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Autore: |
Gao Jianjun <1968->
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Titolo: |
Optoelectronic integrated circuit design and device modeling [[electronic resource] /] / Jianjun Gao
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Pubblicazione: | Singapore ; ; Hoboken, N.J., : Wiley, c2011 |
Descrizione fisica: | 1 online resource (310 p.) |
Disciplina: | 621.3815 |
Soggetto topico: | Integrated optics |
Optoelectronic devices | |
Note generali: | Description based upon print version of record. |
Nota di bibliografia: | Includes bibliographical references and index. |
Nota di contenuto: | Optoelectronic Integrated Circuit Design and Device Modeling; Contents; Preface; About the Author; Nomenclature; 1 Introduction; 1.1 Optical Communication System; 1.2 Optoelectronic Integrated Circuit Computer-Aided Design; 1.3 Organization of This Book; References; 2 Basic Concept of Semiconductor Laser Diodes; 2.1 Introduction; 2.2 Basic Concept; 2.2.1 Atom Energy; 2.2.2 Emission and Absorption; 2.2.3 Population Inversion; 2.3 Structures and Types; 2.3.1 Homojunction and Heterojunction; 2.3.2 Index Guiding and Gain Guiding; 2.3.3 Fabry-Perot Cavity Lasers; 2.3.4 Quantum-Well Lasers |
2.3.5 Distributed Feedback Lasers2.3.6 Vertical-Cavity Surface-Emitting Lasers; 2.4 Laser Characteristics; 2.4.1 Single-Mode Rate Equations; 2.4.2 Multimode Rate Equations; 2.4.3 Small-Signal Intensity Modulation; 2.4.4 Small-Signal Frequency Modulation; 2.4.5 Large-Signal Transit Response; 2.4.6 Second Harmonic Distortion; 2.4.7 Relative Intensity Noise; 2.4.8 Measurement Technique; 2.5 Summary; References; 3 Modeling and Parameter Extraction Techniques of Lasers; 3.1 Introduction; 3.2 Standard Double Heterojunction Semiconductor Lasers; 3.2.1 Large-Signal Model; 3.2.2 Small-Signal Model | |
3.2.3 Noise Model3.3 Quantum-Well Lasers; 3.3.1 One-Level Equivalent Circuit Model; 3.3.2 Two-Level Equivalent Circuit Model; 3.3.3 Three-Level Equivalent Circuit Model; 3.4 Parameter Extraction Methods; 3.4.1 Direct-Extraction Method; 3.4.2 Semi-Analytical Method; 3.5 Summary; References; 4 Microwave Modeling Techniques of Photodiodes; 4.1 Introduction; 4.2 Physical Principles; 4.3 Figures of Merit; 4.3.1 Responsivity; 4.3.2 Quantum Efficiency; 4.3.3 Absorption Coefficient; 4.3.4 Dark Current; 4.3.5 Rise Time and Bandwidth; 4.3.6 Noise Currents; 4.4 Microwave Modeling Techniques | |
4.4.1 PIN PD4.4.2 APD; 4.5 Summary; References; 5 High-Speed Electronic Semiconductor Devices; 5.1 Overview of Microwave Transistors; 5.2 FET Modeling Technique; 5.2.1 FET Small-Signal Modeling; 5.2.2 FET Large-Signal Modeling; 5.2.3 FET Noise Modeling; 5.3 GaAs/InP HBT Modeling Technique; 5.3.1 GaAs/InP HBT Nonlinear Model; 5.3.2 GaAs/InP HBT Linear Model; 5.3.3 GaAs/InP HBT Noise Model; 5.3.4 Parameter Extraction Methods; 5.4 SiGe HBT Modeling Technique; 5.5 MOSFET Modeling Technique; 5.5.1 MOSFET Small-Signal Model; 5.5.2 MOSFET Noise Model; 5.5.3 Parameter Extraction Methods; 5.6 Summary | |
References6 Semiconductor Laser and Modulator Driver Circuit Design; 6.1 Basic Concepts; 6.1.1 NRZ and RZ Data; 6.1.2 Optical Modulation; 6.1.3 Optical External Modulator; 6.2 Optoelectronic Integration Technology; 6.2.1 Monolithic Optoelectronic Integrated Circuits; 6.2.2 Hybrid Optoelectronic Integrated Circuits; 6.3 Laser Driver Circuit Design; 6.4 Modulator Driver Circuit Design; 6.4.1 FET-Based Driver Circuit; 6.4.2 Bipolar Transistor-Based Driver Integrated Circuit; 6.4.3 MOSFET-Based Driver Integrated Circuit; 6.5 Distributed Driver Circuit Design; 6.6 Passive Peaking Techniques | |
6.6.1 Capacitive Peaking Techniques | |
Sommario/riassunto: | In Optoelectronic Integrated Circuit Design and Device Modeling, Professor Jianjun Gao introduces the fundamentals and modeling techniques of optoelectronic devices used in high-speed optical transmission systems. Gao covers electronic circuit elements such as FET, HBT, MOSFET, as well as design techniques for advanced optical transmitter and receiver front-end circuits. The book includes an overview of optical communication systems and computer-aided optoelectronic IC design before going over the basic concept of laser diodes. This is followed by modeling and parameter extraction techn |
Titolo autorizzato: | Optoelectronic integrated circuit design and device modeling ![]() |
ISBN: | 0-470-82736-X |
1-280-76796-0 | |
9786613678737 | |
0-470-82838-2 | |
0-470-82735-1 | |
Formato: | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione: | Inglese |
Record Nr.: | 9910140875803321 |
Lo trovi qui: | Univ. Federico II |
Opac: | Controlla la disponibilità qui |