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Functional nanomaterials and devices VII : selected, peer reviewed papers from the 7th International Workshop on Functional Nanomaterials and Devices, April 8-11, 2013, Kyiv, Ukraine / / edited by Alexei N. Nazarov, Volodymyr S. Lysenko and Denis Flandre



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Titolo: Functional nanomaterials and devices VII : selected, peer reviewed papers from the 7th International Workshop on Functional Nanomaterials and Devices, April 8-11, 2013, Kyiv, Ukraine / / edited by Alexei N. Nazarov, Volodymyr S. Lysenko and Denis Flandre Visualizza cluster
Pubblicazione: Durntech-Zurich, Switzerland : , : Trans Tech Publications, , [2014]
©2014
Descrizione fisica: 1 online resource (161 p.)
Disciplina: 620.115
Soggetto topico: Nanostructured materials
Nanotechnology
Altri autori: NazarovA. N (Alexei N.)  
LysenkoVolodymyr S  
FlandreDenis  
Note generali: Description based upon print version of record.
Nota di bibliografia: Includes bibliographical references and indexes.
Nota di contenuto: Functional Nanomaterials and Devices VII; Preface, Committees and Sponsors; Table of Contents; Chapter 1: Nanoscale SOI Structures, Devices and Sensors; An Experimental Study of Properties of Ultrathin Si Layer with Bonded Si/SiO2 Interface; Transport and Photoelectric Effects in Structures with Ge and SiGe Nanoclusters Grown on Oxidized Si (001); Effect of Ge-Nanoislands on the Low-Frequency Noise in Si/SiOx/Ge Structures; Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films
On the Mobility Behavior in Highly Doped Junctionless Nanowire SOI MOSFETsHigh Sensitive Active MOS Photo Detector on the Local 3D SOI-Structure; Properties of Low-Dimentional Polysilicon in SOI Structures for Low Temperature Sensors; Chapter 2: New Functional Nanomaterials, Nanoscaled Devices for Electronics, Energy Harvesting, Light Emission, and Lighting; Carbon-Rich Nanostructurated a-SiC on Si Heterostructures for Field-Effect Electron Emission
Characteristics of Hydrogen Effusion from the Si-H Bonds in Si Rich Silicon Oxynitride Films for Nanocrystalline Silicon Based Photovoltaic ApplicationsHybrid Solar Cells Based on CdS Nanowire Arrays; Formation of Ordered Si Nanowires Arrays on Si Substrate; Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates; Chapter 3: Diagnostics of the Functional Nanomaterials and Devices; Magnetic Resonance and Optical Study of Carbonized Silica Obtained by Pyrolysis of Surface Compounds
Electrical Properties of Composite Films with Silicon Nanocrystals in the Insulating MatrixPositron Annihilation Lifetime Spectroscopy Measurement of Ge5As37S58 Glass; Comparative Investigation of Structural and Optical Properties of Si-Rich Oxide Films Fabricated by Magnetron Sputtering; Charge Trapping in Hafnium Silicate Films with Modulated Composition and Enhanced Permittivity; Low Dislocation Density and High Mobility GaN Layers for DHFET Channels Grown on High-Temperature AlN/AlGaN Buffer Layer by Ammonia MBE
Peculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in SiliconChapter 4: Functional Nanomaterials for Medicine; Nanoparticles in Antivirus Therapy; Application of Oxidized Silicon Nanowires for Nerve Fibers Regeneration; Keywords Index; Authors Index
Sommario/riassunto: The volume contains some of the most recent knowledge on Functional Nanomaterials and Devices. The papers are grouped into: 1. semiconductor-on-insulator structures, devices and sensors; 2. physics of new functional nanodevices and sensors; 3. diagnostics methods of nanomaterials and devices; 4. functional nanomaterials in medicine. The first part considers transport phenomena in thin silicon layer near back SiO2-Si interface of the SOI structures fabricated with DELICATE technology, mobility increase in high doped nanowire junctionless multigate MOSFETs; photoconductance and LF noises in the
Titolo autorizzato: Functional nanomaterials and devices VII  Visualizza cluster
ISBN: 3-03826-323-0
Formato: Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione: Inglese
Record Nr.: 9910813132103321
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Serie: Advanced mterials research ; ; v.854.