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GaN transistors for efficient power conversion / / Alex Lidow, Michael de Rooij, Johan Strydom, David Reusch, John Glaser
| GaN transistors for efficient power conversion / / Alex Lidow, Michael de Rooij, Johan Strydom, David Reusch, John Glaser |
| Autore | Lidow Alex |
| Edizione | [Third edition.] |
| Pubbl/distr/stampa | Hoboken, NJ : , : John Wiley & Sons, Inc., , 2020 |
| Disciplina | 621.3815284 |
| Soggetto topico |
Field-effect transistors - Materials
Power transistors - Materials Gallium nitride Transistors à effet de champ - Matériaux Transistors de puissance - Matériaux Nitrure de gallium |
| ISBN |
1-5231-2819-4
1-119-59440-5 1-119-59437-5 1-119-59442-1 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910830227303321 |
Lidow Alex
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| Hoboken, NJ : , : John Wiley & Sons, Inc., , 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Graphene Field-Effect Transistors : Advanced Bioelectronic Devices for Sensing Applications
| Graphene Field-Effect Transistors : Advanced Bioelectronic Devices for Sensing Applications |
| Autore | Azzaroni Omar |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Newark : , : John Wiley & Sons, Incorporated, , 2023 |
| Descrizione fisica | 1 online resource (446 pages) |
| Disciplina | 621.3815284 |
| Altri autori (Persone) | KnollWolfgang |
| ISBN |
3-527-84337-X
3-527-84339-6 3-527-84338-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover -- Title Page -- Copyright -- Contents -- Foreword -- Preface -- Chapter 1 2D Electronic Circuits for Sensing Applications -- 1.1 Introduction -- 1.2 Graphene Inductors -- 1.2.1 Modeling of Graphene Inductors -- 1.3 Graphene Capacitors -- 1.3.1 Modeling Graphene Capacitors -- 1.4 2D Material Transistors -- 1.4.1 Most Common Topologies for Transistors -- 1.4.2 Modeling of 2D Materials-Based Transistors -- 1.5 2D Material Diodes -- 1.5.1 Most Common Topologies -- 1.5.2 Modeling of 2D Materials-Based Diodes -- 1.6 Graphene Devices -- 1.6.1 Graphene Frequency Multipliers -- 1.6.2 Graphene Mixers -- 1.6.3 Graphene Oscillators -- 1.6.3.1 Ring Oscillators -- 1.6.3.2 LC Tank Oscillators -- 1.7 Conclusion -- References -- Chapter 2 Large Graphene Oxide for Sensing Applications -- 2.1 Graphene Oxide (GO) -- 2.2 GO as Biosensors -- 2.3 Large GO -- 2.4 Mechanism of Large GO via Modified Hummers Method -- 2.5 Large GO (Modified Hummers Method) Biosensors -- 2.6 Mechanism of Large GO via Reduced GO Growth -- 2.7 Large GO (Reduced GO Growth) Biosensors -- 2.8 Conclusion -- 2.9 Further Developments -- References -- Chapter 3 Solution-Gated Reduced Graphene Oxide FETs: Device Fabrication and Biosensors Applications -- 3.1 Introduction -- 3.2 Graphene, Graphene Oxide, and Reduced Graphene Oxide -- 3.2.1 Chemical Reduction -- 3.2.2 Thermal Reduction -- 3.2.3 Electrochemical Reduction -- 3.3 rGO-Based Solution-Gated FETs -- 3.3.1 Manufacturing Strategies -- 3.4 Applications of rGO SG-FETs as Biosensors -- 3.4.1 rGO Functionalization -- 3.4.2 Enzymatic Biosensors -- 3.4.3 Affinity Biosensors -- 3.4.4 Debye Length Screening and How to Overcome It -- 3.5 Final Remarks and Challenges -- Acknowledgments -- References -- Chapter 4 Graphene-Based Electronic Biosensors for Disease Diagnostics -- 4.1 Introduction -- 4.1.1 A Promise for Diagnostics.
