Two-Dimensional Transition-Metal Dichalcogenides : Phase Engineering and Applications in Electronics and Optoelectronics

• Autore: Tang Chi Sin
• Pubblicazione: Newark : , : John Wiley & Sons, Incorporated, , 2023; ©2024
• Edizione: 1st ed.
• Descrizione fisica: 1 online resource (346 pages)
• Disciplina: 620.112
• Soggetto topico: Two-dimensional materials; Electronic structure
• Altri autori: YinXinmao WeeAndrew T. S
• Nota di contenuto: Cover -- Title Page -- Copyright -- Contents -- Preface -- Chapter 1 Two‐dimensional Transition Metal Dichalcogenides: A General Overview -- 1.1 Introduction to 2D‐TMDs -- 1.2 Crystal Structures of 2D‐TMDs in Different Phases -- 1.2.1 Other Structural Phases -- 1.2.2 Phase Stability -- 1.3 Electronic Band Structures of 2D‐TMDs -- 1.3.1 Electronic Band Structures of the 1H, 1T, and 1T′ Phase -- 1.3.2 Indirect‐to‐Direct Bandgap Transition -- 1.3.3 Spin‐Orbit Coupling and Its Effects and Optical Selection Rules -- 1.4 Excitons (Coulomb‐Bound Electron‐Hole Pairs) -- 1.4.1 Exciton Binding Energy -- 1.4.2 Excitons and Other Complex Quasiparticles -- 1.4.3 Resonant Excitons in 2D‐TMDs -- 1.5 Experimental Studies and Characterization of 2D‐TMDs -- 1.5.1 Synthesis of 2D‐TMDs -- 1.5.1.1 Chemical Vapour Deposition -- 1.5.1.2 Molecular Beam Epitaxy -- 1.5.2 Optical Characterization -- 1.5.2.1 Photoluminescence -- 1.5.2.2 Spectroscopic Ellipsometry -- 1.5.2.3 Raman Characterization -- 1.5.3 Electronic Bandgap -- 1.5.3.1 Angle‐Resolved Photoemission Spectroscopy -- 1.5.3.2 Scanning Tunneling Spectroscopy (STS) -- 1.5.4 Conclusions -- References -- Chapter 2 Synthesis and Phase Engineering of Low‐Dimensional TMDs and Related Material Structures -- 2.1 Introduction -- 2.2 Structure of 2D TMDs -- 2.3 Synthesis of 2D TMDs -- 2.3.1 Top‐Down Method -- 2.3.2 Bottom‐Up Method -- 2.4 Phase Engineering of 2D TMDs -- 2.4.1 Direct Synthesis of TMDs with Targeted Phases -- 2.4.1.1 Precursor Selection -- 2.4.1.2 Catalyst -- 2.4.1.3 Temperature Control -- 2.4.1.4 Alloying -- 2.4.2 External Factor‐Induced Phase Transformation -- 2.4.2.1 Ion Intercalation -- 2.4.2.2 Thermal Treatment -- 2.5 Conclusion -- References -- Chapter 3 Thermoelectric Properties of Polymorphic 2D‐TMDs -- 3.1 Introduction to 2D Thermoelectrics -- 3.1.1 Why 2D over 3D? -- 3.1.2 Why 2D Semiconductors?. ; 3.2 Thermoelectric Transport -- 3.2.1 Boltzmann Transport Equation -- 3.2.2 Scattering Parameter for Different Mechanism -- 3.2.2.1 Ionized/Charged Impurity Scattering -- 3.2.2.2 Phonons Scattering -- 3.2.2.3 Carrier-Carrier Scattering -- 3.2.2.4 Surface Roughness Scattering -- 3.3 Experimental Characterization TE in 2D -- 3.3.1 Electrical Measurements -- 3.3.1.1 FET Measurements -- 3.3.1.2 Hall Measurements -- 3.3.2 Seebeck Measurement -- 3.3.2.1 ΔT Calibration -- 3.3.2.2 VTEP Measurement -- 3.3.3 Thermal Conductivity -- 3.3.3.1 Raman Spectrometer -- 3.3.3.2 TDTR (FDTR) -- 3.3.3.3 Thermal Bridge Method (Electron Beam Heating Technique) -- 3.3.3.4 Other Thermal Property Measurement Methods -- 3.4 Manipulation of TE Properties in 2D -- 3.4.1 Tuning of Carrier Concentration -- 3.4.2 Strain Engineering -- 3.4.3 Band Engineering -- 3.4.3.1 Layer Thickness and Band Convergence -- 3.4.4 Phase Transition -- 3.5 Future Outlook and Perspective -- References -- Chapter 4 Emerging Electronic Properties of Polymorphic 2D‐TMDs -- 4.1 Electronic Structure and Optical Properties of 2D‐TMDs -- 4.1.1 Electronic and Optical Properties of 1H‐Phase 2D‐TMDs -- 4.1.2 Electronic and Optical Properties of 1T‐Phase 2D‐TMDs -- 4.2 Polaron States of 2D‐TMDs -- 4.2.1 Holstein Polarons in MoS2 -- 4.2.1.1 Experimental Characterizations of Holstein Polarons -- 4.2.1.2 Theoretical Simulations of the Spectral Functions -- 4.2.2 Asymmetric Intervalley Polaron Effects on Band Edges of 2D‐TMDs -- 4.2.3 Polaron Effects on the Band Gap Size of 2D‐TMDs -- 4.3 Valley Properties of 2D‐TMDs -- 4.3.1 Circularly Polarized Light -- 4.3.2 External Field -- 4.3.3 Magnetic Metal Doping -- 4.3.4 Magnetic Substrate -- 4.4 Charge Density Waves of 2D‐TMDs -- 4.4.1 Charge Density Waves in TMDs -- 4.4.2 Effects of CDW on Electronic Properties -- 4.4.3 Mechanisms in CDW Transitions. ; 4.4.4 Manipulation of CDWs -- 4.5 Janus Structures of 2D‐TMDs -- 4.5.1 Fabrication Approaches for Janus 2D TMDs -- 4.5.2 Emerging Properties of Janus 2D TMDs -- 4.5.3 Potential Applications of Janus 2D TMDs -- 4.6 Moiré Superlattices of 2D‐TMDs -- References -- Chapter 5 Magnetism and Spin Structures of Polymorphic 2D TMDs -- 5.1 Two‐dimensional Ferromagnetism -- 5.2 Cr‐based Magnetic Materials and Device Applications -- 5.3 Polymorphic 2D Cr‐based Magnetic TMDs -- 5.4 Magnetism in 2D Vanadium, Ion, Manganese Chalcogenides -- 5.5 Conclusions and Outlook -- Acknowledgements -- References -- Chapter 6 Recent Progress of Mechanical Exfoliation and the Application in the Study of 2D Materials -- 6.1 Introduction -- 6.2 Different Ways for Preparing 2D Materials -- 6.2.1 Chemical Vapor Deposition (CVD) -- 6.2.2 Mechanical Exfoliation (ME) -- 6.3 New Mechanical Exfoliation Methods -- 6.3.1 Oxygen Plasma Enhanced Exfoliation -- 6.3.2 Gold Film Enhanced Exfoliation -- 6.4 Application of Mechanical Exfoliation Method -- 6.4.1 Electrical Properties and Devices -- 6.4.1.1 Screening of Disorders -- 6.4.1.2 Electrical Contacts of 2D Materials -- 6.4.2 Optical Properties and Photonic Devices -- 6.4.2.1 Photodetectors -- 6.4.2.2 Optical Modulators -- 6.4.2.3 Single Photon Emitters -- 6.4.3 Moiré Superlattice and Devices -- 6.4.3.1 Graphene/h‐BN Moiré Superlattice -- 6.4.3.2 Twisted Graphene Moiré Superlattice -- 6.4.3.3 Twisted TMD Moiré Superlattice -- 6.4.4 Magnetic Properties and Memory Devices -- 6.4.4.1 Ferromagnetism in 2D Materials -- 6.4.4.2 Antiferromagnetism in 2D Materials -- 6.4.5 Thermal Conduction -- 6.4.6 Superconductors -- 6.4.6.1 2D Superconductors and Their Characteristics -- 6.4.6.2 Regulation Methods -- 6.5 Summary and Outlook -- Acknowledgments -- References. ; Chapter 7 Applications of Polymorphic Two‐Dimensional Transition Metal Dichalcogenides in Electronics and Optoelectronics -- 7.1 Field‐Effect Transistors (FETs) -- 7.1.1 Homojunction‐based FETs Formed by Phase Transition -- 7.1.2 Homojunction‐based FETs Formed by Direct Synthesis -- 7.2 Memory and Neuromorphic Computing -- 7.3 Energy Harvesting -- 7.4 Photodetectors -- 7.5 Solar Cells -- 7.6 Perspectives -- References -- Chapter 8 Polymorphic Two‐dimensional Transition Metal Dichalcogenides: Modern Challenges and Opportunities -- 8.1 Summing up the Chapters -- 8.2 Projecting the Future: Challenges and Opportunities -- 8.3 Global Challenges and Threats -- 8.3.1 Clean and Renewable Energy Sources -- 8.3.2 Water Treatment and Access to Clean Water -- 8.3.3 Healthcare and Pandemic Intervention -- 8.3.4 Food Safety and Security -- 8.3.4.1 Agricultural Production, Sustainability, Productivity, and Protection -- 8.3.4.2 Roles of 2D‐TMDs in Food Packaging and Preservation -- 8.4 Exponential Growth in Demands for Modern Computation -- 8.4.1 Deep Learning and Artificial Intelligence -- 8.4.2 Internet of Things and Data Overload -- 8.5 Conclusion -- References -- Index -- EULA.
• Sommario/riassunto: This book provides a comprehensive overview of the phase engineering and applications of two-dimensional transition metal dichalcogenides (2D-TMDs) in electronics. Edited by Chi Sin Tang, Xinmao Yin, and Andrew T. S. Wee, it explores the unique properties of 2D-TMDs, including their optical, electronic, mechanical, and magnetic characteristics. The text covers the synthesis, phase engineering, and electronic properties of these materials, as well as their applications in areas such as transistors and nanoscale charge channels. It serves as a valuable reference for physicists, chemists, engineers, and technologists interested in the rapid scientific and technological advancements in polymorphic 2D-TMDs, aiming to motivate further research and development in this field.
• Titolo autorizzato: Two-Dimensional Transition-Metal Dichalcogenides
• ISBN: 9783527838752; 3527838759; 9783527838745; 3527838740
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9911020160703321
• Lo trovi qui: Univ. Federico II