GaN-based materials and devices : growth, fabrication, characterization and performance / / editors, M.S. Shur, R.F. Davis
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| Titolo: |
GaN-based materials and devices : growth, fabrication, characterization and performance / / editors, M.S. Shur, R.F. Davis
|
| Pubblicazione: | Singapore ; ; River Edge, N.J., : World Scientific, c2004 |
| Edizione: | 33th ed. |
| Descrizione fisica: | 1 online resource (295 p.) |
| Disciplina: | 537.6223 |
| 621.38152 | |
| Soggetto topico: | Gallium nitride |
| Semiconductors | |
| Altri autori: |
ShurMichael
DavisRobert F <1942-> (Robert Foster)
|
| Note generali: | Description based upon print version of record. |
| Nota di bibliografia: | Includes bibliographical references. |
| Nota di contenuto: | Preface; CONTENTS; Materials Properties of Nitrides. Summary; Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy; Strain of GaN Layers Grown Using 6H-SiC(0001) Substrates with Different Buffer Layers; Growth of Thick GaN Films and Seeds for Bulk Crystal Growth; Cracking of GaN Films; Direct Bonding of GaN and SiC; A Novel Technique for Electronic Device Fabrication; Electronic Properties of GaN (0001) - Dielectronic Interfaces; Transport and Noise Properties; Quasi-Ballistic and Overshoot Transport in Group III-Nitrides; High Field Transport in AIN |
| Generation-Recombination Noise in GaN-Based DevicesInsulated Gate III-N Heterostructure Field-Effect Transistors; High Voltage AIGaN/GaN Heterojunction Transistors; Etched Aperture GaN CAVET Through Photoelectrochemical Wet Etching; n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor: The First Transistor Formed Via Wafer Fusion | |
| Sommario/riassunto: | The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising. |
| Titolo autorizzato: | GaN-based materials and devices |
| ISBN: | 1-281-34762-0 |
| 9786611347628 | |
| 981-256-236-2 | |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910814534303321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |
Serie:
Selected topics in electronics and systems ; ; v. 33.