4.1.2 Principle of Graphene FET Sensor -- 4.2 Device Fabrication Process -- 4.2.1 Graphene Synthesis -- 4.2.2 Graphene Transfer Over Substrates -- 4.2.3 Fabrication of GFET -- 4.2.4 New Developments -- 4.3 Functionalization and Passivation -- 4.3.1 Probe Molecules -- 4.3.2 Immobilization of Probe Molecules -- 4.3.3 Debye Length -- 4.3.4 Passivation -- 4.4 CVD GFETs for Diagnostics -- 4.4.1 Graphene-Based FET Biosensors for Nucleic Acids -- 4.4.2 Graphene-Based FET Biosensors for Antibody-Antigen Interactions -- 4.4.3 Graphene-Based FET Biosensors for Enzymatic Biosensors -- 4.4.4 Graphene-Based FET Biosensors for Sensing of Small Ions -- 4.5 Discussion -- 4.5.1 Summary -- 4.5.2 Challenges -- 4.5.3 Future Perspectives -- References -- Chapter 5 Graphene Field-Effect Transistors: Advanced Bioelectronic Devices for Sensing Applications -- 5.1 Introduction -- 5.1.1 Bioelectronic Nose Using Olfactory Receptor-Conjugated Graphene -- 5.1.2 Bioelectronics for Diagnosis Using Bioprobe-Modified Graphene -- 5.1.3 Biosensors for Environmental Component Monitoring Using Graphene -- 5.2 Conclusion -- Acknowledgments -- References -- Chapter 6 Thin-Film Transistors Based on Reduced Graphene Oxide for Biosensing -- 6.1 Introduction -- 6.2 Working Principle of TFT-Based Biosensing -- 6.3 TFTs Based on rGO for Biosensing -- 6.3.1 Protein Detection -- 6.3.2 Metal-Ion Detection -- 6.3.3 Nucleic Acid Detection -- 6.3.4 Small Biomolecular Biosensor -- 6.3.5 Living-Cell Biosensor -- 6.3.6 Gas Detection -- 6.4 Conclusion -- References -- Chapter 7 Towards Graphene-FET Health Sensors: Hardware and Implementation Considerations -- 7.1 Introduction to Health Sensing -- 7.2 Graphene-FET in Liquid for Sensing -- 7.2.1 Graphene Transistors -- 7.2.2 Graphene Hall Structures in Liquid -- 7.2.3 Graphene Membrane Transistors -- 7.3 Device Implementation Considerations. 7.3.1 Hardware and Instrumentation -- 7.3.2 Biostability and Biocompatibility -- 7.3.3 Medical Imaging Compatibility -- References -- Chapter 8 Quadratic Fit Analysis of the Nonlinear Transconductance of Disordered Bilayer Graphene Field-Effect Biosensors Functionalized with Pyrene Derivatives -- 8.1 Introduction -- 8.2 Fabrication of Graphene-Based Field-Effect Biosensors -- 8.3 Fundamental Sensing Parameters of Graphene-Based Field-Effect Biosensors -- 8.4 Disordered Bilayer Graphene Field-Effect Biosensors Functionalized with Pyrene Derivatives -- 8.5 Quadratic Fit Analysis of the Nonlinear Transconductance of Disordered Bilayer Graphene Field-Effect Biosensors -- 8.6 Conclusion -- Acknowledgment -- References -- Chapter 9 Theoretical and Experimental Characterization of Molecular Self-Assembly on Graphene Films -- 9.1 Introduction -- 9.2 Experimental Tools to Characterize Molecular Functionalization of Graphene -- 9.2.1 Considering the Three Distinct Techniques Available for Functionalizing Graphene Are the Outcomes of the Three Functionalization Techniques Consistent, Similar, Reproducible Across all Three Techniques? -- 9.2.2 What Tools and Methods Are Available to Perform Such a Characterization of Molecular Self-Assembly Across the Nano to Macro Scale? -- 9.3 Atomistic Insights to Guide Molecular Functionalization of Graphene -- References -- Chapter 10 The Holy Grail of Surface Chemistry of C VD Graphene: Effect on Sensing of cTNI as Model Analyte -- 10.1 Introduction -- 10.2 General Overview of C VD Graphene Production, Substrate Transfer and Characterization -- 10.3 Evaluation of Graphene Topographical Quality -- 10.4 CVD Graphene for FET-Based Sensing -- 10.4.1 Diazonium Chemistry on CVD Graphene -- 10.4.2 Pyrene Chemistry on CVD Graphene -- 10.5 Conclusion -- References. Chapter 11 Sensing Mechanisms in Graphene Field-Effect Transistors Operating in Liquid -- 11.1 Introduction -- 11.2 Field-Effect Operation in Liquid Compared to Operation in Air -- 11.3 Caveats When Operating FETs in Liquid -- 11.4 Graphene FETs in Liquid -- 11.5 Measurement Modes -- 11.6 Using FETs for Sensing in Liquid - Sensing Mechanisms -- 11.7 The Electrochemical Perspective -- 11.8 The GLI and pH Sensing -- 11.9 Detection of Nucleic Acids -- 11.10 Other Examples -- 11.11 Concluding Remarks -- References -- Chapter 12 Surface Modification Strategies to Increase the Sensing Length in Electrolyte-Gated Graphene Field-Effect Transistors -- 12.1 Introduction -- 12.2 Ion-Exclusion and Donnan Potential -- 12.3 Surface Modification with Polymer Films -- 12.4 Surface Modification with Lipid Layers -- 12.5 Surface Modification with Mesoporous Materials -- 12.6 Kinetic Cost of Extending the Sensing Length -- 12.7 Conclusions -- References -- Chapter 13 Hybridized Graphene Field-Effect Transistors for Gas Sensing Applications -- 13.1 Introduction -- 13.2 Graphene -- 13.3 Graphene FET -- 13.4 Graphene in Gas Sensing -- 13.5 Graphene FET for Gas Sensing -- 13.6 Hybrid Graphene FET for Gas Sensing -- 13.7 Conclusion -- Acknowledgments -- References -- Chapter 14 Polyelectrolyte-Enzyme Assemblies Integrated into Graphene Field-Effect Transistors for Biosensing Applications -- 14.1 Introduction -- 14.2 Field-Effect Transistors Based on Reduced Graphene Oxide -- 14.3 Enzyme-Based GFET Sensors Fabricated via Layer-by-Layer Assembly -- 14.3.1 Layer-by-Layer (LbL) Assemblies of Polyethylenimine and Urease onto Reduced Graphene-Oxide-Based Field-Effect Transistors (rGO FETs) for the Detection of Urea -- 14.3.2 Ultrasensitive Sensing Through Enzymatic Cascade Reactions on Graphene-Based FETs -- 14.4 Conclusions -- References. Chapter 15 Graphene Field-Effect Transistor Biosensor for Detection of Heart Failure-Related Biomarker in Whole Blood -- 15.1 Introduction -- 15.2 Experimental Systems and Procedures -- 15.2.1 Fabrication of GFET Sensor -- 15.2.2 Decoration of Platinum Nanoparticles -- 15.2.3 Surface Functionalization -- 15.2.4 Immunodetection in Whole Blood -- 15.2.5 Electrical Measurements -- 15.3 Sensing Principle of GFET for BNP Detection -- 15.4 Device Characterization -- 15.5 Sensing Performance -- 15.5.1 Stability and Reproducibility -- 15.5.2 Selectivity -- 15.5.3 Sensitivity -- 15.6 Clinical Application Prospects -- 15.7 Advantages, Limitations, and Outlook of the FET-Based BNP Assay -- References -- Chapter 16 Enzymatic Biosensors Based on the Electrochemical Functionalization of Graphene Field-Effect Transistors with Conducting Polymers -- 16.1 Introduction -- 16.2 Functionalization of Graphene Transistors with Poly(3-amino-benzylamine-co-aniline) Nanofilms -- 16.3 Construction of Acetylcholine Biosensors Based on GFET Devices Functionalized with Electropolymerized Poly(3-amino-benzylamine-co-aniline) Nanofilms -- 16.4 Glucose Detection by Graphene Field-Effect Transistors Functionalized with Electropolymerized Poly(3-amino-benzylamine-co-aniline) Nanofilms -- 16.5 Conclusions -- References -- Chapter 17 Graphene Field-Effect Transistors for Sensing Stress and Fatigue Biomarkers -- 17.1 Introduction -- 17.2 Molecular Biomarkers -- 17.3 Graphene Field-Effect Transistor Based Biosensors -- 17.3.1 Graphene -- 17.3.2 Structure of Graphene Field-Effect Transistors -- 17.3.3 Sensing Mechanism of GFET Biosensors -- 17.4 GFET Biosensor Fabrication -- 17.4.1 Graphene Production -- 17.4.2 Device Fabrication -- 17.4.3 Graphene Functionalization -- 17.5 GFET-Based Stress and Fatigue Biosensors -- 17.6 Flexible, Wearable GFET Biosensors, and Biosensor Systems. 17.7 Current Challenges and Future Perspective. |
