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Biblioteca

MARC Lista (tabellare)
Proceedings of the ... Bipolar Circuits and Technology Meeting / / sponsored by IEEE Electron Devices Society and Microelectronic and Information Sciences Center, University of Minnesota, in cooperation with the IEEE Circuits and Systems Society and IEEE Twin Cities Section
Proceedings of the ... Bipolar Circuits and Technology Meeting / / sponsored by IEEE Electron Devices Society and Microelectronic and Information Sciences Center, University of Minnesota, in cooperation with the IEEE Circuits and Systems Society and IEEE Twin Cities Section
Pubbl/distr/stampa New York, NY, : IEEE
Descrizione fisica 1 online resource
Disciplina 621.39/732
Soggetto topico Bipolar integrated circuits
Bipolar transistors
Soggetto genere / forma Conference papers and proceedings.
Formato Materiale a stampa
Livello bibliografico Periodico
Lingua di pubblicazione eng
Record Nr. UNISA-996279849203316
New York, NY, : IEEE
Materiale a stampa
Lo trovi qui: Univ. di Salerno
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Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting
Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting
Pubbl/distr/stampa [New York] : , : [IEEE]
Disciplina 621.39
621.39/732
Soggetto topico Bipolar integrated circuits
Bipolar transistors
Metal oxide semiconductors, Complementary
Soggetto genere / forma Periodicals.
Conference papers and proceedings.
ISSN 2378-590X
Formato Materiale a stampa
Livello bibliografico Periodico
Lingua di pubblicazione eng
Altri titoli varianti .. Bipolar/BiCOMS Circuits and Technology Meeting
BCTM proceedings
IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Bipolar/BiCMOS Circuits and Technology Meeting ... proceedings of the
Proceedings of the ... Bipolar/BiCOMS [sic] Circuits and Technology Meeting
Record Nr. UNISA-996278334403316
[New York] : , : [IEEE]
Materiale a stampa
Lo trovi qui: Univ. di Salerno
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Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting
Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting
Pubbl/distr/stampa [New York] : , : [IEEE]
Disciplina 621.39
621.39/732
Soggetto topico Bipolar integrated circuits
Bipolar transistors
Metal oxide semiconductors, Complementary
Soggetto genere / forma Periodicals.
Conference papers and proceedings.
ISSN 2378-590X
Formato Materiale a stampa
Livello bibliografico Periodico
Lingua di pubblicazione eng
Altri titoli varianti .. Bipolar/BiCOMS Circuits and Technology Meeting
BCTM proceedings
IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Bipolar/BiCMOS Circuits and Technology Meeting ... proceedings of the
Proceedings of the ... Bipolar/BiCOMS [sic] Circuits and Technology Meeting
Record Nr. UNINA-9910626172703321
[New York] : , : [IEEE]
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Programmable, automated transistor test system / / Long V. Truong and Gale R. Sundburg
Programmable, automated transistor test system / / Long V. Truong and Gale R. Sundburg
Autore Truong Long V.
Pubbl/distr/stampa Washington, D.C. : , : National Aeronautics and Space Administration, Scientific and Technical Information Branch, , February 1986
Descrizione fisica 1 online resource (22 pages) : illustrations
Collana NASA/TP
Soggetto topico Bipolar transistors
Performance tests
Field effect transistors
Numerical control
Software engineering
Transistors - Testing - Computer programs
Bipolar transistors - Testing - Computer programs
Metal oxide semiconductors - Testing - Computer programs
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910709716503321
Truong Long V.  
Washington, D.C. : , : National Aeronautics and Space Administration, Scientific and Technical Information Branch, , February 1986
Materiale a stampa
Lo trovi qui: Univ. Federico II
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The role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in mobile technology platforms / / by Gregory A. Mitchell
The role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in mobile technology platforms / / by Gregory A. Mitchell
Autore Mitchell Gregory A.
