Semiconductor Power Devices : Physics, Characteristics, Reliability / / by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
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| Autore: |
Lutz Josef
|
| Titolo: |
Semiconductor Power Devices : Physics, Characteristics, Reliability / / by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
|
| Pubblicazione: | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2018 |
| Edizione: | 2nd ed. 2018. |
| Descrizione fisica: | 1 online resource (723 pages) : illustrations |
| Disciplina: | 621.38152 |
| Soggetto topico: | Electronic circuits |
| Electric power production | |
| Electronics | |
| Electronic Circuits and Systems | |
| Electrical Power Engineering | |
| Mechanical Power Engineering | |
| Electronics and Microelectronics, Instrumentation | |
| Persona (resp. second.): | SchlangenottoHeinrich |
| ScheuermannUwe | |
| De DonckerRik | |
| Nota di bibliografia: | Includes bibliographical references at the end of each chapters and index. |
| Nota di contenuto: | Power Semiconductor Devices – Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn-Junctions -- Short Introduction to Power Device Technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device-Induced Oscillations and Electromagnetic Disturbances -- Power Electronic System Integration. |
| Sommario/riassunto: | This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition. |
| Titolo autorizzato: | Semiconductor Power Devices |
| ISBN: | 3-319-70917-8 |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910299939003321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |