Vai al contenuto principale della pagina
| Titolo: |
High mobility materials for CMOS applications / / edited by Nadine Collaert
|
| Pubblicazione: | Cambridge, Massachusetts : , : Elsevier, , [2018] |
| ©2018 | |
| Descrizione fisica: | 1 online resource (390 pages) |
| Disciplina: | 621.395 |
| Soggetto topico: | Metal oxide semiconductors, Complementary |
| Persona (resp. second.): | CollaertNadine |
| Nota di bibliografia: | Includes bibliographical references and index. |
| Nota di contenuto: | CMOS and Beyond CMOS : Scaling Challenges / Kelin Kuhn -- Opportunities and Challenges of Multiscale Heterogeneous Material Integration on Si Platforms for Enhanced Functionality and Performance / Aaron V.-Y. Thean -- Monolithic Integration of InGaAs on Si(001) Substrate for Logic Devices / Clement Merckling -- II-N Epitaxy on Si for Power Electronics / M. Charles, Y. Baines, E. Morvan and A. Torres -- Impact of Defects on the Performance of High-Mobility Semiconductor Devices / Eddy Simoen -- SiGe Devices / Pouya Hashemi and Takashi Ando -- III-V Devices and Technology for CMOS / Niamh Waldron -- Beyond CMOS : Steep-Slope Devices and Energy Efficient Nanoelectronics / Adrian Ionescu -- Optoelectronic Devices Integrated on Silicon / Bert Jan Offrein, Herwig Hahn and Marc Seifried -- Circuits / V. Deshpande, J. Fompeyrine and L. Czornomaz. |
| Titolo autorizzato: | High mobility materials for CMOS applications ![]() |
| ISBN: | 0-08-102062-7 |
| 0-08-102061-9 | |
| Formato: | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910583487403321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |