IEEE Number 256-1963 : IEEE Test Procedure for Semiconductor Diodes / / IEEE
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| Titolo: |
IEEE Number 256-1963 : IEEE Test Procedure for Semiconductor Diodes / / IEEE
|
| Pubblicazione: | Piscataway, NJ : , : IEEE, , 1963 |
| Descrizione fisica: | 1 online resource (10 pages) |
| Disciplina: | 621.3815 |
| Soggetto topico: | Diodes, Semiconductor |
| Semiconductors - Testing | |
| Standards, Engineering | |
| Sommario/riassunto: | This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes, For the purpose of this Standard, a semiconductor diode is defined as: "A semiconductor device having two terminals and exhibiting a nonlinear voltage-current characteristic ; in more restricted usage, a semiconductor device which has the asymmetrical voltage-current characteristic exemplified by a single p-n junction." Methods of test are described for static, small-signal and pulse parameters. Many of the terms considered herein have been set down in AIEE and IRE Standards, particularly in 60 IRE 28.S1 and AIEE No. 425. |
| Altri titoli varianti: | IEEE No 256-1963 |
| Titolo autorizzato: | IEEE Number 256-1963 |
| ISBN: | 1-5044-0227-8 |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910137507703321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |