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| Titolo: |
Amorphous oxide semiconductors : IGZO and related materials for display and memory / / Hideo Hosono and Hideya Kumomi, editors
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| Pubblicazione: | Hoboken, NJ : , : John Wiley & Sons, Inc., , [2022] |
| ©2022 | |
| Descrizione fisica: | 1 online resource (643 pages) |
| Disciplina: | 537.622 |
| Soggetto topico: | Indium gallium zinc oxide |
| Thin film transistors | |
| Amorphous semiconductors | |
| Persona (resp. second.): | HosonoHideo |
| KumomiHideya | |
| Nota di bibliografia: | Includes bibliographical references and index. |
| Sommario/riassunto: | Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects. In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide. TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: Materials and Device Applications will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices"-- |
| Titolo autorizzato: | Amorphous oxide semiconductors ![]() |
| ISBN: | 1-119-71561-X |
| 1-119-71564-4 | |
| 1-119-71565-2 | |
| Formato: | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910831087203321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |