Stanford R. Ovshinsky [[electronic resource] ] : the science and technology of an American genius / / [edited by] Hellmut Fritzsche, Brian Schwartz

• Autore: Ovshinsky Stanford R
• Pubblicazione: Singapore ; ; New Jersey, : World Scientific, c2008
• Descrizione fisica: 1 online resource (396 p.)
• Disciplina: 537.622
• Soggetto topico: Amorphous semiconductors; Solar energy; Photovoltaic power generation; Hydrogen as fuel
• Soggetto genere / forma: Electronic books.
• Altri autori: FritzscheHellmut SchwartzBrian B. <1938->
• Note generali: "Presented to Standford R. Ovshinsky on the occasion of his 85th birthday, November 24, 2007"--P. [v].
• Nota di bibliografia: Include bibliographical references.
• Nota di contenuto: CONTENTS; CHAPTER I: Stan Ovshinsky; CHAPTER II: New Science; Fundamentals of Amorphous Materials, Stanford R. Ovshinsky, Physical Properties of Amorphous Materials, D. Adler, B.B. Schwartz and M.C. Steele eds. Plenum Press, (1985) pp 105-155.; I. INTRODUCTION; II. CHEMICAL CONSIDERATIONS; III. THERMODYNAMIC CONSIDERATIONS; IV. CHEMISTRY AS A DESIGN TOOL; V. MECHANICAL PROPERTIES; VI. PHDNONS; VII. MATERIALS SYNTHESIS FOR DEVICE APPLICATIONS; VIII. CHEMICAL MODIFICATION; IX. CONCLUSION; REFERENCES ; Amorphous Materials, Past, Present and Future, S.R. Ovshinsky, J. Non-Crystalline Solids, 73 (1985) pp 395-408.References; Amorphous and Disordered Materials - The Basis of New Industries, S. R. Ovshinsky, Mat. Res. Soc. Symp. Proc., 554 (1999) pp 399-412.; ABSTRACT; INTRODUCTION; ENERGY GENERATION -PHOTO VOL TAleS; ENERGY STORAGE - NICKEL METAL HYDRIDE BATTERIES; INFORMATION; CONCLUSION; ACKNOWLEDGEMENTS; REFERENCES; Selected Publications; CHAPTER III: Phase Change Memory ; Optically Induced Phase Changes in Amorphous Materials, S.R. Ovshinsky, J. Non-Crystalline Solids, 141 (1992) pp 200-203.1. Introduction; 2. Phase change technology; 3. High speed materials; References; The Relationship Between Crystal Structure and Performance as Optical Recording Media in Te-Ge-Sb Thin Films, D. Strand, J. Gonzalez-Hernandez, B.S. Chao, S.R. Ovshinsky, P. Gasiorowski and D.A. Pawlik, Mat. Res. Soc. Symp. Proc., 230 (1992) pp 251-256; ABSTRACT; INTRODUCTION; EXPERIMENTAL; RESULTS; DISCUSSION AND CONCLUSION; REFERENCE ; Ovonic Phase Change Memory Making Possible New Optical and Electrical Devices, S.R. Ovshinsky, 9th Symposium on Phase Change Recording, Japan, (1997) pp 44-49.Acknowledgements; References; Phase-Change Optical Storage Media, Takeo Ohta and S.R. Ovshinsky, Photo-Induced Metastability in Amorphous Semiconductors, Ed. AV. Kolobov, Wiley-VCH (2003) pp 310-326,; 18.1 Introduction; 18.2 Phase-Change Overwrite Optical Disk; 18.2.1 Pbase-Cbange Optical Memory Pbenomena; 18.2.2 The Phase-Change Memory Mechanism; 18.2.3 Phase-Change Overwriting Method; 18.3 Phase-Change Materials ; 18.3.1 Bonding Features of Chalcogenide Phase-Change Materials18.3.2 Phase-Change Optical Disk Materials for Optical Disk Memory; 18.4 Breakthrough Technologies of the Phase~Change Optical Disk Media; 18.4.1 Basic Layer Structure; 18.4.2 Million Overwrite Cycle Phase Change Optical Disk [6]; 18.5 Thin Substrate Technology of Phase Change Optical Disk Promotes DVD; 18.6 High-Density Recording Technologies for Phase Change Optical Disks; 18.6.1 Short-Wavelength Blue Laser and High Numerical Aperture Lens Recording; 18.6.2 Dual-Layer Recording; 18.6.3 Multi-Level Recording ; 18.6.4 Near-Field Recording and Super-RENS Recording
• Sommario/riassunto: This book highlights the achievements of the self-taught inventor, scientist, manufacturer and entrepreneur, Stanford R Ovshinsky. This remarkable individual could, without special training, compete with the well-funded establishments of learning and industry in the second half of the last century and leave us an incredible legacy of brilliant innovations with a lasting impact on our lives. His achievements extend over amazingly diverse fields and have or are prone to create new industries of great societal value.The phase change memories of commonly used rewritable CDs and DVDs as well as of
• Titolo autorizzato: Stanford R. Ovshinsky
• ISBN: 981-281-841-3
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910454781103321
• Lo trovi qui: Univ. Federico II