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Device Physics, Modeling, Technology, and Analysis for Silicon MESFET / / by Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry
| Device Physics, Modeling, Technology, and Analysis for Silicon MESFET / / by Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry |
| Autore | Amiri Iraj Sadegh |
| Edizione | [1st ed. 2019.] |
| Pubbl/distr/stampa | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2019 |
| Descrizione fisica | 1 online resource (125 pages) |
| Disciplina | 621.3815284 |
| Soggetto topico |
Electronic circuits
Electronics Microelectronics Circuits and Systems Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation |
| ISBN | 3-030-04513-7 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Chapter 1. Invention and Evaluation of Transistors and Integrated Circuits -- Chapter 2. General overview of the basic structure and operation of a typical silicon on insulator metal-semiconductor field effect transistor SOI-MESFET -- Chapter 3. Modeling of Classical SOI-MESFET -- Chapter 4. Design and modeling of triple-material gate SOI-MESFET -- Chapter 5. Three-dimensional analytical model of the non-classical three-gate SOI-MESFET -- Chapter 6. Analytical investigation of subthreshold performance of SOI-MESFET devices -- Chapter 7. Future works on Silicon-on-insulator metal semiconductor field effect transistors (SOI-MESFETs). |
| Record Nr. | UNINA-9910337653803321 |
Amiri Iraj Sadegh
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| Cham : , : Springer International Publishing : , : Imprint : Springer, , 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Different types of field-effect transistors : theory and applications / / edited by Momčilo Pejović, Milić M. Pejovic
| Different types of field-effect transistors : theory and applications / / edited by Momčilo Pejović, Milić M. Pejovic |
| Pubbl/distr/stampa | Rijeka, Croatia : , : IntechOpen, , [2017] |
| Descrizione fisica | 1 online resource (192 pages) |
| Disciplina | 621.3815284 |
| Soggetto topico | Field-effect transistors |
| ISBN |
953-51-4804-4
953-51-3176-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Different types of field-effect transistors |
| Record Nr. | UNINA-9910251429703321 |
| Rijeka, Croatia : , : IntechOpen, , [2017] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Differentiated layout styles for MOSFETs : electrical behavior in harsh environments / / Salvador Pinillos Gimenez and Egon Henrique Salerno Galembeck
| Differentiated layout styles for MOSFETs : electrical behavior in harsh environments / / Salvador Pinillos Gimenez and Egon Henrique Salerno Galembeck |
| Autore | Gimenez Salvador Pinillos <1962-> |
| Edizione | [1st ed. 2023.] |
| Pubbl/distr/stampa | Cham, Switzerland : , : Springer Nature Switzerland AG, , [2023] |
| Descrizione fisica | 1 online resource (216 pages) |
| Disciplina | 621.3815284 |
| Soggetto topico | Metal oxide semiconductor field-effect transistors |
| ISBN |
9783031290862
9783031290855 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Chapter 1. Introduction -- Chapter 2. Basic concepts of the semiconductor physics -- Chapter 3. The electrical characteristics of the semiconductor at high temperatures -- Chapter 4. The MOSFET -- Chapter 5. The First Generation of the Unconventional Layout Styles for MOSFETs -- Chapter 6. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 7. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 8. The High Temperature Effects in Electrical Parameters of Mosfets and the Results Obtained of the First and Second Generation. |
| Record Nr. | UNINA-9910720089103321 |
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Gimenez Salvador Pinillos <1962->
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| Cham, Switzerland : , : Springer Nature Switzerland AG, , [2023] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Electrical and thermal characterization of MESFETs, HEMTs, and HBTs / Robert Anholt
| Electrical and thermal characterization of MESFETs, HEMTs, and HBTs / Robert Anholt |
| Autore | Anholt, Robert |
| Pubbl/distr/stampa | Boston [etc.], : Artech House, ©1995 |
| Descrizione fisica | X, 310 p. ; 24 cm. |
| Disciplina |
621.3815
621.3815284 |
| Collana | The Artech House microwave library |
| Soggetto topico | Transistori a effetto di campo - Modelli matematici |
| ISBN | 089006749X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISANNIO-UBO1311066 |
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Anholt, Robert
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| Boston [etc.], : Artech House, ©1995 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. del Sannio | ||
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Ferroelectric-Gate Field Effect Transistor Memories [[electronic resource] ] : Device Physics and Applications / / edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon
| Ferroelectric-Gate Field Effect Transistor Memories [[electronic resource] ] : Device Physics and Applications / / edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon |
| Edizione | [2nd ed. 2020.] |
| Pubbl/distr/stampa | Singapore : , : Springer Singapore : , : Imprint : Springer, , 2020 |
| Descrizione fisica | 1 online resource (XIV, 425 p. 313 illus., 183 illus. in color.) |
| Disciplina | 621.3815284 |
| Collana | Topics in Applied Physics |
| Soggetto topico |
Electronic circuits
Electronics Microelectronics Materials—Surfaces Thin films Surfaces (Physics) Interfaces (Physical sciences) Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films |
| ISBN | 981-15-1212-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | I. Introduction -- II. Practical Characteristics of Inorganic Ferroelectric-gate FETs: Si-Based Ferroelectric-gate Field Effect Transistors -- III. Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- Ⅳ Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors -- V Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- VI Practical Characteristics of Organic Ferroelectric-Gate FETs : Ferroelectric-Gate Field Effect Transistors with Flexible Substrates -- Ⅶ Applications and Future Prospects. |