Pubbl/distr/stampa Adelphi, MD : , : Army Research Laboratory, , September 2011
Descrizione fisica 1 online resource (vi, 30 pages) : illustrations
Collana ARL-TN
Soggetto topico Bipolar transistors
Silicon
Germanium
Digital communications
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Role of the Silicon Germanium
Record Nr. UNINA-9910701448803321
Mitchell Gregory A.  
Adelphi, MD : , : Army Research Laboratory, , September 2011
Materiale a stampa
Lo trovi qui: Univ. Federico II
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SiGe heterojunction bipolar transistors [[electronic resource] /] / Peter Ashburn
SiGe heterojunction bipolar transistors [[electronic resource] /] / Peter Ashburn
Autore Ashburn Peter
Pubbl/distr/stampa Hoboken, NJ, : John Wiley & Sons, c2003
Descrizione fisica 1 online resource (288 p.)
Disciplina 621.313
621.3815282
Soggetto topico Bipolar transistors
Silicon
Germanium
Soggetto genere / forma Electronic books.
ISBN 1-280-26903-0
9786610269037
0-470-09073-1
0-470-09074-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto SiGe Heterojunction Bipolar Transistors; Contents; Preface; Physical Constants and Properties of Silicon and Silicon-Germanium; List of Symbols; 1 Introduction; 1.1 Evolution of Silicon Bipolar Technology; 1.2 Evolution of Silicon-Germanium HBT Technology; 1.3 Operating Principles of the Bipolar Transistor; References; 2 Basic Bipolar Transistor Theory; 2.1 Introduction; 2.2 Components of Base Current; 2.3 Fundamental Equations; 2.3.1 Assumptions; 2.4 Base Current; 2.4.1 Base Current in Shallow Emitters; 2.4.2 Base Current in Deep Emitters; 2.4.3 Recombination Current in the Neutral Base
2.5 Collector Current2.6 Current Gain; 2.7 Gummel Numbers; 3 Heavy Doping Effects; 3.1 Introduction; 3.2 Majority and Minority Carrier Mobility; 3.3 Bandgap Narrowing; 3.4 Minority Carrier Lifetime; 3.5 Gain and Heavy Doping Effects; 3.6 Non-uniform Doping Profiles; References; 4 Second-Order Effects; 4.1 Introduction; 4.2 Low Current Gain; 4.2.1 Recombination via Deep Levels; 4.2.2 Recombination Current in the Forward Biased Emitter/Base Depletion Region; 4.2.3 Generation Current in a Reverse Biased pn Junction; 4.2.4 Origins of Deep Levels in Bipolar Transistors; 4.3 High Current Gain
4.4 Basewidth Modulation4.5 Series Resistance; 4.6 Junction Breakdown; 4.6.1 Punch-through; 4.6.2 Zener Breakdown; 4.6.3 Avalanche Breakdown; 4.6.4 Junction Breakdown in Practice; 4.6.5 Common Base and Common Emitter Breakdown Voltages; 4.6.6 Trade-off between Gain and BV(CEO); References; 5 High-frequency Performance; 5.1 Introduction; 5.2 Forward Transit Time t(F); 5.2.1 Components of t(F); 5.2.2 Base Transit Time; 5.2.3 Emitter Delay; 5.2.4 Collector/Base Depletion Region Transit Time; 5.2.5 Emitter/Base Depletion Region Delay; 5.3 Cut-off Frequency f(T)
5.4 Maximum Oscillation Frequency f(max)5.5 Kirk Effect; 5.6 Base, Collector and Emitter Resistance; 5.6.1 Base Resistance; 5.6.2 Collector Resistance; 5.7 Emitter/Base and Collector/Base Depletion Capacitance; 5.8 Quasi-saturation; 5.9 Current Crowding; References; 6 Polysilicon Emitters; 6.1 Introduction; 6.2 Basic Fabrication and Operation of Polysilicon Emitters; 6.3 Diffusion in Polysilicon Emitters; 6.4 Influence of the Polysilicon/Silicon Interface; 6.5 Base Current in Polysilicon Emitters; 6.6 Effective Surface Recombination Velocity; 6.7 Emitter Resistance
