SiGe heterojunction bipolar transistors [[electronic resource] /] / Peter Ashburn

• Autore: Ashburn Peter
• Pubblicazione: Hoboken, NJ, : John Wiley & Sons, c2003
• Descrizione fisica: 1 online resource (288 p.)
• Disciplina: 621.313; 621.3815282
• Soggetto topico: Bipolar transistors; Silicon; Germanium
• Soggetto genere / forma: Electronic books.
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: SiGe Heterojunction Bipolar Transistors; Contents; Preface; Physical Constants and Properties of Silicon and Silicon-Germanium; List of Symbols; 1 Introduction; 1.1 Evolution of Silicon Bipolar Technology; 1.2 Evolution of Silicon-Germanium HBT Technology; 1.3 Operating Principles of the Bipolar Transistor; References; 2 Basic Bipolar Transistor Theory; 2.1 Introduction; 2.2 Components of Base Current; 2.3 Fundamental Equations; 2.3.1 Assumptions; 2.4 Base Current; 2.4.1 Base Current in Shallow Emitters; 2.4.2 Base Current in Deep Emitters; 2.4.3 Recombination Current in the Neutral Base ; 2.5 Collector Current2.6 Current Gain; 2.7 Gummel Numbers; 3 Heavy Doping Effects; 3.1 Introduction; 3.2 Majority and Minority Carrier Mobility; 3.3 Bandgap Narrowing; 3.4 Minority Carrier Lifetime; 3.5 Gain and Heavy Doping Effects; 3.6 Non-uniform Doping Profiles; References; 4 Second-Order Effects; 4.1 Introduction; 4.2 Low Current Gain; 4.2.1 Recombination via Deep Levels; 4.2.2 Recombination Current in the Forward Biased Emitter/Base Depletion Region; 4.2.3 Generation Current in a Reverse Biased pn Junction; 4.2.4 Origins of Deep Levels in Bipolar Transistors; 4.3 High Current Gain ; 4.4 Basewidth Modulation4.5 Series Resistance; 4.6 Junction Breakdown; 4.6.1 Punch-through; 4.6.2 Zener Breakdown; 4.6.3 Avalanche Breakdown; 4.6.4 Junction Breakdown in Practice; 4.6.5 Common Base and Common Emitter Breakdown Voltages; 4.6.6 Trade-off between Gain and BV(CEO); References; 5 High-frequency Performance; 5.1 Introduction; 5.2 Forward Transit Time t(F); 5.2.1 Components of t(F); 5.2.2 Base Transit Time; 5.2.3 Emitter Delay; 5.2.4 Collector/Base Depletion Region Transit Time; 5.2.5 Emitter/Base Depletion Region Delay; 5.3 Cut-off Frequency f(T) ; 5.4 Maximum Oscillation Frequency f(max)5.5 Kirk Effect; 5.6 Base, Collector and Emitter Resistance; 5.6.1 Base Resistance; 5.6.2 Collector Resistance; 5.7 Emitter/Base and Collector/Base Depletion Capacitance; 5.8 Quasi-saturation; 5.9 Current Crowding; References; 6 Polysilicon Emitters; 6.1 Introduction; 6.2 Basic Fabrication and Operation of Polysilicon Emitters; 6.3 Diffusion in Polysilicon Emitters; 6.4 Influence of the Polysilicon/Silicon Interface; 6.5 Base Current in Polysilicon Emitters; 6.6 Effective Surface Recombination Velocity; 6.7 Emitter Resistance ; 6.8 Design of Practical Polysilicon Emitters6.8.1 Break-up of the Interfacial Oxide Layer and Epitaxial Regrowth; 6.8.2 Epitaxially Regrown Emitters; 6.8.3 Trade-off between Emitter Resistance and Current Gain in Polysilicon Emitters; 6.8.4 Emitter Plug Effect and in situ Doped Polysilicon Emitters; 6.9 pnp Polysilicon Emitters; References; 7 Properties and Growth of Silicon-Germanium; 7.1 Introduction; 7.2 Materials Properties of Silicon-Germanium; 7.2.1 Pseudomorphic Silicon-Germanium; 7.2.2 Critical Thickness; 7.2.3 Band Structure of Silicon-Germanium ; 7.3 Physical Properties of Silicon-Germanium
• Sommario/riassunto: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features:SiGe products include chip sets for wireless cellular handsets
• Titolo autorizzato: SiGe heterojunction bipolar transistors
• ISBN: 1-280-26903-0; 9786610269037; 0-470-09073-1; 0-470-09074-X
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910143229303321
• Lo trovi qui: Univ. Federico II