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Superionic conductors [[electronic resource] ] : heterostructures and elements of functional electronics based on them / / F.A. Karamov
| Superionic conductors [[electronic resource] ] : heterostructures and elements of functional electronics based on them / / F.A. Karamov |
| Autore | Karamov F. A |
| Pubbl/distr/stampa | Cambridge, : Cambridge International Science Pub., 2008 |
| Descrizione fisica | 1 online resource (230 p.) |
| Disciplina | 621.38152 |
| Soggetto topico |
Superionic conductors
Ions - Migration and velocity |
| ISBN |
1-907343-01-6
1-4416-3888-1 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Contents -- Symbols and abbreviations -- Introduction -- 1. Superionic conductors -- 1.1. Types of superionic conductors -- 1.2. Superionic conductors with a constant composition -- 1.3. Properties of superionic conductors of variable composition-ion-electron conductors -- 1.4. The method of equivalent schemes in examination of relaxation processes at the electrode-superionic conductor interface -- 1.5. Impedance of heterostructures based on superionic conductors -- 1.6. Physical-chemical effects in superionic conductors and structures based on them and prospects for application -- 2. Methods for studying superionic conductors, ion-electron conductors and heterostructures based on them -- 2.1. Measurement method in the direct current regime in structures with superionic conductors -- 2.2. Measurements in the alternating current regime in structures with ionic and electronic conductivity -- 2.3. Methods of measurement of the impedance of heterostructures on the basis of superionic conductors in the infralow frequency range -- 2.4. Functional electrical scheme of experimental equipment for measurement of the parameters of impedance of the infralow frequency range -- 2.5. Main calculations relationships in the measurements of impedance parameters -- 2.6. Evaluation of measurement errors -- 2.7. Measuring system for impedance investigations of infralow frequency range -- 2.8. Technological methods of producing thin film specimens of superionic conductors -- 2.8.1. Vacuum spraying methods -- 2.8.2. Chemical method of producing films of superionic conductors -- 2.8.3. Thick film technology -- 3. Properties of inverse and polarisable heterostructures based on superionic conductors and ion-electron conductors -- 3.1. Methodological problems of selecting the electrode system for impedance investigations.
3.2. Properties of the inverse Ag/RbAg4I5 interface -- 3.3. Main properties of the electrochemical deposited silver layer in contact with the RbAg-4I5 superionic conductor -- 3.4. Impedance of Ag/α, β-AgI heterostructures -- 3.5. Impedance of the inverse heterostructure Ni/Ag2Te/RbAg4I5/Ag2Te/Ni -- 3.6. Parameters of the impedance of Pt/RbAg4I5 polarizable heterostructure -- 3.7. Experimental investigations of Au/RbAg4I5/Ag heterostructures -- 3.8. Measurements of the impedance of the Ni, Ti/RbAg4I5/Ag heterostructures -- 4. Mathematical and physical models of heterostructures based on superionic conductors -- 4.1. Synthesis of mathematical and electrical models of heterostructures with fractional-power frequency dependences of the impedance modulus on frequency - CPAE -- 4.2. Representation of the function of the complex variable of the type s-α with an arbitrary fractional index α in the form of the fractional-rational function -- 4.3. Mathematical and electrical models of metal-superionic conductors heterotransitions on the basis of Foster canonic forms obtained from the realisation of approximating function with fractional exponent -- 4.4. Main calculation relationships for equivalent schemes according to Foster of the first and second kind -- 4.5. Thermodynamic relationships for determining the increase of the charge of a polarisable electrode -- 4.6. Adsorption properties of the heterogeneous surface of the electrode that is in contact with a superionic conductor -- 4.7. Dependence of total adsorption capacitance on the polarisable electrode potential -- 4.8. Geometrical models of electrodes for explaining FPFD-behaviour of impedance dependence -- 4.8.1. Formulation of the problem -- 4.8.2. Model of fractal geometry when describing the CPE behaviour of the impedance of heterostructures. 4.9. Electrical models of the inversed and polarisable interfaces with superionic conductor in the range of low and infralow frequencies -- 5. Functional electronicelements based on constant-composition superionic conductors -- 5.1. Methods of constructing resistance-capacitance structures with distributed parameters -- 5.2. Transfer functions of the resistance-capacitance structure with distributed parameters -- 5.2.1. Frequency characteristics in the high frequency range -- 5.2.2. Analysis of the effect of the volume resistance of the superionic conductor on frequency characteristics -- 5.2.3. Frequency characteristics of the RC structure in the infralow frequency range -- 5.3. Two-electrode resistance-capacitance structures with concentrated parameters on the basis of constant composition superionic conductors -- 5.4. Resistance-capacitance structures with distributed parameters. Resistive layer - thin film of electrode material -- 5.5. Resistance-capacitance structures with distributed parameters. Resistive layer - thin film of the superionic conductor -- 5.6. RC structure with distributed parameters and electrically controlled resistance of the resistive layer -- 5.7. Controlled RC-structure with non-uniformly distributed parameters -- 5.8. A triode based on a constant composition superionic conductor RbAg4I5 -- 5.9 An indicating element based on the superionic conductor RbAg4I5 -- 5.10. Elements realising operations of fractional differentiation and integration on the basis of the CPAE model of heterostructures -- 6. Functional electronic elements based on variable composition superionic conductors -- 6.1. Controlled resistance elements based on ionic-electronic variable composition conductors -- 6.2. Controlled resistance-capacitance structures with the electrically adjustable resistance of the resistive layer. 6.3. Experimental investigations of heterojunctions based on superionic conductors and silicon -- 6.4. Semiconductor element with controlled volt-ampere characteristics. Development principles -- 6.5. Semiconductor element with controlled non-linear volt-ampere characteristics. Design -- 7. Infralow frequency time-setting devices based on superionic conductors -- 7.1. The device of the discrete action integrator based on a superionic conductor -- 7.2. The characteristics of a discrete action integrator -- 7.3. Device for reading information from electrochemical integrators -- 7.4. Generator of low frequency and infralow frequency signals based on discrete integrators -- 7.5. Device for memorizing the time period -- 7.6. Timing device with a programmed operating cycle -- 7.7. Prospects for using integrating elements based on superionic conductors in systems of measuring the thermal energy of local heating systems of flats -- Conclusions -- Appendix 1 -- References. |
| Record Nr. | UNINA-9910814529303321 |
Karamov F. A
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| Cambridge, : Cambridge International Science Pub., 2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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