6.8 Design of Practical Polysilicon Emitters6.8.1 Break-up of the Interfacial Oxide Layer and Epitaxial Regrowth; 6.8.2 Epitaxially Regrown Emitters; 6.8.3 Trade-off between Emitter Resistance and Current Gain in Polysilicon Emitters; 6.8.4 Emitter Plug Effect and in situ Doped Polysilicon Emitters; 6.9 pnp Polysilicon Emitters; References; 7 Properties and Growth of Silicon-Germanium; 7.1 Introduction; 7.2 Materials Properties of Silicon-Germanium; 7.2.1 Pseudomorphic Silicon-Germanium; 7.2.2 Critical Thickness; 7.2.3 Band Structure of Silicon-Germanium
7.3 Physical Properties of Silicon-Germanium
Record Nr. UNINA-9910143229303321
Ashburn Peter  
Hoboken, NJ, : John Wiley & Sons, c2003
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
SiGe heterojunction bipolar transistors [[electronic resource] /] / Peter Ashburn
SiGe heterojunction bipolar transistors [[electronic resource] /] / Peter Ashburn
Autore Ashburn Peter
Pubbl/distr/stampa Hoboken, NJ, : John Wiley & Sons, c2003
Descrizione fisica 1 online resource (288 p.)
Disciplina 621.313
621.3815282
Soggetto topico Bipolar transistors
Silicon
Germanium
ISBN 1-280-26903-0
9786610269037
0-470-09073-1
0-470-09074-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto SiGe Heterojunction Bipolar Transistors; Contents; Preface; Physical Constants and Properties of Silicon and Silicon-Germanium; List of Symbols; 1 Introduction; 1.1 Evolution of Silicon Bipolar Technology; 1.2 Evolution of Silicon-Germanium HBT Technology; 1.3 Operating Principles of the Bipolar Transistor; References; 2 Basic Bipolar Transistor Theory; 2.1 Introduction; 2.2 Components of Base Current; 2.3 Fundamental Equations; 2.3.1 Assumptions; 2.4 Base Current; 2.4.1 Base Current in Shallow Emitters; 2.4.2 Base Current in Deep Emitters; 2.4.3 Recombination Current in the Neutral Base
2.5 Collector Current2.6 Current Gain; 2.7 Gummel Numbers; 3 Heavy Doping Effects; 3.1 Introduction; 3.2 Majority and Minority Carrier Mobility; 3.3 Bandgap Narrowing; 3.4 Minority Carrier Lifetime; 3.5 Gain and Heavy Doping Effects; 3.6 Non-uniform Doping Profiles; References; 4 Second-Order Effects; 4.1 Introduction; 4.2 Low Current Gain; 4.2.1 Recombination via Deep Levels; 4.2.2 Recombination Current in the Forward Biased Emitter/Base Depletion Region; 4.2.3 Generation Current in a Reverse Biased pn Junction; 4.2.4 Origins of Deep Levels in Bipolar Transistors; 4.3 High Current Gain
4.4 Basewidth Modulation4.5 Series Resistance; 4.6 Junction Breakdown; 4.6.1 Punch-through; 4.6.2 Zener Breakdown; 4.6.3 Avalanche Breakdown; 4.6.4 Junction Breakdown in Practice; 4.6.5 Common Base and Common Emitter Breakdown Voltages; 4.6.6 Trade-off between Gain and BV(CEO); References; 5 High-frequency Performance; 5.1 Introduction; 5.2 Forward Transit Time t(F); 5.2.1 Components of t(F); 5.2.2 Base Transit Time; 5.2.3 Emitter Delay; 5.2.4 Collector/Base Depletion Region Transit Time; 5.2.5 Emitter/Base Depletion Region Delay; 5.3 Cut-off Frequency f(T)
