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Bulk crystal growth of electronic, optical & optoelectronic materials [[electronic resource] /] / edited by Peter Capper
Bulk crystal growth of electronic, optical & optoelectronic materials [[electronic resource] /] / edited by Peter Capper
Pubbl/distr/stampa Chichester ; ; Hoboken, NJ, : John Wiley & Sons, c2005
Descrizione fisica 1 online resource (579 p.)
Disciplina 621.38152
Altri autori (Persone) CapperPeter
Collana Wiley series in materials for electronic and optoelectronic applications
Soggetto topico Semiconductors - Materials
Optoelectronics - Materials
Crystal growth
ISBN 1-280-24169-1
9786610241699
0-470-01208-0
0-470-01207-2
Classificazione 51.12
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Contents; Series Preface; Preface; Acknowledgements; List of Contributors; Abbreviations; 1 Silicon; 1.1 Introduction; 1.2 Crystal-growth method and technology; 1.2.1 High-purity polycrystalline silicon; 1.2.2 CZ-Si growth apparatus and related furnace parts; 1.2.3 CZ-Si crystal growth; 1.2.4 FZ (float-zone) Si crystal growth; 1.2.5 Wafer processing; 1.3 Melt process; 1.3.1 Analysis of heat- and mass-transfer processes; 1.3.2 Oxygen transportation process and mechanism; 1.3.3 Control of oxygen concentration by application of cusp magnetic field; 1.4 Defect and wafer quality
1.4.1 Oxygen precipitation and gettering1.4.2 Grown-in defects; 1.5 Concluding remarks; References; 2 Growth of Gallium Arsenide; 2.1 Introduction; 2.2 Doping considerations; 2.3 Growth techniques; 2.3.1 Horizontal Bridgman and horizontal gradient freeze techniques; 2.3.2 Liquid encapsulated Czochralski (LEC) technique; 2.3.3 Vertical gradient freeze (VGF) technique; 2.4 Crystalline defects in GaAs; 2.4.1 Defects in melt-grown, semi-insulating GaAs; 2.5 Impurity and defect analysis of GaAs (chemical); 2.6 Impurity and defect analysis of GaAs (electrical)
2.6.1 Introduction to the electrical analysis of defects in GaAs2.7 Impurity and defect analysis of GaAs (optical); 2.7.1 Optical analysis of defects in GaAs; 2.8 Conclusions; Acknowledgments; References; 3 Computer Modelling of Bulk Crystal Growth; 3.1 Introduction; 3.2 Present state of bulk crystal growth modelling; 3.3 Bulk crystal growth processes; 3.4 Transport modelling in bulk crystal growth; 3.4.1 Governing equations; 3.4.2 Boundary conditions; 3.4.3 Continuum interface representation; 3.4.4 Radiation heat-transfer modelling; 3.4.5 Noninertial reference frames; 3.4.6 Magnetic fields
3.4.7 Turbulence3.5 Computer-aided analysis; 3.5.1 Discretization; 3.5.2 Numerical interface representation; 3.5.3 Deforming grids and ALE methods; 3.5.4 A simple fixed-grid method; 3.5.5 Quasi-steady-state models; 3.6 Modelling examples; 3.6.1 Float-zone refinement of silicon sheets; 3.6.2 Bridgman growth of CZT: axisymmetric analysis; 3.6.3 Bridgman growth of CZT: three-dimensional analysis; 3.6.4 Morphological stability in solution growth of KTP; 3.7 Summary and outlook; Acknowledgments; References; 4 Indium Phosphide Crystal Growth; 4.1 Introduction; 4.2 Material properties; 4.3 Hazards
4.4 Crystal structure4.5 Synthesis; 4.6 Single-crystal growth; 4.7 Defects; 4.7.1 Twins; 4.7.2 Dislocations; 4.8 Dislocation reduction; 4.9 VGF growth; 4.10 Crystal-growth modelling; 4.11 Dopants; 4.11.1 N-type InP; 4.11.2 P-type InP; 4.11.3 Semi-insulating InP; 4.12 Conclusion; Acknowledgements; References; 5 Bulk Growth of InSb and Related Ternary Alloys; 5.1 Introduction-a little history; 5.2 Why the interest?; 5.3 Key properties; 5.3.1 Crystallography; 5.3.2 Growth-critical material parameters; 5.3.3 Common growth conditions; 5.3.4 Impurities and dopants; 5.4 Czochralski growth
5.4.1 Challenges
Record Nr. UNINA-9910841721403321
Chichester ; ; Hoboken, NJ, : John Wiley & Sons, c2005
Materiale a stampa
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Characterization of 4H <000-1> silicon carbide films grown by solvent-laser heated floating zone / / Andrew A. Woodworth [and four others]
Characterization of 4H <000-1> silicon carbide films grown by solvent-laser heated floating zone / / Andrew A. Woodworth [and four others]
Autore Woodworth Andrew A.