| Record Nr. | UNINA-9910830375003321 |
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Azzaroni Omar
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| Newark : , : John Wiley & Sons, Incorporated, , 2023 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets / / by María Ángela Pampillón Arce
| Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets / / by María Ángela Pampillón Arce |
| Autore | Pampillón Arce María Ángela |
| Edizione | [1st ed. 2017.] |
| Pubbl/distr/stampa | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2017 |
| Descrizione fisica | 1 online resource (XXIII, 164 p. 116 illus., 6 illus. in color.) |
| Disciplina | 621.3815284 |
| Collana | Springer Theses, Recognizing Outstanding Ph.D. Research |
| Soggetto topico |
Surfaces (Physics)
Interfaces (Physical sciences) Thin films Nanotechnology Electronic circuits Surface and Interface Science, Thin Films Electronic Circuits and Devices Nanotechnology and Microengineering |
| ISBN | 3-319-66607-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction -- Fabrication Techniques -- Characterization Techniques -- Thermal Oxidation of Gd2o3 -- Plasma Oxidation of Gd2o3 and Sc2o3 -- Gadolinium Scandate -- Interface Scavenging -- Gd2o3 on Inp Substrates -- Conclusions and Future Work. |
| Record Nr. | UNINA-9910254588603321 |
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Pampillón Arce María Ángela
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| Cham : , : Springer International Publishing : , : Imprint : Springer, , 2017 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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HEMT technology and applications / / editors, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen
| HEMT technology and applications / / editors, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen |
| Pubbl/distr/stampa | Singapore : , : Springer, , [2023] |
| Descrizione fisica | 1 online resource (246 pages) |
| Disciplina | 621.3815284 |
| Collana | Springer tracts in mechanical engineering |
| Soggetto topico | Modulation-doped field-effect transistors |
| ISBN | 981-19-2165-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910627239303321 |
| Singapore : , : Springer, , [2023] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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HEMTs and HBTs : devices, fabrication, and circuits / Fazal Ali, Aditya Gupta editors
| HEMTs and HBTs : devices, fabrication, and circuits / Fazal Ali, Aditya Gupta editors |
| Pubbl/distr/stampa | Boston ; London, : Artech house, c1991 |
| Descrizione fisica | XII, 377 p. : ill. ; 24 cm. |
| Disciplina |
621.3815
621.3815284 |
| Collana | The Artech House microwave library |
| Soggetto topico | Transistori a effetto di campo |
| ISBN | 0890064016 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | HEMTs & HBTs. - |
| Record Nr. | UNISANNIO-MIL0075214 |
| Boston ; London, : Artech house, c1991 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. del Sannio | ||
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IEEE standard for test methods for the characterization of organic transistors and materials / / Institute of Electrical and Electronics Engineers
| IEEE standard for test methods for the characterization of organic transistors and materials / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | New York, NY : , : IEEE, , 2004 |
| Descrizione fisica | 1 online resource (vi, 13 pages) |
| Disciplina | 621.3815284 |
| Soggetto topico |
Field-effect transistors
