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Leakage current and defect characterization of short channel MOSFETs / / Guntrade Roll
| Leakage current and defect characterization of short channel MOSFETs / / Guntrade Roll |
| Autore | Roll Guntrade |
| Pubbl/distr/stampa | Berlin : , : Logos Verlag Berlin, , [2014] |
| Descrizione fisica | 1 online resource (242 pages) |
| Disciplina | 621.3815284 |
| Collana | Research at NaMLab |
| Soggetto topico | Metal oxide semiconductor field-effect transistors |
| Soggetto genere / forma | Electronic books. |
| ISBN | 3-8325-9666-6 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910466968503321 |
Roll Guntrade
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| Berlin : , : Logos Verlag Berlin, , [2014] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Leakage current and defect characterization of short channel MOSFETs / / Guntrade Roll
| Leakage current and defect characterization of short channel MOSFETs / / Guntrade Roll |
| Autore | Roll Guntrade |
| Pubbl/distr/stampa | Berlin : , : Logos Verlag Berlin, , [2014] |
| Descrizione fisica | 1 online resource (242 pages) |
| Disciplina | 621.3815284 |
| Collana | Research at NaMLab |
| Soggetto topico | Metal oxide semiconductor field-effect transistors |
| ISBN | 3-8325-9666-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910795584703321 |
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Roll Guntrade
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| Berlin : , : Logos Verlag Berlin, , [2014] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Leakage current and defect characterization of short channel MOSFETs / / Guntrade Roll
| Leakage current and defect characterization of short channel MOSFETs / / Guntrade Roll |
| Autore | Roll Guntrade |
| Pubbl/distr/stampa | Berlin : , : Logos Verlag Berlin, , [2014] |
| Descrizione fisica | 1 online resource (242 pages) |
| Disciplina | 621.3815284 |
| Collana | Research at NaMLab |
| Soggetto topico | Metal oxide semiconductor field-effect transistors |
| ISBN | 3-8325-9666-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910822454603321 |
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Roll Guntrade
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| Berlin : , : Logos Verlag Berlin, , [2014] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Monoelements : properties and applications / / Inamuddin [and three others]
| Monoelements : properties and applications / / Inamuddin [and three others] |
| Pubbl/distr/stampa | Hoboken, New Jersey ; ; Beverly, Massachusetts : , : John Wiley & Sons, Incorporated : , : Scrivener Publishing LLC, , [2020] |
| Descrizione fisica | 1 online resource (352 pages) : illustrations |
| Disciplina | 621.3815284 |
| Soggetto topico |
Materials science
Semiconductors Monomers |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-119-65527-7
1-119-65528-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910555163603321 |
| Hoboken, New Jersey ; ; Beverly, Massachusetts : , : John Wiley & Sons, Incorporated : , : Scrivener Publishing LLC, , [2020] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Monoelements : properties and applications / / Inamuddin [and three others]
| Monoelements : properties and applications / / Inamuddin [and three others] |
| Pubbl/distr/stampa | Hoboken, New Jersey ; ; Beverly, Massachusetts : , : John Wiley & Sons, Incorporated : , : Scrivener Publishing LLC, , [2020] |
| Descrizione fisica | 1 online resource (352 pages) : illustrations |
| Disciplina | 621.3815284 |
| Soggetto topico |
Materials science
Semiconductors Monomers |
| ISBN |
1-119-65527-7
1-119-65528-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910829946803321 |
| Hoboken, New Jersey ; ; Beverly, Massachusetts : , : John Wiley & Sons, Incorporated : , : Scrivener Publishing LLC, , [2020] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
MOSFET modeling for circuit analysis and design [[electronic resource] /] / Carlos Galup-Montoro, Márcio Cherem Schneider
| MOSFET modeling for circuit analysis and design [[electronic resource] /] / Carlos Galup-Montoro, Márcio Cherem Schneider |
| Autore | Galup-Montoro Carlos |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, NJ, : World Scientific, c2007 |
| Descrizione fisica | 1 online resource (445 p.) |
| Disciplina | 621.3815284 |
| Altri autori (Persone) | SchneiderMárcio Cherem |
| Collana | International series on advances in solid state electronics and technology |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors - Mathematical models
Field-effect transistors - Mathematical models |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-12087-1
9786611120870 981-270-759-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension
Appendix B Electrostatics in SemiconductorsAppendix C Drift-diffusion Current Model; Appendix D Continuity Equations; Appendix E Basics of pn Junctions; Appendix F Hall-Shockley-Read (HSR) Statistics; Appendix G Interface Trap Capacitance; Index |
| Record Nr. | UNINA-9910450680703321 |
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Galup-Montoro Carlos
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| Singapore ; ; Hackensack, NJ, : World Scientific, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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MOSFET modeling for circuit analysis and design [[electronic resource] /] / Carlos Galup-Montoro, Márcio Cherem Schneider
