Physics of Quantum Electron Devices [[electronic resource] /] / edited by Federico Capasso |
Edizione | [1st ed. 1990.] |
Pubbl/distr/stampa | Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 1990 |
Descrizione fisica | 1 online resource (XVI, 403 p.) |
Disciplina |
620.11295
620.11297 |
Collana | Springer Series in Electronics and Photonics |
Soggetto topico |
Optical materials
Electronic materials Electronics Microelectronics Optical and Electronic Materials Electronics and Microelectronics, Instrumentation |
ISBN | 3-642-74751-5 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | 1. Introduction -- 1.1 A Perspective on the Evolution of Quantum Semiconductor Devices -- 1.2 Outline of the Book -- References -- 2. The Nature of Molecular Beam Epitaxy and Consequences for Quantum Microstructures -- 2.1 Dimensional Confinement and Device Concepts -- 2.2 Molecular Beam Epitaxy -- 2.3 The Surface Kinetic Processes and Computer Simulations of Growth -- 2.4 Quantum Wells: Growth and Photoluminescence -- 2.5 Concluding Remarks -- 2.6 Recent Advances -- References -- 3. Nanolithography for Ultra-Small Structure Fabrication -- 3.1 Overview -- 3.2 Resolution Limits of Lithographic Processes -- 3.3 Pattern Transfer -- References -- 4. Theory of Resonant Tunnelling and Surface Superlattices -- 4.1 Tunnelling Probabilities -- 4.2 Tunnelling Time -- 4.3 Pseudo-Device Calculations -- 4.4 Lateral Superlattices -- References -- 5. The Investigation of Single and Double Barrier (Resonant Tunnelling) Heterostructures Using High Magnetic Fields -- 5.1 Background -- 5.2 LO Phonon Structure in the I(V) and C(V) Curves of Reverse-Biased Heterostructures -- 5.3 Magnetotunnelling from the 2D Electron Gas in Accumulated (InGa)As/InP Structures Grown by MBE and MOCVD -- 5.4 Observation of Magnetoquantized Interface States by Electron Tunnelling in Single-Barrier n? (InGa)As/InP/n+ (InGa)As Heterostructures -- 5.5 Box Quantised States -- 5.6 Double Barrier Resonant Tunnelling Devices -- References -- 6. Microwave and Millimeter-Wave Resonant-Tunnelling Devices -- 6.1 Speed of Response -- 6.2 Resonant-Tunnelling Oscillators -- 6.3 Self-Oscillating Mixers -- 6.4 Resistive Multipliers -- 6.5 Variable Absolute Negative Conductance -- 6.6 Persistent Photoconductivity and a Resonant-Tunnelling Transistor -- 6.7 A Look at Resonant-Tunnelling Theory -- 6.8 Concluding Remarks -- Note Added in Proof -- List of Symbols -- References -- 7. Resonant Tunnelling and Superlattice Devices: Physics and Circuits -- 7.1 Resonant Tunnelling Through Double Barriers and Superlattices -- 7.2 Application of Resonant Tunnelling: Transistors and Circuits -- References -- 8. Resonant-Tunnelling Hot Electron Transistors (RHET) -- 8.1 RHET Operation -- 8.2 RHET Technology Using GaAs/AlGaAs Heterostructures -- 8.3 InGaAs-Based Material Evaluation -- 8.4 RHET Technology Using InGaAs-Based Materials -- 8.5 Theoretical Analyses of RHET Performance -- 8.6 Summary -- References -- 9. Ballistic Electron Transport in Hot Electron Transistors -- 9.1 Ballistic Transport -- 9.2 Hot Electron Transistors -- 9.3 Hot Electron Injectors -- 9.4 Energy Spectroscopy -- 9.5 Electron Coherent Effects in the THETA Device -- 9.6 Transfer to the L Satellite Valleys -- 9.7 The THETA as a Practical Device -- References -- 10. Quantum Interference Devices -- 10.1 Background -- 10.2 Two-Port Quantum Devices -- 10.3 Multiport Quantum Devices -- Appendix: Aharonov — Bohm Phase-shift in an Electric or Magnetic Field -- References -- Additional References -- 11. Carrier Confinement to One and Zero Degrees of Freedom -- 11.1 Experimental Methods -- 11.2 Discussion of Experimental Results -- 11.3 Conclusions -- References -- 12. Quantum Effects in Quasi-One-Dimensional MOSFETs -- 12.1 Background -- 12.2 MOSFET Length Scales -- 12.3 Special MOSFET Geometries -- 12.4 Strictly 1D Transport -- 12.5 Multichannel Transport (Particle in a Box?) -- 12.6 Averaged Quantum Diffusion -- 12.7 Mesoscopic Quantum Diffusion (Universal Conductance Fluctuations) -- 12.8 Effect of One Scatterer -- 12.9 Conclusion -- References. |
