Defects in Organic Semiconductors and Devices

• Autore: Nguyen Thien-Phap
• Pubblicazione: Newark : , : John Wiley & Sons, Incorporated, , 2023; ©2023
• Descrizione fisica: 1 online resource (279 pages)
• Nota di contenuto: Cover -- Title Page -- Copyright Page -- Contents -- Abbreviations -- Introduction -- Chapter 1. Overview of Organic Semiconductors -- 1.1. Organic semiconductors -- 1.2. Doping of organic semiconductors -- 1.3. Organic electronic devices -- 1.3.1. Architectures of organic devices -- 1.3.2. Organic light-emitting diodes (OLEDs) -- 1.3.3. Organic solar cells (OSCs or OPVs) -- 1.3.4. Organic field-effect transistors (OFETs) -- Chapter 2. Defects in Materials -- 2.1. Order and disorder -- 2.2. Crystalline semiconductors -- 2.2.1. Localized states -- 2.2.2. Density of states (DOS) -- 2.3. Amorphous semiconductors -- 2.3.1. Localized states -- 2.3.2. Density of states (DOS) -- 2.4. Organic semiconductors -- 2.4.1. Polymer structure -- 2.4.2. Polymer crystallinity -- 2.4.3. Defects in conjugated polymers -- 2.4.4. Defects in small-molecule crystals -- 2.4.5. Localized states -- 2.4.6. Density of states -- 2.5. Distribution of the energetic states -- Chapter 3. Defects and Physical Properties of Semiconductors -- 3.1. Carrier transport in organic semiconductors -- 3.1.1. Hopping conduction -- 3.1.2. Uniform density of states model -- 3.1.3. Non-uniform density of states models -- 3.2. Effects of defects on the carrier transport -- 3.2.1. Traps and recombination centers -- 3.2.2. Trapping mechanisms and trap parameters -- 3.3. Optical properties of semiconductors and defects -- 3.3.1. Defects and absorption -- 3.3.2. Defects and luminescence -- Chapter 4. Techniques for Studying Defects in Semiconductors -- 4.1. Electron spin resonance (ESR) -- 4.1.1. Basic concepts of ESR -- 4.1.2. Interpretation of ESR line -- 4.1.3. Electron nuclear double resonance (ENDOR) -- 4.1.4. Investigation of defects using the ESR technique -- 4.2. Optical techniques -- 4.2.1. Fluorescence spectroscopy (FL) -- 4.2.2. Thermally stimulated luminescence (TSL) spectroscopy. ; 4.3. Electrical techniques -- 4.3.1. Thermally stimulated current (TSC) technique -- 4.3.2. Current-voltage measurements: space charge-limited current (SCLC) -- 4.3.3. Impedance spectroscopy (IS) -- 4.3.4. Deep-level transient spectroscopy (DLTS) -- 4.3.5. Time of flight (TOF) and charge carrier extraction by linearly increasing voltage (CELIV) techniques -- Chapter 5. Defect Origins -- 5.1. Defects in organic semiconductors -- 5.1.1. Structural defects -- 5.1.2. Impurity defects -- 5.2. Defects in organic devices -- 5.2.1. Defects from the semiconductor -- 5.2.2. Defects from the surface and the interface -- 5.2.3. Defects from diffused impurities -- Chapter 6. Defects, Performance and Reliability of Organic Devices -- 6.1. Impact of defects on the performance of organic devices -- 6.1.1. Defects and efficiency of OLEDs -- 6.1.2. Defects and efficiency of OPVs -- 6.1.3. Defects and performance of OFETs -- 6.2. Impact of defects on the stability of organic devices -- 6.2.1. Overview of degradation mechanisms in organic semiconductors and devices -- 6.2.2. Defects and degradation of organic semiconductor and devices -- Future Prospects -- References -- Index -- EULA.
• Titolo autorizzato: Defects in Organic Semiconductors and Devices
• ISBN: 1-394-22945-3; 1-394-22943-7
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910830036703321
• Lo trovi qui: Univ. Federico II