Switching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C [[electronic resource] /] / Janis M. Niedra |
Autore | Niedra Janis M |
Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006] |
Descrizione fisica | 1 online resource (6 pages) : illustrations |
Collana | NASA/CR- |
Soggetto topico |
Junction transistors
High temperature Bipolar transistors Switching Static loads Electric potential |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910699314303321 |
Niedra Janis M | ||
Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006] | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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Total ionizing dose test report for the SFT2222A NPN bipolar junction transistor / / Dakai Chen, James Forney |
Autore | Chen Dakai <1982-> |
Pubbl/distr/stampa | Greenbelt, Maryland : , : National Aeronautics and Space Administration, Goddard Space Flight Center, , April 2021 |
Descrizione fisica | 1 online resource (approximately 22 pages) : illustrations |
Collana | NASA/TM |
Soggetto topico |
Bipolar transistors
Junction transistors |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910716639603321 |
Chen Dakai <1982-> | ||
Greenbelt, Maryland : , : National Aeronautics and Space Administration, Goddard Space Flight Center, , April 2021 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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