ISTFA 2012 [[electronic resource] ] : conference proceedings from the 38th International Symposium for Testing and Failure Analysis : November 11-15, 2012, Phoenix Convention Center, Phoenix, Arizona, USA

• Pubblicazione: Materials Park, Ohio, : ASM International, 2012
• Descrizione fisica: 1 online resource (642 p.)
• Soggetto topico: Electronics - Materials - Testing; Electronic apparatus and appliances - Testing
• Soggetto genere / forma: Electronic books.
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: ""Title Page""; ""Copyright""; ""Board of Directors""; ""Organizing Committee""; ""Symposium Committee""; ""User Groups""; ""Contents""; ""2012 IPFA Best Paper""; ""Laser Voltage Probing in Failure Analysis of Advanced Integrated Circuits on SOI""; ""Emerging Concepts and Techniques""; ""Closer to the Theoretical Limit: Spherical Corrections to Aplanatic Solid Immersion Imaging with Adaptive Optics""; ""Fault Isolation of Open Defects Using Space Domain Reflectometry""; ""Localization of Dead Open in a Solder Bump by Space Domain Reflectometry"" ; ""Advanced Fault Isolation Technique Using Electro-Optical Terahertz Pulse Reflectometry (EOTPR) for 2D and 2.5D Flip-Chip Package""""Novel Plasma FIB/SEM for High Speed Failure Analysis and Real Time Imaging of Large Volume Removal""; ""FemtoFarad/TeraOhm Endpoint Detection for Microsurgery of Integrated Circuit Devices""; ""Fault Isolation and Failure Analysis of TSV""; ""Cross Section Analysis of Cu Filled TSVs Based On High Throughput Plasma- FIB Milling""; ""Microstructural Considerations on the Reliability of 3D Packaging"" ; ""High-Frequency TSV Failure Detection Method with Z Parameter""""Enhanced Failure Analysis on Open TSV Interconnects""; ""Nanoprobing Techniques""; ""A New Technique for Non-Invasive Short-Localisation in Thin Dielectric Layers by Electron Beam Absorbed Current (EBAC) Imaging""; ""Precise Localization of 28 nm via Chain Resistive Defect Using EBAC and Nanoprobing""; ""In FAB 300 mm Wafer Level Atomic Force Probe Characterization""; ""Nanoelectronic Analog Circuit PFA â€? The Return of Circuit Level Probing""; ""Fault Isolation and Failure Analysis of 3D Packages"" ; ""Enhanced Comparison of Lock-in Thermography and Magnetic Microscopy for 3D Defect Localization of System in Packages""""Non Destructive Failure Analysis of 3D Electronic Packages Using Both Electro Optical Terahertz Pulse Reflectometry and 3D X-ray Computed Tomography""; ""Failure Analysis Using Scanning Acoustic Microscopy for Diagnostics of Electronic Devices and 3D System Integration Technologies""; ""Nanoprobing Applications""; ""Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90 nm Node CMOS Technology"" ; ""Study of Static Noise Margin, Cell Stability and Influence of Electron Beam on Sub-30 nm SRAM Using SEM-Based Nanoprobing with 8 Nanoprobes""""Leaky Device Channel Anomaly Identification and Case Study by Nano-Probing Technique, Curve Fitting, and Model Analysis""; ""Photon Based Techniques: An Understanding""; ""Photon Emission Spectra of FETs as Obtained by InGaAs Detector""; ""Near-Infrared Photon Emission Spectroscopy Trends in Scaled SOI Technologies"" ; ""Characterization and TCAD Simulation of 90 nm Technology PMOS Transistor Under Continuous Photoelectric Laser Stimulation for Failure Analysis Improvement""
• Titolo autorizzato: ISTFA 2012
• ISBN: 1-68015-512-1; 1-61503-995-3
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910452751103321
• Lo trovi qui: Univ. Federico II