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VLSI engineering : beyond software engineering / ed. Tosiyasu L. Kunii
| VLSI engineering : beyond software engineering / ed. Tosiyasu L. Kunii |
| Autore | Kunii, Toshiyasu L. |
| Pubbl/distr/stampa | Berlin ; New York : Springer-Verlag, 1984 |
| Descrizione fisica | vi, 308 p. : ill. ; 25 cm. |
| Disciplina | 621.38195835 |
| Soggetto topico |
Electronic digital computers-circuits
Integrated circuits Very large scale integration |
| ISBN | 3540700021 |
| Classificazione | AMS 68-XX |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | en |
| Record Nr. | UNISALENTO-991001479349707536 |
Kunii, Toshiyasu L.
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| Berlin ; New York : Springer-Verlag, 1984 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. del Salento | ||
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VLSI handbook [[electronic resource] /] / edited by Norman G. Einspruch
| VLSI handbook [[electronic resource] /] / edited by Norman G. Einspruch |
| Pubbl/distr/stampa | Orlando, Fla., : Academic Press, 1985 |
| Descrizione fisica | 1 online resource (929 p.) |
| Disciplina | 621.38195835 |
| Altri autori (Persone) | EinspruchNorman G |
| Collana |
Handbooks in science and technology VLSI handbook
Handbooks in science and technology |
| Soggetto topico | Integrated circuits - Very large scale integration |
| ISBN |
1-299-24297-9
0-323-14199-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; VLSI Handbook; Copyright Page; Table of Contents; Contributors; Preface; Acronyms; Chapter 1. Factors Contributing to Increased VLSI Circuit Density; I. Introduction; II. Factors Influencing Circuit Density; Chapter 2. Fundamental Principles of Very Large Scale Integrated Circuit Design; I. Introduction; II. VLSI Design Methodology; III. Elements of VLSI Circuit Design; IV. Basics of Layout Design; V. Future Developments; References; Chapter 3. Design Automation for Integrated Circuits; I. Introduction; II. A Design through Various Levels of Abstraction
III. A Typical Design ProcedureIV. Semicustom Design Methodologies; V. Building of Cell or Macro Library; VI. Semicustom Layout; VII. Comparison between Semicustom Methodologies; VIII. Trends in Design Automation; IX. Conclusion; Glossary; Bibliography; Chapter 4. Computer Tools for Integrated Circuit Design; I. IC Design and Development; II. Applying Computers in the Development Process; III. Availability of CAD Tools; IV. CONCLUSION; References; Chapter 5. VLSI to Go: The Silicon Foundry; I. Introduction; II. The Silicon Foundry Concept; III. The Foundry Interface; IV. Processing V. Post ProcessingVI. CONCLUSION; References; Chapter 6. Manufacturing Process Technology for MOS VLSI; I. Introduction; II. Directions in Process Technology; III. Process Control; References; Chapter 7. Facilities for VLSI Circuit Fabrication; I. Clean Air; II. Water; III. Provision of Other Supplies; IV. Vacuum; V. Waste Disposal; VI. Physical Considerations; VII. Protection of Personnel, Equipment, and Product; VIII. Personnel Efficiency; IX. Facility Management System; References; Chapter 8. MOS VLSI Circuit Technology; I. Introduction; II. MOSFET Structures; III. MOS Circuits IV. Power-Delay Performance of MOS and Bipolar CircuitsV. Conclusion; References; Chapter 9. Bipolar VLSI Circuit Technology; I. Introduction; II. Bipolar Transistors; III. Bipolar Digital Gate Circuits; References; Chapter 10. CMOS VLSI Technology; I. Advantages of Circuit Design with CMOS; II. A State-of-the-Art CMOS Process Flow; III. Problems of Optimization of CMOS Processing; IV. Problems of Interconnects for CMOS; V. Discontinuities in CMOS Technology; Bibliography; Chapter 11. New Directions in Microprocessors; I. Introduction; II. Memory Management; III. Cache; IV. Pipelining V. System TimingVI. Peripheral Controllers; VII. Current Implementations; Chapter 12. VLSI Random Access Memories; I. Introduction; II. Static RAM; III. Dynamic RAM; IV. Specialty RAMs; Glossary; Chapter 13. VLSI Electrically Erasable Programmable Read Only Memory; I. Principle of Operation; II. Programming Characteristics; III. Performance and Reliability; IV. Scaling; List of Symbols; References; Chapter 14. Electrical Transport Properties of Silicon; I. Introduction; II. Definition of Transport: The Transport Equation; III. Conversion between Resistivity and Dopant Density IV. Mobility of Charge Carriers |
