Resistive switching : from fundamentals of nanoionic redox processes to memristive device applications / / edited by Daniele Ielmini and Rainer Waser ; contributors, Hiro Akinaga [and sixty-four others]

• Pubblicazione: Weinheim an der Bergstrasse, Germany : , : Wiley-VCH, , 2016; ©2016
• Descrizione fisica: 1 online resource (954 pages)
• Disciplina: 621.381
• Soggetto topico: Nanoelectronics; Memristors
• Persona (resp. second.): IelminiDaniele; WaserRainer; AkinagaHiro
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references at the end of each chapters and index.
• Nota di contenuto: Related Titles; Title Page; Copyright; Table of Contents; Preface; List of Contributors; Chapter 1: Introduction to Nanoionic Elements for Information Technology; 1.1 Concept of Two-Terminal Memristive Elements; 1.2 Memory Applications; 1.3 Logic Circuits; 1.4 Prospects and Challenges; Acknowledgments; References; Chapter 2: ReRAM Cells in the Framework of Two-Terminal Devices; 2.1 Introduction; 2.2 Two-Terminal Device Models; 2.3 Fundamental Description of Electronic Devices with Memory; 2.4 Device Engineer's View on ReRAM Devices as Two-Terminal Elements; 2.5 Conclusions; Acknowledgment ; ReferencesChapter 3: Atomic and Electronic Structure of Oxides; 3.1 Introduction; 3.2 Crystal Structures; 3.3 Electronic Structure; 3.4 Material Classes and Characterization of the Electronic States; 3.5 Electronic Structure of Selected Oxides; 3.6 Ellingham Diagram for Binary Oxides; Acknowledgments; References; Chapter 4: Defect Structure of Metal Oxides; 4.1 Definition of Defects; 4.2 General Considerations on the Equilibrium Thermodynamics of Point Defects; 4.3 Definition of Point Defects; 4.4 Space-Charge Effects; 4.5 Case Studies; References; Chapter 5: Ion Transport in Metal Oxides ; 5.1 Introduction5.2 Macroscopic Definition; 5.3 Microscopic Definition; 5.4 Types of Diffusion Experiments; 5.5 Mass Transport along and across Extended Defects; 5.6 Case Studies; Acknowledgments; References; Chapter 6: Electrical Transport in Transition Metal Oxides; 6.1 Overview; 6.2 Structure of Transition Metal Oxides; 6.3 Models of Electrical Transport; 6.4 Band Insulators; 6.5 Half-Filled Mott Insulators; 6.6 Temperature-Induced Metal-Insulator Transitions in Oxides; References; Chapter 7: Quantum Point Contact Conduction; 7.1 Introduction ; 7.2 Conductance Quantization in Metallic Nanowires7.3 Conductance Quantization in Electrochemical Metallization Cells; 7.4 Filamentary Conduction and Quantization Effects in Binary Oxides; 7.5 Conclusion and Outlook; References; Chapter 8: Dielectric Breakdown Processes; 8.1 Introduction; 8.2 Basics of Dielectric Breakdown; 8.3 Physics of Defect Generation; 8.4 Breakdown and Oxide Failure Statistics; 8.5 Implications of Breakdown Statistics for ReRAM; 8.6 Chemistry of the Breakdown Path and Inference on Filament Formation; 8.7 Summary and Conclusions; References ; Chapter 9: Physics and Chemistry of Nanoionic Cells9.1 Introduction; 9.2 Basic Thermodynamics and Heterogeneous Equilibria; 9.3 Phase Boundaries and Boundary Layers; 9.4 Nucleation and Growth; 9.5 Electromotive Force; 9.6 General Transport Processes and Chemical Reactions; 9.7 Solid-State Reactions; 9.8 Electrochemical (Electrode) Reactions; 9.9 Stoichiometry Polarization; Summary; Acknowledgments; References; Chapter 10: Electroforming Processes in Metal Oxide Resistive-Switching Cells; 10.1 Introduction; 10.2 Forming Mechanisms; 10.3 Technical Issues Related to Forming ; 10.4 Summary and Outlook
• Titolo autorizzato: Resistive Switching
• ISBN: 3-527-68087-X; 3-527-68094-2; 3-527-68093-4
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910815717603321
• Lo trovi qui: Univ. Federico II