Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
Silicon technologies [[electronic resource] ] : ion implantation and thermal treatment / / edited by Annie Baudrant
| Silicon technologies [[electronic resource] ] : ion implantation and thermal treatment / / edited by Annie Baudrant |
| Edizione | [1st edition] |
| Pubbl/distr/stampa | London, : ISTE |
| Descrizione fisica | 1 online resource (357 p.) |
| Disciplina | 621.3815/2 |
| Altri autori (Persone) | BaudrantAnnie |
| Collana | ISTE |
| Soggetto topico |
Semiconductor doping
Ion implantation Semiconductors - Heat treatment |
| ISBN |
1-118-60104-1
1-118-60114-9 1-118-60111-4 1-299-18753-6 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Title Page; Copyright Page; Table of Contents; Preface; Chapter 1. Silicon and Silicon Carbide Oxidation; 1.1. Introduction; 1.2. Overview of the various oxidation techniques; 1.2.1. General information; 1.2.2. Most frequently used methods in the semiconductor industry; 1.2.3. Other methods; 1.3. Some physical properties of silica; 1.3.1. The silica structure; 1.3.2. Three useful parameters of silica; 1.3.3. Transport properties in silica; 1.4. Equations of atomic transport during oxidation; 1.4.1. Transport equations in the general case
1.5.5. Experimental results and conclusions on the transport mechanisms during the anodic oxidation of silicon1.5.6. Important experimental results from dry SiC thermal oxidation; 1.6. Transport equations in the case of thermal oxidation; 1.6.1. General information on flux and on growth kinetics; 1.6.2. Flux calculation for neutral mobile species; 1.6.3. Flux calculation for ion mobile species; 1.7. Deal and Grove theory of thermal oxidation; 1.7.1. Flux calculation; 1.7.2. Growth kinetics equations; 1.7.3. Remarks on the fluctuations of the oxidation constants kP and kL 1.7.4. Determination of the oxidation parameters from experimental results1.7.5. Confrontation of the Deal and Grove theory with experimental results; 1.7.6. Conclusions on the Deal and Grove theory; 1.8. Theory of thermal oxidation under water vapor of silicon; 1.8.1. Concentration profiles expected for H2O; 1.8.2. Concentration profiles expected for the OH groups; 1.8.3. Concentration profiles expected for H2; 1.8.4. Concentration profiles expected for H; 1.8.5. Comparison of the expected and the experimental profiles; 1.8.6. Wolters theory 1.9. Kinetics of growth in O2 for oxide films < 30 nm1.9.1. Introduction; 1.9.2. Oxidation models of thin films; 1.9.3. Case of ultra-thin films (< 5 nm); 1.9.4. On line simulator; 1.9.5. Kinetics and models of SiC oxidation; 1.10. Fluctuations of the oxidation constants under experimental conditions; 1.10.1. Role of the pressure; 1.10.2. Role of the temperature; 1.10.3. Role of the crystal direction; 1.10.4. Role of doping; 1.11. Conclusion; 1.12. Bibliography; Chapter 2. Ion Implantation; 2.1. Introduction; 2.2. Ion implanters; 2.2.1. General description; 2.2.2. Ion sources 2.2.3. Mass analysis and beam optics |
| Record Nr. | UNINA-9910138851603321 |
| London, : ISTE | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Silicon technologies [[electronic resource] ] : ion implantation and thermal treatment / / edited by Annie Baudrant
| Silicon technologies [[electronic resource] ] : ion implantation and thermal treatment / / edited by Annie Baudrant |
| Edizione | [1st edition] |
| Pubbl/distr/stampa | London, : ISTE |
| Descrizione fisica | 1 online resource (357 p.) |
| Disciplina | 621.3815/2 |
| Altri autori (Persone) | BaudrantAnnie |
| Collana | ISTE |
| Soggetto topico |
Semiconductor doping
Ion implantation Semiconductors - Heat treatment |
| ISBN |
1-118-60104-1
1-118-60114-9 1-118-60111-4 1-299-18753-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Title Page; Copyright Page; Table of Contents; Preface; Chapter 1. Silicon and Silicon Carbide Oxidation; 1.1. Introduction; 1.2. Overview of the various oxidation techniques; 1.2.1. General information; 1.2.2. Most frequently used methods in the semiconductor industry; 1.2.3. Other methods; 1.3. Some physical properties of silica; 1.3.1. The silica structure; 1.3.2. Three useful parameters of silica; 1.3.3. Transport properties in silica; 1.4. Equations of atomic transport during oxidation; 1.4.1. Transport equations in the general case
1.5.5. Experimental results and conclusions on the transport mechanisms during the anodic oxidation of silicon1.5.6. Important experimental results from dry SiC thermal oxidation; 1.6. Transport equations in the case of thermal oxidation; 1.6.1. General information on flux and on growth kinetics; 1.6.2. Flux calculation for neutral mobile species; 1.6.3. Flux calculation for ion mobile species; 1.7. Deal and Grove theory of thermal oxidation; 1.7.1. Flux calculation; 1.7.2. Growth kinetics equations; 1.7.3. Remarks on the fluctuations of the oxidation constants kP and kL 1.7.4. Determination of the oxidation parameters from experimental results1.7.5. Confrontation of the Deal and Grove theory with experimental results; 1.7.6. Conclusions on the Deal and Grove theory; 1.8. Theory of thermal oxidation under water vapor of silicon; 1.8.1. Concentration profiles expected for H2O; 1.8.2. Concentration profiles expected for the OH groups; 1.8.3. Concentration profiles expected for H2; 1.8.4. Concentration profiles expected for H; 1.8.5. Comparison of the expected and the experimental profiles; 1.8.6. Wolters theory 1.9. Kinetics of growth in O2 for oxide films < 30 nm1.9.1. Introduction; 1.9.2. Oxidation models of thin films; 1.9.3. Case of ultra-thin films (< 5 nm); 1.9.4. On line simulator; 1.9.5. Kinetics and models of SiC oxidation; 1.10. Fluctuations of the oxidation constants under experimental conditions; 1.10.1. Role of the pressure; 1.10.2. Role of the temperature; 1.10.3. Role of the crystal direction; 1.10.4. Role of doping; 1.11. Conclusion; 1.12. Bibliography; Chapter 2. Ion Implantation; 2.1. Introduction; 2.2. Ion implanters; 2.2.1. General description; 2.2.2. Ion sources 2.2.3. Mass analysis and beam optics |
| Record Nr. | UNINA-9910815238903321 |
| London, : ISTE | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||