Pubbl/distr/stampa Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , 2012
Descrizione fisica 1 online resource (6 pages) : illustrations
Collana NASA/TM
Soggetto topico Silicon carbides
Single crystals
Crystal growth
Laser heating
X ray diffraction
Diffraction patterns
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910702487203321
Woodworth Andrew A.  
Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , 2012
Materiale a stampa
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Concepts for microgravity experiments utilizing gloveboxes / / Roger L. Kroes, Donald A. Reiss, and Barbara Facemire
Concepts for microgravity experiments utilizing gloveboxes / / Roger L. Kroes, Donald A. Reiss, and Barbara Facemire
Autore Kroes Roger L.
Pubbl/distr/stampa Washington, DC : , : National Aeronautics and Space Administration, , September 1989
Descrizione fisica 1 online resource (iv, 40 pages) : illustrations
Collana NASA/TM
Soggetto topico Protective clothing
Gloves
Spaceborne experiments
Space processing
Crystal growth
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910713790703321
Kroes Roger L.  
Washington, DC : , : National Aeronautics and Space Administration, , September 1989
Materiale a stampa
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The control of float zone interfaces by the use of selected boundary conditions : final report / / L.M. Foster and J. McIntosh
The control of float zone interfaces by the use of selected boundary conditions : final report / / L.M. Foster and J. McIntosh
Autore Foster Lydia Mary
Pubbl/distr/stampa Marshall Space Flight Center, Alabama : , : NASA- Marshall Space Flight Center, , December 1983
Descrizione fisica 1 online resource (various pagings) : illustrations
Collana NASA/CR
Soggetto topico Crystal growth
Boundary conditions
Space processing
Boundary value problems
Space commercialization
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Control of float zone interfaces by the use of selected boundary conditions
Record Nr. UNINA-9910709685803321
Foster Lydia Mary  
Marshall Space Flight Center, Alabama : , : NASA- Marshall Space Flight Center, , December 1983
Materiale a stampa
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Crystal engineering
Crystal engineering
Pubbl/distr/stampa Oxford, : Pergamon Press
Soggetto topico Crystals
Crystal growth
Crystallography
Cristaux
Cristaux - Croissance
Cristallographie
Soggetto genere / forma Periodicals.
ISSN 1879-2413
Formato Materiale a stampa
Livello bibliografico Periodico
Lingua di pubblicazione eng
Record Nr. UNISA-996206278403316
Oxford, : Pergamon Press
Materiale a stampa
Lo trovi qui: Univ. di Salerno
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Crystal engineering
Crystal engineering
Pubbl/distr/stampa Oxford, : Pergamon Press
Soggetto topico Crystals
Crystal growth
Crystallography
Cristaux
Cristaux - Croissance
Cristallographie
Soggetto genere / forma Periodicals.
ISSN 1879-2413
Formato Materiale a stampa
Livello bibliografico Periodico
Lingua di pubblicazione eng
Record Nr. UNINA-9910146972603321
Oxford, : Pergamon Press
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Crystal growth : an introduction / edited by P. Hartman
Crystal growth : an introduction / edited by P. Hartman
Autore Hartman, P.
Pubbl/distr/stampa Amsterdam : North-Holland Publ. Co., 1973
Descrizione fisica 531 p. ; 23 cm.
Collana North-Holland series in crystal growth ; 1
Soggetto topico Crystal growth
ISBN 0720418216
Classificazione 53.7.8
53.7.15
53.7.16
548'.5
QD921
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISALENTO-991000878399707536
Hartman, P.  
Amsterdam : North-Holland Publ. Co., 1973
Materiale a stampa
Lo trovi qui: Univ. del Salento
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Crystal Growth / / edited by Vadim Glebovsky
Crystal Growth / / edited by Vadim Glebovsky
Pubbl/distr/stampa London : , : IntechOpen, , 2019
Descrizione fisica 1 online resource (xiv, 112 pages) : illustrations
Disciplina 548.5
Soggetto topico Crystal growth
ISBN 1-83962-675-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910407757203321
London : , : IntechOpen, , 2019
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Crystal Growth / / edited by Vadim Glebovsky
Crystal Growth / / edited by Vadim Glebovsky
Pubbl/distr/stampa London : , : IntechOpen, , 2019
Descrizione fisica 1 online resource (xiv, 112 pages )
Disciplina 548.5
Soggetto topico Crystal growth
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910688318903321
London : , : IntechOpen, , 2019
Materiale a stampa
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Crystal growth & design
Crystal growth & design
Pubbl/distr/stampa Washington, D.C., : American Chemical Society, ©2000-
Disciplina 548
Soggetto topico Crystal growth
Crystals
Cristaux - Croissance
Cristaux
Kristallzüchtung
Zeitschrift
Online-Ressource
Soggetto genere / forma Periodicals.
Zeitschrift
Elektronische Publikation
ISSN 1528-7505
Formato Materiale a stampa
Livello bibliografico Periodico
Lingua di pubblicazione eng
Altri titoli varianti Crystal growth and design
Record Nr. UNINA-9910135890203321
Washington, D.C., : American Chemical Society, ©2000-
Materiale a stampa
Lo trovi qui: Univ. Federico II
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