Record Nr. | UNINA-9910792491303321 |
Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 1990 | ||
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Lo trovi qui: Univ. Federico II | ||
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Physics of Quantum Electron Devices [[electronic resource] /] / edited by Federico Capasso |
Edizione | [1st ed. 1990.] |
Pubbl/distr/stampa | Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 1990 |
Descrizione fisica | 1 online resource (XVI, 403 p.) |
Disciplina |
620.11295
620.11297 |
Collana | Springer Series in Electronics and Photonics |
Soggetto topico |
Optical materials
Electronic materials Electronics Microelectronics Optical and Electronic Materials Electronics and Microelectronics, Instrumentation |
ISBN | 3-642-74751-5 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | 1. Introduction -- 1.1 A Perspective on the Evolution of Quantum Semiconductor Devices -- 1.2 Outline of the Book -- References -- 2. The Nature of Molecular Beam Epitaxy and Consequences for Quantum Microstructures -- 2.1 Dimensional Confinement and Device Concepts -- 2.2 Molecular Beam Epitaxy -- 2.3 The Surface Kinetic Processes and Computer Simulations of Growth -- 2.4 Quantum Wells: Growth and Photoluminescence -- 2.5 Concluding Remarks -- 2.6 Recent Advances -- References -- 3. Nanolithography for Ultra-Small Structure Fabrication -- 3.1 Overview -- 3.2 Resolution Limits of Lithographic Processes -- 3.3 Pattern Transfer -- References -- 4. Theory of Resonant Tunnelling and Surface Superlattices -- 4.1 Tunnelling Probabilities -- 4.2 Tunnelling Time -- 4.3 Pseudo-Device Calculations -- 4.4 Lateral Superlattices -- References -- 5. The Investigation of Single and Double Barrier (Resonant Tunnelling) Heterostructures Using High Magnetic Fields -- 5.1 Background -- 5.2 LO Phonon Structure in the I(V) and C(V) Curves of Reverse-Biased Heterostructures -- 5.3 Magnetotunnelling from the 2D Electron Gas in Accumulated (InGa)As/InP Structures Grown by MBE and MOCVD -- 5.4 Observation of Magnetoquantized Interface States by Electron Tunnelling in Single-Barrier n? (InGa)As/InP/n+ (InGa)As Heterostructures -- 5.5 Box Quantised States -- 5.6 Double Barrier Resonant Tunnelling Devices -- References -- 6. Microwave and Millimeter-Wave Resonant-Tunnelling Devices -- 6.1 Speed of Response -- 6.2 Resonant-Tunnelling Oscillators -- 6.3 Self-Oscillating Mixers -- 6.4 Resistive Multipliers -- 6.5 Variable Absolute Negative Conductance -- 6.6 Persistent Photoconductivity and a Resonant-Tunnelling Transistor -- 6.7 A Look at Resonant-Tunnelling Theory -- 6.8 Concluding Remarks -- Note Added in Proof -- List of Symbols -- References -- 7. Resonant Tunnelling and Superlattice Devices: Physics and Circuits -- 7.1 Resonant Tunnelling Through Double Barriers and Superlattices -- 7.2 Application of Resonant Tunnelling: Transistors and Circuits -- References -- 8. Resonant-Tunnelling Hot Electron Transistors (RHET) -- 8.1 RHET Operation -- 8.2 RHET Technology Using GaAs/AlGaAs Heterostructures -- 8.3 InGaAs-Based Material Evaluation -- 8.4 RHET Technology Using InGaAs-Based Materials -- 8.5 Theoretical Analyses of RHET Performance -- 8.6 Summary -- References -- 9. Ballistic Electron Transport in Hot Electron Transistors -- 9.1 Ballistic Transport -- 9.2 Hot Electron Transistors -- 9.3 Hot Electron Injectors -- 9.4 Energy Spectroscopy -- 9.5 Electron Coherent Effects in the