Analog Devices and Circuits 1 : Analog Devices

• Autore: Gontrand Christian
• Pubblicazione: Newark : , : John Wiley & Sons, Incorporated, , 2024; ©2023
• Edizione: 1st ed.
• Descrizione fisica: 1 online resource (260 pages)
• Nota di contenuto: Cover -- Title Page -- Copyright Page -- Contents -- Preface -- Introduction -- Chapter 1. Bipolar Junction Transistor -- 1.1. Introduction -- 1.1.1. A schematic technological embodiment of an integrated bipolar junction transistor -- 1.2. Transistor effect -- 1.2.1. Flows and currents -- 1.2.2. Compromises for bipolar junction transistor -- 1.2.3. Configurations and associated current gains -- 1.3. Bipolar junction transistor: some calculations -- 1.3.1. Various modes of operation -- 1.4. The NPN transistor -- Ebers-Moll model (1954: Jewell James Ebers and John L. Moll) -- 1.4.1. Gummel curves -- 1.4.2. Consideration of second-order effects for the static model -- 1.4.3. Early curves -- 1.4.4. Base width modulation -- Early effect -- 1.4.5. Ebers-Moll model wide signals -- 1.4.6. Current gain -- 1.5. Simple bipolar junction transistor model -- 1.6. Network of static characteristics of the bipolar junction transistor -- 1.6.1. Common emitter configuration -- 1.6.2. Common emitter configuration with emitter degeneration -- 1.7. Some applications -- 1.7.1. Current mirrors -- 1.7.2. Differential pair -- 1.7.3. Output stage -- 1.8. Application: operational amplifier -- 1.9. BiCMOS -- Chapter 2. MOSFET -- 2.1. Introduction -- 2.1.1. Base structure -- 2.1.2. Working principle -- 2.2. MOS capability: electric model and curve C(V) -- 2.3. Different types of MOS transistors -- 2.4. A CMOS technological process -- 2.5. Electric modeling of the NMOS enhancement transistor -- 2.6. Off state -- 2.7. Linear or ohmic or unsaturated regime -- 2.7.1. Saturation regime -- 2.7.2. High saturation velocity -- 2.7.3. Static characteristics -- 2.8. Applications -- 2.8.1. Digital inverter -- 2.8.2. Active resistor -- 2.8.3. MOS Single current mirror -- 2.8.4. MOS differential amplifier -- 2.9. Explained technological steps of a CMOS. ; Chapter 3. Devices Dedicated to Radio Frequency: Toward Nanoelectronics -- 3.1. Introduction -- 3.2. Model for HBT SiGeC and device structure -- 3.2.1. Modeling the drift-diffusion equation -- 3.3. MOS of the future? -- 3.3.1. Introduction -- 3.3.2. DGMOS -- 3.3.3. Transport in nanoscale MOSFETs -- 3.3.4. Numerical methods -- 3.4. Conclusion -- 3.5. MATLAB use -- 3.5.1. Computer-aided modelling and simulations: synopsis -- 3.5.2. Calculation of the second elementary member ρ1 -- 3.6. Conclusion -- Appendix -- References -- Index -- EULA.
• Titolo autorizzato: Analog Devices and Circuits 1
• ISBN: 1-394-25547-0; 1-394-25545-4
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910829818503321
• Lo trovi qui: Univ. Federico II