Organic semiconductors |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | IEEE Std 1620-2004 |
| Record Nr. | UNINA-9910147230703321 |
| New York, NY : , : IEEE, , 2004 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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IEEE standard for test methods for the characterization of organic transistors and materials / / Institute of Electrical and Electronics Engineers
| IEEE standard for test methods for the characterization of organic transistors and materials / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | New York, NY : , : IEEE, , 2004 |
| Descrizione fisica | 1 online resource (vi, 13 pages) |
| Disciplina | 621.3815284 |
| Soggetto topico |
Field-effect transistors
Organic semiconductors |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | IEEE Std 1620-2004 |
| Record Nr. | UNISA-996278279303316 |
| New York, NY : , : IEEE, , 2004 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz / / vorgelegt von M. Eng. and Tech. Ksenia Nosaeva
| Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz / / vorgelegt von M. Eng. and Tech. Ksenia Nosaeva |
| Autore | Nosaeva Ksenia |
| Edizione | [1. Auflage.] |
| Pubbl/distr/stampa | Gottingen, [Germany] : , : Cuvillier Verlag, , 2016 |
| Descrizione fisica | 1 online resource (155 pages) : illustrations (some color), tables, graphs |
| Disciplina | 621.3815284 |
| Collana | Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut fur Hochstfrequenztechnik |
| Soggetto topico | Modulation-doped field-effect transistors |
| Soggetto genere / forma | Electronic books. |
| ISBN | 3-7369-8287-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910511640503321 |
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Nosaeva Ksenia
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| Gottingen, [Germany] : , : Cuvillier Verlag, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz / / vorgelegt von M. Eng. and Tech. Ksenia Nosaeva
| Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz / / vorgelegt von M. Eng. and Tech. Ksenia Nosaeva |
| Autore | Nosaeva Ksenia |
| Edizione | [1. Auflage.] |
| Pubbl/distr/stampa | Gottingen, [Germany] : , : Cuvillier Verlag, , 2016 |
| Descrizione fisica | 1 online resource (155 pages) : illustrations (some color), tables, graphs |
| Disciplina | 621.3815284 |
| Collana | Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut fur Hochstfrequenztechnik |
| Soggetto topico | Modulation-doped field-effect transistors |
| ISBN | 3-7369-8287-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910794942703321 |
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Nosaeva Ksenia
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| Gottingen, [Germany] : , : Cuvillier Verlag, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz / / vorgelegt von M. Eng. and Tech. Ksenia Nosaeva
| Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz / / vorgelegt von M. Eng. and Tech. Ksenia Nosaeva |
| Autore | Nosaeva Ksenia |
| Edizione | [1. Auflage.] |
| Pubbl/distr/stampa | Gottingen, [Germany] : , : Cuvillier Verlag, , 2016 |
| Descrizione fisica | 1 online resource (155 pages) : illustrations (some color), tables, graphs |
| Disciplina | 621.3815284 |
| Collana | Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut fur Hochstfrequenztechnik |
| Soggetto topico | Modulation-doped field-effect transistors |
| ISBN | 3-7369-8287-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910821367203321 |
|
Nosaeva Ksenia
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| Gottingen, [Germany] : , : Cuvillier Verlag, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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