5.4 Maximum Oscillation Frequency f(max)5.5 Kirk Effect; 5.6 Base, Collector and Emitter Resistance; 5.6.1 Base Resistance; 5.6.2 Collector Resistance; 5.7 Emitter/Base and Collector/Base Depletion Capacitance; 5.8 Quasi-saturation; 5.9 Current Crowding; References; 6 Polysilicon Emitters; 6.1 Introduction; 6.2 Basic Fabrication and Operation of Polysilicon Emitters; 6.3 Diffusion in Polysilicon Emitters; 6.4 Influence of the Polysilicon/Silicon Interface; 6.5 Base Current in Polysilicon Emitters; 6.6 Effective Surface Recombination Velocity; 6.7 Emitter Resistance
6.8 Design of Practical Polysilicon Emitters6.8.1 Break-up of the Interfacial Oxide Layer and Epitaxial Regrowth; 6.8.2 Epitaxially Regrown Emitters; 6.8.3 Trade-off between Emitter Resistance and Current Gain in Polysilicon Emitters; 6.8.4 Emitter Plug Effect and in situ Doped Polysilicon Emitters; 6.9 pnp Polysilicon Emitters; References; 7 Properties and Growth of Silicon-Germanium; 7.1 Introduction; 7.2 Materials Properties of Silicon-Germanium; 7.2.1 Pseudomorphic Silicon-Germanium; 7.2.2 Critical Thickness; 7.2.3 Band Structure of Silicon-Germanium
7.3 Physical Properties of Silicon-Germanium
Record Nr. UNINA-9910830033303321
Ashburn Peter  
Hoboken, NJ, : John Wiley & Sons, c2003
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
SiGe heterojunction bipolar transistors [[electronic resource] /] / Peter Ashburn
SiGe heterojunction bipolar transistors [[electronic resource] /] / Peter Ashburn
Autore Ashburn Peter
Pubbl/distr/stampa Hoboken, NJ, : John Wiley & Sons, c2003
Descrizione fisica 1 online resource (288 p.)
Disciplina 621.313
621.3815282
Soggetto topico Bipolar transistors
Silicon
Germanium
ISBN 1-280-26903-0
9786610269037
0-470-09073-1
0-470-09074-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto SiGe Heterojunction Bipolar Transistors; Contents; Preface; Physical Constants and Properties of Silicon and Silicon-Germanium; List of Symbols; 1 Introduction; 1.1 Evolution of Silicon Bipolar Technology; 1.2 Evolution of Silicon-Germanium HBT Technology; 1.3 Operating Principles of the Bipolar Transistor; References; 2 Basic Bipolar Transistor Theory; 2.1 Introduction; 2.2 Components of Base Current; 2.3 Fundamental Equations; 2.3.1 Assumptions; 2.4 Base Current; 2.4.1 Base Current in Shallow Emitters; 2.4.2 Base Current in Deep Emitters; 2.4.3 Recombination Current in the Neutral Base
2.5 Collector Current2.6 Current Gain; 2.7 Gummel Numbers; 3 Heavy Doping Effects; 3.1 Introduction; 3.2 Majority and Minority Carrier Mobility; 3.3 Bandgap Narrowing; 3.4 Minority Carrier Lifetime; 3.5 Gain and Heavy Doping Effects; 3.6 Non-uniform Doping Profiles; References; 4 Second-Order Effects; 4.1 Introduction; 4.2 Low Current Gain; 4.2.1 Recombination via Deep Levels; 4.2.2 Recombination Current in the Forward Biased Emitter/Base Depletion Region; 4.2.3 Generation Current in a Reverse Biased pn Junction; 4.2.4 Origins of Deep Levels in Bipolar Transistors; 4.3 High Current Gain
4.4 Basewidth Modulation4.5 Series Resistance; 4.6 Junction Breakdown; 4.6.1 Punch-through; 4.6.2 Zener Breakdown; 4.6.3 Avalanche Breakdown; 4.6.4 Junction Breakdown in Practice; 4.6.5 Common Base and Common Emitter Breakdown Voltages; 4.6.6 Trade-off between Gain and BV(CEO); References; 5 High-frequency Performance; 5.1 Introduction; 5.2 Forward Transit Time t(F); 5.2.1 Components of t(F); 5.2.2 Base Transit Time; 5.2.3 Emitter Delay; 5.2.4 Collector/Base Depletion Region Transit Time; 5.2.5 Emitter/Base Depletion Region Delay; 5.3 Cut-off Frequency f(T)
