Metal Oxide Semiconductors : Synthesis, Properties, and Devices

• Autore: Zang Zhigang
• Pubblicazione: Newark : , : John Wiley & Sons, Incorporated, , 2023; ©2024
• Edizione: 1st ed.
• Descrizione fisica: 1 online resource (290 pages)
• Soggetto topico: Metallic oxides; Thin film transistors
• Altri autori: CaiWensi ZhouYong
• Nota di contenuto: Cover -- Title Page -- Copyright -- Contents -- Preface -- Chapter 1 Metal Oxide Semiconductors: State‐of‐the‐Art and New Challenges -- 1.1 Introduction -- 1.2 n‐Type Metal Oxide Semiconductors -- 1.2.1 ZnO -- 1.2.2 SnO2 -- 1.2.3 In2O3 -- 1.2.4 TiO2 -- 1.2.5 Ga2O3 -- 1.3 p‐Type Metal Oxide Semiconductors -- 1.3.1 Copper Oxides (CuO/Cu2O) -- 1.3.2 SnO -- 1.3.3 NiOx -- References -- Chapter 2 Fabrication Techniques and Principles -- 2.1 Introduction -- 2.2 Vacuum‐Based Methods -- 2.2.1 Sputtering -- 2.2.2 Atomic Layer Deposition (ALD) -- 2.2.3 Evaporation -- 2.3 Solution‐Based Methods -- 2.3.1 0D Oxide Semiconductors -- 2.3.2 1D Oxide Semiconductors -- 2.3.3 2D Oxide Semiconductors -- 2.3.4 3D Oxide Semiconductors -- References
• Sommario/riassunto: This comprehensive monograph explores the synthesis, properties, and applications of metal oxides (MOS), which are abundant materials found in the Earth's crust and utilized in various advanced technologies. The book delves into the unique electronic structures and charge transport mechanisms of MOS, distinguishing them from traditional inorganic materials like silicon. It covers the fundamental principles and fabrication techniques of metal oxides, focusing on their applications in thin-film transistors, gas sensors, solar cells, UV detectors, and memory devices. Highlighting both n-type and p-type metal oxides, the authors aim to bridge the gap in existing literature by providing a detailed understanding of these materials' potential in emerging fields such as wearable and transparent electronics. The book is intended for researchers, engineers, and students interested in the field of electronic materials and devices.
• Titolo autorizzato: Metal Oxide Semiconductors
• ISBN: 3-527-84255-1; 3-527-84254-3
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910877321803321
• Lo trovi qui: Univ. Federico II