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Insulated gate bipolar transistor (IGBT) : theory and design / / Vinod Kumar Khanna



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Autore: Khanna Vinod Kumar <1952-> Visualizza persona
Titolo: Insulated gate bipolar transistor (IGBT) : theory and design / / Vinod Kumar Khanna Visualizza cluster
Pubblicazione: Piscataway, New Jersey : , : IEEE Press, , c2003
[Piscataqay, New Jersey] : , : IEEE Xplore, , [2005]
Descrizione fisica: 1 online resource (648 p.)
Disciplina: 621.3815
621.3815282
Soggetto topico: Insulated gate bipolar transistors
Soggetto non controllato: Electrical and Electronics Engineering
Note generali: Description based upon print version of record.
Nota di bibliografia: Includes bibliographical references and index.
Nota di contenuto: Preface. -- Power Device Evolution and the Advert of IGBT. -- IGBT Fundamentals and Status Review. -- MOS Components of IGBT. -- Bipolar Components of IGBT. -- Physics and Modeling of IGBT. -- Latch-Up of Parasitic Thyristor in IGBT. -- Design Considerations of IGBT Unit Cell. -- IGBT Process Design and Fabrication Technology. -- Power IGBT Modules. -- Novel IGBT Design Concepts, Structural Innovations, and Emerging Technologies. -- IGBT Circuit Applications. -- Index.
Sommario/riassunto: A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. . All-in-one resource. Explains the fundamentals of MOS and bipolar physics.. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Altri titoli varianti: IGBT
Titolo autorizzato: Insulated gate bipolar transistor (IGBT)  Visualizza cluster
ISBN: 1-280-54207-1
9786610542079
0-471-66099-X
0-471-72291-X
Formato: Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione: Inglese
Record Nr.: 996201916603316
Lo trovi qui: Univ. di Salerno
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