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Titolo: | Formation of bonds to C, Si, Ge, Sn, Pb . Part 1 [[electronic resource] /] / founding editor, J.J. Zuckerman; editor, A.P. Hagen |
Pubblicazione: | New York, N.Y., : VCH Publishers, 1991 |
Descrizione fisica: | 1 online resource (633 p.) |
Disciplina: | 541.3/9 |
541.39 | |
Soggetto topico: | Chemical kinetics - Effect of temperature on |
Inorganic compounds - Synthesis | |
Altri autori: | ZuckermanJ. J <1936-1987.> (Jerold J.) HagenA. P |
Note generali: | Description based upon print version of record. |
Nota di bibliografia: | Includes bibliographical references and indexes. |
Nota di contenuto: | Inorganic Reactions and Methods; Contents; How to use this book; Preface to the Series; Editorial Consultants to the Series; Contributors to Volume 9; Formation of the Bonds to the Group-IVB (C, Si, Ge, Sn, Pb) Elements; Introduction; Formation of the Group-IVB (C, Si, Ge, Sn, Pb)-Group-IVB (C, Si, Ge, Sn, Pb) Element Bond; Introduction; Formation of the Carbon-Carbon Bond; Formation of the Si-Si Bond; in Elemental Silicon; from Oxides.; by Other Methods.; Formation of High-Purity Silicon; Electrochemical Formation of Compounds with Si-Si Bonds (Including Elemental Silicon) |
from Metal Silicidesby Solvolysis in Aqueous or Liquid Ammonia Solutions.; Formation of Oligosilanes; Formation of Polymeric Compounds; from Silicon Hydrides and Organosilicon Hydrides; by the Action of a Silent Electric Discharge.; by Direct Photolysis.; by Sensitized Photolysis.; by Catalyzed Reactions.; by Reaction with Silylmetallic Compounds.; from Silicon Halides and Organosilicon Halides; by Electrochemical Reduction.; by Halide Elimination with Active Metals.; by Reaction with Silylmetallics.; by Catalyzed Disproportionation.; by Reaction with Organomagnesium Halide Reagents. | |
by the Action of Silent Electric Discharge.by Mercury-Photosensitized Photolyses.; from Bissilylmercury Compounds; by Thermolysis.; by Photolysis.; from Organosilanes and Silicon Halides by Hydrogenolysis.; from Silylenes; by Oligomerization.; by Insertions into Bonds of Silicon to Hydrogen, Oxygen and Silicon.; by Addition to Si = C.; in the Direct Reaction of Methyl Chloride with Silicon-Copper.; Formation of the Germanium-Germanium Bond; in Elemental Germanium; from Oxides.; from Sulfides.; by Other Syntheses.; Formation of High-Purity Germanium.; from Organogermanium Hydrides | |
by Reaction with Diorganomercury Compounds in the Presence of UV Radiation.by Hydrogermolysis Reaction.; by Germanium Hydride Decomposition.; from Ge(lV) Halides and Organogermanium(IV) Halides; by the Action of a Microwave Discharge of Ge(lV) Halides.; by Electrochemical Reduction.; by Halide Elimination with Active Metals.; by Reaction with Germyl-Metal Reagents.; by Reaction with Organometallic Reagents.; from Germanium(lI) Halides; by Reactions with Germyl-Metal Reagents.; by Reaction with Organometallic Reagents.; from Germyl Compounds of Cadmium, Mercury, Thallium, Antimony and Bismuth | |
by Thermolysis or Photolysis.from Germylenes; by Oligomerization of Germylenes.; by Insertions into Bonds of Germanium to Hydrogen, Halogen, Carbon, Oxygen, Sulfur, Nitrogen, Phosphorus and Germanium.; The Formation of the Tin-Tin Bond; in Elemental Tin; from Oxides.; from Sulfides.; by Other Syntheses.; Allotropy of Tin; from Organotin Hydrides; by Catalytic Hydrogen Elimination.; by Reaction with Organotin Halogen, Pseudohalogen, Chalcogen and Pnictogen Compounds.; by Reaction with Organometallic Compounds.; by Reaction with Reducible Organic Compounds.; from Organotin Halides | |
by Electrochemical Reduction. | |
Sommario/riassunto: | For the first time the discipline of modern inorganic chemistry has been systematized according to a plan constructed by a council of editorial advisors and consultants, among them three Nobel laureates (E.O. Fischer, H. Taube and G. Wilkinson).Rather than producing a collection of unrelated review articles, the series creates a framework which reflects the creative potential of this scientific discipline. Thus, it stimulates future development by identifying areas which are fruitful for further research. The work is indexed in a unique way by a structured system which maximize |
Titolo autorizzato: | Formation of bonds to C, Si, Ge, Sn, Pb |
ISBN: | 1-282-30813-0 |
9786612308130 | |
0-470-14523-4 | |
0-470-14544-7 | |
Formato: | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione: | Inglese |
Record Nr.: | 9910830155803321 |
Lo trovi qui: | Univ. Federico II |
Opac: | Controlla la disponibilità qui |