Novel three-state quantum dot gate field effect transistor : fabrication, modeling and applications / / Supriya Karmakar

• Autore: Karmakar Supriya
• Pubblicazione: New Delhi : , : Springer, , 2014
• Edizione: 1st ed. 2014.
• Descrizione fisica: 1 online resource (xiv, 134 pages) : illustrations (some color)
• Disciplina: 621.3815284
• Soggetto topico: Field-effect transistors
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Introduction: Multi State Devices and Logic -- Quantum Dot Gate Field Effect Transistor Device Structures -- Quantum Dot Gate Field Effect Transistors Fabrication and Characterization -- Quantum DOT Gate Field Effect Transistors Theory and Device Modeling -- Quantum Dot Gate NMOS Inverter -- Quantum Dot Gate Field Effect Transistor (QDGFET): Circuit Model and Ternary Logic Inverter -- Analog-to-Digital Converter (ADC) and Digital-to-Analog Converter (DAC) Using Quantum DOT Gate Field Effect Transistor (QDGFET) -- Performance in SUB-25nm Range -- Conclusions.
• Sommario/riassunto: The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.
• Titolo autorizzato: Novel Three-state Quantum Dot Gate Field Effect Transistor
• ISBN: 81-322-1635-0
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910299709003321
• Lo trovi qui: Univ. Federico II