5.4 Maximum Oscillation Frequency f(max)5.5 Kirk Effect; 5.6 Base, Collector and Emitter Resistance; 5.6.1 Base Resistance; 5.6.2 Collector Resistance; 5.7 Emitter/Base and Collector/Base Depletion Capacitance; 5.8 Quasi-saturation; 5.9 Current Crowding; References; 6 Polysilicon Emitters; 6.1 Introduction; 6.2 Basic Fabrication and Operation of Polysilicon Emitters; 6.3 Diffusion in Polysilicon Emitters; 6.4 Influence of the Polysilicon/Silicon Interface; 6.5 Base Current in Polysilicon Emitters; 6.6 Effective Surface Recombination Velocity; 6.7 Emitter Resistance
6.8 Design of Practical Polysilicon Emitters6.8.1 Break-up of the Interfacial Oxide Layer and Epitaxial Regrowth; 6.8.2 Epitaxially Regrown Emitters; 6.8.3 Trade-off between Emitter Resistance and Current Gain in Polysilicon Emitters; 6.8.4 Emitter Plug Effect and in situ Doped Polysilicon Emitters; 6.9 pnp Polysilicon Emitters; References; 7 Properties and Growth of Silicon-Germanium; 7.1 Introduction; 7.2 Materials Properties of Silicon-Germanium; 7.2.1 Pseudomorphic Silicon-Germanium; 7.2.2 Critical Thickness; 7.2.3 Band Structure of Silicon-Germanium
7.3 Physical Properties of Silicon-Germanium
Record Nr. UNINA-9910841795803321
Ashburn Peter  
Hoboken, NJ, : John Wiley & Sons, c2003
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Silicon-germanium heterojunction bipolar transistors for mm-wave systems : technology, modeling and circuit applications / / editors, Niccolò Rinaldi, Michael Schröter
Silicon-germanium heterojunction bipolar transistors for mm-wave systems : technology, modeling and circuit applications / / editors, Niccolò Rinaldi, Michael Schröter
Pubbl/distr/stampa Gistrup, Denmark ; ; Delft, Netherlands : , : River Publishers, , [2018]
Descrizione fisica 1 online resource (378 pages)
Disciplina 621.381528
Collana River Publishers Series in Electronic Materials and Devices
Soggetto topico Bipolar transistors
Silicon alloys
Soggetto genere / forma Electronic books.
ISBN 87-93519-60-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910480906203321
Gistrup, Denmark ; ; Delft, Netherlands : , : River Publishers, , [2018]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Silicon-germanium heterojunction bipolar transistors for mm-wave systems : technology, modeling and circuit applications / / Niccolò Rinaldi and Niccolò Rinaldi, editors
Silicon-germanium heterojunction bipolar transistors for mm-wave systems : technology, modeling and circuit applications / / Niccolò Rinaldi and Niccolò Rinaldi, editors
Edizione [1st ed.]
Pubbl/distr/stampa Gistrup, Denmark : , : River Publishers, , [2018]
Descrizione fisica 1 online resource (378 pages)
Disciplina 621.381528
Collana River Publishers Series in Electronic Materials and Devices
Soggetto topico Bipolar transistors
Digital communications
Silicon alloys
ISBN 1-00-333951-4
1-000-79128-9
1-003-33951-4
1-000-79440-7
87-93519-60-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910632998403321
Gistrup, Denmark : , : River Publishers, , [2018]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui