Autore	Aritome Seiichi
Pubbl/distr/stampa	Hoboken, New Jersey : , : Wiley, , [2016]
Descrizione fisica	1 online resource (433 p.)
Disciplina	004.5/6
Collana	IEEE press series on microelectronic systems
Soggetto topico	Flash memories (Computers) Computer storage devices
ISBN	1-119-13261-4 1-119-13262-2
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Nota di contenuto	Principle of NAND flash memory -- NAND flash memory devices -- Advanced operation for multilevel cell -- Scaling challenge of NAND flash memory cells -- Reliability of NAND flash memory -- Three-dimensional NAND flash cell -- Challenges of NAND flash memory.
Record Nr.	UNINA-9910137177303321

Autore	Carrasco Rolando Antonio
Pubbl/distr/stampa	Chichester, U.K. : , : Wiley, , 2008
Descrizione fisica	1 online resource (323 p.)
Disciplina	005.7/2
Altri autori (Persone)	JohnstonMartin <1977->
Soggetto topico	Error-correcting codes (Information theory) Wireless communication systems Data transmission systems Computer storage devices Analog electronic systems
ISBN	1-282-01241-X 9786612012419 0-470-74041-8 0-470-74040-X
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Nota di contenuto	Information, channel capacity and channel modelling -- Basic principles of non-binary codes -- Non-binary block codes -- Algebraic-geometric codes -- List decoding -- Non-binary low density parity check codes -- Non-binary convolutional codes -- Non-binary turbo codes.
Record Nr.	UNINA-9910144408503321

Autore	Lacaze Pierre-Camille
Pubbl/distr/stampa	Hoboken, New Jersey : , : ISTE Ltd/John Wiley and Sons Inc, , 2014
Descrizione fisica	1 online resource (305 p.)
Disciplina	621.39732
Collana	Electronics engineering series
Soggetto topico	Flash memories (Computers) Computer storage devices
ISBN	1-118-79012-X 1-118-78998-9 1-118-79028-6
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Nota di contenuto	Cover; Title Page; Copyright; Contents; Acknowledgments; Preface; PART 1: Information Storage and the State of the Art of Electronic Memories; 1: General Issues Related to Data Storage and Analysis Classification of Memories and Related Perspectives; 1.1. Issues arising from the flow of digital information; 1.2. Current electronic memories and their classification; 1.3. Memories of the future; 2: State of the Art of DRAM, SRAM, Flash, HDD and MRAM Electronic Memories; 2.1. DRAM volatile memories; 2.1.1. The operating principle of a MOSFET (metal oxide semiconductor field effect transistor) 2.1.2. Operating characteristics of DRAM memories 2.2. SRAM memories; 2.3. Non-volatile memories related to CMOS technology; 2.3.1. Operational characteristics of a floating gate MOSFET; 2.3.1.1. How to charge and discharge the floating gate?; 2.3.1.2. Physical problems related to the storage of electrical charges and their impact on the operation of a floating gate memory; 2.3.1.2.1. Charge retention; 2.3.1.2.2. Problems related to writing and electron injection; 2.3.1.3. Multilevel cells 2.3.1.4. The quality of dielectrics: one of the reasons behind the limitation of floating gate memory performances 2.3.1.5. The "Achille's heel" of floating gate memories; 2.3.2. Flash memories; 2.3.2.1. NOR and NAND Flash memories; 2.3.2.2. General organization of NAND Flash memories; 2.3.2.3. Perspectives for Flash memories; 2.4. Non-volatile magnetic memories (hard disk drives - HDDs and MRAMs); 2.4.1. The discovery of giant magneto resistance at the origin of the spread of hard disk drives; 2.4.1.1. GMR characteristics; 2.4.2. Spin valves; 2.4.3. Magnetic tunnel junctions 2.4.4. Operational characteristics of a hard disk drive (HDD)2.4.5. Characteristics of a magnetic random access memory (MRAM); 2.5. Conclusion; 3: Evolution of SSD Toward FeRAM, FeFET, CTM and STT-RAM Memories; 3.1. Evolution of DRAMs toward ferroelectric FeRAMs; 3.1.1. Characteristics of a ferroelectric material; 3.1.2. Principle of an FeRAM memory; 3.1.3. Characteristics of an FeFET memory; 3.1.3.1. Retention characteristics; 3.1.3.2. Ferroelectric materials other than oxides?; 3.2. The evolution of Flash memories towards charge trap memories (CTM) 3.3. The evolution of magnetic memories (MRAM) toward spin torque transfer memories (STT-RAM)3.3.1. Nanomagnetism and experimental implications; 3.3.2. Characteristics of spin torque transfer; 3.3.3. Recent evolution with use of perpendicular magneticanisotropic materials; 3.4. Conclusions; PART 2: The Emergence of New Concepts: The Inorganic NEMS, PCRAM, ReRAM and Organic Memories; 4: Volatile and Non-volatile Memories Based on NEMS; 4.1. Nanoelectromechanical switches with two electrodes; 4.1.1. NEMS with cantilevers; 4.1.1.1. Operation and memory effect of an NEMS with a cantilever 4.1.1.2. Description of the elaboration technique
Record Nr.	UNINA-9910140494003321

Pubbl/distr/stampa	New York : , : IEEE, , 2016
Descrizione fisica	1 online resource (112 pages)
Soggetto topico	Computer storage devices Nonvolatile random-access memory Computer engineering
ISBN	1-5090-3522-2
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Record Nr.	UNISA-996279366003316

Pubbl/distr/stampa	Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 2018
Descrizione fisica	1 online resource (104 pages)
Disciplina	004.5
Soggetto topico	Computer storage devices Nonvolatile random-access memory
ISBN	1-5386-7783-0
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Record Nr.	UNINA-9910305151203321