Rare earth and transition metal doping of semiconductor materials : synthesis, room magnetic properties and temperature spintronics / / edited by V. Dierolf, I. T. Ferguson, J. M. Zavada ; contributors, H. Asahi [and thirty-three others]

• Pubblicazione: Amsterdam, [Netherlands] : , : Woodhead Publishing, , 2016; ©2016
• Descrizione fisica: 1 online resource (472 p.)
• Disciplina: 546.6
• Soggetto topico: Transition metal compounds
• Persona (resp. second.): DierolfVolkmar <1960->; FergusonIan T.; ZavadaJ. M.; AsahiHideaki <1946->
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references at the end of each chapters and index.
• Nota di contenuto: Front Cover; Related titles; Rare Earth and Transition Metal Doping of Semiconductor Materials; Copyright; Contents; List of contributors; Woodhead Publishing Series in Electronic and Optical Materials; One - Theory of magnetism in III-V semiconductors; 1 - Computational nanomaterials design for nanospintronics: room-temperature spintronics applications; 1.1 Introduction; 1.2 Disordered dilute magnetic semiconductors; 1.2.1 p-d exchange and double exchange mechanisms; 1.2.2 Reliable calculation of TC; 1.2.3 Toward high TC; 1.3 Spinodal nanodecomposition and high blocking temperature ; 1.3.1 Mixing energy1.3.2 Chemical pair interaction; 1.3.3 Simulation of the spinodal nanodecomposition: Dairiseki phase versus Konbu phase; 1.3.3.1 Dairiseki phase; 1.3.3.2 Konbu phase; 1.3.4 Superparamagnetic blocking phenomena; 1.4 Rare-earth impurities in gallium nitride; 1.4.1 High-efficiency light emission; 1.4.2 High-density doping; 1.4.3 Zener's p-f exchange interaction; 1.4.4 Circularly polarized luminescence; 1.4.5 Summary; 1.5 MgO-based high-TC nanospintronics; References ; 2 - Electronic structure of magnetic impurities and defects in semiconductors: a guide to the theoretical models2.1 Introduction; 2.2 Electronic structure of transition-metal and rare-earth elements in semiconductors; 2.2.1 Basic energy level scheme; 2.2.2 Multiplet splittings for f electrons and Hund's rules; 2.3 Computational methods dealing with strongly correlated electrons; 2.3.1 Failures of density functional theory; 2.3.2 Hubbard U correction: LDA+U and SIC; 2.3.3 Hybrid functionals; 2.3.4 The GW method; 2.3.5 Dynamic mean field theory; 2.3.6 Concluding remarks; 2.4 Magnetism ; 2.4.1 Magnetic moments, ferromagnetic and antiferromagnetic coupling2.4.1.1 Introductory remarks; 2.4.1.2 Mapping of total energy differences on a Heisenberg model; 2.4.1.3 Liechtenstein's linear response theory; 2.4.1.4 Disordered local moments theory; 2.4.2 Spatial fluctuations of magnetic moments; 2.4.3 Percolation theory; 2.4.4 Effects of different underlying electronic structure methods; 2.4.5 Calculating critical temperatures; 2.4.6 Spinodal decomposition; 2.4.7 d0 magnetism: role of defects in magnetism; 2.4.8 Model exchange mechanisms; 2.5 Case study: Gd in GaN ; 2.5.1 Introduction and experimental literature2.5.2 Models for explaining the magnetism; 2.5.2.1 Sphere of influence model; 2.5.2.2 s-f coupling model; 2.5.2.3 Ga vacancies; 2.5.2.4 Critique of the vacancy model; 2.5.2.5 Interstitials; 2.5.2.6 Analysis of exchange interactions; 2.5.2.7 Ga-vacancy clusters; 2.5.2.8 Results of percolation theory; 2.5.2.9 Fermi-level pinning near clusters; 2.5.3 Growth simulations of clustering; 2.5.3.1 Experimental evidence for clustering and role of extended defects; 2.5.3.2 Discussion; 2.5.4 Summary; Acknowledgments; References ; 3 - Energetics, atomic structure, and magnetics of rare earth-doped GaN bulk and nanoparticles
• Titolo autorizzato: Rare earth and transition metal doping of semiconductor materials
• ISBN: 0-08-100060-X
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910809671503321
• Lo trovi qui: Univ. Federico II
• Serie: Woodhead Publishing series in electronic and optical materials ; ; 87.