Breakdown phenomena in semiconductors and semiconductor devices [[electronic resource] /] / Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein

• Autore: Levinshteĭn M. E (Mikhail Efimovich)
• Pubblicazione: New Jersey ; ; London, : World Scientific, c2005
• Descrizione fisica: 1 online resource (223 p.)
• Disciplina: 621.38152
• Soggetto topico: Semiconductors; Breakdown (Electricity); High voltages
• Altri autori: KostamovaaraJuha VainshteinSergey
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and indexes.
• Nota di contenuto: Preface; Contents; Chapter 1 Introductory Chapter; Chapter 2 Avalanche Multiplication; Chapter 3 Static Avalanche Breakdown; Chapter 4 Avalanche Injection; Chapter 5 Dynamic Breakdown; Conclusion; List of Symbols; Bibliography; Index; AUTHOR INDEX
• Sommario/riassunto: Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi
• Titolo autorizzato: Breakdown phenomena in semiconductors and semiconductor devices
• ISBN: 1-281-37292-7; 9786611372927; 981-270-333-0
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910783926603321
• Lo trovi qui: Univ. Federico II
• Serie: Selected topics in electronics and systems ; ; v. 36.