| Record Nr. | UNINA-9910786464403321 |
| Orlando, Fla., : Academic Press, 1985 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
VLSI handbook [[electronic resource] /] / edited by Norman G. Einspruch
| VLSI handbook [[electronic resource] /] / edited by Norman G. Einspruch |
| Pubbl/distr/stampa | Orlando, Fla., : Academic Press, 1985 |
| Descrizione fisica | 1 online resource (929 p.) |
| Disciplina | 621.38195835 |
| Altri autori (Persone) | EinspruchNorman G |
| Collana |
Handbooks in science and technology VLSI handbook
Handbooks in science and technology |
| Soggetto topico | Integrated circuits - Very large scale integration |
| ISBN |
1-299-24297-9
0-323-14199-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; VLSI Handbook; Copyright Page; Table of Contents; Contributors; Preface; Acronyms; Chapter 1. Factors Contributing to Increased VLSI Circuit Density; I. Introduction; II. Factors Influencing Circuit Density; Chapter 2. Fundamental Principles of Very Large Scale Integrated Circuit Design; I. Introduction; II. VLSI Design Methodology; III. Elements of VLSI Circuit Design; IV. Basics of Layout Design; V. Future Developments; References; Chapter 3. Design Automation for Integrated Circuits; I. Introduction; II. A Design through Various Levels of Abstraction
III. A Typical Design ProcedureIV. Semicustom Design Methodologies; V. Building of Cell or Macro Library; VI. Semicustom Layout; VII. Comparison between Semicustom Methodologies; VIII. Trends in Design Automation; IX. Conclusion; Glossary; Bibliography; Chapter 4. Computer Tools for Integrated Circuit Design; I. IC Design and Development; II. Applying Computers in the Development Process; III. Availability of CAD Tools; IV. CONCLUSION; References; Chapter 5. VLSI to Go: The Silicon Foundry; I. Introduction; II. The Silicon Foundry Concept; III. The Foundry Interface; IV. Processing V. Post ProcessingVI. CONCLUSION; References; Chapter 6. Manufacturing Process Technology for MOS VLSI; I. Introduction; II. Directions in Process Technology; III. Process Control; References; Chapter 7. Facilities for VLSI Circuit Fabrication; I. Clean Air; II. Water; III. Provision of Other Supplies; IV. Vacuum; V. Waste Disposal; VI. Physical Considerations; VII. Protection of Personnel, Equipment, and Product; VIII. Personnel Efficiency; IX. Facility Management System; References; Chapter 8. MOS VLSI Circuit Technology; I. Introduction; II. MOSFET Structures; III. MOS Circuits IV. Power-Delay Performance of MOS and Bipolar CircuitsV. Conclusion; References; Chapter 9. Bipolar VLSI Circuit Technology; I. Introduction; II. Bipolar Transistors; III. Bipolar Digital Gate Circuits; References; Chapter 10. CMOS VLSI Technology; I. Advantages of Circuit Design with CMOS; II. A State-of-the-Art CMOS Process Flow; III. Problems of Optimization of CMOS Processing; IV. Problems of Interconnects for CMOS; V. Discontinuities in CMOS Technology; Bibliography; Chapter 11. New Directions in Microprocessors; I. Introduction; II. Memory Management; III. Cache; IV. Pipelining V. System TimingVI. Peripheral Controllers; VII. Current Implementations; Chapter 12. VLSI Random Access Memories; I. Introduction; II. Static RAM; III. Dynamic RAM; IV. Specialty RAMs; Glossary; Chapter 13. VLSI Electrically Erasable Programmable Read Only Memory; I. Principle of Operation; II. Programming Characteristics; III. Performance and Reliability; IV. Scaling; List of Symbols; References; Chapter 14. Electrical Transport Properties of Silicon; I. Introduction; II. Definition of Transport: The Transport Equation; III. Conversion between Resistivity and Dopant Density IV. Mobility of Charge Carriers |
| Record Nr. | UNINA-9910821857503321 |
| Orlando, Fla., : Academic Press, 1985 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
