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Titolo: | Amorphous oxide semiconductors : IGZO and related materials for display and memory / / Hideo Hosono and Hideya Kumomi, editors |
Pubblicazione: | Hoboken, NJ : , : John Wiley & Sons, Inc., , [2022] |
©2022 | |
Descrizione fisica: | 1 online resource (643 pages) |
Disciplina: | 537.622 |
Soggetto topico: | Indium gallium zinc oxide |
Thin film transistors | |
Amorphous semiconductors | |
Persona (resp. second.): | HosonoHideo |
KumomiHideya | |
Nota di bibliografia: | Includes bibliographical references and index. |
Sommario/riassunto: | Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects. In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide. TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: Materials and Device Applications will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices"-- |
Titolo autorizzato: | Amorphous oxide semiconductors |
ISBN: | 1-119-71561-X |
1-119-71564-4 | |
1-119-71565-2 | |
Formato: | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione: | Inglese |
Record Nr.: | 9910831087203321 |
Lo trovi qui: | Univ. Federico II |
Opac: | Controlla la disponibilità qui |