THETA Device -- 9.6 Transfer to the L Satellite Valleys -- 9.7 The THETA as a Practical Device -- References -- 10. Quantum Interference Devices -- 10.1 Background -- 10.2 Two-Port Quantum Devices -- 10.3 Multiport Quantum Devices -- Appendix: Aharonov — Bohm Phase-shift in an Electric or Magnetic Field -- References -- Additional References -- 11. Carrier Confinement to One and Zero Degrees of Freedom -- 11.1 Experimental Methods -- 11.2 Discussion of Experimental Results -- 11.3 Conclusions -- References -- 12. Quantum Effects in Quasi-One-Dimensional MOSFETs -- 12.1 Background -- 12.2 MOSFET Length Scales -- 12.3 Special MOSFET Geometries -- 12.4 Strictly 1D Transport -- 12.5 Multichannel Transport (Particle in a Box?) -- 12.6 Averaged Quantum Diffusion -- 12.7 Mesoscopic Quantum Diffusion (Universal Conductance Fluctuations) -- 12.8 Effect of One Scatterer -- 12.9 Conclusion -- References. |
Record Nr. | UNINA-9910826209403321 |
Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 1990 | ||
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Lo trovi qui: Univ. Federico II | ||
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Piezoelectric Sensors and Actuators [[electronic resource] ] : Fundamentals and Applications / / by Stefan Johann Rupitsch |
Autore | Rupitsch Stefan Johann |
Edizione | [1st ed. 2019.] |
Pubbl/distr/stampa | Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2019 |
Descrizione fisica | 1 online resource (XIV, 559 p. 302 illus., 139 illus. in color.) |
Disciplina |
620.11295
620.11297 |
Collana | Topics in Mining, Metallurgy and Materials Engineering |
Soggetto topico |
Optical materials
Electronic materials Nanotechnology Control engineering Optical and Electronic Materials Nanotechnology and Microengineering Control and Systems Theory |
ISBN | 3-662-57534-5 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | Part I Fundamentals -- Physics -- Materials Showing Piezoelectricity -- Modeling of Piezoelectric Materials -- Numerical Simulation of Piezoelectric Sensors and Actuators -- Phenomenological Modeling Approaches for the Large-Signal Behavior of Piezoceramics -- Simulation-based Characterization of Materials -- Part II Applications -- Piezoelectric Transducers -- Process Measurement Technology -- Nondestructive Material Testing -- Medicine -- Smart Structures -- Piezoelectric Positioning Elements and Transformers -- Energy Harvesting. |
Record Nr. | UNINA-9910337622003321 |
Rupitsch Stefan Johann
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Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2019 | ||
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Lo trovi qui: Univ. Federico II | ||
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Power Electronics [[electronic resource] ] : Converters and Regulators / / by Branko L. Dokić, Branko Blanuša |
Autore | Dokić Branko L |
Edizione | [3rd ed. 2015.] |
Pubbl/distr/stampa | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2015 |
Descrizione fisica | 1 online resource (608 p.) |
Disciplina |
620
620.11295 620.11297 621.042 621.317 |
Soggetto topico |
Power electronics
Optical materials Electronic materials Energy systems Power Electronics, Electrical Machines and Networks Optical and Electronic Materials Energy Systems |
ISBN | 3-319-09402-5 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | Chapter 1 Introduction -- Chapter 2 Diodes and Transistors -- Chapter 3 Regenerative Switches -- Chapter 4 PWM DC/DC Converters -- Chapter 5 Control Modules -- Chapter 6 DC/AC Converters – Inverters -- Chapter 7 AC/DC Converters - Rectifiers -- Chapter 8 AC/AC Converters -- Chapter 9 Resonant Converters -- Chapter 10 Introduction to Multilevel Converters. |
Record Nr. | UNINA-9910299669103321 |
Dokić Branko L
