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Power electronics semiconductor devices [[electronic resource] /] / edited by Robert Perret
| Power electronics semiconductor devices [[electronic resource] /] / edited by Robert Perret |
| Pubbl/distr/stampa | London, : ISTE |
| Descrizione fisica | 1 online resource (569 p.) |
| Disciplina |
621.381/044
621.38152 |
| Altri autori (Persone) | PerretRobert |
| Collana | ISTE |
| Soggetto topico |
Power electronics
Power semiconductors Solid state electronics |
| ISBN |
1-282-25383-2
9786613814487 0-470-61149-9 0-470-39414-5 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Power Electronics Semiconductor Devices; Table of Contents; Preface; Chapter 1. Power MOSFET Transistors; 1.1. Introduction; 1.2. Power MOSFET technologies; 1.2.1. Diffusion process; 1.2.2. Physical and structural MOS parameters; 1.2.3. Permanent sustaining current; 1.3. Mechanism of power MOSFET operation; 1.3.1. Basic principle; 1.3.2. Electron injection; 1.3.3. Static operation; 1.3.4. Dynamic operation; 1.4. Power MOSFET main characteristics; 1.5. Switching cycle with an inductive load; 1.5.1. Switch-on study; 1.5.2. Switch-off study
1.6. Characteristic variations due to MOSFET temperature changes1.7. Over-constrained operations; 1.7.1. Overvoltage on the gate; 1.7.2. Over-current; 1.7.3. Avalanche sustaining; 1.7.4. Use of the body diode; 1.7.5. Safe operating areas; 1.8. Future developments of the power MOSFET; 1.9. References; Chapter 2. Insulated Gate Bipolar Transistors; 2.1. Introduction; 2.2. IGBT technology; 2.2.1. IGBT structure; 2.2.2. Voltage and current characteristics; 2.3. Operation technique; 2.3.1. Basic principle; 2.3.2. Continuous operation; 2.3.3. Dynamic operation; 2.4. Main IGBT characteristics 2.5 One cycle of hard switching on the inductive load2.5.1. Switch-on study; 2.5.2. Switch-off study; 2.6 Soft switching study; 2.6.1. Soft switching switch-on: ZVS (Zero Voltage Switching); 2.6.2. Soft switching switch-off: ZCS (Zero Current Switching); 2.7. Temperature operation; 2.8. Over-constraint operations; 2.8.1. Overvoltage; 2.8.2. Over-current; 2.8.3. Manufacturer's specified safe operating areas; 2.9. Future of IGBT; 2.9.1. Silicon evolution; 2.9.2. Saturation voltage improvements; 2.10. IGBT and MOSFET drives and protections; 2.10.1. Gate drive design; 2.10.2. Gate drive circuits 2.10.3. MOSFET and IGBT protections2.11. References; Chapter 3. Series and Parallel Connections of MOS and IGBT; 3.1. Introduction; 3.2. Kinds of associations; 3.2.1. Increase of power; 3.2.2. Increasing performance; 3.3. The study of associations: operation and parameter influence on imbalances in series and parallel; 3.3.1. Analysis and characteristics for the study of associations; 3.3.2. Static operation; 3.3.3. Dynamic operation: commutation; 3.3.4. Transient operation; 3.3.5. Technological parameters that influence imbalances; 3.4. Solutions for design; 3.4.1. Parallel association 3.4.2. Series associations3.4.3. Matrix connection of components; 3.5. References; Chapter 4. Silicon Carbide Applications in Power Electronics; 4.1. Introduction; 4.2. Physical properties of silicon carbide; 4.2.1. Structural features; 4.2.2. Chemical, mechanical and thermal features; 4.2.3. Electronic and thermal features; 4.2.4. Other "candidates" as semiconductors of power; 4.3. State of the art technology for silicon carbide power components; 4.3.1. Substrates and thin layers of SiC; 4.3.2. Technological steps for achieving power components 4.4. Applications of silicon carbide in power electronics |
| Record Nr. | UNINA-9910829904303321 |
| London, : ISTE | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Power electronics semiconductor devices [[electronic resource] /] / edited by Robert Perret
| Power electronics semiconductor devices [[electronic resource] /] / edited by Robert Perret |
| Pubbl/distr/stampa | London, : ISTE |
| Descrizione fisica | 1 online resource (569 p.) |
| Disciplina |
621.381/044
621.38152 |
| Altri autori (Persone) | PerretRobert |
| Collana | ISTE |
| Soggetto topico |
Power electronics
Power semiconductors Solid state electronics |
| ISBN |
1-282-25383-2
