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Compact hierarchial bipolar transistor modeling with HICUM [[electronic resource] /] / Michael Schröter, Anjan Chakravorty



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Autore: Schröter Michael Visualizza persona
Titolo: Compact hierarchial bipolar transistor modeling with HICUM [[electronic resource] /] / Michael Schröter, Anjan Chakravorty Visualizza cluster
Pubblicazione: Hackensack, N.J., : World Scientific, 2010
Descrizione fisica: 1 online resource (740 p.)
Disciplina: 621.381528
Soggetto topico: Bipolar transistors
Soggetto genere / forma: Electronic books.
Altri autori: ChakravortyAnjan  
Note generali: Description based upon print version of record.
Nota di bibliografia: Includes bibliographical references and index.
Nota di contenuto: Foreword; Biographies; Preface; Table of Contents; List of Often Used Acronyms and Symbols; Chapter 1 Introduction; Chapter 2 Device Modeling Overview; Chapter 3 Theory of Homojunction Bipolar Transistors; Chapter 4 Advanced Theory; Chapter 5 Geometry (Layout) Scaling; Chapter 6 Temperature Effects; Chapter 7 Compact Noise Modeling; Chapter 8 HICUM Level2; Chapter 9 Parameter Determination for HICUM/L2; Chapter 10 Model Hierarchy; Chapter 11 Application Examples; Chapter 12 Future Trends; Index
Sommario/riassunto: ""Compact Hierarchical Bipolar Transistor Modeling with HICUM"" will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. This book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into
Titolo autorizzato: Compact hierarchial bipolar transistor modeling with HICUM  Visualizza cluster
ISBN: 1-283-14370-4
9786613143709
981-4273-22-8
Formato: Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione: Inglese
Record Nr.: 9910461618103321
Lo trovi qui: Univ. Federico II
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Serie: International series on advances in solid state electronics and technology.