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Cham : , : Springer International Publishing : , : Imprint : Springer, , 2015 | ||
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Lo trovi qui: Univ. Federico II | ||
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Proceedings of the TMS Middle East - Mediterranean Materials Congress on Energy and Infrastructure Systems (MEMA 2015) [[electronic resource] /] / edited by Ibrahim Karaman, Raymundo Arróyave, Eyad Masad |
Edizione | [1st ed. 2016.] |
Pubbl/distr/stampa | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2016 |
Descrizione fisica | 1 online resource (532 pages) : illustrations, tables |
Disciplina |
620.11295
620.11297 |
Collana | The Minerals, Metals & Materials Series |
Soggetto topico |
Optical materials
Electronic materials Engineering—Materials Ceramics Glass Composites (Materials) Composite materials Optical and Electronic Materials Materials Engineering Ceramics, Glass, Composites, Natural Materials |
ISBN | 3-319-48766-3 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910254036103321 |
Cham : , : Springer International Publishing : , : Imprint : Springer, , 2016 | ||
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Lo trovi qui: Univ. Federico II | ||
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Progress in High-Efficient Solution Process Organic Photovoltaic Devices [[electronic resource] ] : Fundamentals, Materials, Devices and Fabrication / / edited by Yang Yang, Gang Li |
Edizione | [1st ed. 2015.] |
Pubbl/distr/stampa | Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2015 |
Descrizione fisica | 1 online resource (421 p.) |
Disciplina |
620.11295
620.11297 |
Collana | Topics in Applied Physics |
Soggetto topico |
Optical materials
Electronic materials Renewable energy resources Physical chemistry Microwaves Optical engineering Semiconductors Optical and Electronic Materials Renewable and Green Energy Physical Chemistry Microwaves, RF and Optical Engineering |
ISBN | 3-662-45509-9 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | Introduction of Organic Photovoltaic Devices -- Fundamentals -- Materials -- Device and Manufacturing Technology. |
Record Nr. | UNINA-9910300419403321 |
Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2015 | ||
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Lo trovi qui: Univ. Federico II | ||
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Second-Order Photogalvanic Photocurrents in 2D Materials [[electronic resource] /] / by Mustafa Eginligil, Ting Yu |
Autore | Eginligil Mustafa |
Edizione | [1st ed. 2024.] |
Pubbl/distr/stampa | Singapore : , : Springer Nature Singapore : , : Imprint : Springer, , 2024 |
Descrizione fisica | 1 online resource (129 pages) |
Disciplina | 620.11295 |
Altri autori (Persone) | YuTing |
Collana | Nanoscience and Nanotechnology |
Soggetto topico |
Optical materials
Telecommunication Lasers Nanochemistry Solid state physics Nanotechnology Optical Materials Microwaves, RF Engineering and Optical Communications Laser Electronic Devices |
ISBN | 981-9706-18-1 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | 1. Introduction to light polarization-dependent photocurrent – phenomenology -- 2. Graphene as the model low-dimensional photogalvanic material -- 3. Light helicity dependent photocurrent in graphene planes -- 4. Influence of spin-valley coupling on photogalvanic photocurrents in layered transition metal dichalcogenides -- 5. Light helicity dependent photocurrent in layered transition metal dichalcogenides. |
Record Nr. | UNINA-9910845083303321 |
Eginligil Mustafa
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Singapore : , : Springer Nature Singapore : , : Imprint : Springer, , 2024 | ||
