The chemistry of metal CVD / / edited by Toivo T. Kodas and Mark J. Hampden-Smith

• Pubblicazione: Weinheim, [Germany] : , : VCH, , 1994; ©1994
• Descrizione fisica: 1 online resource (566 p.)
• Disciplina: 546.3; 621.3815
• Soggetto topico: Electronic circuit design; Chemical vapor deposition; Metallic films
• Persona (resp. second.): KodasToivo T.; Hampden-SmithMark J.
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references at the end of each chapters and index.
• Nota di contenuto: The Chemistry of Metal CVD; Contents; List of Contributors; Chemical Abbreviations; General Abbreviations; 1 Introduction; 1.1 Introduction; 1.2 Current Interconnect Schemes in Silicon Devices; 1.2.1 Metal-Silicon Contacts; 1.2.2 Diffusion Barrier Layers; 1.2.2.1 Sacrificial Diffusion Barriers; 1.2.2.2 Stuffed Diffusion Barriers; 1.2.2.3 Passive Diffusion Barriers; 1.2.2.4 Amorphous Diffusion Barriers; 1.2.3 Contact Layers; 1.2.3.1 Platinum Silicide (PtSi); 1.2.3.2 Titanium Silicide (TiSi2); 1.2.3.3 Cobalt Silicide (CoSi2); 1.2.3.4 Other Near Noble Silicides (Nisi, PdzSi, MoSi2) ; 1.2.4 Primary Interconnection1.2.4.1 Aluminum Metallization; 1.2.4.2 Tungsten Metallization; 1.2.4.3 Copper Metallization; 1.2.4.4 Gold Metallization; 1.3 Metallization Requirements for the Year 2001 in Silicon-Based Technologies; 1.3.1 Trends in Device and Process Architecture; 1.3.2 CVD of Titanium; 1.3.3 CVD of Metal Silicides; 1.3.4 CVD of Metal Nitrides; 1.3.5 CVD of Copper and Barrier Layers; 1.3.6 Other Metallizations; 1.4 Metal Deposition Techniques; 1.4.1 Physical Vapor Deposition by Evaporation; 1.4.2 Physical Vapor Deposition by Sputtering ; 1.4.2.1 Conventional Sputter Deposition Techniques1.4.2.2 Magnetron-Based Sputter Deposition; 1.4.3 Chemical Vapor Deposition; 1.5 Manufacturing Issues in CVD Processes; 1.6 Summary and Conclusions; Acknowledgments; References; 2 Chemical Vapor Deposition of Aluminum; 2.1 Applications of Aluminum Films; 2.1.1 Microelectronics; 2.1.2 Metallized Polymers; 2.1.2.1 Gas Diffusion Barriers; 2.1.2.2 Optical Properties; 2.1.3 Adhesion; 2.2 Comparison Between Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD) of Aluminum; 2.3 Understanding the CVD Process; 2.3.1 Surface Diffusion ; 2.3.2 Transport Phenomena2.3.3 Gas-Phase Reactions; 2.3.4 Surface Reactivity; 2.3.5 Nucleation; 2.3.6 Summary of Aluminum Precursors; 2.4 CVD Using Triisobutylaluminum; 2.4.1 Early Developments; 2.4.2 Optimization of Aluminum CVD; 2.4.2.1 Morphology of Aluminum Deposits; 2.4.2.2 Alloys with Cu and Si; 2.4.2.3 Nucleation Promoters; 2.4.2.4 Aluminum Epitaxy on Si; 2.4.3 Surface Decomposition Mechanism of TIBA; 2.4.4 Patterning of Aluminum Films; 2.5 Deposition of Aluminum from Trimethylaluminum; 2.5.1 Thermal Activation of TMA; 2.5.2 Plasma-Assisted Aluminum Deposition Using TMA ; 2.5.3 Laser-Assisted Aluminum Deposition from TMA2.6 Deposition of Aluminum Films from Alane Precursors; 2.6.1 Surface Reaction Mechanism of TMAA; 2.6.2 Deposition in Cold-Wall Reactors Using TMAA; 2.6.3 Deposition in Hot-Wall Reactors Using TMAA; 2.6.4 Aluminum Deposition from TEAA; 2.6.5 Aluminum Deposition from DMEAA; 2.6.6 Selectivity of Deposition Using Alane Precursors; 2.6.7 Aluminum Deposition Using Aluminaborane Precursors; 2.6.8 Gas-Phase Aluminum Particle Formation From Amine Alanes; 2.7 Alternative Aluminum Alkyl Sources; 2.7.1 Triethylaluminum; 2.7.2 Dimethylaluminum Hydride ; 2.7.3 Diethylaluminum Chloride
• Sommario/riassunto: High purity, thin metal coatings have a variety of important commercial applications, for example, in the microelectronics industry, as catalysts, as protective and decorative coatings as well as in gas-diffusion barriers. This book offers detailed, up- to-date coverage of the chemistry behind the vapor deposition of different metals from organometallic precursors. In nine chapters, the CVD of metals including aluminum, tungsten, gold, silver, platinum, palladium, nickel, as well as copper from copper(I) and copper(II) compounds is covered. The synthesis and properties of the precursors, the g
• Titolo autorizzato: The chemistry of metal CVD
• ISBN: 1-281-84291-5; 9786611842918; 3-527-61585-7; 3-527-61584-9
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 996199395603316
• Lo trovi qui: Univ. di Salerno