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Ferroelectric Thin Films [[electronic resource] ] : Basic Properties and Device Physics for Memory Applications / / edited by Masanori Okuyama, Yoshihiro Ishibashi



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Titolo: Ferroelectric Thin Films [[electronic resource] ] : Basic Properties and Device Physics for Memory Applications / / edited by Masanori Okuyama, Yoshihiro Ishibashi Visualizza cluster
Pubblicazione: Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2005
Edizione: 1st ed. 2005.
Descrizione fisica: 1 online resource (XIII, 244 p.)
Disciplina: 538
Soggetto topico: Magnetism
Magnetic materials
Crystallography
Electronics
Microelectronics
Metals
Engineering
Magnetism, Magnetic Materials
Crystallography and Scattering Methods
Electronics and Microelectronics, Instrumentation
Metallic Materials
Engineering, general
Persona (resp. second.): OkuyamaMasanori
IshibashiYoshihiro
Note generali: Bibliographic Level Mode of Issuance: Monograph
Nota di contenuto: Theoretical Aspects of Phase Transitions in Ferroelectric Thin Films -- Chemical Solution Deposition of Layered-Structured Ferroelectric Thin Films -- PB-Based Ferroelectric Thin Films Prepared by MOCVD -- Spontaneous Polarization and Crystal Orientation Control of MOCVD PZT and Bi4Ti3O12-Based Films -- Rhombohedral PZT Thin Films Prepared by Sputtering -- Scanning Nonlinear Dielectric Microscope -- Analysis of Ferroelectricity and Enhanced Piezoelectricity near Morphotropic Phase Boundary -- Correlation between Domain Structures in Dielectric Properties in Single Crystals of Ferroelectric Solid Solutions -- Relaxor Behaviors in Perovskite-Type Dielectric Compounds -- Artificial Control of Ordered/Disordered State of B-Site Ions in Ba(Zr,Ti)O3 by a Superlattice Technique -- Physics of Ferroelectric Interface: An Attempt to Nano-Ferrolectric Physics -- Preparation and Property of Ferroelectic-Insulator-Semiconductor Junction Using YMNO3 Thin Film -- Improvement of Memory Retention in Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Structure.
Sommario/riassunto: Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.
Titolo autorizzato: Ferroelectric Thin Films  Visualizza cluster
ISBN: 1-281-39020-8
9786611390204
3-540-31479-2
Formato: Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione: Inglese
Record Nr.: 9910634037903321
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Serie: Topics in Applied Physics, . 0303-4216 ; ; 98