Vai al contenuto principale della pagina
Titolo: | CMOS nanoelectronics : innovative devices, architectures, and applications / / edited by Nadine Collaert |
Pubblicazione: | Singapore : , : Pan Stanford Pub., , 2013 |
Descrizione fisica: | 1 online resource (444 p.) |
Disciplina: | 621.3815 |
Soggetto topico: | Molecular electronics |
Nanotechnology | |
Altri autori: | CollaertNadine |
Note generali: | Description based upon print version of record. |
Nota di bibliografia: | Includes bibliographical references. |
Nota di contenuto: | Front Cover; Contents; Preface; I. Integration of Multi-Gate Devices (FinFET); 1. Introduction to Multi-Gate Devices and Integration Challenges; 2. Dry Etching Patterning Requirements for Multi-Gate Devices; 3. High-k Dielectrics and Metal Gate Electrodes on SOI MuGFETs; 4. Doping, Contact and Strain Architectures for Highly Scaled FinFETs; II. Circuit-Related Aspects; 5. Variability and Its Implications for FinFET SRAM; 6. Specific Features of MuGFETs at High Temperatures over a Wide Frequency Range; 7. ESD Protection in FinFET Technology; III. Exploratory Devices and Characterization Tools |
8. The Junctionless Nanowire Transistor9. The Variational Principle: A Valuable Ally Assisting the Self-Consistent Solution of Poisson's Equation and Semi-Classical Transport Equations; 10. New Tools for the Direct Characterisation of FinFETS; 11. Dopant Metrology in Advanced FinFETs | |
Sommario/riassunto: | This book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as high-density fin patterning, gate stack design, and source/drain engineering, which have been considered challenges for the integration of FinFETs. The book also addresses circuit-related aspects, including the impact of variability on SRAM design, ESD design, and high-T operation. It discusses a new d |
Titolo autorizzato: | CMOS nanoelectronics |
ISBN: | 0-429-11283-1 |
981-4364-03-7 | |
Formato: | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione: | Inglese |
Record Nr.: | 9910818774003321 |
Lo trovi qui: | Univ. Federico II |
Opac: | Controlla la disponibilità qui |