| Record Nr. | UNISA-996418178403316 |
| Singapore : , : Springer Singapore : , : Imprint : Springer, , 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications / / edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon
| Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications / / edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon |
| Edizione | [2nd ed. 2020.] |
| Pubbl/distr/stampa | Singapore : , : Springer Singapore : , : Imprint : Springer, , 2020 |
| Descrizione fisica | 1 online resource (XIV, 425 p. 313 illus., 183 illus. in color.) |
| Disciplina | 621.3815284 |
| Collana | Topics in Applied Physics |
| Soggetto topico |
Electronic circuits
Electronics Microelectronics Materials—Surfaces Thin films Surfaces (Physics) Interfaces (Physical sciences) Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films |
| ISBN | 981-15-1212-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | I. Introduction -- II. Practical Characteristics of Inorganic Ferroelectric-gate FETs: Si-Based Ferroelectric-gate Field Effect Transistors -- III. Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- Ⅳ Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors -- V Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- VI Practical Characteristics of Organic Ferroelectric-Gate FETs : Ferroelectric-Gate Field Effect Transistors with Flexible Substrates -- Ⅶ Applications and Future Prospects. |
| Record Nr. | UNINA-9910410005303321 |
| Singapore : , : Springer Singapore : , : Imprint : Springer, , 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Field effect transistors : a comprehensive overview : from basic concepts to novel technologies / / Pouya Valizadeh
| Field effect transistors : a comprehensive overview : from basic concepts to novel technologies / / Pouya Valizadeh |
| Autore | Valizadeh Pouya |
| Pubbl/distr/stampa | Hoboken, New Jersey : , : Wiley, , 2016 |
| Descrizione fisica | 1 online resource (571 pages) : illustrations |
| Disciplina | 621.3815284 |
| Soggetto topico | Field-effect transistors |
| ISBN |
9781119155782
1119155789 9781119155850 |
| Classificazione |
549.6
621.3815/284 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910795978203321 |
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Valizadeh Pouya
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| Hoboken, New Jersey : , : Wiley, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Field effect transistors : a comprehensive overview : from basic concepts to novel technologies / / Pouya Valizadeh
| Field effect transistors : a comprehensive overview : from basic concepts to novel technologies / / Pouya Valizadeh |
| Autore | Valizadeh Pouya |
| Pubbl/distr/stampa | Hoboken, New Jersey : , : Wiley, , 2016 |
| Descrizione fisica | 1 online resource (571 pages) : illustrations |
| Disciplina | 621.3815284 |
| Soggetto topico | Field-effect transistors |
| ISBN |
1-119-15580-0
1-119-15578-9 |
| Classificazione |
549.6
621.3815/284 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910821172403321 |
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Valizadeh Pouya
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| Hoboken, New Jersey : , : Wiley, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Fundamentals of tunnel field-effect transistors / / Sneh Saurabh, Indraprastha Institute of Information Technology, Delhi, India, Mamidala Jagadesh Kumar, Indian Institute of Technology, Delhi, India
| Fundamentals of tunnel field-effect transistors / / Sneh Saurabh, Indraprastha Institute of Information Technology, Delhi, India, Mamidala Jagadesh Kumar, Indian Institute of Technology, Delhi, India |
| Autore | Saurabh Sneh |
| Pubbl/distr/stampa | Boca Raton, Fla. : , : CRC Press, Taylor & Francis Group, , [2017] |
| Descrizione fisica | 1 online resource (306 pages) : illustrations |
| Disciplina | 621.3815284 |
| Soggetto topico |
Tunnel field-effect transistors
Integrated circuits - Design and construction Nanostructured materials Low voltage integrated circuits |
| ISBN |
1-315-36735-1
1-315-35026-2 1-4987-6716-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | 1. CMOS scaling -- 2. Quantum tunneling -- 3. Basics of tunnel field-effect transistor -- 4. Boosting ON-current in tunnel field-effect transistor -- 5. III-V tunnel field effect transistor -- 6. Carbon-based tunnel field-effect transistor -- 7. Nanowire tunnel field-effect transistor -- 8. Models for tunnel field-effect transistor -- 9. Applications of tunnel field-effect transistor -- 10. Future perspective. |
| Record Nr. | UNINA-9910148742103321 |
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Saurabh Sneh
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| Boca Raton, Fla. : , : CRC Press, Taylor & Francis Group, , [2017] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Gallium arsenide digital circuits / by Omar Wing
| Gallium arsenide digital circuits / by Omar Wing |
| Autore | Wing, Omar |
| Pubbl/distr/stampa | Boston [etc.], : Kluwer, c1990 |
| Descrizione fisica | XII, 188 p. ; 25 cm. |
| Disciplina |
621.3815
621.3815284 |
| Collana | The Kluwer international series in engineering and computer science, . VLSI, computer architecture and digital signal processing |
| Soggetto topico | Transistori a effetto di campo |
| ISBN | 0792390814 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISANNIO-PUV0092760 |
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Wing, Omar
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| Boston [etc.], : Kluwer, c1990 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. del Sannio | ||
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