Intrinsic DX centers in ternary chalcopyrite semiconductors [[electronic resource] ] : "why metastable intrinsic defects cause open-circuit-voltage limitation and how they can be avoided" / / Stephan Lany and Alex Zunger
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| Autore: |
Lany Stephan
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| Titolo: |
Intrinsic DX centers in ternary chalcopyrite semiconductors [[electronic resource] ] : "why metastable intrinsic defects cause open-circuit-voltage limitation and how they can be avoided" / / Stephan Lany and Alex Zunger
|
| Pubblicazione: | [Golden, Colo.] : , : National Renewable Energy Laboratory, , [2008?] |
| Descrizione fisica: | 13 unnumbered pages : digital, PDF file |
| Soggetto topico: | Chalcopyrite |
| Semiconductors | |
| Altri autori: |
ZungerAlex
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| Note generali: | Title from title screen (viewed on Mar. 25, 2009). |
| "Presented at the 33rd IEEE Photovoltaic Specialist Conference held May 11-16, 2008 in San Diego, California." | |
| Nota di bibliografia: | Includes bibliographical references. |
| Altri titoli varianti: | Intrinsic DX centers in ternary chalcopyrite semiconductors |
| Titolo autorizzato: | Intrinsic DX centers in ternary chalcopyrite semiconductors |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910697880903321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |