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Autore: | Khanna Vinod Kumar <1952-> |
Titolo: | Insulated gate bipolar transistor (IGBT) : theory and design / / Vinod Kumar Khanna |
Pubblicazione: | Piscataway, New Jersey : , : IEEE Press, , c2003 |
[Piscataqay, New Jersey] : , : IEEE Xplore, , [2005] | |
Descrizione fisica: | 1 online resource (648 p.) |
Disciplina: | 621.3815 |
621.3815282 | |
Soggetto topico: | Insulated gate bipolar transistors |
Soggetto non controllato: | Electrical and Electronics Engineering |
Note generali: | Description based upon print version of record. |
Nota di bibliografia: | Includes bibliographical references and index. |
Nota di contenuto: | Preface. -- Power Device Evolution and the Advert of IGBT. -- IGBT Fundamentals and Status Review. -- MOS Components of IGBT. -- Bipolar Components of IGBT. -- Physics and Modeling of IGBT. -- Latch-Up of Parasitic Thyristor in IGBT. -- Design Considerations of IGBT Unit Cell. -- IGBT Process Design and Fabrication Technology. -- Power IGBT Modules. -- Novel IGBT Design Concepts, Structural Innovations, and Emerging Technologies. -- IGBT Circuit Applications. -- Index. |
Sommario/riassunto: | A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. . All-in-one resource. Explains the fundamentals of MOS and bipolar physics.. Covers IGBT operation, device and process design, power modules, and new IGBT structures. |
Altri titoli varianti: | IGBT |
Titolo autorizzato: | Insulated gate bipolar transistor (IGBT) |
ISBN: | 1-280-54207-1 |
9786610542079 | |
0-471-66099-X | |
0-471-72291-X | |
Formato: | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione: | Inglese |
Record Nr.: | 996201916603316 |
Lo trovi qui: | Univ. di Salerno |
Opac: | Controlla la disponibilità qui |