9786613814487 0-470-61149-9 0-470-39414-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Power Electronics Semiconductor Devices; Table of Contents; Preface; Chapter 1. Power MOSFET Transistors; 1.1. Introduction; 1.2. Power MOSFET technologies; 1.2.1. Diffusion process; 1.2.2. Physical and structural MOS parameters; 1.2.3. Permanent sustaining current; 1.3. Mechanism of power MOSFET operation; 1.3.1. Basic principle; 1.3.2. Electron injection; 1.3.3. Static operation; 1.3.4. Dynamic operation; 1.4. Power MOSFET main characteristics; 1.5. Switching cycle with an inductive load; 1.5.1. Switch-on study; 1.5.2. Switch-off study
1.6. Characteristic variations due to MOSFET temperature changes1.7. Over-constrained operations; 1.7.1. Overvoltage on the gate; 1.7.2. Over-current; 1.7.3. Avalanche sustaining; 1.7.4. Use of the body diode; 1.7.5. Safe operating areas; 1.8. Future developments of the power MOSFET; 1.9. References; Chapter 2. Insulated Gate Bipolar Transistors; 2.1. Introduction; 2.2. IGBT technology; 2.2.1. IGBT structure; 2.2.2. Voltage and current characteristics; 2.3. Operation technique; 2.3.1. Basic principle; 2.3.2. Continuous operation; 2.3.3. Dynamic operation; 2.4. Main IGBT characteristics 2.5 One cycle of hard switching on the inductive load2.5.1. Switch-on study; 2.5.2. Switch-off study; 2.6 Soft switching study; 2.6.1. Soft switching switch-on: ZVS (Zero Voltage Switching); 2.6.2. Soft switching switch-off: ZCS (Zero Current Switching); 2.7. Temperature operation; 2.8. Over-constraint operations; 2.8.1. Overvoltage; 2.8.2. Over-current; 2.8.3. Manufacturer's specified safe operating areas; 2.9. Future of IGBT; 2.9.1. Silicon evolution; 2.9.2. Saturation voltage improvements; 2.10. IGBT and MOSFET drives and protections; 2.10.1. Gate drive design; 2.10.2. Gate drive circuits 2.10.3. MOSFET and IGBT protections2.11. References; Chapter 3. Series and Parallel Connections of MOS and IGBT; 3.1. Introduction; 3.2. Kinds of associations; 3.2.1. Increase of power; 3.2.2. Increasing performance; 3.3. The study of associations: operation and parameter influence on imbalances in series and parallel; 3.3.1. Analysis and characteristics for the study of associations; 3.3.2. Static operation; 3.3.3. Dynamic operation: commutation; 3.3.4. Transient operation; 3.3.5. Technological parameters that influence imbalances; 3.4. Solutions for design; 3.4.1. Parallel association 3.4.2. Series associations3.4.3. Matrix connection of components; 3.5. References; Chapter 4. Silicon Carbide Applications in Power Electronics; 4.1. Introduction; 4.2. Physical properties of silicon carbide; 4.2.1. Structural features; 4.2.2. Chemical, mechanical and thermal features; 4.2.3. Electronic and thermal features; 4.2.4. Other "candidates" as semiconductors of power; 4.3. State of the art technology for silicon carbide power components; 4.3.1. Substrates and thin layers of SiC; 4.3.2. Technological steps for achieving power components 4.4. Applications of silicon carbide in power electronics |
| Record Nr. | UNINA-9910841506203321 |
| London, : ISTE | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Terre-Neuve : Anthologie des voyageurs français, 1814-1914 / / Ronald Rompkey
| Terre-Neuve : Anthologie des voyageurs français, 1814-1914 / / Ronald Rompkey |
| Autore | Rompkey Ronald |
| Pubbl/distr/stampa | Rennes, : Presses universitaires de Rennes, 2017 |
| Descrizione fisica | 1 online resource (308 p.) |
| Altri autori (Persone) |
Bachelot de La PylaieAuguste-Jean-Marie
BergeronJean-Jacques CaixRobert de CarnéOlivier-Marie CarponConstant-Jean-Antoine ChaumeHenri de la ChevalierHenri-Émile Colloch de KérillisHenri-Augustin Cornette de VenancourtFrançois FormelleWilfrid de GazeauPaul GéraudGaston GobineauJoseph Arthur de HouisteGaud JoinvilleFrançois-Ferdinand-Philippe-Louis-Marie d'Orléans, ǂc prince de, ǂd 1818-1900 JouanHenri KoenigLouis LaunayLouis de La ChaumeHenri de La Roncière Le NouryLe baron Clément de LeconteFrançois LucasJean MarquerErnest-Ange MartineGeorges-Benjamin-Edouard MicheletPhilippe NeyEugène O’BrigN PerretRobert RameauEdmé ReclusElisée RevertPaul RévoilBénédict-Henry RosselFrédéric SallesAndré ThouletJulien-Olivier VanéechoutÉdouard-Polydore RompkeyRonald |
| Soggetto topico |
History
Voyages Terre-Neuve XIXe siècle récit anthologie |
| Soggetto non controllato |
récit
Terre-Neuve anthologie Voyages XIXe siècle |
| ISBN | 2-7535-6574-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | fre |
| Record Nr. | UNINA-9910252739203321 |
Rompkey Ronald
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| Rennes, : Presses universitaires de Rennes, 2017 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||