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Lo trovi qui: Univ. Federico II | ||
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Semiconducting Metal Oxides for Gas Sensing [[electronic resource] /] / by Yonghui Deng |
Autore | Deng Yonghui |
Edizione | [1st ed. 2019.] |
Pubbl/distr/stampa | Singapore : , : Springer Singapore : , : Imprint : Springer, , 2019 |
Descrizione fisica | 1 online resource (XVI, 246 p. 107 illus., 76 illus. in color.) |
Disciplina |
620.11295
620.11297 |
Soggetto topico |
Optical materials
Electronic materials Semiconductors Engineering—Materials Materials science Materials—Surfaces Thin films Nanotechnology Optical and Electronic Materials Materials Engineering Characterization and Evaluation of Materials Surfaces and Interfaces, Thin Films Nanotechnology and Microengineering |
ISBN | 981-13-5853-2 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | Preface -- Understanding of semiconducting metal oxides gas sensors -- Semiconducting metal oxides: morphology and sensing performance -- Semiconducting metal oxides: composition and sensing performance -- Semiconducting metal oxides: microstructure and sensing performance -- Gas sensing performance and evaluation criteria -- New approach to better performance -- Sensing mechanism of semiconducting metal oxides gas sensors -- Sensing devices of semiconducting metal oxides -- Concerns in practical gas sensor fabrications -- Applications of semiconducting metal oxides gas sensors -- Summary and outlook. |
Record Nr. | UNINA-9910350338903321 |
Deng Yonghui
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Singapore : , : Springer Singapore : , : Imprint : Springer, , 2019 | ||
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Lo trovi qui: Univ. Federico II | ||
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Sensor systems for environmental monitoring / edited by M. Campbell |
Autore | Campbell, Michael |
Pubbl/distr/stampa | London : Blackie Academic & Professional, [1997] |
Descrizione fisica | 2 v. : ill. ; 24 cm. |
Disciplina | 620.11295 |
Soggetto topico |
Fibre ottiche
Materiali - Proprietà ottiche |
ISBN |
0751404187
0751404195 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNISALENTO-991003915079707536 |
Campbell, Michael
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London : Blackie Academic & Professional, [1997] | ||
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Lo trovi qui: Univ. del Salento | ||
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Silicon Analog Components [[electronic resource] ] : Device Design, Process Integration, Characterization, and Reliability / / by Badih El-Kareh, Lou N. Hutter |
Autore | El-Kareh Badih |
Edizione | [1st ed. 2015.] |
Pubbl/distr/stampa | New York, NY : , : Springer New York : , : Imprint : Springer, , 2015 |
Descrizione fisica | 1 online resource (634 p.) |
Disciplina |
620
620.11295 620.11297 621.3815 |
Soggetto topico |
Electronic circuits
Optical materials Electronic materials Circuits and Systems Electronic Circuits and Devices Optical and Electronic Materials |
ISBN | 1-4939-2751-5 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | The World Is Analog -- Review of Single-Crystal Silicon Properties -- PN Junctions -- Rectifying and Ohmic Contacts -- Bipolar and Junction Field-Effect Transistors -- High-Voltage and Power Transistors -- Passive Components -- Process Integration -- Mismatch and Noise -- Chip Reliability. |
Record Nr. | UNINA-9910299832603321 |
El-Kareh Badih
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New York, NY : , : Springer New York : , : Imprint : Springer, , 2015 | ||
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Lo trovi qui: Univ. Federico II | ||
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