Power electronics semiconductor devices [[electronic resource] /] / edited by Robert Perret

• Pubblicazione: London, : ISTE; Hoboken, NJ, : Wiley, 2009
• Descrizione fisica: 1 online resource (569 p.)
• Disciplina: 621.381/044; 621.38152
• Soggetto topico: Power electronics; Power semiconductors; Solid state electronics
• Altri autori: PerretRobert
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Power Electronics Semiconductor Devices; Table of Contents; Preface; Chapter 1. Power MOSFET Transistors; 1.1. Introduction; 1.2. Power MOSFET technologies; 1.2.1. Diffusion process; 1.2.2. Physical and structural MOS parameters; 1.2.3. Permanent sustaining current; 1.3. Mechanism of power MOSFET operation; 1.3.1. Basic principle; 1.3.2. Electron injection; 1.3.3. Static operation; 1.3.4. Dynamic operation; 1.4. Power MOSFET main characteristics; 1.5. Switching cycle with an inductive load; 1.5.1. Switch-on study; 1.5.2. Switch-off study ; 1.6. Characteristic variations due to MOSFET temperature changes1.7. Over-constrained operations; 1.7.1. Overvoltage on the gate; 1.7.2. Over-current; 1.7.3. Avalanche sustaining; 1.7.4. Use of the body diode; 1.7.5. Safe operating areas; 1.8. Future developments of the power MOSFET; 1.9. References; Chapter 2. Insulated Gate Bipolar Transistors; 2.1. Introduction; 2.2. IGBT technology; 2.2.1. IGBT structure; 2.2.2. Voltage and current characteristics; 2.3. Operation technique; 2.3.1. Basic principle; 2.3.2. Continuous operation; 2.3.3. Dynamic operation; 2.4. Main IGBT characteristics ; 2.5 One cycle of hard switching on the inductive load2.5.1. Switch-on study; 2.5.2. Switch-off study; 2.6 Soft switching study; 2.6.1. Soft switching switch-on: ZVS (Zero Voltage Switching); 2.6.2. Soft switching switch-off: ZCS (Zero Current Switching); 2.7. Temperature operation; 2.8. Over-constraint operations; 2.8.1. Overvoltage; 2.8.2. Over-current; 2.8.3. Manufacturer's specified safe operating areas; 2.9. Future of IGBT; 2.9.1. Silicon evolution; 2.9.2. Saturation voltage improvements; 2.10. IGBT and MOSFET drives and protections; 2.10.1. Gate drive design; 2.10.2. Gate drive circuits ; 2.10.3. MOSFET and IGBT protections2.11. References; Chapter 3. Series and Parallel Connections of MOS and IGBT; 3.1. Introduction; 3.2. Kinds of associations; 3.2.1. Increase of power; 3.2.2. Increasing performance; 3.3. The study of associations: operation and parameter influence on imbalances in series and parallel; 3.3.1. Analysis and characteristics for the study of associations; 3.3.2. Static operation; 3.3.3. Dynamic operation: commutation; 3.3.4. Transient operation; 3.3.5. Technological parameters that influence imbalances; 3.4. Solutions for design; 3.4.1. Parallel association ; 3.4.2. Series associations3.4.3. Matrix connection of components; 3.5. References; Chapter 4. Silicon Carbide Applications in Power Electronics; 4.1. Introduction; 4.2. Physical properties of silicon carbide; 4.2.1. Structural features; 4.2.2. Chemical, mechanical and thermal features; 4.2.3. Electronic and thermal features; 4.2.4. Other "candidates" as semiconductors of power; 4.3. State of the art technology for silicon carbide power components; 4.3.1. Substrates and thin layers of SiC; 4.3.2. Technological steps for achieving power components ; 4.4. Applications of silicon carbide in power electronics
• Sommario/riassunto: This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise
• Titolo autorizzato: Power electronics semiconductor devices
• ISBN: 1-282-25383-2; 9786613814487; 0-470-61149-9; 0-470-39414-5
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910829904303321
• Lo trovi qui: Univ. Federico II
• Serie: ISTE