ISTFA 2012 : conference proceedings from the 38th International Symposium for Testing and Failure Analysis : November 11-15, 2012, Phoenix Convention Center, Phoenix, Arizona, USA

• Pubblicazione: Materials Park, Ohio, : ASM International, 2012
• Edizione: 1st ed.
• Descrizione fisica: 1 online resource (642 p.)
• Soggetto topico: Electronics - Materials - Testing; Electronic apparatus and appliances - Testing
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: ""Title Page""; ""Copyright""; ""Board of Directors""; ""Organizing Committee""; ""Symposium Committee""; ""User Groups""; ""Contents""; ""2012 IPFA Best Paper""; ""Laser Voltage Probing in Failure Analysis of Advanced Integrated Circuits on SOI""; ""Emerging Concepts and Techniques""; ""Closer to the Theoretical Limit: Spherical Corrections to Aplanatic Solid Immersion Imaging with Adaptive Optics""; ""Fault Isolation of Open Defects Using Space Domain Reflectometry""; ""Localization of Dead Open in a Solder Bump by Space Domain Reflectometry"" ; ""Advanced Fault Isolation Technique Using Electro-Optical Terahertz Pulse Reflectometry (EOTPR) for 2D and 2.5D Flip-Chip Package""""Novel Plasma FIB/SEM for High Speed Failure Analysis and Real Time Imaging of Large Volume Removal""; ""FemtoFarad/TeraOhm Endpoint Detection for Microsurgery of Integrated Circuit Devices""; ""Fault Isolation and Failure Analysis of TSV""; ""Cross Section Analysis of Cu Filled TSVs Based On High Throughput Plasma- FIB Milling""; ""Microstructural Considerations on the Reliability of 3D Packaging"" ; ""High-Frequency TSV Failure Detection Method with Z Parameter""""Enhanced Failure Analysis on Open TSV Interconnects""; ""Nanoprobing Techniques""; ""A New Technique for Non-Invasive Short-Localisation in Thin Dielectric Layers by Electron Beam Absorbed Current (EBAC) Imaging""; ""Precise Localization of 28 nm via Chain Resistive Defect Using EBAC and Nanoprobing""; ""In FAB 300 mm Wafer Level Atomic Force Probe Characterization""; ""Nanoelectronic Analog Circuit PFA â€? The Return of Circuit Level Probing""; ""Fault Isolation and Failure Analysis of 3D Packages"" ; ""Enhanced Comparison of Lock-in Thermography and Magnetic Microscopy for 3D Defect Localization of System in Packages""""Non Destructive Failure Analysis of 3D Electronic Packages Using Both Electro Optical Terahertz Pulse Reflectometry and 3D X-ray Computed Tomography""; ""Failure Analysis Using Scanning Acoustic Microscopy for Diagnostics of Electronic Devices and 3D System Integration Technologies""; ""Nanoprobing Applications""; ""Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90 nm Node CMOS Technology"" ; ""Study of Static Noise Margin, Cell Stability and Influence of Electron Beam on Sub-30 nm SRAM Using SEM-Based Nanoprobing with 8 Nanoprobes""""Leaky Device Channel Anomaly Identification and Case Study by Nano-Probing Technique, Curve Fitting, and Model Analysis""; ""Photon Based Techniques: An Understanding""; ""Photon Emission Spectra of FETs as Obtained by InGaAs Detector""; ""Near-Infrared Photon Emission Spectroscopy Trends in Scaled SOI Technologies"" ; ""Characterization and TCAD Simulation of 90 nm Technology PMOS Transistor Under Continuous Photoelectric Laser Stimulation for Failure Analysis Improvement""
• Sommario/riassunto: This volume features the latest research and practical data from the premier event for the microelectronics failure analysis community. The papers cover a wide range of testing and failure analysis topics of practical value to anyone working to detect, understand, and eliminate electronic device and system failures. Case histories and review papers are included, as well as guides to new and unique tools and methodologies, applications and results.
• Titolo autorizzato: ISTFA 2012
• ISBN: 1-68015-512-1; 1-61503-995-3
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910959787803321
• Lo trovi qui: Univ. Federico II