Toward Quantum FinFET / / edited by Weihua Han, Zhiming M. Wang

• Pubblicazione: Cham : , : Springer International Publishing : , : Imprint : Springer, , 2013
• Edizione: 1st ed. 2013.
• Descrizione fisica: 1 online resource (369 p.)
• Disciplina: 537.622
• Soggetto topico: Nanoscale science; Nanoscience; Nanostructures; Nanotechnology; Optical materials; Electronic materials; Semiconductors; Nanoscale Science and Technology; Nanotechnology and Microengineering; Optical and Electronic Materials
• Persona (resp. second.): HanWeihua; WangZhiming M
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: ""Preface""; ""Contents""; ""Contributors""; ""Chapter 1: Simulation of Quantum Ballistic Transport in FinFETs""; ""1.1 Introduction""; ""1.2 Quantum Effects in FinFETs""; ""1.2.1 Quantum Confinement""; ""1.2.2 Quantum-Mechanical Tunneling""; ""1.2.3 Ballistic Transport and Quantum Interference""; ""1.3 Self-Consistent Field Method""; ""1.4 The NEGF in Real-Space Representation""; ""1.5 Computationally Efficient Methods in the Real Space""; ""1.5.1 The Recursive GreenÂ?s Function Algorithm""; ""1.5.2 The Contact Block Reduction Method""; ""1.5.3 The Gauss Elimination Method"" ; ""1.5.4 Computational Efficiency Comparison""""1.6 The NEGF in Mode-Space Representation""; ""1.6.1 Coupled Mode-Space Approach""; ""1.6.2 Partial-Coupled Mode-Space Approach""; ""1.6.3 Validation of the PCMS Approach""; ""1.7 Conclusion""; ""References""; ""Chapter 2: Model for Quantum Confinement in Nanowires and the Application of This Model to the Study of Carrier Mobility in Na...""; ""2.1 Introduction""; ""2.2 Surface Energy""; ""2.3 Thermodynamic Imbalance""; ""2.4 Nanowire Surface Disorder""; ""2.5 Quantum Confinement""; ""2.6 Energy Band Gap as Function of Nanowire Diameter"" ; ""2.7 Formula for Amorphicity""""2.8 Models for Carrier Scattering""; ""2.9 Calculated Carrier Mobility""; ""2.10 Conclusions""; ""References""; ""Chapter 3: Understanding the FinFET Mobility by Systematic Experiments""; ""3.1 Introduction""; ""3.2 Impact of Surface Orientation""; ""3.3 Impact of Strain""; ""3.4 Impact of Fin Doping""; ""3.5 Impact of Gate Stack""; ""3.6 Conclusion""; ""References""; ""Chapter 4: Quantum Mechanical Potential Modeling of FinFET""; ""4.1 Introduction""; ""4.2 FinFET Structure""; ""4.2.1 FinFET Design Parameters""; ""4.3 Quantum Mechanical Potential Modeling"" ; ""4.4 Threshold Voltage Modeling""""4.5 Source/Drain Resistance Modeling""; ""4.6 Results and Discussion""; ""4.7 Conclusion""; ""References""; ""Chapter 5: Physical Insight and Correlation Analysis of Finshape Fluctuations and Work-Function Variability in FinFET Devices""; ""5.1 Introduction""; ""5.2 Modeling Approach""; ""5.2.1 LER Modeling""; ""5.2.2 WFV Modeling""; ""5.3 Statistical Analysis of LER- and WFV-Induced Fluctuations""; ""5.4 Correlation-Based Approaches for Variability Estimation""; ""5.4.1 Correlations and Sensitivity Analysis"" ; ""5.4.2 Simplified Approaches for Variability Estimation""""5.4.2.1 Threshold Voltage Variability""; ""5.4.2.2 Drive Current Variability""; ""5.4.3 Physical Insight of Fin LER-Induced Threshold Voltage Increase""; ""5.5 Asymmetric Impact of Localized Fluctuations""; ""5.5.1 Impact of Local Fin Thinning""; ""5.5.2 Impact of Grain Location and Size""; ""5.6 Conclusions""; ""References""; ""Chapter 6: Characteristic and Fluctuation of Multi-fin FinFETs""; ""6.1 Introduction""; ""6.1.1 Random Dopant Fluctuation""; ""6.1.2 Reduction Techniques of Random Dopant Fluctuation"" ; ""6.2 Effect of Channel Fin Aspect Ratio""
• Sommario/riassunto: This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design. Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect Provides the keys to understanding the emerging area of the quantum FinFET Written by leading experts in each research area Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices.
• Titolo autorizzato: Toward Quantum FinFET
• ISBN: 3-319-02021-8
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910438125203321
• Lo trovi qui: Univ. Federico II
• Serie: Lecture Notes in Nanoscale Science and Technology, . 2195-2159 ; ; 17