Graphene for post-Moore silicon optoelectronics / / Yang Xu [and four others]

• Pubblicazione: Hoboken, NJ : , : John Wiley & Sons, Inc., , [2023]; ©2023
• Descrizione fisica: 1 online resource (195 pages)
• Disciplina: 621.381045
• Soggetto topico: Optoelectronics - Materials; Graphene
• Persona (resp. second.): XuYang
• Nota di contenuto: Cover -- Title Page -- Copyright Page -- Contents -- Preface -- Acknowledgments -- Biography -- Chapter 1 Graphene for Silicon Optoelectronics -- 1.1 Introduction -- 1.2 Optical Absorption -- 1.3 Emergence of Graphene in Silicon Optoelectronics -- 1.4 Photodetection in Graphene -- 1.4.1 Performance Metrics -- 1.4.2 Photovoltaic Effect -- 1.4.3 Photoemission in Graphene Schottky Junctions -- 1.4.4 Thermionic Emission in Graphene-based Interfaces -- 1.4.5 Hot Electron-based Photodetection -- 1.4.5.1 Photothermoelectric Effect (PTE) -- 1.4.5.2 Photobolometric Effect (PBE) -- 1.4.5.3 Photothermionic (PTI) Effect -- 1.4.5.4 Photogating Effect -- 1.4.6 Infrared Modulators -- 1.4.7 Photovoltaic Devices -- 1.5 Outlook -- References -- Chapter 2 Growth and Transfer of Graphene for Silicon Optoelectronics -- 2.1 Introduction -- 2.2 Growth of Graphene -- 2.2.1 Growth Dynamics of CVD Gr and Choice of Substrate -- 2.2.2 Growth on Metallic Substrates -- 2.2.3 Direct Growth on Dielectric Substrates -- 2.2.4 Direct Growth on Semiconductor Substrates -- 2.2.5 Large-scale CVD Growth of Graphene -- 2.3 Dielectric Deposition on Graphene -- 2.4 Graphene Transfer Methods -- 2.5 Fabrication of Solution-processed Graphene and Integration with Silicon -- 2.6 Graphene Transfer on Flexible Silicon -- 2.7 Graphene Integration with Silicon in CMOS Process -- 2.8 Challenges and Future Prospectives -- References -- Chapter 3 Physics of Graphene/Silicon Junctions -- 3.1 Introduction -- 3.2 Physics of Schottky Junction -- 3.3 Measurement of Schottky Barrier Height -- 3.3.1 Capacitance Voltage Measurement -- 3.3.2 Current-Voltage Measurement -- 3.3.3 Photoelectric Measurement -- 3.3.4 Thermionic Emission Measurements -- 3.4 2D Materials and Schottky Junctions -- 3.5 Challenges and Future Prospective -- References. ; Chapter 4 Graphene/Silicon Junction for High-performance Photodetectors -- 4.1 Introduction -- 4.2 Ultraviolet Photodetectors -- 4.3 Visible to Near-infrared Photodetector -- 4.4 Broadband Photodetectors -- 4.5 Hybrid Gr/Si Photodetectors -- 4.6 Challenges and Perspectives -- References -- Chapter 5 Graphene/Silicon Solar Energy Harvesting Devices -- 5.1 Introduction -- 5.2 Photovoltaic Mechanism and Performance Parameters of Graphene/Silicon Solar Cells -- 5.3 Theoretical Efficiency Limits of Graphene Silicon Solar Cells -- 5.4 Optimization of Graphene/Silicon Solar Cells -- 5.4.1 Doping of Graphene -- 5.4.2 Light Trapping in Silicon -- 5.4.3 Antireflection Coating -- 5.4.4 Interface Engineering -- 5.4.5 Surface Passivation -- 5.5 Challenges and Perspectives -- References -- Chapter 6 Graphene Silicon-integrated Waveguide Devices -- 6.1 Introduction -- 6.2 Hybrid Waveguide Photodetector -- 6.3 Hybrid Waveguide Modulator -- 6.3.1 Electro-optical Modulator -- 6.3.2 Thermo-optic Modulator -- 6.4 Challenges and Prospectives -- References -- Chapter 7 Graphene for Silicon Image Sensor -- 7.1 Introduction -- 7.2 Quantum Dot-based Infrared Graphene Image Sensor -- 7.3 Graphene Thermopile Image Sensor -- 7.4 Graphene THz Image Sensor -- 7.5 Curved Image Sensor Array -- 7.6 Neural Network Image Sensors -- 7.7 Graphene Charge-coupled Device Image Sensor -- 7.8 Graphene-based Position-sensitive Detector -- 7.9 Challenges and Perspectives -- Chapter 8 System Integration with Graphene for Silicon Optoelectronics -- 8.1 Introduction -- 8.2 Graphene Silicon Flip Chips -- 8.3 Graphene Silicon Heterogeneous Integration -- 8.4 Graphene Silicon Monolithic Integration for Optoelectronics Applications -- 8.5 Challenges and Prospective -- References -- Chapter 9 Graphene for Silicon Optoelectronic Synaptic Devices -- 9.1 Introduction -- 9.2 Silicon Neurons. ; 9.3 Synaptic Devices -- 9.4 Silicon Optoelectronic Synaptic Devices -- 9.5 ORAM Synaptic Devices -- 9.6 Graphene for Silicon Synaptic Devices -- 9.7 Synaptic Phototransistor -- 9.8 Broadband, Low-power Optoelectronic Synaptic Devices -- 9.9 Challenges and Prospects -- References -- Chapter 10 Challenges and Prospects of Graphene-Silicon Optoelectronics -- 10.1 Emergence of Wafer‐scale Systems -- 10.2 Wafer‐scale Synthesis and Foundry Process -- 10.3 Scalable Transfer and Quality Metrics -- 10.4 Scaling Laws and Hot‐electron Effects -- 10.5 Optical Modulators -- 10.6 Infrared Photodetectors -- 10.7 Neuromorphic Optoelectronics -- References -- Index -- EULA.
• Titolo autorizzato: Graphene for post-Moore silicon optoelectronics
• ISBN: 3-527-84101-6; 3-527-84099-0
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910830795803321
• Lo trovi qui: Univ. Federico II