co., 1973 | ||
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Lo trovi qui: Univ. del Salento | ||
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Crystal Growth / / edited by Vadim Glebovsky |
Pubbl/distr/stampa | London : , : IntechOpen, , 2019 |
Descrizione fisica | 1 online resource (xiv, 112 pages) : illustrations |
Disciplina | 548.5 |
Soggetto topico | Crystal growth |
ISBN | 1-83962-675-5 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910407757203321 |
London : , : IntechOpen, , 2019 | ||
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Lo trovi qui: Univ. Federico II | ||
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Crystal Growth / / edited by Vadim Glebovsky |
Pubbl/distr/stampa | London : , : IntechOpen, , 2019 |
Descrizione fisica | 1 online resource (xiv, 112 pages ) |
Disciplina | 548.5 |
Soggetto topico | Crystal growth |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910688318903321 |
London : , : IntechOpen, , 2019 | ||
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Lo trovi qui: Univ. Federico II | ||
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Crystal growth & design |
Pubbl/distr/stampa | Washington, D.C., : American Chemical Society, ©2000- |
Disciplina | 548 |
Soggetto topico |
Crystal growth
Crystals Cristaux - Croissance Cristaux Kristallzüchtung Zeitschrift Online-Ressource |
Soggetto genere / forma |
Periodicals.
Zeitschrift Elektronische Publikation |
ISSN | 1528-7505 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Periodico |
Lingua di pubblicazione | eng |
Altri titoli varianti | Crystal growth and design |
Record Nr. | UNINA-9910135890203321 |
Washington, D.C., : American Chemical Society, ©2000- | ||
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Lo trovi qui: Univ. Federico II | ||
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