| MOSFET modeling for circuit analysis and design [[electronic resource] /] / Carlos Galup-Montoro, Márcio Cherem Schneider |
| Autore | Galup-Montoro Carlos |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, NJ, : World Scientific, c2007 |
| Descrizione fisica | 1 online resource (445 p.) |
| Disciplina | 621.3815284 |
| Altri autori (Persone) | SchneiderMárcio Cherem |
| Collana | International series on advances in solid state electronics and technology |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors - Mathematical models
Field-effect transistors - Mathematical models |
| ISBN |
1-281-12087-1
9786611120870 981-270-759-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension
Appendix B Electrostatics in SemiconductorsAppendix C Drift-diffusion Current Model; Appendix D Continuity Equations; Appendix E Basics of pn Junctions; Appendix F Hall-Shockley-Read (HSR) Statistics; Appendix G Interface Trap Capacitance; Index |
| Record Nr. | UNINA-9910784046503321 |
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Galup-Montoro Carlos
|
||
| Singapore ; ; Hackensack, NJ, : World Scientific, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
MOSFET modeling for circuit analysis and design / / Carlos Galup-Montoro, Márcio Cherem Schneider
| MOSFET modeling for circuit analysis and design / / Carlos Galup-Montoro, Márcio Cherem Schneider |
| Autore | Galup-Montoro Carlos |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, NJ, : World Scientific, c2007 |
| Descrizione fisica | 1 online resource (445 p.) |
| Disciplina | 621.3815284 |
| Altri autori (Persone) | SchneiderMárcio Cherem |
| Collana | International series on advances in solid state electronics and technology |
| Soggetto topico |
Metal oxide semiconductor field-effect transistors - Mathematical models
Field-effect transistors - Mathematical models |
| ISBN |
1-281-12087-1
9786611120870 981-270-759-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension
Appendix B Electrostatics in SemiconductorsAppendix C Drift-diffusion Current Model; Appendix D Continuity Equations; Appendix E Basics of pn Junctions; Appendix F Hall-Shockley-Read (HSR) Statistics; Appendix G Interface Trap Capacitance; Index |
| Record Nr. | UNINA-9910809418503321 |
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Galup-Montoro Carlos
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| Singapore ; ; Hackensack, NJ, : World Scientific, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanowire field effect transistors : principles and applications / / Dae Mann Kim, Yoon-Ha Jeong, editors
| Nanowire field effect transistors : principles and applications / / Dae Mann Kim, Yoon-Ha Jeong, editors |
| Edizione | [1st ed. 2014.] |
| Pubbl/distr/stampa | New York : , : Springer, , 2014 |
| Descrizione fisica | 1 online resource (vi, 290 pages) : illustrations (some color) |
| Disciplina |
620.5
621.3815284 |
| Collana | Gale eBooks |
| Soggetto topico |
Nanostructured materials
Field-effect transistors |
| ISBN | 1-4614-8124-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Quantum Wire and Sub-Bands -- Carrier Concentration and Transport -- P-N Junction Diode: I-V Behavior and Applications -- Silicon Nanowire Field Effect Transistor -- Fabrication of Nanowires and their Applications -- Characterization of Nanowire Devices under Electrostatic Discharge Stress Conditions -- Green Energy Devices -- Nanowire Field Effect Transistors in Optoelectronics -- Nanowire BioFETs: An Overview -- Lab On a Wire: Application of Silicon Nanowires for Nanoscience and Biotechnology -- Nanowire FET Circuit Design – An Overview. |
| Record Nr. | UNINA-9910299755603321 |
| New York : , : Springer, , 2014 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Novel three-state quantum dot gate field effect transistor : fabrication, modeling and applications / / Supriya Karmakar
| Novel three-state quantum dot gate field effect transistor : fabrication, modeling and applications / / Supriya Karmakar |
| Autore | Karmakar Supriya |
| Edizione | [1st ed. 2014.] |
| Pubbl/distr/stampa | New Delhi : , : Springer, , 2014 |
| Descrizione fisica | 1 online resource (xiv, 134 pages) : illustrations (some color) |
| Disciplina | 621.3815284 |
| Collana | Gale eBooks |
| Soggetto topico | Field-effect transistors |
| ISBN | 81-322-1635-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction: Multi State Devices and Logic -- Quantum Dot Gate Field Effect Transistor Device Structures -- Quantum Dot Gate Field Effect Transistors Fabrication and Characterization -- Quantum DOT Gate Field Effect Transistors Theory and Device Modeling -- Quantum Dot Gate NMOS Inverter -- Quantum Dot Gate Field Effect Transistor (QDGFET): Circuit Model and Ternary Logic Inverter -- Analog-to-Digital Converter (ADC) and Digital-to-Analog Converter (DAC) Using Quantum DOT Gate Field Effect Transistor (QDGFET) -- Performance in SUB-25nm Range -- Conclusions. |
| Record Nr. | UNINA-9910299709003321 |
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Karmakar Supriya
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| New Delhi : , : Springer, , 2014 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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